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    • 2. 发明授权
    • Apparatus for cleaning semiconductor wafer and method for cleaning wafer using the same
    • 用于清洁半导体晶片的设备及使用其清洁晶片的方法
    • US06712078B2
    • 2004-03-30
    • US09899226
    • 2001-07-06
    • Im-soo ParkKun-tack LeeYong-pil HanSang-rok Hah
    • Im-soo ParkKun-tack LeeYong-pil HanSang-rok Hah
    • B08B704
    • H01L21/67115B08B3/04B08B7/0071H01L21/67051Y10S134/902
    • An apparatus for cleaning a semiconductor wafer and method for cleaning a wafer using the same wherein, the apparatus includes a chamber on which a wafer is mounted, a revolving chuck mounted in the chamber for supporting and fixing the wafer, a nozzle for spraying cleaning solution onto the wafer, a cover for covering an upper part of the chamber, a heating lamp fixed on an upper part of the cover for heating the wafer or the cleaning solution, a cooling water conduit surrounding the cover, and an antipollution plate mounted on a lower part of the heating lamp in the cover for preventing the heating lamp from being polluted by the cleaning solution. According to an embodiment of the present invention, the cleaning solution, preferably of ozone water, hydrogen water, or electrolytic-ionized water, is heated for a short time and used to clean the wafer.
    • 一种用于清洁半导体晶片的装置及其清洗方法,其特征在于,所述装置包括:安装有晶片的腔室;安装在所述腔室中的用于支撑和固定晶片的旋转卡盘;用于喷射清洗液的喷嘴 在所述晶片上,覆盖所述室的上部的盖,固定在所述盖的上部用于加热所述晶片或所述清洁溶液的加热灯,围绕所述盖的冷却水导管和安装在所述盖上的防污染板 罩中的加热灯的下部,以防止加热灯被清洁溶液污染。 根据本发明的一个实施方案,优选将臭氧水,氢水或电解电离水的清洁溶液加热很短时间并用于清洁晶片。
    • 5. 发明授权
    • Method of removing oxide layer and semiconductor manufacturing apparatus for removing oxide layer
    • 去除氧化物层的方法和用于去除氧化物层的半导体制造装置
    • US07488688B2
    • 2009-02-10
    • US10997902
    • 2004-11-29
    • Seung-pil ChungKyu-whan ChangSun-jung LeeKun-tack LeeIm-soo ParkKwang-wook LeeMoon-hee Lee
    • Seung-pil ChungKyu-whan ChangSun-jung LeeKun-tack LeeIm-soo ParkKwang-wook LeeMoon-hee Lee
    • H01L21/302
    • H01L21/02057H01L21/31116
    • A method for removing an oxide layer such as a natural oxide layer and a semiconductor manufacturing apparatus which uses the method to remove the oxide layer. A vertically movable susceptor is installed at the lower portion in a processing chamber and a silicon wafer is loaded onto the susceptor when it is at the lower portion of the processing chamber. The air is exhausted from the processing chamber to form a vacuum condition therein. A hydrogen gas in a plasma state and a fluorine-containing gas are supplied into the processing chamber to induce a chemical reaction with the oxide layer on the silicon wafer, resulting in a reaction layer. Then, the susceptor is moved up to the upper portion of the processing chamber, to anneal the silicon wafer on the susceptor with a heater installed at the upper portion of the processing chamber, thus vaporizing the reaction layer. The vaporized reaction layer is exhausted out of the chamber. The oxide layer can be removed with a high selectivity while avoiding damage or contamination of the underlying layer.
    • 用于除去氧化物层的方法,例如天然氧化物层和使用该方法去除氧化物层的半导体制造装置。 垂直移动的基座安装在处理室的下部处,并且当硅晶片位于处理室的下部时,将硅晶片装载到基座上。 空气从处理室排出,在其中形成真空条件。 将等离子体状态的氢气和含氟气体供给到处理室,以引起与硅晶片上的氧化物层的化学反应,产生反应层。 然后,将基座向上移动到处理室的上部,通过安装在处理室上部的加热器对基座上的硅晶片退火,从而使反应层蒸发。 蒸发的反应层被排出室外。 可以以高选择性去除氧化物层,同时避免下层的损坏或污染。