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1. 发明申请

US20070181151A1 System and method for cleaning chemistry and processing during thin film magnetic head wafer fabrication 失效
标题翻译：在薄膜磁头晶片制造过程中清洗化学和加工的系统和方法
公开(公告)号：US20070181151A1
公开(公告)日：2007-08-09
申请号：US11350643
申请日：2006-02-09
申请人： Hung-Chin Guthrie , Ming Jiang , Nick Lara , John Yang
发明人： Hung-Chin Guthrie , Ming Jiang , Nick Lara , John Yang
IPC分类号： C23G1/00 , B08B7/00 , B08B3/00
CPC分类号： C23G1/26 , G11B5/3163 , G11B5/3169 , Y10S134/902
摘要： A solution of ammonium citrate and benzotriazole (BTA) is used to clean thin film magnetic head wafers. When used with brushing, the solution is a highly efficient process for removing particles, such as those generated during chemical-mechanical polishing (CMP), without causing corrosion and roughness. This process may be used on all CMP layers in thin film magnetic head wafer fabrication.
摘要翻译：柠檬酸铵和苯并三唑（BTA）的溶液用于清洗薄膜磁头晶片。当与刷涂一起使用时，该溶液是用于去除颗粒的高效方法，例如在化学机械抛光（CMP）期间产生的颗粒，而不会引起腐蚀和粗糙度。该方法可用于薄膜磁头晶片制造中的所有CMP层。

2. 发明授权

US06984613B1 Post chemical mechanical polishing cleaning solution for 2.45T CoFeNi structures of thin film magnetic heads 失效
标题翻译：用于2.45T薄膜磁头的CoFeNi结构的化学机械抛光清洗溶液
公开(公告)号：US06984613B1
公开(公告)日：2006-01-10
申请号：US10931385
申请日：2004-08-31
申请人： Hung-Chin Guthrie , Ming Jiang , Nick Lara
发明人： Hung-Chin Guthrie , Ming Jiang , Nick Lara
IPC分类号： C11D17/00
CPC分类号： C11D3/0073 , C11D9/007 , C11D9/30 , C11D11/0047
摘要： The present invention is directed to methods for polishing and cleaning a wafer having CoFeNi structures within alumina fill to achieve corrosion-free, smooth, and planar surface. A preferred chemical mechanical polishing (CMP) method includes a CMP polishing compound including alumina abrasive particulates, 1H-Benzotriazole (BTA), and hydrogen peroxide (H2O2). A cleaning solution for CoFeNi structures in alumina fill of the present invention preferably includes 4-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, 5-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, hydrogenated 4-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, hydrogenated 5-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, sodium octanoate in a concentration range of from 5% to 10%, and water in a concentration range of from 65% to 95%. The cleaning solution is typically used with DI water to create an applied solution having a range of from 0.1% to 10% by volume of the cleaning solution.
摘要翻译：本发明涉及在氧化铝填充物内抛光和清洗具有CoFeNi结构的晶片以实现无腐蚀，平滑和平坦的表面的方法。优选的化学机械抛光（CMP）方法包括CMP抛光化合物，其包括氧化铝磨粒，1H-苯并三唑（BTA）和过氧化氢（H 2 O 2 O 2）。本发明的氧化铝填充物中的CoFeNi结构的清洗液优选含有浓度范围为1％〜5％的4-甲基-1H-苯并三唑，浓度范围为1％〜5％的5-甲基-1H-苯并三唑 5％的浓度范围为1％至5％的氢化的4-甲基-1H-苯并三唑，浓度范围为1％至5％的氢化的5-甲基-1H-苯并三唑，浓度范围为 5％至10％，浓度范围为65％至95％的水。清洁溶液通常与去离子水一起使用以产生具有0.1至10体积％范围的清洁溶液的施用溶液。

3. 发明授权

US07374621B2 System and method for cleaning chemistry and processing during thin film magnetic head wafer fabrication 失效
标题翻译：在薄膜磁头晶片制造过程中清洗化学和加工的系统和方法
公开(公告)号：US07374621B2
公开(公告)日：2008-05-20
申请号：US11350643
申请日：2006-02-09
申请人： Hung-Chin Guthrie , Ming Jiang , Nick Lara , John Jaekoyun Yang
发明人： Hung-Chin Guthrie , Ming Jiang , Nick Lara , John Jaekoyun Yang
IPC分类号： B08B7/04
CPC分类号： C23G1/26 , G11B5/3163 , G11B5/3169 , Y10S134/902
摘要： A solution of ammonium citrate and benzotriazole (BTA) is used to clean thin film magnetic head wafers. When used with brushing, the solution is a highly efficient process for removing particles, such as those generated during chemical-mechanical polishing (CMP), without causing corrosion and roughness. This process may be used on all CMP layers in thin film magnetic head wafer fabrication.
摘要翻译：柠檬酸铵和苯并三唑（BTA）的溶液用于清洗薄膜磁头晶片。当与刷涂一起使用时，该溶液是用于去除颗粒的高效方法，例如在化学机械抛光（CMP）期间产生的颗粒，而不会引起腐蚀和粗糙度。该方法可用于薄膜磁头晶片制造中的所有CMP层。

4. 发明申请

US20060042173A1 Chemical mechanical polishing process for 2.45T CoFeNi structures of thin film magnetic heads 失效
标题翻译： 2.45T CoFeNi薄膜磁头结构的化学机械抛光工艺
公开(公告)号：US20060042173A1
公开(公告)日：2006-03-02
申请号：US10931846
申请日：2004-08-31
申请人： Hung-Chin Guthrie , Ming Jiang , Nick Lara
发明人： Hung-Chin Guthrie , Ming Jiang , Nick Lara
IPC分类号： B24D3/02 , B24B7/30 , C09C1/68
CPC分类号： C09K3/1463 , C09G1/02
摘要： The present invention is directed to methods for polishing and cleaning a wafer having CoFeNi structures within alumina fill to achieve corrosion-free, smooth, and planar surface. A preferred chemical mechanical polishing (CMP) method includes a CMP polishing compound including alumina abrasive particulates, 1H-Benzotriazole (BTA), and hydrogen peroxide (H2O2) in a concentration working range of 4% to 12%. In a preferred embodiment the H2O2 concentration is approximately 6% and the pH is approximately 4.0 at polishing pressure 6 psi. A cleaning solution for CoFeNi structures in alumina fill of the present invention preferably includes 4-Methyl-1H-Benzotriazole, 5-Methyl-1H-Benzotriazole, hydrogenated 4-Methyl-1H-Benzotriazole, hydrogenated 5-Methyl-1H-Benzotriazole, sodium octanoate, and water.
摘要翻译：本发明涉及在氧化铝填充物内抛光和清洗具有CoFeNi结构的晶片以实现无腐蚀，平滑和平坦的表面的方法。优选的化学机械抛光（CMP）方法包括CMP抛光化合物，其包括氧化铝磨料颗粒，1H-苯并三唑（BTA）和过氧化氢（H 2 O 2 O 2）浓度范围为4％〜12％。在优选的实施方案中，在抛光压力6psi下，H 2 O 2 O 2浓度为约6％，pH为约4.0。本发明的氧化铝填充物中的CoFeNi结构的清洗液优选包括4-甲基-1H-苯并三唑，5-甲基-1H-苯并三唑，氢化的4-甲基-1H-苯并三唑，氢化的5-甲基-1H-苯并三唑，钠辛酸盐和水。

5. 发明授权

US07306638B2 Chemical mechanical polishing process for 2.45T CoFeNi structures of thin film magnetic heads 失效
标题翻译： 2.45T CoFeNi薄膜磁头结构的化学机械抛光工艺
公开(公告)号：US07306638B2
公开(公告)日：2007-12-11
申请号：US10931846
申请日：2004-08-31
申请人： Hung-Chin Guthrie , Ming Jiang , Nick Lara
发明人： Hung-Chin Guthrie , Ming Jiang , Nick Lara
IPC分类号： C09G1/02 , C09G1/04
CPC分类号： C09K3/1463 , C09G1/02
摘要： The present invention is directed to methods for polishing and cleaning a wafer having CoFeNi structures within alumina fill to achieve corrosion-free, smooth, and planar surface. A preferred chemical mechanical polishing (CMP) method includes a CMP polishing compound including alumina abrasive particulates, 1H-Benzotriazole (BTA), and hydrogen peroxide (H2O2) in a concentration working range of 4% to 12%. In a preferred embodiment the H2O2 concentration is approximately 6% and the pH is approximately 4.0 at polishing pressure 6 psi. A cleaning solution for CoFeNi structures in alumina fill of the present invention preferably includes 4-Methyl-1H-Benzotriazole, 5-Methyl-1H-Benzotriazole, hydrogenated 4-Methyl-1H-Benzotriazole, hydrogenated 5-Methyl-1H-Benzotriazole, sodium octanoate, and water.
摘要翻译：本发明涉及在氧化铝填充物内抛光和清洗具有CoFeNi结构的晶片以实现无腐蚀，平滑和平坦的表面的方法。优选的化学机械抛光（CMP）方法包括CMP抛光化合物，其包括氧化铝磨料颗粒，1H-苯并三唑（BTA）和过氧化氢（H 2 O 2 O 2）浓度范围为4％〜12％。在优选的实施方案中，在抛光压力6psi下，H 2 O 2 O 2浓度为约6％，pH为约4.0。本发明的氧化铝填充物中的CoFeNi结构的清洗液优选包括4-甲基-1H-苯并三唑，5-甲基-1H-苯并三唑，氢化的4-甲基-1H-苯并三唑，氢化的5-甲基-1H-苯并三唑，钠辛酸盐和水。

6. 发明申请

US20060154573A1 Gentle chemical mechanical polishing (CMP) liftoff process 失效
标题翻译：温和化学机械抛光（CMP）剥离工艺
公开(公告)号：US20060154573A1
公开(公告)日：2006-07-13
申请号：US11034340
申请日：2005-01-11
申请人： Jian-Huei Feng , Hung-Chin Guthrie , Ming Jiang , John Yang
发明人： Jian-Huei Feng , Hung-Chin Guthrie , Ming Jiang , John Yang
IPC分类号： B24B1/00
CPC分类号： B24B37/24 , B24B37/042 , B24B49/16
摘要： A method for chemical mechanical polishing (CMP) wafers having high aspect ratio surface topography. A wafer is positioned on a plate. A polishing pad is coupled to a platen. A polishing solution (e.g., slurry) is added between the polishing pad and the wafer. CMP is performed on the wafer by creating a relative movement between the polishing pad and the wafer. The polishing pad removes substantially all residual material from the channels. To accomplish this, the polishing pad has a compressibility of at least 5% at a polishing pressure of about 4 psi.
摘要翻译：一种具有高纵横比表面形貌的化学机械抛光（CMP）晶片的方法。晶片位于板上。抛光垫联接到压板。在抛光垫和晶片之间添加抛光溶液（例如浆料）。通过在抛光垫和晶片之间产生相对移动来在晶片上执行CMP。抛光垫基本上从通道中去除所有残留的材料。为了实现这一点，抛光垫在约4psi的抛光压力下具有至少5％的压缩率。

7. 发明申请

US20050127027A1 CMP for corrosion-free CoFe elements for magnetic heads 有权
标题翻译： CMP用于磁头的无腐蚀CoFe元件
公开(公告)号：US20050127027A1
公开(公告)日：2005-06-16
申请号：US10734361
申请日：2003-12-11
申请人： Christopher Bergevin , Hung-Chin Guthrie , Tom Harris , Ming Jiang , John Yang
发明人： Christopher Bergevin , Hung-Chin Guthrie , Tom Harris , Ming Jiang , John Yang
IPC分类号： B24B37/04 , B44C1/22 , C09K3/14 , G11B5/31
CPC分类号： G11B5/3163 , B24B37/044 , C09K3/1472
摘要： A method of manufacture of magnetic heads which include CoFe elements using CMP is presented. The method includes providing a slurry of Al2O3, adjusting the concentration of H2O2 in said slurry to within a range of 6-12% by volume and balancing mechanical polishing action. The balancing is done by adjusting the table speed of a mechanical polisher to within a range of 55-90 rpm, and adjusting polishing pressure to within a range of 5-7 psi. Also a magnetic head having elements made of CoFe material made by this method is disclosed.
摘要翻译：提出了使用CMP制造包括CoFe元素的磁头的制造方法。该方法包括提供Al 2 N 3 O 3的浆料，调节所述的二氧化钛的浓度浆料在6-12体积％的范围内，并平衡机械抛光作用。通过将机械抛光机的工作台速度调节到55-90rpm的范围内并且将抛光压力调节到5-7psi的范围内来进行平衡。还公开了一种具有由该方法制成的由CoFe材料制成的元件的磁头。

8. 发明申请

US20050189319A1 One step copper damascene CMP process and slurry 失效
标题翻译：一步铜镶嵌CMP工艺和浆料
公开(公告)号：US20050189319A1
公开(公告)日：2005-09-01
申请号：US10789777
申请日：2004-02-27
申请人： Hung-Chin Guthrie , Ming Jiang , John Yang
发明人： Hung-Chin Guthrie , Ming Jiang , John Yang
IPC分类号： B44C1/22 , C23F1/00 , C23F3/04 , G11B5/17 , G11B5/31 , H01L21/321
CPC分类号： H01L21/3212 , C23F3/04 , G11B5/17 , G11B5/3116 , G11B5/313 , G11B5/3163 , Y10T29/49041 , Y10T29/4906 , Y10T29/49064
摘要： A Chemical Mechanical Polish (CMP) process and slurry therefore slurry that is capable of removing NiFe, SiO2, Photoresist, Ta, alumina and Cu at substantially the same rate. The slurry is useful for obtaining a substantially planar surface of several materials while avoiding corrosion of Cu coil and NiFe structure.
摘要翻译：化学机械抛光（CMP）工艺和浆料，因此能够以基本相同的速率去除NiFe，SiO 2，光致抗蚀剂，Ta，氧化铝和Cu。该浆料可用于获得几种材料的基本平坦的表面，同时避免Cu线圈和NiFe结构的腐蚀。

9. 发明授权

US07881010B2 Process for self-aligned flare point and shield throat definition prior to main pole patterning 有权
标题翻译：在主极图案化之前，自对准耀斑和屏蔽喉定义的过程
公开(公告)号：US07881010B2
公开(公告)日：2011-02-01
申请号：US11956277
申请日：2007-12-13
申请人： Hung-Chin Guthrie , Ming Jiang , Edward Hin Pong Lee , Aron Pentek , Sue Siyang Zhang , Yi Zheng
发明人： Hung-Chin Guthrie , Ming Jiang , Edward Hin Pong Lee , Aron Pentek , Sue Siyang Zhang , Yi Zheng
IPC分类号： G11B5/187
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/3146 , G11B5/315
摘要： A method for manufacturing a magnetic write head having a write pole with a flared step feature that defines a secondary flare point. The method involves depositing a magnetic write pole material on a substrate and then depositing a magnetic material over the write pole material followed by a non-magnetic material. A first mask is formed having a front edge to define the location of the secondary flare point, and one or more material removal processes are used to remove portions of the magnetic layer and non-magnetic layer that are not protected by this first mask. The first mask is replaced by a second mask that is configured to define a write pole, and an ion milling is performed to define the write pole. Shadowing from the magnetic layer and non-magnetic layer form a flared secondary flare point.
摘要翻译：一种用于制造具有定义二次闪光点的具有扩口步骤特征的写极的磁写头的方法。该方法包括将磁性写入极材料沉积在衬底上，然后将磁性材料沉积在写入极材料上，随后是非磁性材料。形成第一掩模，其具有前边缘以限定次级火炬点的位置，并且使用一个或多个材料去除过程来去除未被该第一掩模保护的磁性层和非磁性层的部分。第一个掩模由配置为定义写入极的第二个掩模代替，并且执行离子铣削来定义写入极点。从磁性层和非磁性层的阴影形成扩张的次级耀斑点。

10. 发明授权

US07768743B2 Perpendicular magnetic recording write head with trailing shield having notch and throat height defined by nonmagnetic pad layer 有权
标题翻译：垂直磁记录写头，后挡板具有由非磁性垫层限定的凹口和喉部高度
公开(公告)号：US07768743B2
公开(公告)日：2010-08-03
申请号：US11747656
申请日：2007-05-11
申请人： Hung-Chin Guthrie , Ming Jiang , Changqing Shi
发明人： Hung-Chin Guthrie , Ming Jiang , Changqing Shi
IPC分类号： G11B5/127
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/315
摘要： A perpendicular magnetic recording write head supported on an air-bearing slider has a magnetic write pole (WP) with a WP end at the air-bearing surface (ABS) having a width generally equal to the data track width and a trailing shield (TS) with a TS end generally coplanar with the WP end. The TS has a first portion with a width at the TS end substantially wider than the width of the WP end and a TS notch (TSN) portion with a width at the TS end generally equal to the width of the WP end. The TS first portion has a height in a direction perpendicular to the ABS, and the TSN portion has a throat height (TH) in a direction perpendicular to the ABS that is less than the height of the TS first portion. A nonmagnetic gap layer separates the WP from the TSN portion and a nonmagnetic pad layer separates the WP from the TS first portion. The pad layer has a front edge generally parallel to and recessed from the ABS that defines the TH of the TSN portion, and a thickness that defines the length of the TSN portion in the along-the-track direction.
摘要翻译：支撑在空气轴承滑块上的垂直磁记录写头具有在空气轴承表面（ABS）上具有WP端的磁性写入极（WP），其宽度大体上等于数据磁道宽度和后屏蔽（TS ），其TS端通常与WP端共面。 TS具有第一部分，其宽度在TS端大大宽于WP端的宽度，TS陷口（TSN）部分的宽度在TS端大致等于WP端的宽度。 TS第一部分具有垂直于ABS的方向的高度，并且TSN部分在垂直于ABS的方向上具有小于TS第一部分的高度的喉部高度（TH）。非磁隙层将WP与TSN部分分开，非磁性垫层将WP与TS第一部分分离。衬垫层具有大致平行于ABS并且从ABS凹入的前边缘，其限定TSN部分的TH，以及限定沿着轨道方向的TSN部分的长度的厚度。

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