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1. 发明授权

US08372672B2 Nitride semiconductor light emitting device and method of manufacturing the same 失效
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US08372672B2
公开(公告)日：2013-02-12
申请号：US12209644
申请日：2008-09-12
申请人： Hyun Soo Kim , Joon Seop Kwak , Ki Man Kang , Jin Hyun Lee , Yu Seung Kim , Cheol Soo Sone
发明人： Hyun Soo Kim , Joon Seop Kwak , Ki Man Kang , Jin Hyun Lee , Yu Seung Kim , Cheol Soo Sone
IPC分类号： H01L21/00
CPC分类号： H01L33/641 , H01L33/14 , H01L33/32
摘要： A nitride semiconductor light emitting device includes a light emitting structure having n-type and p-type nitride semiconductor layers and an active layer formed therebetween. N-type and p-type electrodes are electrically connected to the n-type and p-type nitride semiconductors, respectively. An n-type ohmic contact layer is formed between the n-type nitride semiconductor layer and the n-type electrode and has a first layer of a material In and a second layer formed on the first layer and of a material containing W. The nitride semiconductor light emitting device has thermal stability and excellent electrical characteristics without heat treatment.
摘要翻译：氮化物半导体发光器件包括具有n型和p型氮化物半导体层的发光结构和在它们之间形成的有源层。 N型和p型电极分别电连接到n型和p型氮化物半导体。在n型氮化物半导体层和n型电极之间形成n型欧姆接触层，并且具有形成在第一层上的第一层材料In和形成在第一层上的第二层和含有W的材料。氮化物半导体发光器件具有热稳定性和优异的电热特性而不进行热处理。

2. 发明申请

US20090159920A1 Nitride semiconductor light emitting device and manufacturing method of the same 有权
标题翻译：氮化物半导体发光器件及其制造方法相同
公开(公告)号：US20090159920A1
公开(公告)日：2009-06-25
申请号：US12216568
申请日：2008-07-08
申请人： Hyun Soo Kim , Joon Seop Kwak , Ki Man Kang , Jin Hyun Lee , Cheol Soo Sone , Yu Seung Kim
发明人： Hyun Soo Kim , Joon Seop Kwak , Ki Man Kang , Jin Hyun Lee , Cheol Soo Sone , Yu Seung Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/0095 , H01L33/32 , H01L33/40
摘要： There is provided a nitride semiconductor light emitting device including: a light emitting structure including n-type and p-type nitride semiconductor layers and an active layer disposed therebetween; n- and p-electrodes electrically connected to the n-type and p-type nitride semiconductor layers, respectively; and an n-type ohmic contact layer disposed between the n-type nitride semiconductor layer and the n-electrode and including a first layer and a second layer, the first layer formed of an In-containing material, and the second layer disposed on the first layer and formed of a transparent conductive oxide. The nitride semiconductor light emitting device including the n-electrode exhibits high light transmittance and superior electrical characteristics. Further, the nitride semiconductor light emitting device can be manufactured by an optimal method to ensure superb optical and electrical characteristics.
摘要翻译：提供了一种氮化物半导体发光器件，包括：包括n型和p型氮化物半导体层的发光结构和设置在其间的有源层; 分别与n型和p型氮化物半导体层电连接的n型和p型电极; 以及设置在n型氮化物半导体层和n电极之间并且包括第一层和第二层的n型欧姆接触层，第一层由含In材料形成，第二层设置在第二层上第一层并由透明导电氧化物形成。包括n电极的氮化物半导体发光器件具有高透光率和优异的电特性。此外，可以通过最佳方法制造氮化物半导体发光器件，以确保极好的光学和电气特性。

3. 发明授权

US07928467B2 Nitride semiconductor light emitting device and manufacturing method of the same 有权
标题翻译：氮化物半导体发光器件及其制造方法相同
公开(公告)号：US07928467B2
公开(公告)日：2011-04-19
申请号：US12216568
申请日：2008-07-08
申请人： Hyun Soo Kim , Joon Seop Kwak , Ki Man Kang , Jin Hyun Lee , Cheol Soo Sone , Yu Seung Kim
发明人： Hyun Soo Kim , Joon Seop Kwak , Ki Man Kang , Jin Hyun Lee , Cheol Soo Sone , Yu Seung Kim
IPC分类号： H01L33/00 , H01L33/42
CPC分类号： H01L33/42 , H01L33/0095 , H01L33/32 , H01L33/40
摘要： There is provided a nitride semiconductor light emitting device including: a light emitting structure including n-type and p-type nitride semiconductor layers and an active layer disposed therebetween; n- and p-electrodes electrically connected to the n-type and p-type nitride semiconductor layers, respectively; and an n-type ohmic contact layer disposed between the n-type nitride semiconductor layer and the n-electrode and including a first layer and a second layer, the first layer formed of an In-containing material, and the second layer disposed on the first layer and formed of a transparent conductive oxide. The nitride semiconductor light emitting device including the n-electrode exhibits high light transmittance and superior electrical characteristics. Further, the nitride semiconductor light emitting device can be manufactured by an optimal method to ensure superb optical and electrical characteristics.
摘要翻译：提供了一种氮化物半导体发光器件，包括：包括n型和p型氮化物半导体层的发光结构和设置在其间的有源层; 分别与n型和p型氮化物半导体层电连接的n型和p型电极; 以及设置在n型氮化物半导体层和n电极之间并且包括第一层和第二层的n型欧姆接触层，第一层由含In材料形成，第二层设置在第二层上第一层并由透明导电氧化物形成。包括n电极的氮化物半导体发光器件具有高透光率和优异的电特性。此外，可以通过最佳方法制造氮化物半导体发光器件，以确保极好的光学和电气特性。

4. 发明申请

US20090159922A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20090159922A1
公开(公告)日：2009-06-25
申请号：US12209644
申请日：2008-09-12
申请人： Hyun Soo KIM , Joon Seop Kwak , Ki Man Kang , Jin Hyun Lee , Yu Seung Kim , Cheol Soo Sone
发明人： Hyun Soo KIM , Joon Seop Kwak , Ki Man Kang , Jin Hyun Lee , Yu Seung Kim , Cheol Soo Sone
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/641 , H01L33/14 , H01L33/32
摘要： There is provided a nitride semiconductor light emitting device including: a light emitting structure having n-type and p-type nitride semiconductor layers and an active layer formed therebetween; n-type and p-type electrodes electrically connected to the n-type and p-type nitride semiconductors, respectively; and an n-type ohmic contact layer formed between the n-type nitride semiconductor layer and the n-type electrode and having a first layer formed of a material containing In and a second layer formed on the first layer and formed of a material containing W.According to an aspect of the invention, there is provided a nitride semiconductor light emitting device that has an n-type electrode having thermal stability and excellent electrical characteristics without heat treatment.According to another aspect of the invention, there is provided a method of manufacturing a nitride semiconductor light emitting device optimized to obtain the excellent thermal and electrical characteristics.
摘要翻译：提供一种氮化物半导体发光器件，包括：具有n型和p型氮化物半导体层的发光结构和在其间形成的有源层; 分别与n型和p型氮化物半导体电连接的n型和p型电极; 以及形成在n型氮化物半导体层和n型电极之间的n型欧姆接触层，并且具有由含有In的材料形成的第一层和形成在第一层上的由包含W的材料形成的第二层根据本发明的一个方面，提供一种氮化物半导体发光器件，其具有不具有热稳定性的热稳定性和优异的电特性的n型电极。根据本发明的另一方面，提供了一种制造优化以获得优异的热和电特性的氮化物半导体发光器件的方法。

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