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1. 发明授权

US07237561B2 Apparatus for cleaning semiconductor wafer including heating using a light source and method for cleaning wafer using the same 失效
标题翻译：使用光源进行加热的半导体晶片的清洗装置及使用其进行清洗的方法
公开(公告)号：US07237561B2
公开(公告)日：2007-07-03
申请号：US10685515
申请日：2003-10-16
申请人： Im-soo Park , Kun-tack Lee , Yong-pil Han , Sang-rok Hah
发明人： Im-soo Park , Kun-tack Lee , Yong-pil Han , Sang-rok Hah
IPC分类号： B08B7/04
CPC分类号： H01L21/67115 , B08B3/04 , B08B7/0071 , H01L21/67051 , Y10S134/902
摘要： An apparatus for cleaning a semiconductor wafer and method for cleaning a wafer using the same wherein, the apparatus includes a chamber on which a wafer is mounted, a revolving chuck mounted in the chamber for supporting and fixing the wafer, a nozzle for spraying cleaning solution onto the wafer, a cover for covering an upper part of the chamber, and a light source. The cleaning solution, preferably one of ozone water, hydrogen water, or electrolytic-ionized water, may be heated for a short time and used to clean the wafer.
摘要翻译：一种用于清洁半导体晶片的装置及其清洗方法，其特征在于，所述装置包括：安装有晶片的腔室;安装在所述腔室中的用于支撑和固定晶片的旋转卡盘;用于喷射清洗液的喷嘴在晶片上，用于覆盖室的上部的盖和光源。清洁溶液，优选臭氧水，氢水或电解电离水中的一种可以被加热很短时间并用于清洁晶片。

2. 发明授权

US06712078B2 Apparatus for cleaning semiconductor wafer and method for cleaning wafer using the same 失效
标题翻译：用于清洁半导体晶片的设备及使用其清洁晶片的方法
公开(公告)号：US06712078B2
公开(公告)日：2004-03-30
申请号：US09899226
申请日：2001-07-06
申请人： Im-soo Park , Kun-tack Lee , Yong-pil Han , Sang-rok Hah
发明人： Im-soo Park , Kun-tack Lee , Yong-pil Han , Sang-rok Hah
IPC分类号： B08B704
CPC分类号： H01L21/67115 , B08B3/04 , B08B7/0071 , H01L21/67051 , Y10S134/902
摘要： An apparatus for cleaning a semiconductor wafer and method for cleaning a wafer using the same wherein, the apparatus includes a chamber on which a wafer is mounted, a revolving chuck mounted in the chamber for supporting and fixing the wafer, a nozzle for spraying cleaning solution onto the wafer, a cover for covering an upper part of the chamber, a heating lamp fixed on an upper part of the cover for heating the wafer or the cleaning solution, a cooling water conduit surrounding the cover, and an antipollution plate mounted on a lower part of the heating lamp in the cover for preventing the heating lamp from being polluted by the cleaning solution. According to an embodiment of the present invention, the cleaning solution, preferably of ozone water, hydrogen water, or electrolytic-ionized water, is heated for a short time and used to clean the wafer.
摘要翻译：一种用于清洁半导体晶片的装置及其清洗方法，其特征在于，所述装置包括：安装有晶片的腔室;安装在所述腔室中的用于支撑和固定晶片的旋转卡盘;用于喷射清洗液的喷嘴在所述晶片上，覆盖所述室的上部的盖，固定在所述盖的上部用于加热所述晶片或所述清洁溶液的加热灯，围绕所述盖的冷却水导管和安装在所述盖上的防污染板罩中的加热灯的下部，以防止加热灯被清洁溶液污染。根据本发明的一个实施方案，优选将臭氧水，氢水或电解电离水的清洁溶液加热很短时间并用于清洁晶片。

3. 发明授权

US07135413B2 Cleaning solution for removing damaged portion of ferroelectric layer and cleaning method using the same 失效
公开(公告)号：US07135413B2
公开(公告)日：2006-11-14
申请号：US10727962
申请日：2003-12-04
申请人： Kwang-wook Lee , Im-soo Park , Kun-tack Lee , Young-min Kwon , Sang-rok Hah
发明人： Kwang-wook Lee , Im-soo Park , Kun-tack Lee , Young-min Kwon , Sang-rok Hah
IPC分类号： H01L21/302 , C25F3/30 , C09K13/00
CPC分类号： C04B41/009 , C04B41/5315 , C04B41/91 , C04B2111/00844 , C11D7/02 , C11D7/265 , C11D11/0047 , H01L21/31111 , C04B35/465 , C04B35/491
摘要： A cleaning solution for use in removing a damaged portion of a ferroelectric layer, and a cleaning method using the solution. The cleaning solution includes a fluoride, an organic acid with carboxyl group, an alkaline pH adjusting agent and water.

4. 发明授权

US06565736B2 WET PROCESS FOR SEMICONDUCTOR DEVICE FABRICATION USING ANODE WATER CONTAINING OXIDATIVE SUBSTANCES AND CATHODE WATER CONTAINING REDUCTIVE SUBSTANCES, AND ANODE WATER AND CATHODE WATER USED IN THE WET PROCESS 失效
标题翻译：使用含有氧化物质的阳离子水和含有还原性物质的阴极水的半导体器件制造的湿法工艺，以及在湿法中使用的阳极水和阴极水
公开(公告)号：US06565736B2
公开(公告)日：2003-05-20
申请号：US09945722
申请日：2001-09-05
申请人： Im-soo Park , Kun-tack Lee , Young-min Kwon , Sang-rok Hah , Woo-gwan Shim , Hyung-ho Ko
发明人： Im-soo Park , Kun-tack Lee , Young-min Kwon , Sang-rok Hah , Woo-gwan Shim , Hyung-ho Ko
IPC分类号： C02F1461
CPC分类号： C02F1/4618 , C02F2001/46161 , C02F2201/46115 , C02F2201/46145 , C02F2209/04 , C02F2209/06 , H01L21/0206 , H01L21/02063 , H01L21/02068 , H01L21/02071 , H01L21/02074 , Y02E60/366
摘要： A wet process performed in the manufacture of semiconductor devices with cathode water and anode water produced from electrolyte using a 3-cell electrolyzer having an intermediate cell for the electrolyte. The 3-cell electrolyzer includes an anode cell, a cathode cell, and an intermediate cell between the anode and cathode cells, which are partitioned by ion exchange membranes. Deionized water is supplied into the anode and cathode cells, and the intermediate cell is filled with an electrolytic aqueous solution to perform electrolysis. The anode water containing oxidative substances or the cathode water containing reductive substances, which are produced by the electrolysis process, are used in the wet process.
摘要翻译：在使用具有用于电解质的中间电池的3电池电解器的由电解质产生的阴极水和阳极水的半导体器件的制造中进行的湿法。 3电池电解器包括阳极电池，阴极电池和在阳极和阴极电池之间的由离子交换膜分隔的中间电池。将去离子水供应到阳极和阴极单元中，并且中间单元填充有电解水溶液以进行电解。含有氧化物质的阳极水或含有通过电解方法生产的还原性物质的阴极水在湿法中使用。

5. 发明授权

US07488688B2 Method of removing oxide layer and semiconductor manufacturing apparatus for removing oxide layer 有权
标题翻译：去除氧化物层的方法和用于去除氧化物层的半导体制造装置
公开(公告)号：US07488688B2
公开(公告)日：2009-02-10
申请号：US10997902
申请日：2004-11-29
申请人： Seung-pil Chung , Kyu-whan Chang , Sun-jung Lee , Kun-tack Lee , Im-soo Park , Kwang-wook Lee , Moon-hee Lee
发明人： Seung-pil Chung , Kyu-whan Chang , Sun-jung Lee , Kun-tack Lee , Im-soo Park , Kwang-wook Lee , Moon-hee Lee
IPC分类号： H01L21/302
CPC分类号： H01L21/02057 , H01L21/31116
摘要： A method for removing an oxide layer such as a natural oxide layer and a semiconductor manufacturing apparatus which uses the method to remove the oxide layer. A vertically movable susceptor is installed at the lower portion in a processing chamber and a silicon wafer is loaded onto the susceptor when it is at the lower portion of the processing chamber. The air is exhausted from the processing chamber to form a vacuum condition therein. A hydrogen gas in a plasma state and a fluorine-containing gas are supplied into the processing chamber to induce a chemical reaction with the oxide layer on the silicon wafer, resulting in a reaction layer. Then, the susceptor is moved up to the upper portion of the processing chamber, to anneal the silicon wafer on the susceptor with a heater installed at the upper portion of the processing chamber, thus vaporizing the reaction layer. The vaporized reaction layer is exhausted out of the chamber. The oxide layer can be removed with a high selectivity while avoiding damage or contamination of the underlying layer.
摘要翻译：用于除去氧化物层的方法，例如天然氧化物层和使用该方法去除氧化物层的半导体制造装置。垂直移动的基座安装在处理室的下部处，并且当硅晶片位于处理室的下部时，将硅晶片装载到基座上。空气从处理室排出，在其中形成真空条件。将等离子体状态的氢气和含氟气体供给到处理室，以引起与硅晶片上的氧化物层的化学反应，产生反应层。然后，将基座向上移动到处理室的上部，通过安装在处理室上部的加热器对基座上的硅晶片退火，从而使反应层蒸发。蒸发的反应层被排出室外。可以以高选择性去除氧化物层，同时避免下层的损坏或污染。

6. 发明申请

US20050087893A1 Method of removing oxide layer and semiconductor manufacturing apparatus for removing oxide layer 有权
标题翻译：去除氧化物层的方法和用于去除氧化物层的半导体制造装置
公开(公告)号：US20050087893A1
公开(公告)日：2005-04-28
申请号：US10997902
申请日：2004-11-29
申请人： Seung-pil Chung , Kyu-whan Chang , Sun-jung Lee , Kun-tack Lee , Im-soo Park , Kwang-wook Lee , Moon-hee Lee
发明人： Seung-pil Chung , Kyu-whan Chang , Sun-jung Lee , Kun-tack Lee , Im-soo Park , Kwang-wook Lee , Moon-hee Lee
IPC分类号： H01L21/302 , H01L21/306 , H01L21/3065 , H01L21/31 , H01L21/311 , H01L21/3213
CPC分类号： H01L21/02057 , H01L21/31116
摘要： A method for removing an oxide layer such as a natural oxide layer and a semiconductor manufacturing apparatus which uses the method to remove the oxide layer. A vertically movable susceptor is installed at the lower portion in a processing chamber and a silicon wafer is loaded onto the susceptor when it is at the lower portion of the processing chamber. The air is exhausted from the processing chamber to form a vacuum condition therein. A hydrogen gas in a plasma state and a fluorine-containing gas are supplied into the processing chamber to induce a chemical reaction with the oxide layer on the silicon wafer, resulting in a reaction layer. Then, the susceptor is moved up to the upper portion of the processing chamber, to anneal the silicon wafer on the susceptor with a heater installed at the upper portion of the processing chamber, thus vaporizing the reaction layer. The vaporized reaction layer is exhausted out of the chamber. The oxide layer can be removed with a high selectivity while avoiding damage or contamination of the underlying layer.
摘要翻译：用于除去氧化物层的方法，例如天然氧化物层和使用该方法去除氧化物层的半导体制造装置。垂直移动的基座安装在处理室的下部处，并且当硅晶片位于处理室的下部时，将硅晶片装载到基座上。空气从处理室排出，在其中形成真空条件。将等离子体状态的氢气和含氟气体供给到处理室，以引起与硅晶片上的氧化物层的化学反应，产生反应层。然后，将基座向上移动到处理室的上部，通过安装在处理室上部的加热器对基座上的硅晶片退火，从而使反应层蒸发。蒸发的反应层被排出室外。可以以高选择性去除氧化物层，同时避免下层的损坏或污染。

7. 发明申请

US20060228890A1 Cleaning solution and method of forming a metal pattern for a semiconductor device using the same 审中-公开
标题翻译：清洗液和使用其形成半导体器件的金属图案的方法
公开(公告)号：US20060228890A1
公开(公告)日：2006-10-12
申请号：US11402028
申请日：2006-04-12
申请人： Hyo-san Lee , Sang-yong Kim , Chang-ki Hong , Sang-jun Choi , Woo-gwan Shim , Im-soo Park , Kui-jong Baik , Woong Han , Jung-hun Lim , Sang-won Lee , Sung-bae Kim , Hyun-tak Kim
发明人： Hyo-san Lee , Sang-yong Kim , Chang-ki Hong , Sang-jun Choi , Woo-gwan Shim , Im-soo Park , Kui-jong Baik , Woong Han , Jung-hun Lim , Sang-won Lee , Sung-bae Kim , Hyun-tak Kim
IPC分类号： C03C15/00 , H01L21/302 , B08B6/00 , C09K13/00
CPC分类号： H01L21/0206 , C09K13/08 , C23G1/10 , H01L21/02071
摘要： A cleaning solution includes acetic acid, an inorganic acid, a fluoride compound, and deionized water, and may further include a corrosion inhibitor, a chelating agent, or a combination thereof. The cleaning solution may be used in the formation of a metal pattern in which a metal film including ruthenium is formed on a surface of a substrate, and a portion of the metal film is dry-etched to form a metal film pattern. After dry-etching, the metal film pattern is cleaned with the cleaning solution to remove an etching by-product layer around the metal film pattern. The cleaning solution may also be used to remove an etching by-product layer around an oxide film pattern prior to dry-etching of the metal film.
摘要翻译：清洁溶液包括乙酸，无机酸，氟化物和去离子水，并且还可以包括腐蚀抑制剂，螯合剂或其组合。清洗液可用于形成在基材表面上形成包含钌的金属膜的金属图案，并且将金属膜的一部分干蚀刻以形成金属膜图案。在干蚀刻之后，用清洁溶液清洗金属膜图案以除去金属膜图案周围的蚀刻副产物层。在干蚀刻金属膜之前，还可以使用清洁溶液去除氧化膜图案周围的蚀刻副产物层。

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