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    • 1. 发明申请
    • Speech restoration system and method for concealing packet losses
    • 用于隐藏分组丢失的语音恢复系统和方法
    • US20050010401A1
    • 2005-01-13
    • US10615268
    • 2003-07-07
    • Ho SungDae HwangMoon LeeKi LeeYoung ParkDae Youn
    • Ho SungDae HwangMoon LeeKi LeeYoung ParkDae Youn
    • G10L11/06G10L19/00G10L19/04
    • G10L19/005G10L19/04G10L25/93
    • Provided are a speech restoration system and method for concealing packet losses. The system includes a demultiplexer that demultiplexes an input bit stream and divides the input bit stream into several packets; a packet loss concealing unit that produces and outputs a linear spectrum pair (LSP) coefficient representing the vocal tract of voice and an excitation signal corresponding to a lost frame, when a packet loss occurs; and a speech restoring unit that synthesizes voice using the packets input from the demultiplexer, outputs the result as restored voice, and synthesizes voice corresponding to a lost packet using the LSP coefficient and the excitation signal input from the packet loss concealing unit and outputs the result as restored voice when the lost packet is detected, wherein the packet loss concealing unit repeats linear prediction coefficients (LPCs) of a last-received valid frame, produces a first excitation signal for the lost frame using a time scale modification (TSM) method, when the lost frame is voiceless, and produces a second excitation signal by re-estimating a gain parameter based on the first excitation signal, when the lost frame is voiced.
    • 提供了一种用于隐藏分组丢失的语音恢复系统和方法。 该系统包括解复用器,其对输入比特流进行解复用并将输入比特流分成若干分组; 分组丢失隐藏单元,当发生分组丢失时,产生并输出表示语音的声道的线性频谱对(LSP)系数和对应于丢失帧的激励信号; 以及语音恢复单元,其使用从解复用器输入的分组合成语音,将结果输出为恢复的语音,并且使用从分组丢失隐藏单元输入的LSP系数和激励信号来合成与丢失分组对应的语音,并输出结果 作为在检测到丢失分组时的恢复语音,其中分组丢失隐藏单元重复最后接收的有效帧的线性预测系数(LPC),使用时间缩放修改(TSM)方法产生丢失帧的第一激励信号, 当丢失的帧是无声的,并且当丢失的帧被发音时,通过基于第一激励信号重新估计增益参数来产生第二激励信号。
    • 3. 发明申请
    • Method of Depositing Thin Film
    • 沉积薄膜的方法
    • US20080044567A1
    • 2008-02-21
    • US11571547
    • 2005-12-14
    • Tae SeoYoung ParkKi LeeSahng Lee
    • Tae SeoYoung ParkKi LeeSahng Lee
    • C23C16/00
    • H01L21/76843H01L21/28556H01L21/76861
    • Disclosed is a method of depositing thin films, in which the thin films are continuously deposited into one chamber and 1-6 wafers are loaded into the chamber. In the method, a process gap between a shower head or a gas injection unit and a substrate is capable of being controlled. The method comprises (a) loading at least one substrate into the chamber, (b) depositing the Ti thin film onto the substrate, adjusted so that a first process gap is maintained, (c) moving a wafer block so that the first process gap is changed into a second process gap in order to control the process gap of the substrate upon which the Ti thin film is deposited, (d) depositing the TiN thin film onto the substrate, moved to set the second process gap, and (e) unloading the substrate upon which the Ti/TiN thin films are deposited. If it is possible to continuously deposit Ti/TiN thin films on 1-6 substrates in one chamber, it is possible to set only one chamber among 4 chambers in a PM period, thereby an operating ratio of a cluster tool can be significantly improved. When Ti/TiN is continuously deposited in one chamber, the time needed to move a substrate from a Ti chamber to a TiN chamber is reduced, thus treatment efficiency of the substrate per unit time is significantly increased.
    • 公开了一种沉积薄膜的方法,其中薄膜连续地沉积到一个室中,并且将1-6个晶片装入室中。 在该方法中,能够控制淋浴喷头或气体喷射单元与基板之间的处理间隙。 该方法包括:(a)将至少一个衬底装载到腔室中,(b)将Ti薄膜沉积到衬底上,进行调整,使得保持第一工艺间隙;(c)移动晶片块使得第一工艺间隙 改变为第二工艺间隙,以便控制沉积Ti薄膜的衬底的工艺间隙,(d)将TiN薄膜沉积到衬底上,移动以设定第二工艺间隙,(e) 卸载沉积有Ti / TiN薄膜的基板。 如果可以在一个室中的1-6个基板上连续沉积Ti / TiN薄膜,则可以在PM周期内在4个室中仅设置一个室,从而可以显着提高簇工具的运行比。 当在一个室中连续沉积Ti / TiN时,将衬底从Ti室移动到TiN室所需的时间减少,因此每单位时间衬底的处理效率显着提高。
    • 4. 发明申请
    • Method of depositing thin film on substrate using impulse ALD process
    • 使用脉冲ALD工艺在衬底上沉积薄膜的方法
    • US20060210712A1
    • 2006-09-21
    • US11377153
    • 2006-03-16
    • Young ParkSahng LeeKi LeeTae Seo
    • Young ParkSahng LeeKi LeeTae Seo
    • C23C16/00
    • C23C16/45527C23C16/45523
    • Provided is a method of depositing a thin film on a substrate using an impulse feeding process. The method includes performing a second reaction gas continuous feeding process of continuously feeding a second reaction gas into a chamber in which the substrate is installed, and performing a number of times, during the second reaction gas continuous feeding process, a process cycle including a first reaction gas feeding process of feeding a first reaction gas into the chamber and a first reaction gas purge process of purging the first reaction gas that is not adhered onto the substrate. The second reaction gas continuous feeding process includes a second reaction gas impulse process of feeding the second reaction gas at an impulse flow rate greater than a basic flow rate during the first reaction gas purge process.
    • 提供了使用脉冲进给工艺在基板上沉积薄膜的方法。 该方法包括进行将第二反应气体连续供给到其中安装基板的室中的第二反应气体连续进料过程,并且在第二反应气体连续进料过程期间进行多次,包括第一反应气体 将第一反应气体进料到反应室中的反应气体进料过程以及清洗未附着在基材上的第一反应气体的第一反应气体吹扫工序。 第二反应气体连续进料方法包括在第一反应气体净化过程中以大于碱性流速的脉冲流速供给第二反应气体的第二反应气体脉冲过程。