专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20120080059A1 ETCHING, CLEANING AND DRYING METHODS USING SUPERCRITICAL FLUID AND CHAMBER SYSTEMS USING THESE METHODS 有权
标题翻译：使用这些方法的超临界流体和室系统的蚀刻，清洁和干燥方法
公开(公告)号：US20120080059A1
公开(公告)日：2012-04-05
申请号：US13326965
申请日：2011-12-15
申请人： Hyo-san Lee , Chang-Ki Hong , Kun-Tack Lee , Woo-Gwan Shim , Jeong-Nam Han , Jung-Min Oh , Kwon-Taek Lim , Ha-Soo Hwang , Haldural Yuvaraj , Jae-Mok Jung
发明人： Hyo-san Lee , Chang-Ki Hong , Kun-Tack Lee , Woo-Gwan Shim , Jeong-Nam Han , Jung-Min Oh , Kwon-Taek Lim , Ha-Soo Hwang , Haldural Yuvaraj , Jae-Mok Jung
IPC分类号： B08B3/08
CPC分类号： H01L21/02101 , H01L21/31111 , H01L21/67051 , H01L21/6708 , H01L27/10852 , Y10S134/902
摘要： Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.
摘要翻译：本文提供了使用超临界流体的蚀刻，清洁和干燥方法以及用于进行该临界流体的室系统。蚀刻方法包括使用其中溶解蚀刻剂的超临界二氧化碳蚀刻材料层，以及使用超临界二氧化碳除去由材料层和蚀刻化学品之间的反应产生的蚀刻副产物，其中清洁化学品溶解还提供了制造半导体器件的方法。

2. 发明授权

US08084367B2 Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods 有权
标题翻译：使用这些方法使用超临界流体和室系统的蚀刻，清洁和干燥方法
公开(公告)号：US08084367B2
公开(公告)日：2011-12-27
申请号：US11752834
申请日：2007-05-23
申请人： Hyo-san Lee , Chang-Ki Hong , Kun-Tack Lee , Woo-Gwan Shim , Jeong-Nam Han , Jung-Min Oh , Kwon-Taek Lim , Ha-Soo Hwang , Haldorai Yuvaraj , Jae-Mok Jung
发明人： Hyo-san Lee , Chang-Ki Hong , Kun-Tack Lee , Woo-Gwan Shim , Jeong-Nam Han , Jung-Min Oh , Kwon-Taek Lim , Ha-Soo Hwang , Haldorai Yuvaraj , Jae-Mok Jung
IPC分类号： H01L21/302
CPC分类号： H01L21/02101 , H01L21/31111 , H01L21/67051 , H01L21/6708 , H01L27/10852 , Y10S134/902
摘要： Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.
摘要翻译：本文提供了使用超临界流体的蚀刻，清洁和干燥方法以及用于进行该临界流体的室系统。蚀刻方法包括使用其中溶解蚀刻剂的超临界二氧化碳蚀刻材料层，以及使用超临界二氧化碳除去由材料层和蚀刻化学品之间的反应产生的蚀刻副产物，其中清洁化学品溶解还提供了制造半导体器件的方法。

3. 发明授权

US08790470B2 Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods 有权
标题翻译：使用这些方法使用超临界流体和室系统的蚀刻，清洁和干燥方法
公开(公告)号：US08790470B2
公开(公告)日：2014-07-29
申请号：US13326940
申请日：2011-12-15
申请人： Hyo-san Lee , Chang-Ki Hong , Kun-Tack Lee , Woo-Gwan Shim , Jeong-Nam Han , Jung-Min Oh , Kwon-Taek Lim , Ha-Soo Hwang , Haldorai Yuvaraj , Jae-Mok Jung
发明人： Hyo-san Lee , Chang-Ki Hong , Kun-Tack Lee , Woo-Gwan Shim , Jeong-Nam Han , Jung-Min Oh , Kwon-Taek Lim , Ha-Soo Hwang , Haldorai Yuvaraj , Jae-Mok Jung
IPC分类号： B08B3/00 , H01L21/67 , H01L21/02 , H01L21/311 , H01L27/108
CPC分类号： H01L21/02101 , H01L21/31111 , H01L21/67051 , H01L21/6708 , H01L27/10852 , Y10S134/902
摘要： Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.
摘要翻译：本文提供了使用超临界流体的蚀刻，清洁和干燥方法以及用于进行该临界流体的室系统。蚀刻方法包括使用其中溶解蚀刻剂的超临界二氧化碳蚀刻材料层，以及使用超临界二氧化碳除去由材料层和蚀刻化学品之间的反应产生的蚀刻副产物，其中清洁化学品溶解还提供了制造半导体器件的方法。

4. 发明授权

US08585917B2 Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods 有权
标题翻译：使用这些方法使用超临界流体和室系统的蚀刻，清洁和干燥方法
公开(公告)号：US08585917B2
公开(公告)日：2013-11-19
申请号：US13326965
申请日：2011-12-15
申请人： Hyo-san Lee , Chang-Ki Hong , Kun-Tack Lee , Woo-Gwan Shim , Jeong-Nam Han , Jung-Min Oh , Kwon-Taek Lim , Ha-Soo Hwang , Haldorai Yuvaraj , Jae-Mok Jung
发明人： Hyo-san Lee , Chang-Ki Hong , Kun-Tack Lee , Woo-Gwan Shim , Jeong-Nam Han , Jung-Min Oh , Kwon-Taek Lim , Ha-Soo Hwang , Haldorai Yuvaraj , Jae-Mok Jung
IPC分类号： C03C15/00
CPC分类号： H01L21/02101 , H01L21/31111 , H01L21/67051 , H01L21/6708 , H01L27/10852 , Y10S134/902
摘要： Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.
摘要翻译：本文提供了使用超临界流体的蚀刻，清洁和干燥方法以及用于进行该临界流体的室系统。蚀刻方法包括使用其中溶解蚀刻剂的超临界二氧化碳蚀刻材料层，以及使用超临界二氧化碳除去由材料层和蚀刻化学品之间的反应产生的蚀刻副产物，其中清洁化学品溶解还提供了制造半导体器件的方法。

5. 发明申请

US20120085495A1 ETCHING, CLEANING AND DRYING METHODS USING SUPERCRITICAL FLUID AND CHAMBER SYSTEMS USING THESE METHODS 有权
公开(公告)号：US20120085495A1
公开(公告)日：2012-04-12
申请号：US13326940
申请日：2011-12-15
申请人： Hyo-San Lee , Chang-Ki Hong , Kun-Tack Lee , Woo-Gwan Shim , Jeong-Nam Han , Jung-Min Oh , Kwon-Tack Lim , Ha-Soo Hwang , Haldori Vuvaraj , Jae-Monk Jung
发明人： Hyo-San Lee , Chang-Ki Hong , Kun-Tack Lee , Woo-Gwan Shim , Jeong-Nam Han , Jung-Min Oh , Kwon-Tack Lim , Ha-Soo Hwang , Haldori Vuvaraj , Jae-Monk Jung
IPC分类号： C23F1/08 , B08B3/00
CPC分类号： H01L21/02101 , H01L21/31111 , H01L21/67051 , H01L21/6708 , H01L27/10852 , Y10S134/902
摘要： Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.

6. 发明申请

US20070293054A1 ETCHING, CLEANING AND DRYING METHODS USING SUPERCRITICAL FLUID AND CHAMBER SYSTEMS USING THESE METHODS 有权
标题翻译：使用这些方法的超临界流体和室系统的蚀刻，清洁和干燥方法
公开(公告)号：US20070293054A1
公开(公告)日：2007-12-20
申请号：US11752834
申请日：2007-05-23
申请人： Hyo-San Lee , Chang-Ki Hong , Kun-Tack Lee , Woo-Gwan Shim , Jeong-Nam Han
发明人： Hyo-San Lee , Chang-Ki Hong , Kun-Tack Lee , Woo-Gwan Shim , Jeong-Nam Han
IPC分类号： H01L21/306 , H01L21/302
CPC分类号： H01L21/02101 , H01L21/31111 , H01L21/67051 , H01L21/6708 , H01L27/10852 , Y10S134/902
摘要： Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.
摘要翻译：本文提供了使用超临界流体的蚀刻，清洁和干燥方法以及用于进行该临界流体的室系统。蚀刻方法包括使用其中溶解蚀刻剂的超临界二氧化碳蚀刻材料层，以及使用超临界二氧化碳除去由材料层和蚀刻化学品之间的反应产生的蚀刻副产物，其中清洁化学品溶解还提供了制造半导体器件的方法。

7. 发明授权

US07498217B2 Methods of manufacturing semiconductor memory devices with unit cells having charge trapping layers 失效
标题翻译：制造具有电荷捕获层的单元电池的半导体存储器件的方法
公开(公告)号：US07498217B2
公开(公告)日：2009-03-03
申请号：US11746761
申请日：2007-05-10
申请人： Jung-Min Oh , Jeong-Nam Han , Chang-Ki Hong , Kun-Tack Lee , Dae-Hyuk Kang , Woo-Gwan Shim , Jong-Won Lee
发明人： Jung-Min Oh , Jeong-Nam Han , Chang-Ki Hong , Kun-Tack Lee , Dae-Hyuk Kang , Woo-Gwan Shim , Jong-Won Lee
IPC分类号： H01L21/8238 , H01L21/8242 , H01L21/336
CPC分类号： H01L27/115 , H01L21/76229 , H01L27/11568
摘要： In a method of manufacturing a semiconductor device such as a SONOS type semiconductor device, a trench is formed on a substrate. An isolation layer protruding from the substrate is formed to fill the trench. After a first layer is formed on the substrate, a preliminary second layer pattern is formed on the first layer. The preliminary second layer pattern has an upper face substantially lower than or substantially equal to an upper face of the isolation layer. A third layer is formed on the preliminary second layer and the isolation layer. A fourth layer is formed on the third layer. The fourth layer, the third layer, the preliminary second layer pattern and the first layer are partially etched to form a gate structure on the substrate. Source/drain regions are formed at portions of the substrate adjacent to the gate structure.
摘要翻译：在制造诸如SONOS型半导体器件的半导体器件的方法中，在衬底上形成沟槽。形成从衬底突出的隔离层以填充沟槽。在基板上形成第一层之后，在第一层上形成预备的第二层图案。预备的第二层图案具有基本上低于或基本上等于隔离层的上表面的上表面。在初步第二层和隔离层上形成第三层。在第三层上形成第四层。部分蚀刻第四层，第三层，初步第二层图案和第一层，以在基板上形成栅极结构。源极/漏极区域形成在与栅极结构相邻的衬底的部分处。

8. 发明申请

US20070111432A1 Semiconductor device having capacitor and method of fabricating the same 有权
标题翻译：具有电容器的半导体器件及其制造方法
公开(公告)号：US20070111432A1
公开(公告)日：2007-05-17
申请号：US11593067
申请日：2006-11-06
申请人： Jung-Min Oh , Jeong-Nam Han , Chang-Ki Hong , Woo-Gwan Shim , Im-Soo Park
发明人： Jung-Min Oh , Jeong-Nam Han , Chang-Ki Hong , Woo-Gwan Shim , Im-Soo Park
IPC分类号： H01L21/8242
CPC分类号： H01L28/91 , H01L21/31116 , H01L27/10817 , H01L27/10852
摘要： A semiconductor device having a capacitor and a method of fabricating the same may be provided. A method of fabricating a semiconductor device may include forming an etch stop layer and a mold layer sequentially on a substrate, patterning the mold layer to form a mold electrode hole exposing a portion of the etch stop layer, etching selectively the exposed etch stop layer by an isotropic dry etching process to form a contact electrode hole through the etch stop layer to expose a portion of the substrate, forming a conductive layer on the substrate and removing the conductive layer on the mold layer on the mold layer to form a cylindrical bottom electrode in the mold and contact electrode holes. The isotropic dry etching process may utilize a process gas including main etching gas and selectivity adjusting gas. The selectivity adjusting gas may increase an etch rate of the etch stop layer by more than an etch rate of the mold layer by the isotropic wet etching process.
摘要翻译：可以提供具有电容器的半导体器件及其制造方法。制造半导体器件的方法可以包括在衬底上顺序地形成蚀刻停止层和模制层，图案化模具层以形成露出蚀刻停止层的一部分的模具电极孔，通过以下步骤选择性地蚀刻暴露的蚀刻停止层：各向同性干蚀刻工艺，以形成通过蚀刻停止层的接触电极孔，以露出衬底的一部分，在衬底上形成导电层，并去除模层上的模层上的导电层，形成圆柱形底电极在模具和接触电极孔中。各向同性干蚀刻工艺可以利用包括主蚀刻气体和选择性调节气体的工艺气体。选择性调节气体可以通过各向同性湿蚀刻工艺增加蚀刻停止层的蚀刻速率超过模具层的蚀刻速率。

9. 发明授权

US07985999B2 Semiconductor device having capacitor 失效
标题翻译：具有电容器的半导体器件
公开(公告)号：US07985999B2
公开(公告)日：2011-07-26
申请号：US12659724
申请日：2010-03-18
申请人： Jung-Min Oh , Jeong-Nam Han , Chang-Ki Hong , Woo-Gwan Shim , Im-Soo Park
发明人： Jung-Min Oh , Jeong-Nam Han , Chang-Ki Hong , Woo-Gwan Shim , Im-Soo Park
IPC分类号： H01L27/108
CPC分类号： H01L28/91 , H01L21/31116 , H01L27/10817 , H01L27/10852
摘要： A semiconductor device having a capacitor and a method of fabricating the same may be provided. A method of fabricating a semiconductor device may include forming an etch stop layer and a mold layer sequentially on a substrate, patterning the mold layer to form a mold electrode hole exposing a portion of the etch stop layer, etching selectively the exposed etch stop layer by an isotropic dry etching process to form a contact electrode hole through the etch stop layer to expose a portion of the substrate, forming a conductive layer on the substrate and removing the conductive layer on the mold layer on the mold layer to form a cylindrical bottom electrode in the mold and contact electrode holes. The isotropic dry etching process may utilize a process gas including main etching gas and selectivity adjusting gas. The selectivity adjusting gas may increase an etch rate of the etch stop layer by more than an etch rate of the mold layer by the isotropic wet etching process.
摘要翻译：可以提供具有电容器的半导体器件及其制造方法。制造半导体器件的方法可以包括在衬底上顺序地形成蚀刻停止层和模制层，图案化模具层以形成露出蚀刻停止层的一部分的模具电极孔，通过以下步骤选择性地蚀刻暴露的蚀刻停止层：各向同性干蚀刻工艺，以形成通过蚀刻停止层的接触电极孔，以露出衬底的一部分，在衬底上形成导电层，并去除模层上的模层上的导电层，形成圆柱形底电极在模具和接触电极孔中。各向同性干蚀刻工艺可以利用包括主蚀刻气体和选择性调节气体的工艺气体。选择性调节气体可以通过各向同性湿蚀刻工艺增加蚀刻停止层的蚀刻速率超过模具层的蚀刻速率。

10. 发明授权

US07820508B2 Semiconductor device having capacitor and method of fabricating the same 有权
公开(公告)号：US07820508B2
公开(公告)日：2010-10-26
申请号：US11593067
申请日：2006-11-06
申请人： Jung-Min Oh , Jeong-Nam Han , Chang-Ki Hong , Woo-Gwan Shim , Im-Soo Park
发明人： Jung-Min Oh , Jeong-Nam Han , Chang-Ki Hong , Woo-Gwan Shim , Im-Soo Park
IPC分类号： H01L21/8242
CPC分类号： H01L28/91 , H01L21/31116 , H01L27/10817 , H01L27/10852
摘要： A semiconductor device having a capacitor and a method of fabricating the same may be provided. A method of fabricating a semiconductor device may include forming an etch stop layer and a mold layer sequentially on a substrate, patterning the mold layer to form a mold electrode hole exposing a portion of the etch stop layer, etching selectively the exposed etch stop layer by an isotropic dry etching process to form a contact electrode hole through the etch stop layer to expose a portion of the substrate, forming a conductive layer on the substrate and removing the conductive layer on the mold layer on the mold layer to form a cylindrical bottom electrode in the mold and contact electrode holes. The isotropic dry etching process may utilize a process gas including main etching gas and selectivity adjusting gas. The selectivity adjusting gas may increase an etch rate of the etch stop layer by more than an etch rate of the mold layer by the isotropic wet etching process.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式