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1. 发明申请

US20090159922A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20090159922A1
公开(公告)日：2009-06-25
申请号：US12209644
申请日：2008-09-12
申请人： Hyun Soo KIM , Joon Seop Kwak , Ki Man Kang , Jin Hyun Lee , Yu Seung Kim , Cheol Soo Sone
发明人： Hyun Soo KIM , Joon Seop Kwak , Ki Man Kang , Jin Hyun Lee , Yu Seung Kim , Cheol Soo Sone
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/641 , H01L33/14 , H01L33/32
摘要： There is provided a nitride semiconductor light emitting device including: a light emitting structure having n-type and p-type nitride semiconductor layers and an active layer formed therebetween; n-type and p-type electrodes electrically connected to the n-type and p-type nitride semiconductors, respectively; and an n-type ohmic contact layer formed between the n-type nitride semiconductor layer and the n-type electrode and having a first layer formed of a material containing In and a second layer formed on the first layer and formed of a material containing W.According to an aspect of the invention, there is provided a nitride semiconductor light emitting device that has an n-type electrode having thermal stability and excellent electrical characteristics without heat treatment.According to another aspect of the invention, there is provided a method of manufacturing a nitride semiconductor light emitting device optimized to obtain the excellent thermal and electrical characteristics.
摘要翻译：提供一种氮化物半导体发光器件，包括：具有n型和p型氮化物半导体层的发光结构和在其间形成的有源层; 分别与n型和p型氮化物半导体电连接的n型和p型电极; 以及形成在n型氮化物半导体层和n型电极之间的n型欧姆接触层，并且具有由含有In的材料形成的第一层和形成在第一层上的由包含W的材料形成的第二层根据本发明的一个方面，提供一种氮化物半导体发光器件，其具有不具有热稳定性的热稳定性和优异的电特性的n型电极。根据本发明的另一方面，提供了一种制造优化以获得优异的热和电特性的氮化物半导体发光器件的方法。

2. 发明授权

US08372672B2 Nitride semiconductor light emitting device and method of manufacturing the same 失效
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US08372672B2
公开(公告)日：2013-02-12
申请号：US12209644
申请日：2008-09-12
申请人： Hyun Soo Kim , Joon Seop Kwak , Ki Man Kang , Jin Hyun Lee , Yu Seung Kim , Cheol Soo Sone
发明人： Hyun Soo Kim , Joon Seop Kwak , Ki Man Kang , Jin Hyun Lee , Yu Seung Kim , Cheol Soo Sone
IPC分类号： H01L21/00
CPC分类号： H01L33/641 , H01L33/14 , H01L33/32
摘要： A nitride semiconductor light emitting device includes a light emitting structure having n-type and p-type nitride semiconductor layers and an active layer formed therebetween. N-type and p-type electrodes are electrically connected to the n-type and p-type nitride semiconductors, respectively. An n-type ohmic contact layer is formed between the n-type nitride semiconductor layer and the n-type electrode and has a first layer of a material In and a second layer formed on the first layer and of a material containing W. The nitride semiconductor light emitting device has thermal stability and excellent electrical characteristics without heat treatment.
摘要翻译：氮化物半导体发光器件包括具有n型和p型氮化物半导体层的发光结构和在它们之间形成的有源层。 N型和p型电极分别电连接到n型和p型氮化物半导体。在n型氮化物半导体层和n型电极之间形成n型欧姆接触层，并且具有形成在第一层上的第一层材料In和形成在第一层上的第二层和含有W的材料。氮化物半导体发光器件具有热稳定性和优异的电热特性而不进行热处理。

3. 发明申请

US20090159920A1 Nitride semiconductor light emitting device and manufacturing method of the same 有权
标题翻译：氮化物半导体发光器件及其制造方法相同
公开(公告)号：US20090159920A1
公开(公告)日：2009-06-25
申请号：US12216568
申请日：2008-07-08
申请人： Hyun Soo Kim , Joon Seop Kwak , Ki Man Kang , Jin Hyun Lee , Cheol Soo Sone , Yu Seung Kim
发明人： Hyun Soo Kim , Joon Seop Kwak , Ki Man Kang , Jin Hyun Lee , Cheol Soo Sone , Yu Seung Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/0095 , H01L33/32 , H01L33/40
摘要： There is provided a nitride semiconductor light emitting device including: a light emitting structure including n-type and p-type nitride semiconductor layers and an active layer disposed therebetween; n- and p-electrodes electrically connected to the n-type and p-type nitride semiconductor layers, respectively; and an n-type ohmic contact layer disposed between the n-type nitride semiconductor layer and the n-electrode and including a first layer and a second layer, the first layer formed of an In-containing material, and the second layer disposed on the first layer and formed of a transparent conductive oxide. The nitride semiconductor light emitting device including the n-electrode exhibits high light transmittance and superior electrical characteristics. Further, the nitride semiconductor light emitting device can be manufactured by an optimal method to ensure superb optical and electrical characteristics.
摘要翻译：提供了一种氮化物半导体发光器件，包括：包括n型和p型氮化物半导体层的发光结构和设置在其间的有源层; 分别与n型和p型氮化物半导体层电连接的n型和p型电极; 以及设置在n型氮化物半导体层和n电极之间并且包括第一层和第二层的n型欧姆接触层，第一层由含In材料形成，第二层设置在第二层上第一层并由透明导电氧化物形成。包括n电极的氮化物半导体发光器件具有高透光率和优异的电特性。此外，可以通过最佳方法制造氮化物半导体发光器件，以确保极好的光学和电气特性。

4. 发明授权

US07928467B2 Nitride semiconductor light emitting device and manufacturing method of the same 有权
标题翻译：氮化物半导体发光器件及其制造方法相同
公开(公告)号：US07928467B2
公开(公告)日：2011-04-19
申请号：US12216568
申请日：2008-07-08
申请人： Hyun Soo Kim , Joon Seop Kwak , Ki Man Kang , Jin Hyun Lee , Cheol Soo Sone , Yu Seung Kim
发明人： Hyun Soo Kim , Joon Seop Kwak , Ki Man Kang , Jin Hyun Lee , Cheol Soo Sone , Yu Seung Kim
IPC分类号： H01L33/00 , H01L33/42
CPC分类号： H01L33/42 , H01L33/0095 , H01L33/32 , H01L33/40
摘要： There is provided a nitride semiconductor light emitting device including: a light emitting structure including n-type and p-type nitride semiconductor layers and an active layer disposed therebetween; n- and p-electrodes electrically connected to the n-type and p-type nitride semiconductor layers, respectively; and an n-type ohmic contact layer disposed between the n-type nitride semiconductor layer and the n-electrode and including a first layer and a second layer, the first layer formed of an In-containing material, and the second layer disposed on the first layer and formed of a transparent conductive oxide. The nitride semiconductor light emitting device including the n-electrode exhibits high light transmittance and superior electrical characteristics. Further, the nitride semiconductor light emitting device can be manufactured by an optimal method to ensure superb optical and electrical characteristics.
摘要翻译：提供了一种氮化物半导体发光器件，包括：包括n型和p型氮化物半导体层的发光结构和设置在其间的有源层; 分别与n型和p型氮化物半导体层电连接的n型和p型电极; 以及设置在n型氮化物半导体层和n电极之间并且包括第一层和第二层的n型欧姆接触层，第一层由含In材料形成，第二层设置在第二层上第一层并由透明导电氧化物形成。包括n电极的氮化物半导体发光器件具有高透光率和优异的电特性。此外，可以通过最佳方法制造氮化物半导体发光器件，以确保极好的光学和电气特性。

5. 发明授权

US07968893B2 Semiconductor light emitting device and method of manufacturing the same 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07968893B2
公开(公告)日：2011-06-28
申请号：US12210472
申请日：2008-09-15
申请人： Sang Yeob Song , Jin Hyun Lee , Yu Seung Kim , Kwang Ki Choi , Pun Jae Choi , Hyun Soo Kim , Sang Bum Lee
发明人： Sang Yeob Song , Jin Hyun Lee , Yu Seung Kim , Kwang Ki Choi , Pun Jae Choi , Hyun Soo Kim , Sang Bum Lee
IPC分类号： H01L31/0256 , H01L33/00 , H01L21/00
CPC分类号： H01L33/40 , H01L33/32
摘要： Disclosed are a semiconductor light emitting device, which can improve characteristics of the semiconductor light emitting device such as a forward voltage characteristic and a turn-on voltage characteristic, increase light emission efficiency by lowering an input voltage, and increase reliability of the semiconductor light emitting device by a low-voltage operation, and a method of manufacturing the same. The semiconductor light emitting device includes: an n-type GaN semiconductor layer; an active layer formed on a gallium face of the n-type GaN semiconductor layer; a p-type semiconductor layer formed on the active layer; and an n-type electrode formed on a nitrogen face of the n-type GaN semiconductor layer and including a lanthanum (La)-nickel (Ni) alloy.
摘要翻译：公开了一种半导体发光器件，其能够提高半导体发光器件的特性，例如正向电压特性和导通电压特性，通过降低输入电压来提高发光效率，并提高半导体发光器件的可靠性器件的低压工作及其制造方法。半导体发光器件包括：n型GaN半导体层; 形成在所述n型GaN半导体层的镓面上的有源层; 形成在有源层上的p型半导体层; 以及形成在n型GaN半导体层的氮面上并包含镧（La） - 镍（Ni）合金的n型电极。

6. 发明授权

US08658329B2 Advanced membrane electrode assemblies for fuel cells 有权
标题翻译：用于燃料电池的先进膜电极组件
公开(公告)号：US08658329B2
公开(公告)日：2014-02-25
申请号：US13528457
申请日：2012-06-20
申请人： Yu Seung Kim , Byran S. Pivovar
发明人： Yu Seung Kim , Byran S. Pivovar
IPC分类号： H01M8/10 , B01J49/00 , C08J5/20
CPC分类号： B01D69/12 , H01M4/881
摘要： A method of preparing advanced membrane electrode assemblies (MEA) for use in fuel cells. A base polymer is selected for a base membrane. An electrode composition is selected to optimize properties exhibited by the membrane electrode assembly based on the selection of the base polymer. A property-tuning coating layer composition is selected based on compatibility with the base polymer and the electrode composition. A solvent is selected based on the interaction of the solvent with the base polymer and the property-tuning coating layer composition. The MEA is assembled by preparing the base membrane and then applying the property-tuning coating layer to form a composite membrane. Finally, a catalyst is applied to the composite membrane.
摘要翻译：一种制备用于燃料电池的先进膜电极组件（MEA）的方法。选择基础聚合物用于基膜。选择电极组合物以根据基础聚合物的选择来优化膜电极组件所表现出的性能。基于与基础聚合物和电极组成的相容性来选择性质调节涂层组合物。基于溶剂与基础聚合物和性能调节涂层组合物的相互作用来选择溶剂。通过制备基膜，然后施加性能调节涂层以形成复合膜来组装MEA。最后，将催化剂应用于复合膜。

7. 发明授权

US08236207B2 Non-aqueous liquid compositions comprising ion exchange polymers reference to related application 有权
标题翻译：包含离子交换聚合物的非水液体组合物参考相关申请
公开(公告)号：US08236207B2
公开(公告)日：2012-08-07
申请号：US12938087
申请日：2010-11-02
申请人： Yu Seung Kim , Kwan-Soo Lee , Tommy Q. T. Rockward
发明人： Yu Seung Kim , Kwan-Soo Lee , Tommy Q. T. Rockward
IPC分类号： H01B1/00 , H01B1/12 , H01B1/02 , H01B1/22 , H01M4/02 , H01M4/88 , H01M4/36 , H01M4/92 , H01M8/00 , C09K3/00 , B01J31/00 , B01J37/00 , B01J23/40 , B01J23/74 , B01J23/00 , C08F4/02 , C08F4/60
CPC分类号： H01B1/122 , H01G11/48 , H01M4/8663 , H01M4/881 , H01M4/8828 , H01M4/92 , Y02E60/13
摘要： Compositions, and methods of making thereof, comprising from about 1% to about 5% of a perfluorinated sulfonic acid ionomer or a hydrocarbon-based ionomer; and from about 95% to about 99% of a solvent, said solvent consisting essentially of a polyol; wherein said composition is substantially free of water and wherein said ionomer is uniformly dispersed in said solvent.
摘要翻译：组合物及其制备方法，包含约1％至约5％的全氟磺酸离聚物或基于烃的离聚物; 和约95％至约99％的溶剂，所述溶剂基本上由多元醇组成; 其中所述组合物基本上不含水，并且其中所述离聚物均匀地分散在所述溶剂中。

8. 发明申请

US20110049441A1 NON-AQUEOUS LIQUID COMPOSITIONS COMPRISING ION EXCHANGE POLYMERS CROSS REFERENCE TO RELATED APPLICATION 有权
标题翻译：包含离子交换聚合物的非水性液体组合物相关申请的交叉引用
公开(公告)号：US20110049441A1
公开(公告)日：2011-03-03
申请号：US12938087
申请日：2010-11-02
申请人： Yu Seung Kim , Kwan-Soo Lee , Tommy Q.T. Rockward
发明人： Yu Seung Kim , Kwan-Soo Lee , Tommy Q.T. Rockward
IPC分类号： H01B1/22 , H01B1/12
CPC分类号： H01B1/122 , H01G11/48 , H01M4/8663 , H01M4/881 , H01M4/8828 , H01M4/92 , Y02E60/13
摘要： Compositions, and methods of making thereof, comprising from about 1% to about 5% of a perfluorinated sulfonic acid ionomer or a hydrocarbon-based ionomer; and from about 95% to about 99% of a solvent, said solvent consisting essentially of a polyol; wherein said composition is substantially free of water and wherein said ionomer is uniformly dispersed in said solvent.
摘要翻译：组合物及其制备方法，包含约1％至约5％的全氟磺酸离聚物或基于烃的离聚物; 和约95％至约99％的溶剂，所述溶剂基本上由多元醇组成; 其中所述组合物基本上不含水，并且其中所述离聚物均匀地分散在所述溶剂中。

9. 发明申请

US20100183804A1 Methods of making membrane electrode assemblies 有权
标题翻译：制造膜电极组件的方法
公开(公告)号：US20100183804A1
公开(公告)日：2010-07-22
申请号：US12321466
申请日：2009-01-20
申请人： Yu Seung Kim , Kwan-Soo Lee , Tommy Q.T. Rockward
发明人： Yu Seung Kim , Kwan-Soo Lee , Tommy Q.T. Rockward
IPC分类号： B05D5/12
CPC分类号： H01M8/1004 , H01M4/8814 , H01M4/8828 , H01M4/8842 , H01M4/8882 , H01M4/8896 , H01M8/1023 , H01M8/1039 , Y02E60/522 , Y02P70/56
摘要： Method of making a membrane electrode assembly comprising: providing a membrane comprising a perfluorinated sulfonic acid; providing a first transfer substrate; applying to a surface of the first transfer substrate a first ink, said first ink comprising an ionomer and a catalyst; applying to the first ink a suitable non-aqueous swelling agent; forming an assembly comprising: the membrane; and the first transfer substrate, wherein the surface of the first transfer substrate comprising the first ink and the non-aqueous swelling agent is disposed upon one surface of the membrane; and heating the assembly at a temperature of 150° C. or less and at a pressure of from about 250 kPa to about 3000 kPa or less for a time suitable to allow substantially complete transfer of the first ink and the second ink to the membrane; and cooling the assembly to room temperature and removing the first transfer substrate and the second transfer substrate.
摘要翻译：制造膜电极组件的方法，包括：提供包含全氟化磺酸的膜; 提供第一转印衬底; 向所述第一转印基板的表面施加第一墨，所述第一墨包含离聚物和催化剂; 向第一油墨施加合适的非水溶胀剂; 形成组件，其包括：所述膜; 和第一转印衬底，其中包含第一油墨和非水溶胀剂的第一转印衬底的表面设置在膜的一个表面上; 并且在150℃或更低的温度和约250kPa至约3000kPa或更低的压力下加热所述组件适合允许所述第一油墨和所述第二油墨基本上完全转移到所述膜的时间; 并将组件冷却至室温并除去第一转移衬底和第二转移衬底。

10. 发明授权

US07460579B2 Multi-wavelength semiconductor laser device 失效
标题翻译：多波长半导体激光器件
公开(公告)号：US07460579B2
公开(公告)日：2008-12-02
申请号：US11159350
申请日：2005-06-23
申请人： Jong Ik Park , Yu Seung Kim , Ki Won Moon , Hye Ran Oh
发明人： Jong Ik Park , Yu Seung Kim , Ki Won Moon , Hye Ran Oh
IPC分类号： H01S5/00
CPC分类号： H01S5/4025 , H01S3/08086 , H01S3/0809
摘要： A semiconductor laser device comprises: a substrate having a top surface divided into a first region and a second region; a high-output LD including a first conductivity-type clad layer, an active layer, and a second conductivity-type clad layer including an upper portion having a first ridge structure, sequentially formed on the first region of the substrate; and a low-output LD including a first conductivity-type clad layer, an active layer, and a second conductivity-type clad layer including an upper portion having a second ridge structure, sequentially formed on the second region of the substrate, wherein the first and second ridge structures are formed in such a manner that they are extended to both ends opposed to each other, the first ridge structure is bent at two or more bending positions, and the second ridge structure is rectilinear.
摘要翻译：半导体激光装置包括：基板，其具有分为第一区域和第二区域的顶表面; 包括依次形成在所述基板的所述第一区域上的包括具有第一脊结构的上部的第一导电型覆盖层，有源层和第二导电型覆盖层的高输出LD，以及依次形成在所述基板的第二区域上的包括第一导电型覆盖层，有源层和包括具有第二脊结构的上部的第二导电型覆盖层的低输出LD，其中，并且第二脊结构形成为使得它们彼此相对延伸到两个端部，第一脊结构在两个或更多个弯曲位置弯曲，并且第二脊结构是直线的。

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