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1. 发明授权

US06565736B2 WET PROCESS FOR SEMICONDUCTOR DEVICE FABRICATION USING ANODE WATER CONTAINING OXIDATIVE SUBSTANCES AND CATHODE WATER CONTAINING REDUCTIVE SUBSTANCES, AND ANODE WATER AND CATHODE WATER USED IN THE WET PROCESS 失效
标题翻译：使用含有氧化物质的阳离子水和含有还原性物质的阴极水的半导体器件制造的湿法工艺，以及在湿法中使用的阳极水和阴极水
公开(公告)号：US06565736B2
公开(公告)日：2003-05-20
申请号：US09945722
申请日：2001-09-05
申请人： Im-soo Park , Kun-tack Lee , Young-min Kwon , Sang-rok Hah , Woo-gwan Shim , Hyung-ho Ko
发明人： Im-soo Park , Kun-tack Lee , Young-min Kwon , Sang-rok Hah , Woo-gwan Shim , Hyung-ho Ko
IPC分类号： C02F1461
CPC分类号： C02F1/4618 , C02F2001/46161 , C02F2201/46115 , C02F2201/46145 , C02F2209/04 , C02F2209/06 , H01L21/0206 , H01L21/02063 , H01L21/02068 , H01L21/02071 , H01L21/02074 , Y02E60/366
摘要： A wet process performed in the manufacture of semiconductor devices with cathode water and anode water produced from electrolyte using a 3-cell electrolyzer having an intermediate cell for the electrolyte. The 3-cell electrolyzer includes an anode cell, a cathode cell, and an intermediate cell between the anode and cathode cells, which are partitioned by ion exchange membranes. Deionized water is supplied into the anode and cathode cells, and the intermediate cell is filled with an electrolytic aqueous solution to perform electrolysis. The anode water containing oxidative substances or the cathode water containing reductive substances, which are produced by the electrolysis process, are used in the wet process.
摘要翻译：在使用具有用于电解质的中间电池的3电池电解器的由电解质产生的阴极水和阳极水的半导体器件的制造中进行的湿法。 3电池电解器包括阳极电池，阴极电池和在阳极和阴极电池之间的由离子交换膜分隔的中间电池。将去离子水供应到阳极和阴极单元中，并且中间单元填充有电解水溶液以进行电解。含有氧化物质的阳极水或含有通过电解方法生产的还原性物质的阴极水在湿法中使用。

2. 发明授权

US07745338B2 Method of forming fine pitch hardmask patterns and method of forming fine patterns of semiconductor device using the same 有权
标题翻译：形成细间距硬掩模图案的方法和使用其形成精细图案的半导体器件的方法
公开(公告)号：US07745338B2
公开(公告)日：2010-06-29
申请号：US11738155
申请日：2007-04-20
申请人： Ji-hoon Cha , Chang-ki Hong , Kun-tack Lee , Woo-gwan Shim , Chang-sup Mun , Ho-wook Choi
发明人： Ji-hoon Cha , Chang-ki Hong , Kun-tack Lee , Woo-gwan Shim , Chang-sup Mun , Ho-wook Choi
IPC分类号： H01L21/311 , H01L21/76 , H01L21/4763
CPC分类号： H01L21/3086 , H01L21/0337 , H01L21/0338 , H01L21/3088 , H01L21/32139
摘要： A method of forming fine pitch hardmask patterns includes forming a hardmask layer on a substrate and forming a plurality of first mask patterns on the hardmask layer. A buffer layer is formed on the plurality of first mask patterns, and has an upper surface defining recesses between adjacent first mask patterns. Second mask patterns are formed within the recesses formed in the upper surface of the buffer layer. The buffer layer is partially removed to expose upper surfaces of the plurality of first mask patterns, and the buffer layer is then partially removed using the first mask patterns and the second mask patterns as an etch mask to expose the hardmask layer between the first mask pattern and the second mask pattern. Using the first mask patterns and the second mask patterns as an etch mask, the hardmask layer is etched to form hardmask patterns.
摘要翻译：形成细间距硬掩模图案的方法包括在基底上形成硬掩模层并在硬掩模层上形成多个第一掩模图案。缓冲层形成在多个第一掩模图案上，并且具有在相邻的第一掩模图案之间限定凹部的上表面。在形成在缓冲层的上表面中的凹部内形成第二掩模图案。部分地去除缓冲层以暴露多个第一掩模图案的上表面，然后使用第一掩模图案和第二掩模图案作为蚀刻掩模来部分地去除缓冲层，以在第一掩模图案之间暴露硬掩模层和第二掩模图案。使用第一掩模图案和第二掩模图案作为蚀刻掩模，硬掩模层被蚀刻以形成硬掩模图案。

3. 发明申请

US20080014752A1 Method of Forming Fine Pitch Hardmask Patterns and Method of Forming Fine Patterns of Semiconductor Device Using the Same 有权
标题翻译：形成精细间距硬掩模图案的方法和使用其形成半导体器件的精细图案的方法
公开(公告)号：US20080014752A1
公开(公告)日：2008-01-17
申请号：US11738155
申请日：2007-04-20
申请人： Ji-hoon Cha , Chang-ki Hong , Kun-tack Lee , Woo-gwan Shim , Chang-sup Mun , Ho-wook Choi
发明人： Ji-hoon Cha , Chang-ki Hong , Kun-tack Lee , Woo-gwan Shim , Chang-sup Mun , Ho-wook Choi
IPC分类号： H01L21/311
CPC分类号： H01L21/3086 , H01L21/0337 , H01L21/0338 , H01L21/3088 , H01L21/32139
摘要： A method of forming fine pitch hardmask patterns includes forming a hardmask layer on a substrate and forming a plurality of first mask patterns on the hardmask layer. A buffer layer is formed on the plurality of first mask patterns, and has an upper surface defining recesses between adjacent first mask patterns. Second mask patterns are formed within the recesses formed in the upper surface of the buffer layer. The buffer layer is partially removed to expose upper surfaces of the plurality of first mask patterns, and the buffer layer is then partially removed using the first mask patterns and the second mask patterns as an etch mask to expose the hardmask layer between the first mask pattern and the second mask pattern. Using the first mask patterns and the second mask patterns as an etch mask, the hardmask layer is etched to form hardmask patterns.
摘要翻译：形成细间距硬掩模图案的方法包括在基底上形成硬掩模层并在硬掩模层上形成多个第一掩模图案。缓冲层形成在多个第一掩模图案上，并且具有在相邻的第一掩模图案之间限定凹部的上表面。在形成在缓冲层的上表面中的凹部内形成第二掩模图案。部分地去除缓冲层以暴露多个第一掩模图案的上表面，然后使用第一掩模图案和第二掩模图案作为蚀刻掩模来部分地去除缓冲层，以在第一掩模图案之间暴露硬掩模层和第二掩模图案。使用第一掩模图案和第二掩模图案作为蚀刻掩模，硬掩模层被蚀刻以形成硬掩模图案。

4. 发明授权

US07141123B2 Method of and apparatus for removing contaminants from surface of a substrate 有权
标题翻译：从基材表面去除污染物的方法和设备
公开(公告)号：US07141123B2
公开(公告)日：2006-11-28
申请号：US10759093
申请日：2004-01-20
申请人： Moon-hee Lee , Kun-tack Lee , Woo-gwan Shim , Jong-ho Chung
发明人： Moon-hee Lee , Kun-tack Lee , Woo-gwan Shim , Jong-ho Chung
IPC分类号： B08B7/00 , B08B3/12 , B08B6/00 , B08B3/00 , B08B5/00 , B08B1/02 , B08B7/04
CPC分类号： H01L21/67028 , B08B7/0057 , B08B7/02 , B24C1/003 , Y10S134/902
摘要： A cleanling apparatus for removing contaminants from the surface of a substrate includes two parts: one which produces an aerosol including frozen particles and directs the aerosol onto the surface of the substrate to remove contaminants from the surface by physical force, and another part in which a fluid including a gaseous reactant is directed onto the surface of the substrate while the surface is irradiated to cause a chemical reaction between the reactant and organic contaminants on the surface, to chemically removing the organic contaminants. In the method of cleaning the substrate, the physical and chemical cleaning processes are carried out in a separate manner from one another so that the frozen particles of the aerosol are not exposed to the effects of the light used in irradiating the surface of the substrate. Therefore, the effectiveness of the aerosol in cleaning the substrate is maximized.
摘要翻译：用于从基材表面除去污染物的清洁装置包括两部分：一种产生包含冷冻颗粒的气溶胶并将气溶胶引导到基板的表面上以通过物理力从表面去除污染物，另一部分包含气态反应物的流体被引导到基底的表面上，同时照射表面以引起反应物和表面上的有机污染物之间的化学反应，以化学去除有机污染物。在清洗基板的方法中，物理和化学清洗过程以彼此分离的方式进行，使得气溶胶的冻结颗粒不暴露于在照射基板的表面时使用的光的影响。因此，气溶胶在清洁基材中的有效性最大化。

5. 发明授权

US06701942B2 Method of and apparatus for removing contaminants from surface of a substrate 有权
标题翻译：从基材表面去除污染物的方法和设备
公开(公告)号：US06701942B2
公开(公告)日：2004-03-09
申请号：US10012564
申请日：2001-12-12
申请人： Moon-hee Lee , Kun-tack Lee , Woo-gwan Shim , Jong-ho Chung
发明人： Moon-hee Lee , Kun-tack Lee , Woo-gwan Shim , Jong-ho Chung
IPC分类号： B08B302
CPC分类号： H01L21/67028 , B08B7/0057 , B08B7/02 , B24C1/003 , Y10S134/902
摘要： A cleaning apparatus for removing contaminants from the surface of a substrate includes two parts: one which produces an aerosol including frozen particles and directs the aerosol onto the surface of the substrate to remove contaminants from the surface by physical force, and another part in which a fluid including a gaseous reactant is directed onto the surface of the substrate while the surface is irradiated to cause a chemical reaction between the reactant and organic contaminants on the surface, to chemically removing the organic contaminants. In the method of cleaning the substrate, the physical and chemical cleaning processes are carried out in a separate manner from one another so that the frozen particles of the aerosol are not exposed to the effects of the light used in irradiating the surface of the substrate. Therefore, the effectiveness of the aerosol in cleaning the substrate is maximized.
摘要翻译：用于从基材表面去除污染物的清洁装置包括两部分：一个产生包含冷冻颗粒的气溶胶并将气溶胶引导到基板的表面上以通过物理力从表面去除污染物，另一部分包含气态反应物的流体被引导到基底的表面上，同时照射表面以引起反应物和表面上的有机污染物之间的化学反应，以化学去除有机污染物。在清洗基板的方法中，物理和化学清洗过程以彼此分离的方式进行，使得气溶胶的冻结颗粒不暴露于在照射基板的表面时使用的光的影响。因此，气溶胶在清洁基材中的有效性最大化。

6. 发明授权

US06844229B2 Method of manufacturing semiconductor device having storage electrode of capacitor 失效
标题翻译：制造具有电容器的存储电极的半导体器件的方法
公开(公告)号：US06844229B2
公开(公告)日：2005-01-18
申请号：US09999150
申请日：2001-10-31
申请人： Moon-hee Lee , Woo-gwan Shim , Hyung-ho Ko , Jong-ho Chung
发明人： Moon-hee Lee , Woo-gwan Shim , Hyung-ho Ko , Jong-ho Chung
IPC分类号： H01L27/108 , H01L21/02 , H01L21/8242
CPC分类号： H01L28/91 , H01L27/10855
摘要： A method of manufacturing a semiconductor device having a storage electrode of a capacitor is provided. The method includes the steps of: forming a contact hole perforating through an interlayer dielectric layer on a semiconductor substrate; forming a conductive plug to fill the contact hole and expose the surface of the interlayer dielectric layer; forming molds on the interlayer dielectric layer to expose the surface of the conductive plug; recessing the upper surface of the conductive plug to expose a portion of the sidewalls of the interlayer dielectric layer; forming an electrode layer to cover the recessed conductive plug, and the sidewalls of the interlayer dielectric layer and the molds; and removing upper surfaces of the electrode layer to make a storage electrode until molds are exposed. The method further includes the steps of: forming a conductive pad electrically connected to the semiconductor substrate and a lower insulating layer surrounding the conductive pad; and forming bit line stacks on the lower insulating layer, wherein the interlayer dielectric layer covers the bit line stacks, and the contact hole between the bit line stacks exposes the conductive pad.
摘要翻译：提供一种制造具有电容器的存储电极的半导体器件的方法。该方法包括以下步骤：形成穿过半导体衬底上的层间电介质层的接触孔; 形成导电插塞以填充接触孔并暴露层间电介质层的表面; 在所述层间电介质层上形成模具以暴露所述导电插塞的表面; 使导电插塞的上表面凹陷以暴露层间电介质层的侧壁的一部分; 形成电极层以覆盖凹入的导电插塞，以及层间绝缘层的侧壁和模具; 并且除去电极层的上表面以形成存储电极，直到模具露出。该方法还包括以下步骤：形成电连接到半导体衬底的导电焊盘和围绕导电焊盘的下绝缘层; 以及在所述下绝缘层上形成位线堆叠，其中所述层间电介质层覆盖所述位线堆叠，并且所述位线堆叠之间的所述接触孔暴露所述导电焊盘。

7. 发明申请

US20060228890A1 Cleaning solution and method of forming a metal pattern for a semiconductor device using the same 审中-公开
标题翻译：清洗液和使用其形成半导体器件的金属图案的方法
公开(公告)号：US20060228890A1
公开(公告)日：2006-10-12
申请号：US11402028
申请日：2006-04-12
申请人： Hyo-san Lee , Sang-yong Kim , Chang-ki Hong , Sang-jun Choi , Woo-gwan Shim , Im-soo Park , Kui-jong Baik , Woong Han , Jung-hun Lim , Sang-won Lee , Sung-bae Kim , Hyun-tak Kim
发明人： Hyo-san Lee , Sang-yong Kim , Chang-ki Hong , Sang-jun Choi , Woo-gwan Shim , Im-soo Park , Kui-jong Baik , Woong Han , Jung-hun Lim , Sang-won Lee , Sung-bae Kim , Hyun-tak Kim
IPC分类号： C03C15/00 , H01L21/302 , B08B6/00 , C09K13/00
CPC分类号： H01L21/0206 , C09K13/08 , C23G1/10 , H01L21/02071
摘要： A cleaning solution includes acetic acid, an inorganic acid, a fluoride compound, and deionized water, and may further include a corrosion inhibitor, a chelating agent, or a combination thereof. The cleaning solution may be used in the formation of a metal pattern in which a metal film including ruthenium is formed on a surface of a substrate, and a portion of the metal film is dry-etched to form a metal film pattern. After dry-etching, the metal film pattern is cleaned with the cleaning solution to remove an etching by-product layer around the metal film pattern. The cleaning solution may also be used to remove an etching by-product layer around an oxide film pattern prior to dry-etching of the metal film.
摘要翻译：清洁溶液包括乙酸，无机酸，氟化物和去离子水，并且还可以包括腐蚀抑制剂，螯合剂或其组合。清洗液可用于形成在基材表面上形成包含钌的金属膜的金属图案，并且将金属膜的一部分干蚀刻以形成金属膜图案。在干蚀刻之后，用清洁溶液清洗金属膜图案以除去金属膜图案周围的蚀刻副产物层。在干蚀刻金属膜之前，还可以使用清洁溶液去除氧化膜图案周围的蚀刻副产物层。

8. 发明申请

US20060246666A1 Method of fabricating flash memory with u-shape floating gate 审中-公开
标题翻译：用u形浮栅制造闪速存储器的方法
公开(公告)号：US20060246666A1
公开(公告)日：2006-11-02
申请号：US11410837
申请日：2006-04-26
申请人： Jeong-nam Han , Dong-chan Kim , Chang-jin Kang , Kyeong-koo Chi , Woo-gwan Shim , Hyo-san Lee , Chang-ki Hong , Sang-jun Choi
发明人： Jeong-nam Han , Dong-chan Kim , Chang-jin Kang , Kyeong-koo Chi , Woo-gwan Shim , Hyo-san Lee , Chang-ki Hong , Sang-jun Choi
IPC分类号： H01L21/336
CPC分类号： H01L27/11526 , H01L27/105 , H01L27/11543
摘要： A method of fabricating a flash memory having a U-shape floating gate is provided. The method includes forming adjacent isolation layers separated by a gap and forming a tunnel oxide layer in the gap. After a conductive layer is formed on the tunnel oxide layer to a thickness not to fill the gap, a polishing sacrificial layer is formed on the conductive layer. The sacrificial layer and the conductive layer on the isolation layers are removed, thereby forming a U-shape floating gate self-aligned in the gap, and concurrently forming a sacrificial layer pattern within an inner portion of the floating gate. Selected isolation layers are then recessed to expose sidewalls of the floating gate. The sacrificial layer pattern is then removed from the floating gate to expose an upper surface of the floating gate.
摘要翻译：提供一种制造具有U形浮动栅极的闪速存储器的方法。该方法包括形成由间隙隔开并在间隙中形成隧道氧化物层的相邻隔离层。在隧道氧化物层上形成导电层至不填充间隙的厚度之后，在导电层上形成抛光牺牲层。除去隔离层上的牺牲层和导电层，从而在间隙中形成自对准的U形浮动栅极，同时在浮栅的内部部分内形成牺牲层图案。然后将选定的隔离层凹入以露出浮动栅极的侧壁。然后从浮动栅极去除牺牲层图案以暴露浮动栅极的上表面。

9. 发明申请

US20070082471A1 Method of fabricating semiconductor memory device having plurality of storage node electrodes 有权
标题翻译：制造具有多个存储节点电极的半导体存储器件的方法
公开(公告)号：US20070082471A1
公开(公告)日：2007-04-12
申请号：US11546420
申请日：2006-10-12
申请人： Dae-hyuk Kang , Jung-min Oh , Chang-ki Hong , Sang-jun Choi , Woo-gwan Shim
发明人： Dae-hyuk Kang , Jung-min Oh , Chang-ki Hong , Sang-jun Choi , Woo-gwan Shim
IPC分类号： H01L21/3205
CPC分类号： H01L28/90 , H01L21/0334 , H01L21/31144 , H01L27/10852
摘要： In one aspect, a method of fabricating a semiconductor memory device is provided which includes forming a mold insulating film over first and second portions of a semiconductor substrate, where the mold insulating film includes a plurality of storage node electrode holes spaced apart over the first portion of the semiconductor substrate. The method further includes forming a plurality of storage node electrodes on inner surfaces of the storage node electrode holes, respectively, and forming a capping film which covers the storage node electrodes and a first portion of the mold insulating film located over the first portion of the semiconductor substrate, and which exposes a second portion of the mold insulating film located over the second portion of the semiconductor substrate. The method further includes selectively removing, including wet etching, the mold insulating film to expose a sidewall of at least one storage node electrode among the storage node electrodes covered by the capping film, and removing the capping film by dry etching to expose upper portions of the storage node electrodes.
摘要翻译：一方面，提供一种制造半导体存储器件的方法，其包括在半导体衬底的第一和第二部分上形成模绝缘膜，其中所述模绝缘膜包括在所述第一部分上分开的多个存储节点电极孔的半导体衬底。该方法还包括分别在存储节点电极孔的内表面上形成多个存储节点电极，并且形成覆盖存储节点电极的封盖膜和位于第一部分上的模具绝缘膜的第一部分半导体衬底，并且暴露位于半导体衬底的第二部分上方的模具绝缘膜的第二部分。该方法还包括选择性地去除包括湿式蚀刻的模具绝缘膜，以暴露由覆盖膜覆盖的存储节点电极中的至少一个存储节点电极的侧壁，以及通过干蚀刻去除封盖膜以暴露存储节点电极。

10. 发明授权

US07459370B2 Method of fabricating semiconductor memory device having plurality of storage node electrodes 有权
标题翻译：制造具有多个存储节点电极的半导体存储器件的方法
公开(公告)号：US07459370B2
公开(公告)日：2008-12-02
申请号：US11546420
申请日：2006-10-12
申请人： Dae-hyuk Kang , Jung-min Oh , Chang-ki Hong , Sang-jun Choi , Woo-gwan Shim
发明人： Dae-hyuk Kang , Jung-min Oh , Chang-ki Hong , Sang-jun Choi , Woo-gwan Shim
IPC分类号： H01L21/20
CPC分类号： H01L28/90 , H01L21/0334 , H01L21/31144 , H01L27/10852
摘要： In one aspect, a method of fabricating a semiconductor memory device is provided which includes forming a mold insulating film over first and second portions of a semiconductor substrate, where the mold insulating film includes a plurality of storage node electrode holes spaced apart over the first portion of the semiconductor substrate. The method further includes forming a plurality of storage node electrodes on inner surfaces of the storage node electrode holes, respectively, and forming a capping film which covers the storage node electrodes and a first portion of the mold insulating film located over the first portion of the semiconductor substrate, and which exposes a second portion of the mold insulating film located over the second portion of the semiconductor substrate. The method further includes selectively removing, including wet etching, the mold insulating film to expose a sidewall of at least one storage node electrode among the storage node electrodes covered by the capping film, and removing the capping film by dry etching to expose upper portions of the storage node electrodes.
摘要翻译：一方面，提供一种制造半导体存储器件的方法，其包括在半导体衬底的第一和第二部分上形成模绝缘膜，其中所述模绝缘膜包括在所述第一部分上分开的多个存储节点电极孔的半导体衬底。该方法还包括分别在存储节点电极孔的内表面上形成多个存储节点电极，并且形成覆盖存储节点电极的封盖膜和位于第一部分上的模具绝缘膜的第一部分半导体衬底，并且暴露位于半导体衬底的第二部分上方的模具绝缘膜的第二部分。该方法还包括选择性地去除包括湿式蚀刻的模具绝缘膜，以暴露由覆盖膜覆盖的存储节点电极中的至少一个存储节点电极的侧壁，以及通过干蚀刻去除封盖膜以暴露存储节点电极。

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