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1. 发明授权

US06565736B2 WET PROCESS FOR SEMICONDUCTOR DEVICE FABRICATION USING ANODE WATER CONTAINING OXIDATIVE SUBSTANCES AND CATHODE WATER CONTAINING REDUCTIVE SUBSTANCES, AND ANODE WATER AND CATHODE WATER USED IN THE WET PROCESS 失效
标题翻译：使用含有氧化物质的阳离子水和含有还原性物质的阴极水的半导体器件制造的湿法工艺，以及在湿法中使用的阳极水和阴极水
公开(公告)号：US06565736B2
公开(公告)日：2003-05-20
申请号：US09945722
申请日：2001-09-05
申请人： Im-soo Park , Kun-tack Lee , Young-min Kwon , Sang-rok Hah , Woo-gwan Shim , Hyung-ho Ko
发明人： Im-soo Park , Kun-tack Lee , Young-min Kwon , Sang-rok Hah , Woo-gwan Shim , Hyung-ho Ko
IPC分类号： C02F1461
CPC分类号： C02F1/4618 , C02F2001/46161 , C02F2201/46115 , C02F2201/46145 , C02F2209/04 , C02F2209/06 , H01L21/0206 , H01L21/02063 , H01L21/02068 , H01L21/02071 , H01L21/02074 , Y02E60/366
摘要： A wet process performed in the manufacture of semiconductor devices with cathode water and anode water produced from electrolyte using a 3-cell electrolyzer having an intermediate cell for the electrolyte. The 3-cell electrolyzer includes an anode cell, a cathode cell, and an intermediate cell between the anode and cathode cells, which are partitioned by ion exchange membranes. Deionized water is supplied into the anode and cathode cells, and the intermediate cell is filled with an electrolytic aqueous solution to perform electrolysis. The anode water containing oxidative substances or the cathode water containing reductive substances, which are produced by the electrolysis process, are used in the wet process.
摘要翻译：在使用具有用于电解质的中间电池的3电池电解器的由电解质产生的阴极水和阳极水的半导体器件的制造中进行的湿法。 3电池电解器包括阳极电池，阴极电池和在阳极和阴极电池之间的由离子交换膜分隔的中间电池。将去离子水供应到阳极和阴极单元中，并且中间单元填充有电解水溶液以进行电解。含有氧化物质的阳极水或含有通过电解方法生产的还原性物质的阴极水在湿法中使用。

2. 发明授权

US07135413B2 Cleaning solution for removing damaged portion of ferroelectric layer and cleaning method using the same 失效
公开(公告)号：US07135413B2
公开(公告)日：2006-11-14
申请号：US10727962
申请日：2003-12-04
申请人： Kwang-wook Lee , Im-soo Park , Kun-tack Lee , Young-min Kwon , Sang-rok Hah
发明人： Kwang-wook Lee , Im-soo Park , Kun-tack Lee , Young-min Kwon , Sang-rok Hah
IPC分类号： H01L21/302 , C25F3/30 , C09K13/00
CPC分类号： C04B41/009 , C04B41/5315 , C04B41/91 , C04B2111/00844 , C11D7/02 , C11D7/265 , C11D11/0047 , H01L21/31111 , C04B35/465 , C04B35/491
摘要： A cleaning solution for use in removing a damaged portion of a ferroelectric layer, and a cleaning method using the solution. The cleaning solution includes a fluoride, an organic acid with carboxyl group, an alkaline pH adjusting agent and water.

3. 发明授权

US07237561B2 Apparatus for cleaning semiconductor wafer including heating using a light source and method for cleaning wafer using the same 失效
标题翻译：使用光源进行加热的半导体晶片的清洗装置及使用其进行清洗的方法
公开(公告)号：US07237561B2
公开(公告)日：2007-07-03
申请号：US10685515
申请日：2003-10-16
申请人： Im-soo Park , Kun-tack Lee , Yong-pil Han , Sang-rok Hah
发明人： Im-soo Park , Kun-tack Lee , Yong-pil Han , Sang-rok Hah
IPC分类号： B08B7/04
CPC分类号： H01L21/67115 , B08B3/04 , B08B7/0071 , H01L21/67051 , Y10S134/902
摘要： An apparatus for cleaning a semiconductor wafer and method for cleaning a wafer using the same wherein, the apparatus includes a chamber on which a wafer is mounted, a revolving chuck mounted in the chamber for supporting and fixing the wafer, a nozzle for spraying cleaning solution onto the wafer, a cover for covering an upper part of the chamber, and a light source. The cleaning solution, preferably one of ozone water, hydrogen water, or electrolytic-ionized water, may be heated for a short time and used to clean the wafer.
摘要翻译：一种用于清洁半导体晶片的装置及其清洗方法，其特征在于，所述装置包括：安装有晶片的腔室;安装在所述腔室中的用于支撑和固定晶片的旋转卡盘;用于喷射清洗液的喷嘴在晶片上，用于覆盖室的上部的盖和光源。清洁溶液，优选臭氧水，氢水或电解电离水中的一种可以被加热很短时间并用于清洁晶片。

4. 发明授权

US06712078B2 Apparatus for cleaning semiconductor wafer and method for cleaning wafer using the same 失效
标题翻译：用于清洁半导体晶片的设备及使用其清洁晶片的方法
公开(公告)号：US06712078B2
公开(公告)日：2004-03-30
申请号：US09899226
申请日：2001-07-06
申请人： Im-soo Park , Kun-tack Lee , Yong-pil Han , Sang-rok Hah
发明人： Im-soo Park , Kun-tack Lee , Yong-pil Han , Sang-rok Hah
IPC分类号： B08B704
CPC分类号： H01L21/67115 , B08B3/04 , B08B7/0071 , H01L21/67051 , Y10S134/902
摘要： An apparatus for cleaning a semiconductor wafer and method for cleaning a wafer using the same wherein, the apparatus includes a chamber on which a wafer is mounted, a revolving chuck mounted in the chamber for supporting and fixing the wafer, a nozzle for spraying cleaning solution onto the wafer, a cover for covering an upper part of the chamber, a heating lamp fixed on an upper part of the cover for heating the wafer or the cleaning solution, a cooling water conduit surrounding the cover, and an antipollution plate mounted on a lower part of the heating lamp in the cover for preventing the heating lamp from being polluted by the cleaning solution. According to an embodiment of the present invention, the cleaning solution, preferably of ozone water, hydrogen water, or electrolytic-ionized water, is heated for a short time and used to clean the wafer.
摘要翻译：一种用于清洁半导体晶片的装置及其清洗方法，其特征在于，所述装置包括：安装有晶片的腔室;安装在所述腔室中的用于支撑和固定晶片的旋转卡盘;用于喷射清洗液的喷嘴在所述晶片上，覆盖所述室的上部的盖，固定在所述盖的上部用于加热所述晶片或所述清洁溶液的加热灯，围绕所述盖的冷却水导管和安装在所述盖上的防污染板罩中的加热灯的下部，以防止加热灯被清洁溶液污染。根据本发明的一个实施方案，优选将臭氧水，氢水或电解电离水的清洁溶液加热很短时间并用于清洁晶片。

5. 发明申请

US20050121053A1 Single type of semiconductor wafer cleaning apparatus and method of using the same 有权
标题翻译：单种半导体晶片清洗装置及其使用方法
公开(公告)号：US20050121053A1
公开(公告)日：2005-06-09
申请号：US11037257
申请日：2005-01-19
申请人： Kun-tack Lee , Yong-pil Han , Sang-rok Hah
发明人： Kun-tack Lee , Yong-pil Han , Sang-rok Hah
IPC分类号： B08B5/00 , B08B3/08 , B08B3/12 , H01L21/304 , B08B3/00
CPC分类号： B08B3/12 , B08B3/08 , Y10S134/902
摘要： A semiconductor wafer cleaning apparatus includes a gas spraying unit, having a gas injection tube and a gas guard extending therearound, for spraying cleaning gas into a water layer formed on a wafer. The gas guard forms a small chamber just above the water layer, so that the partial pressure of gas injected from the gas injection tube is increased in the small chamber, whereupon the cleaning gas readily dissolves in the water layer. As a result, a cleaning solution having a high concentration of cleaning gas is produced, whereby the cleaning efficacy of the solution is high. Subsequently, a drying gas, such as isopropyl alcohol, for drying the wafer can be ejected onto the water layer using the gas spraying unit. Thus, the semiconductor wafer cleaning apparatus has a simple structure.
摘要翻译：半导体晶片清洗装置包括气体喷射单元，其具有气体注入管和在其周围延伸的气体保护器，用于将清洁气体喷射到形成在晶片上的水层中。气体保护罩在水层正上方形成一个小室，使得在小室中从气体注入管注入的气体的分压增加，从而清洗气体容易溶解在水层中。结果，产生清洗气体浓度高的清洗液，溶液的清洗效果高。随后，使用气体喷射单元将用于干燥晶片的干燥气体（例如异丙醇）喷射到水层上。因此，半导体晶片清洁装置具有简单的结构。

6. 发明授权

US06860277B2 Single type of semiconductor wafer cleaning device 有权
标题翻译：单一型半导体晶圆清洗装置
公开(公告)号：US06860277B2
公开(公告)日：2005-03-01
申请号：US10017415
申请日：2001-12-18
申请人： Kun-tack Lee , Yong-pil Han , Sang-rok Hah
发明人： Kun-tack Lee , Yong-pil Han , Sang-rok Hah
IPC分类号： B08B5/00 , B08B3/08 , B08B3/12 , H01L21/304 , B08B3/00
CPC分类号： B08B3/12 , B08B3/08 , Y10S134/902
摘要： A semiconductor wafer cleaning apparatus includes a gas spraying unit, having a gas injection tube and a gas guard extending therearound, for spraying cleaning gas into a water layer formed on a wafer. The gas guard forms a small chamber just above the water layer, so that the partial pressure of gas injected from the gas injection tube is increased in the small chamber, whereupon the cleaning gas readily dissolves in the water layer. As a result, a cleaning solution having a high concentration of cleaning gas is produced, whereby the cleaning efficacy of the solution is high. Subsequently, a drying gas, such as isopropyl alcohol, for drying the wafer can be ejected onto the water layer using the gas spraying unit. Thus, the semiconductor wafer cleaning apparatus has a simple structure.
摘要翻译：半导体晶片清洗装置包括气体喷射单元，其具有气体注入管和在其周围延伸的气体保护器，用于将清洁气体喷射到形成在晶片上的水层中。气体保护罩在水层正上方形成一个小室，使得在小室中从气体注入管注入的气体的分压增加，从而清洗气体容易溶解在水层中。结果，产生清洗气体浓度高的清洗液，溶液的清洗效果高。随后，使用气体喷射单元将用于干燥晶片的干燥气体（例如异丙醇）喷射到水层上。因此，半导体晶片清洁装置具有简单的结构。

7. 发明授权

US06610596B1 Method of forming metal interconnection using plating and semiconductor device manufactured by the method 有权
标题翻译：使用该方法制造的使用电镀和半导体器件形成金属互连的方法
公开(公告)号：US06610596B1
公开(公告)日：2003-08-26
申请号：US09662120
申请日：2000-09-14
申请人： Jong-won Lee , Bo-un Yoon , Kun-tack Lee , Sang-rok Hah
发明人： Jong-won Lee , Bo-un Yoon , Kun-tack Lee , Sang-rok Hah
IPC分类号： H01L2144
CPC分类号： H01L21/7684 , H01L21/76879
摘要： A method is provided for forming a metal interconnection using a plating process, which can improve the throughput and reliability of semiconductor devices by decreasing the required polishing in a chemical mechanical polishing process. A semiconductor device manufactured by this method is also provided. In the method of forming a metal interconnection, a recess region is formed in a portion of an insulation layer formed over a substrate, i.e., where a metal interconnection layer will be formed. A diffusion prevention layer is formed over the substrate, the insulation layer, and the recess region. Then, a metal seed layer is formed over the diffusion prevention layer only in the recess region using a chemical mechanical polishing process or an etch back process. A conductive plating layer is then formed on the metal seed layer only in the recess region. Thereafter, surface polarization is performed to form a metal interconnection layer in the recess region. The plating layer may be formed after forming the seed layer only in the bottom portion of the recess region.
摘要翻译：提供了一种使用电镀工艺形成金属互连的方法，其可以通过减少化学机械抛光工艺中所需的抛光来提高半导体器件的生产能力和可靠性。还提供了通过该方法制造的半导体器件。在形成金属互连的方法中，在形成在基板上的绝缘层的一部分中，即将形成金属互连层的区域中形成凹陷区域。在基板，绝缘层和凹部区域上形成扩散防止层。然后，使用化学机械抛光工艺或回蚀工艺，仅在凹陷区域中在扩散防止层上形成金属种子层。然后在金属种子层上仅在凹陷区域中形成导电镀层。此后，进行表面极化以在凹部区域中形成金属互连层。可以在仅在凹部的底部形成种子层之后形成镀层。

8. 发明授权

US07153370B2 Method of cleaning semiconductor wafer 有权
标题翻译：半导体晶片清洗方法
公开(公告)号：US07153370B2
公开(公告)日：2006-12-26
申请号：US11037257
申请日：2005-01-19
申请人： Kun-tack Lee , Yong-pil Han , Sang-rok Hah
发明人： Kun-tack Lee , Yong-pil Han , Sang-rok Hah
IPC分类号： B08B3/00
CPC分类号： B08B3/12 , B08B3/08 , Y10S134/902
摘要： The present application discloses a method of cleaning a semiconductor wafer by mounting a wafer to a chuck, positioning a gas guard, defining therein a chamber having an open bottom, immediately above the layer of water, spraying de-ionized water onto the wafer while rotating the chuck at a location outside the chamber when the wafer is mounted to the chuck, to thereby form a layer of water on the wafer, and spraying a cleaning gas from a gas spraying unit disposed above said chuck through the chamber and into the layer of water to thereby cause the cleaning gas to dissolve in the layer of water, and at the same time moving the chamber across a surface of the wafer, to thereby clean the wafer, wherein said gas spraying unit includes a gas injection tube oriented to inject the cleaning gas towards the wafer mounted to the chuck, and the gas guard connected to the gas injection tube.
摘要翻译：本申请公开了一种通过将晶片安装到卡盘来清洁半导体晶片的方法，在其上方定位一个气体保护器，其中定义了一个具有开口底部的腔室，同时旋转地将去离子水喷射到晶片上当晶片安装到卡盘上时，卡盘位于室外的位置处，从而在晶片上形成一层水，并且将来自设置在卡盘上方的气体喷射单元的清洁气体喷射通过腔室并进入水，从而使清洁气体溶解在水层中，并且同时使腔室移动通过晶片的表面，从而清洁晶片，其中所述气体喷射单元包括朝向注射将清洁气体朝向安装到卡盘的晶片清洁，以及连接到气体注入管的气体保护器。

9. 发明申请

US20080014752A1 Method of Forming Fine Pitch Hardmask Patterns and Method of Forming Fine Patterns of Semiconductor Device Using the Same 有权
标题翻译：形成精细间距硬掩模图案的方法和使用其形成半导体器件的精细图案的方法
公开(公告)号：US20080014752A1
公开(公告)日：2008-01-17
申请号：US11738155
申请日：2007-04-20
申请人： Ji-hoon Cha , Chang-ki Hong , Kun-tack Lee , Woo-gwan Shim , Chang-sup Mun , Ho-wook Choi
发明人： Ji-hoon Cha , Chang-ki Hong , Kun-tack Lee , Woo-gwan Shim , Chang-sup Mun , Ho-wook Choi
IPC分类号： H01L21/311
CPC分类号： H01L21/3086 , H01L21/0337 , H01L21/0338 , H01L21/3088 , H01L21/32139
摘要： A method of forming fine pitch hardmask patterns includes forming a hardmask layer on a substrate and forming a plurality of first mask patterns on the hardmask layer. A buffer layer is formed on the plurality of first mask patterns, and has an upper surface defining recesses between adjacent first mask patterns. Second mask patterns are formed within the recesses formed in the upper surface of the buffer layer. The buffer layer is partially removed to expose upper surfaces of the plurality of first mask patterns, and the buffer layer is then partially removed using the first mask patterns and the second mask patterns as an etch mask to expose the hardmask layer between the first mask pattern and the second mask pattern. Using the first mask patterns and the second mask patterns as an etch mask, the hardmask layer is etched to form hardmask patterns.
摘要翻译：形成细间距硬掩模图案的方法包括在基底上形成硬掩模层并在硬掩模层上形成多个第一掩模图案。缓冲层形成在多个第一掩模图案上，并且具有在相邻的第一掩模图案之间限定凹部的上表面。在形成在缓冲层的上表面中的凹部内形成第二掩模图案。部分地去除缓冲层以暴露多个第一掩模图案的上表面，然后使用第一掩模图案和第二掩模图案作为蚀刻掩模来部分地去除缓冲层，以在第一掩模图案之间暴露硬掩模层和第二掩模图案。使用第一掩模图案和第二掩模图案作为蚀刻掩模，硬掩模层被蚀刻以形成硬掩模图案。

10. 发明授权

US07141123B2 Method of and apparatus for removing contaminants from surface of a substrate 有权
标题翻译：从基材表面去除污染物的方法和设备
公开(公告)号：US07141123B2
公开(公告)日：2006-11-28
申请号：US10759093
申请日：2004-01-20
申请人： Moon-hee Lee , Kun-tack Lee , Woo-gwan Shim , Jong-ho Chung
发明人： Moon-hee Lee , Kun-tack Lee , Woo-gwan Shim , Jong-ho Chung
IPC分类号： B08B7/00 , B08B3/12 , B08B6/00 , B08B3/00 , B08B5/00 , B08B1/02 , B08B7/04
CPC分类号： H01L21/67028 , B08B7/0057 , B08B7/02 , B24C1/003 , Y10S134/902
摘要： A cleanling apparatus for removing contaminants from the surface of a substrate includes two parts: one which produces an aerosol including frozen particles and directs the aerosol onto the surface of the substrate to remove contaminants from the surface by physical force, and another part in which a fluid including a gaseous reactant is directed onto the surface of the substrate while the surface is irradiated to cause a chemical reaction between the reactant and organic contaminants on the surface, to chemically removing the organic contaminants. In the method of cleaning the substrate, the physical and chemical cleaning processes are carried out in a separate manner from one another so that the frozen particles of the aerosol are not exposed to the effects of the light used in irradiating the surface of the substrate. Therefore, the effectiveness of the aerosol in cleaning the substrate is maximized.
摘要翻译：用于从基材表面除去污染物的清洁装置包括两部分：一种产生包含冷冻颗粒的气溶胶并将气溶胶引导到基板的表面上以通过物理力从表面去除污染物，另一部分包含气态反应物的流体被引导到基底的表面上，同时照射表面以引起反应物和表面上的有机污染物之间的化学反应，以化学去除有机污染物。在清洗基板的方法中，物理和化学清洗过程以彼此分离的方式进行，使得气溶胶的冻结颗粒不暴露于在照射基板的表面时使用的光的影响。因此，气溶胶在清洁基材中的有效性最大化。

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