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1. 发明申请

US20090159922A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20090159922A1
公开(公告)日：2009-06-25
申请号：US12209644
申请日：2008-09-12
申请人： Hyun Soo KIM , Joon Seop Kwak , Ki Man Kang , Jin Hyun Lee , Yu Seung Kim , Cheol Soo Sone
发明人： Hyun Soo KIM , Joon Seop Kwak , Ki Man Kang , Jin Hyun Lee , Yu Seung Kim , Cheol Soo Sone
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/641 , H01L33/14 , H01L33/32
摘要： There is provided a nitride semiconductor light emitting device including: a light emitting structure having n-type and p-type nitride semiconductor layers and an active layer formed therebetween; n-type and p-type electrodes electrically connected to the n-type and p-type nitride semiconductors, respectively; and an n-type ohmic contact layer formed between the n-type nitride semiconductor layer and the n-type electrode and having a first layer formed of a material containing In and a second layer formed on the first layer and formed of a material containing W.According to an aspect of the invention, there is provided a nitride semiconductor light emitting device that has an n-type electrode having thermal stability and excellent electrical characteristics without heat treatment.According to another aspect of the invention, there is provided a method of manufacturing a nitride semiconductor light emitting device optimized to obtain the excellent thermal and electrical characteristics.
摘要翻译：提供一种氮化物半导体发光器件，包括：具有n型和p型氮化物半导体层的发光结构和在其间形成的有源层; 分别与n型和p型氮化物半导体电连接的n型和p型电极; 以及形成在n型氮化物半导体层和n型电极之间的n型欧姆接触层，并且具有由含有In的材料形成的第一层和形成在第一层上的由包含W的材料形成的第二层根据本发明的一个方面，提供一种氮化物半导体发光器件，其具有不具有热稳定性的热稳定性和优异的电特性的n型电极。根据本发明的另一方面，提供了一种制造优化以获得优异的热和电特性的氮化物半导体发光器件的方法。

2. 发明授权

US07928467B2 Nitride semiconductor light emitting device and manufacturing method of the same 有权
标题翻译：氮化物半导体发光器件及其制造方法相同
公开(公告)号：US07928467B2
公开(公告)日：2011-04-19
申请号：US12216568
申请日：2008-07-08
申请人： Hyun Soo Kim , Joon Seop Kwak , Ki Man Kang , Jin Hyun Lee , Cheol Soo Sone , Yu Seung Kim
发明人： Hyun Soo Kim , Joon Seop Kwak , Ki Man Kang , Jin Hyun Lee , Cheol Soo Sone , Yu Seung Kim
IPC分类号： H01L33/00 , H01L33/42
CPC分类号： H01L33/42 , H01L33/0095 , H01L33/32 , H01L33/40
摘要： There is provided a nitride semiconductor light emitting device including: a light emitting structure including n-type and p-type nitride semiconductor layers and an active layer disposed therebetween; n- and p-electrodes electrically connected to the n-type and p-type nitride semiconductor layers, respectively; and an n-type ohmic contact layer disposed between the n-type nitride semiconductor layer and the n-electrode and including a first layer and a second layer, the first layer formed of an In-containing material, and the second layer disposed on the first layer and formed of a transparent conductive oxide. The nitride semiconductor light emitting device including the n-electrode exhibits high light transmittance and superior electrical characteristics. Further, the nitride semiconductor light emitting device can be manufactured by an optimal method to ensure superb optical and electrical characteristics.
摘要翻译：提供了一种氮化物半导体发光器件，包括：包括n型和p型氮化物半导体层的发光结构和设置在其间的有源层; 分别与n型和p型氮化物半导体层电连接的n型和p型电极; 以及设置在n型氮化物半导体层和n电极之间并且包括第一层和第二层的n型欧姆接触层，第一层由含In材料形成，第二层设置在第二层上第一层并由透明导电氧化物形成。包括n电极的氮化物半导体发光器件具有高透光率和优异的电特性。此外，可以通过最佳方法制造氮化物半导体发光器件，以确保极好的光学和电气特性。

3. 发明授权

US08372672B2 Nitride semiconductor light emitting device and method of manufacturing the same 失效
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US08372672B2
公开(公告)日：2013-02-12
申请号：US12209644
申请日：2008-09-12
申请人： Hyun Soo Kim , Joon Seop Kwak , Ki Man Kang , Jin Hyun Lee , Yu Seung Kim , Cheol Soo Sone
发明人： Hyun Soo Kim , Joon Seop Kwak , Ki Man Kang , Jin Hyun Lee , Yu Seung Kim , Cheol Soo Sone
IPC分类号： H01L21/00
CPC分类号： H01L33/641 , H01L33/14 , H01L33/32
摘要： A nitride semiconductor light emitting device includes a light emitting structure having n-type and p-type nitride semiconductor layers and an active layer formed therebetween. N-type and p-type electrodes are electrically connected to the n-type and p-type nitride semiconductors, respectively. An n-type ohmic contact layer is formed between the n-type nitride semiconductor layer and the n-type electrode and has a first layer of a material In and a second layer formed on the first layer and of a material containing W. The nitride semiconductor light emitting device has thermal stability and excellent electrical characteristics without heat treatment.
摘要翻译：氮化物半导体发光器件包括具有n型和p型氮化物半导体层的发光结构和在它们之间形成的有源层。 N型和p型电极分别电连接到n型和p型氮化物半导体。在n型氮化物半导体层和n型电极之间形成n型欧姆接触层，并且具有形成在第一层上的第一层材料In和形成在第一层上的第二层和含有W的材料。氮化物半导体发光器件具有热稳定性和优异的电热特性而不进行热处理。

4. 发明申请

US20090159920A1 Nitride semiconductor light emitting device and manufacturing method of the same 有权
标题翻译：氮化物半导体发光器件及其制造方法相同
公开(公告)号：US20090159920A1
公开(公告)日：2009-06-25
申请号：US12216568
申请日：2008-07-08
申请人： Hyun Soo Kim , Joon Seop Kwak , Ki Man Kang , Jin Hyun Lee , Cheol Soo Sone , Yu Seung Kim
发明人： Hyun Soo Kim , Joon Seop Kwak , Ki Man Kang , Jin Hyun Lee , Cheol Soo Sone , Yu Seung Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/0095 , H01L33/32 , H01L33/40
摘要： There is provided a nitride semiconductor light emitting device including: a light emitting structure including n-type and p-type nitride semiconductor layers and an active layer disposed therebetween; n- and p-electrodes electrically connected to the n-type and p-type nitride semiconductor layers, respectively; and an n-type ohmic contact layer disposed between the n-type nitride semiconductor layer and the n-electrode and including a first layer and a second layer, the first layer formed of an In-containing material, and the second layer disposed on the first layer and formed of a transparent conductive oxide. The nitride semiconductor light emitting device including the n-electrode exhibits high light transmittance and superior electrical characteristics. Further, the nitride semiconductor light emitting device can be manufactured by an optimal method to ensure superb optical and electrical characteristics.
摘要翻译：提供了一种氮化物半导体发光器件，包括：包括n型和p型氮化物半导体层的发光结构和设置在其间的有源层; 分别与n型和p型氮化物半导体层电连接的n型和p型电极; 以及设置在n型氮化物半导体层和n电极之间并且包括第一层和第二层的n型欧姆接触层，第一层由含In材料形成，第二层设置在第二层上第一层并由透明导电氧化物形成。包括n电极的氮化物半导体发光器件具有高透光率和优异的电特性。此外，可以通过最佳方法制造氮化物半导体发光器件，以确保极好的光学和电气特性。

5. 发明授权

US07968893B2 Semiconductor light emitting device and method of manufacturing the same 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07968893B2
公开(公告)日：2011-06-28
申请号：US12210472
申请日：2008-09-15
申请人： Sang Yeob Song , Jin Hyun Lee , Yu Seung Kim , Kwang Ki Choi , Pun Jae Choi , Hyun Soo Kim , Sang Bum Lee
发明人： Sang Yeob Song , Jin Hyun Lee , Yu Seung Kim , Kwang Ki Choi , Pun Jae Choi , Hyun Soo Kim , Sang Bum Lee
IPC分类号： H01L31/0256 , H01L33/00 , H01L21/00
CPC分类号： H01L33/40 , H01L33/32
摘要： Disclosed are a semiconductor light emitting device, which can improve characteristics of the semiconductor light emitting device such as a forward voltage characteristic and a turn-on voltage characteristic, increase light emission efficiency by lowering an input voltage, and increase reliability of the semiconductor light emitting device by a low-voltage operation, and a method of manufacturing the same. The semiconductor light emitting device includes: an n-type GaN semiconductor layer; an active layer formed on a gallium face of the n-type GaN semiconductor layer; a p-type semiconductor layer formed on the active layer; and an n-type electrode formed on a nitrogen face of the n-type GaN semiconductor layer and including a lanthanum (La)-nickel (Ni) alloy.
摘要翻译：公开了一种半导体发光器件，其能够提高半导体发光器件的特性，例如正向电压特性和导通电压特性，通过降低输入电压来提高发光效率，并提高半导体发光器件的可靠性器件的低压工作及其制造方法。半导体发光器件包括：n型GaN半导体层; 形成在所述n型GaN半导体层的镓面上的有源层; 形成在有源层上的p型半导体层; 以及形成在n型GaN半导体层的氮面上并包含镧（La） - 镍（Ni）合金的n型电极。

6. 发明授权

US08963175B2 Light emitting device and method of manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08963175B2
公开(公告)日：2015-02-24
申请号：US12266300
申请日：2008-11-06
申请人： Grigory Onushkin , Jin Hyun Lee , Myong Soo Cho , Pun Jae Choi
发明人： Grigory Onushkin , Jin Hyun Lee , Myong Soo Cho , Pun Jae Choi
IPC分类号： H01L33/36 , H01L27/15 , H01L33/38 , H01L33/08 , H01L33/20
CPC分类号： H01L27/156 , H01L33/08 , H01L33/20 , H01L33/385
摘要： Provided are a light emitting device and a method of manufacturing the same. The light emitting device includes each of first and second semiconductor stacked structures including first and second conductive type semiconductor layers and an active layer, first and second contacts on tops and bottoms of the first and second semiconductor stacked structures to be connected to the first and second conductive type semiconductor layers, a substrate structure including first and second sides, a first insulation layer on an area where no second contact is formed among a surface of the first and second semiconductor stacked layers, first and second conductive layers connected to the second contacts of the first and second semiconductor stacked structures, first and second wiring layers on the first side of the substrate structure, and first and second external connection terminals connected to the first and second contacts of the first semiconductor stacked structure.
摘要翻译：提供一种发光器件及其制造方法。发光器件包括第一和第二半导体层叠结构中的每一个，包括第一和第二导电类型半导体层和有源层，第一和第二半导体堆叠结构的顶部和底部上的第一和第二触点将被连接到第一和第二导电型半导体层，包括第一和第二侧的衬底结构，在第一和第二半导体层叠层的表面之间不形成第二接触的区域上的第一绝缘层，与第二和第二侧连接的第一和第二导电层第一和第二半导体层叠结构，在基板结构的第一侧上的第一和第二布线层，以及连接到第一半导体堆叠结构的第一和第二触点的第一和第二外部连接端子。

7. 发明授权

US08624276B2 Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same 有权
标题翻译：半导体发光器件及其制造方法以及使用其的半导体发光器件封装
公开(公告)号：US08624276B2
公开(公告)日：2014-01-07
申请号：US13568553
申请日：2012-08-07
申请人： Pun Jae Choi , Jin Hyun Lee , Ki Yeol Park , Myong Soo Cho
发明人： Pun Jae Choi , Jin Hyun Lee , Ki Yeol Park , Myong Soo Cho
IPC分类号： H01L29/20
CPC分类号： H01L33/38 , H01L24/32 , H01L24/48 , H01L24/73 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/46 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/00014 , H01L2224/45099 , H01L2924/00012 , H01L2924/00
摘要： There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.
摘要翻译：提供了一种半导体发光器件及其制造方法，以及使用该半导体发光器件的半导体发光器件封装。一种具有第一导电类型半导体层，有源层，第二导电类型半导体层，第二电极层和绝缘层，顺序层压的第一电极层和导电基板的半导体发光器件，其中第二电极层在第二电极层和第二导电类型半导体层之间的界面处具有暴露区域，并且第一电极层包括电连接到第一导电类型半导体层的至少一个接触孔，与第二导电类型半导体层电绝缘和有源层，并且从第一电极层的一个表面延伸到第一导电类型半导体层的至少一部分。

8. 发明申请

US20120299042A1 SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE USING THE SAME 有权
标题翻译：半导体发光器件，其制造方法和使用该半导体发光器件的半导体发光器件封装
公开(公告)号：US20120299042A1
公开(公告)日：2012-11-29
申请号：US13568553
申请日：2012-08-07
申请人： Pun Jae Choi , Jin Hyun Lee , Ki Yeol Park , Myong Soo Cho
发明人： Pun Jae Choi , Jin Hyun Lee , Ki Yeol Park , Myong Soo Cho
IPC分类号： H01L33/36 , H01L33/62 , H01L33/40
CPC分类号： H01L33/38 , H01L24/32 , H01L24/48 , H01L24/73 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/46 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/00014 , H01L2224/45099 , H01L2924/00012 , H01L2924/00
摘要： There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.
摘要翻译：提供了一种半导体发光器件及其制造方法，以及使用该半导体发光器件的半导体发光器件封装。一种具有第一导电类型半导体层，有源层，第二导电类型半导体层，第二电极层和绝缘层，顺序层压的第一电极层和导电基板的半导体发光器件，其中第二电极层在第二电极层和第二导电类型半导体层之间的界面处具有暴露区域，并且第一电极层包括电连接到第一导电类型半导体层的至少一个接触孔，与第二导电类型半导体层电绝缘和有源层，并且从第一电极层的一个表面延伸到第一导电类型半导体层的至少一部分。

9. 发明授权

US08063407B2 Light emitting device and package having the same for maximizing light emitting area 有权
标题翻译：具有相同的用于使发光面积最大化的发光器件和封装
公开(公告)号：US08063407B2
公开(公告)日：2011-11-22
申请号：US12756824
申请日：2010-04-08
申请人： Pun Jae Choi , Jin Hyun Lee , Si Hyuk Lee , Seon Young Myoung , Ki Yeol Park
发明人： Pun Jae Choi , Jin Hyun Lee , Si Hyuk Lee , Seon Young Myoung , Ki Yeol Park
IPC分类号： H01L33/62
CPC分类号： H01L33/382 , H01L33/0079 , H01L33/08 , H01L33/62 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73265 , H01L2924/01079 , H01L2924/00014 , H01L2924/00
摘要： There is provided a light emitting device that can minimize reflection or absorption of emitted light, maximize luminous efficiency with the maximum light emitting area, enable uniform current spreading with a small area electrode, and enable mass production at low cost with high reliability and high quality. A light emitting device according to an aspect of the invention includes a light emitting lamination including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer, and a conductive substrate at one surface thereof. Here, the light emitting device includes a barrier unit separating the light emitting lamination into a plurality of light emitting regions, a first electrode structure, and a second electrode structure. The first electrode structure includes a bonding unit, contact holes, and a wiring unit connecting the bonding unit to the contact holes.
摘要翻译：提供一种发光装置，其能够使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，实现与小面积电极的均匀电流扩散，并且以低成本，高可靠性和高质量实现批量生产。根据本发明的一个方面的发光器件包括在其一个表面上包括第一导电类型半导体层，第二导电类型半导体层和有源层的发光层叠体和导电性基板。这里，发光器件包括将发光层压分离成多个发光区域的阻挡单元，第一电极结构和第二电极结构。第一电极结构包括接合单元，接触孔和将接合单元连接到接触孔的接线单元。

10. 发明授权

US07884377B2 Light emitting device, method of manufacturing the same and monolithic light emitting diode array 有权
标题翻译：发光器件及其制造方法和单片发光二极管阵列
公开(公告)号：US07884377B2
公开(公告)日：2011-02-08
申请号：US12725970
申请日：2010-03-17
申请人： Grigory Onushkin , Jin Hyun Lee , Myong Soo Cho , Pun Jae Choi
发明人： Grigory Onushkin , Jin Hyun Lee , Myong Soo Cho , Pun Jae Choi
IPC分类号： H01L27/15 , H01L31/12 , H01L33/00
CPC分类号： H01L27/156 , H01L33/0079 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A light emitting device including: at least one light emitting stack including first and second conductivity type semiconductor layers and an active layer disposed there between, the light emitting stack having first and second surfaces and side surfaces interposed between the first and second surfaces; first and second contacts formed on the first and second surface of the light emitting stack, respectively; a first insulating layer formed on the second surface and the side surfaces of the light emitting stack; a conductive layer connected to the second contact and extended along one of the side surfaces of the light emitting stack to have an extension portion adjacent to the first surface; and a substrate structure formed to surround the side surfaces and the second surface of the light emitting stack.
摘要翻译：一种发光器件，包括：包括第一和第二导电类型半导体层的至少一个发光堆叠和设置在其间的有源层，所述发光叠层具有插入在所述第一表面和所述第二表面之间的第一表面和第二表面以及侧表面; 分别形成在发光堆叠的第一和第二表面上的第一和第二触点; 形成在所述发光叠层的所述第二表面和所述侧表面上的第一绝缘层; 导电层，其连接到所述第二接触件并沿所述发光叠层的一个侧表面延伸，以具有与所述第一表面相邻的延伸部分; 以及形成为围绕发光叠层的侧表面和第二表面的衬底结构。

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