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1. 发明授权

US09577115B2 Semiconductor devices having air gaps 有权
标题翻译：具有气隙的半导体器件
公开(公告)号：US09577115B2
公开(公告)日：2017-02-21
申请号：US13195347
申请日：2011-08-01
申请人： Byung-Kyu Cho , Chang-Hyun Lee , Young-Woo Park
发明人： Byung-Kyu Cho , Chang-Hyun Lee , Young-Woo Park
IPC分类号： H01L21/70 , H01L29/788 , H01L21/764 , H01L27/115 , H01L29/423
CPC分类号： H01L29/7881 , H01L21/764 , H01L27/11521 , H01L29/42336
摘要： A semiconductor device has an isolation layer pattern, a plurality of gate structures, and a first insulation layer pattern. The isolation layer pattern is formed on a substrate and has a recess thereon. The gate structures are spaced apart from each other on the substrate and the isolation layer pattern. The first insulation layer pattern is formed on the substrate and covers the gate structures and an inner wall of the recess. The first insulation layer pattern has a first air gap therein.
摘要翻译：半导体器件具有隔离层图案，多个栅极结构和第一绝缘层图案。隔离层图案形成在基板上并且在其上具有凹部。栅极结构在衬底和隔离层图案上彼此间隔开。第一绝缘层图案形成在基板上并且覆盖该凹槽的栅极结构和内壁。第一绝缘层图案中具有第一气隙。

2. 发明授权

US09028350B2 Chain belt-type variable transmission 有权
标题翻译：链带型变速传动
公开(公告)号：US09028350B2
公开(公告)日：2015-05-12
申请号：US13976805
申请日：2011-12-28
申请人： Yoon Kyu Cho
发明人： Yoon Kyu Cho
IPC分类号： F16H55/00 , F16H9/24 , F16H55/54 , F16H63/06
CPC分类号： F16H9/24 , F16H37/0846 , F16H55/54 , F16H63/065 , F16H63/067
摘要： A chain belt-type continuously variable transmission in which ratchet-type chain belts are wound on driving and driven pulley devices, each of which has a variable diameter, in order to control the shift ratio. Driving belt supports are disposed in a driving pulley device so as to radially contract and expand. Driven belt supports are disposed in a driven pulley device so as to radially contract and expand. Teeth in the front portions of the driving belt supports and the driven belt supports and teeth in the rear portions of the driving belt supports and the driven belt supports are oriented in opposite directions. Front and rear ratchet gears formed on the driving belt supports and the front and rear ratchet gears formed on the driven belt supports are oriented in opposite directions and are arranged in alternating positions without being formed at corresponding positions in a line.
摘要翻译：链带式无级变速器，其中棘轮型链带缠绕在每个具有可变直径的驱动和从动带轮装置上，以便控制换档比。驱动带支撑件设置在驱动带轮装置中以便径向收缩和膨胀。驱动的皮带支撑件设置在从动皮带轮装置中以便径向收缩和扩张。驱动带支撑件的前部中的齿和从动带支撑件，并且驱动带支撑件的后部中的齿和从动带支撑件沿相反方向定向。形成在驱动带支架上的前棘轮和后棘轮，并且形成在从动带支撑件上的前棘轮和后棘轮形成在相反的方向上并且被布置在交替位置，而不形成在一行中的相应位置处。

3. 发明授权

US08830874B2 Method and apparatus for load balancing in cellular communication system 有权
标题翻译：蜂窝通信系统负载均衡的方法和装置
公开(公告)号：US08830874B2
公开(公告)日：2014-09-09
申请号：US13557600
申请日：2012-07-25
申请人： Young-Kyu Cho , Ki-Back Kim , Jin-Hyun Youn
发明人： Young-Kyu Cho , Ki-Back Kim , Jin-Hyun Youn
IPC分类号： H04L12/28 , H04W36/22 , H04L12/56 , H04W28/08
CPC分类号： H04W28/08 , H04L47/125 , H04W36/22
摘要： A method and an apparatus for load balancing a serving subcell providing a data service to one or more user equipments in a cellular communication system are provided. The method includes calculating a load metric by using a radio resource occupation rate of data traffic in one or more scheduling types except for a Best Effort (BE) scheduling type, determining whether the serving subcell is in an overload state by using the load metric, and triggering a load balancing algorithm when it is determined that the serving subcell is in the overload state. Accordingly, the load metric used for load balancing may be defined to have a value closer to an actual free load, and thus the load balancing may be efficiently performed.
摘要翻译：提供了一种用于将蜂窝通信系统中的一个或多个用户设备提供数据服务的服务子小区负载平衡的方法和装置。该方法包括：通过使用除了最佳努力（BE）调度类型之外的一种或多种调度类型中的数据业务的无线电资源占用率来计算负载度量，通过使用负载度量确定服务子小区是否处于过载状态，并且当确定服务子小区处于过载状态时触发负载平衡算法。因此，用于负载平衡的负载度量可以被定义为具有更接近实际空闲负载的值，因此可以有效地执行负载平衡。

4. 发明授权

US08809932B2 Semiconductor memory device, method of fabricating the same, and devices employing the semiconductor memory device 有权
标题翻译：半导体存储器件及其制造方法以及采用半导体存储器件的器件
公开(公告)号：US08809932B2
公开(公告)日：2014-08-19
申请号：US11822548
申请日：2007-07-06
申请人： Byung-Kyu Cho , Se-Hoon Lee , Kyu-Charn Park , Choong-Ho Lee
发明人： Byung-Kyu Cho , Se-Hoon Lee , Kyu-Charn Park , Choong-Ho Lee
IPC分类号： H01L29/788 , H01L27/115 , H01L21/28 , H01L29/66
CPC分类号： H01L21/28273 , H01L27/115 , H01L27/11521 , H01L29/66825
摘要： In one embodiment, the semiconductor memory device includes a semiconductor substrate having projecting portions, a tunnel insulation layer formed over at least one of the projecting semiconductor substrate portions, and a floating gate structure disposed over the tunnel insulation layer. An upper portion of the floating gate structure is wider than a lower portion of the floating gate structure, and the lower portion of the floating gate structure has a width less than a width of the tunnel insulating layer. First insulation layer portions are formed in the semiconductor substrate and project from the semiconductor substrate such that the floating gate structure is disposed between the projecting first insulation layer portions. A dielectric layer is formed over the first insulation layer portions and the floating gate structure, and a control gate is formed over the dielectric layer.
摘要翻译：在一个实施例中，半导体存储器件包括具有突出部分的半导体衬底，在至少一个突出半导体衬底部分上形成的隧道绝缘层，以及设置在隧道绝缘层上的浮动栅极结构。浮动栅极结构的上部比浮动栅极结构的下部宽，并且浮动栅极结构的下部具有小于隧道绝缘层的宽度的宽度。第一绝缘层部分形成在半导体衬底中并从半导体衬底突出，使得浮栅结构设置在突出的第一绝缘层部分之间。在第一绝缘层部分和浮动栅极结构之上形成电介质层，并且在电介质层上形成控制栅极。

5. 发明申请

US20140009298A1 Transmission System Using Dying Gasp 有权
标题翻译：传输系统使用死气
公开(公告)号：US20140009298A1
公开(公告)日：2014-01-09
申请号：US13933931
申请日：2013-07-02
申请人： Dong Il Song , Min-kyu Cho
发明人： Dong Il Song , Min-kyu Cho
IPC分类号： G08B21/18
CPC分类号： G08B21/185 , H04Q11/00 , H04Q11/0067 , H04Q2011/0081 , H04Q2213/13106 , H04Q2213/13166
摘要： An Ethernet-based transmission system using a dying gasp according to the present invention includes an SMPS for supplying power to an Ethernet-based lower level system, detecting a state of a power fault, and outputting a dying gasp alarm signal. A CPU receives the dying gasp alarm signal, and generates and transmits an alarm packet. A PHY chip receives the alarm packet, and uplinks the alarm packet so that the alarm packet is transferred to a higher level stage. An L3 switch receives the alarm packet and determines whether a power fault has occurred in the lower level system. Accordingly, the present invention applies a dying gasp to an Ethernet-based or EPON-based transmission system and is then capable of generating and transmitting an alarm packet so that when a power fault occurs, a device in a higher level network can rapidly determine the occurrence of the power fault.
摘要翻译：根据本发明的基于以太网的传输系统使用一种垂死喘气包括一个用于向基于以太网的较低级系统提供电力的SMPS，检测电力故障的状态，以及输出一个垂死的喘气报警信号。 CPU接收到死机报警信号，生成并发送报警数据包。 PHY芯片收到报警报文，上报报文报文，报警报文转发到较高级别的报文。 L3交换机接收报警数据包，并确定下层系统是否发生电源故障。因此，本发明对基于以太网或基于EPON的传输系统应用死机，然后能够产生和发送报警分组，使得当发生电力故障时，较高级网络中的设备可以快速地确定发生电源故障。

6. 发明授权

US08441062B2 Nonvolatile memory devices having memory cell transistors therein with lower bandgap source/drain regions 有权
标题翻译：具有其中具有较低带隙源极/漏极区域的存储单元晶体管的非易失性存储器件
公开(公告)号：US08441062B2
公开(公告)日：2013-05-14
申请号：US12974542
申请日：2010-12-21
申请人： Byung-kyu Cho , Kwang-soo Seol , Sung-hoi Hur , Jung-dal Choi
发明人： Byung-kyu Cho , Kwang-soo Seol , Sung-hoi Hur , Jung-dal Choi
IPC分类号： H01L29/772
CPC分类号： H01L27/11521 , H01L27/11524
摘要： Nonvolatile memory devices include a plurality of nonvolatile memory cell transistors having respective channel regions within a semiconductor layer formed of a first semiconductor material and respective source/drain regions formed of a second semiconductor material, which has a smaller bandgap relative to the first semiconductor material. The source/drain regions can form non-rectifying junctions with the channel regions. The source/drain regions may include germanium (e.g., Ge or SiGe regions), the semiconductor layer may be a P-type silicon layer and the source/drain regions of the plurality of nonvolatile memory cell transistors may be P-type germanium or P-type silicon germanium.
摘要翻译：非易失性存储器件包括多个非易失性存储单元晶体管，其在由第一半导体材料形成的半导体层内的相应沟道区和由第二半导体材料形成的相应的源极/漏极区相互相对于第一半导体材料具有较小的带隙。源极/漏极区域可以与沟道区域形成非整流结。源极/漏极区域可以包括锗（例如Ge或SiGe区域），半导体层可以是P型硅层，并且多个非易失性存储单元晶体管的源极/漏极区域可以是P型锗或P 型硅锗。

7. 发明申请

US20120202026A1 ROOF-GREENING SHEET 审中-公开
标题翻译：屋顶绿化板
公开(公告)号：US20120202026A1
公开(公告)日：2012-08-09
申请号：US13500161
申请日：2009-11-23
申请人： Sang-Keun Lee , Jong-Yong Lee , Il-Kyu Cho
发明人： Sang-Keun Lee , Jong-Yong Lee , Il-Kyu Cho
IPC分类号： E04D11/02 , B32B17/02 , B32B7/12 , B32B15/14
CPC分类号： E04D11/002 , A01G20/20 , B32B5/26 , B32B7/12 , B32B15/082 , B32B15/14 , B32B15/20 , B32B27/12 , B32B2250/40 , B32B2262/101 , B32B2419/06 , Y02A30/254 , Y02B80/32 , Y10T428/24942
摘要： Disclosed therein is a sheet for green roof that includes a copper or aluminum thin film or a nonwoven fabric having a predetermined thickness firmly laminated on both sides of a glass fabric having a predetermined area through an adhesive to prevent the root growth of plants and maximizes insulation from moisture, thermal insulation, and reduction of thermal conductivity, thereby extending the lifetimes of the sheet, the waterproof layer and the building structure.
摘要翻译：其中公开了一种用于绿色屋顶的片材，其包括铜或铝薄膜或具有预定厚度的非织造织物，其通过粘合剂牢固地层压在具有预定面积的玻璃织物的两侧，以防止植物的根部生长并使绝缘物达到最大来自湿气，隔热和导热性的降低，从而延长片材的寿命，防水层和建筑结构。

8. 发明申请

US20120196956A1 NON-CURING ADHESIVE WATERPROOF MATERIAL USING RECYCLED RUBBER, AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：使用回收橡胶的非固化粘合防水材料及其制造方法
公开(公告)号：US20120196956A1
公开(公告)日：2012-08-02
申请号：US13498204
申请日：2009-11-23
申请人： Sang Keun Lee , Jong Yong Lee , Il Kyu Cho , Jin Sung Kim
发明人： Sang Keun Lee , Jong Yong Lee , Il Kyu Cho , Jin Sung Kim
IPC分类号： C09J11/04 , C09J147/00 , C09J117/00 , C09J129/04
CPC分类号： C08L23/16 , C08K3/013 , C08K3/346 , C08K5/01 , C08L23/20 , C08L23/22 , C08L29/04 , C08L53/02 , C08L2207/20 , C08L2207/24 , C08L2666/02 , C09J11/08 , C09J119/003 , C09J2417/00
摘要： Disclosed therein is an unvulcanized adhesive waterproof material using reclaimed rubber and a preparation method thereof, and more particularly, an unvulcanized adhesive waterproof material using reclaimed rubber and a preparation method thereof, where reclaimed rubber is added to a softener, a tackifier, a filler, an SBS resin, a PVA pressure sensitive adhesive, etc. and subjected to mechanically forced mixing to form a highly adhesive material, which is then applied on asphalt sheets, HDPE sheets, nonwoven fabric, PE foam, or the like according to the intended use purpose to form a waterproof sheet.
摘要翻译：其中公开了使用再生橡胶的未硫化粘合防水材料及其制备方法，更具体地，使用再生橡胶的未硫化粘合防水材料及其制备方法，其中将再生橡胶加入软化剂，增粘剂，填料， SBS树脂，PVA压敏粘合剂等，并进行机械强制混合以形成高粘合性材料，然后根据预期用途涂布在沥青板，HDPE片，无纺布，PE泡沫等上目的是形成防水片。

9. 发明申请

US20120113884A1 METHOD OF ALLOCATING RESOURCE FOR RELAY 有权
标题翻译：分配资源用于继电器的方法
公开(公告)号：US20120113884A1
公开(公告)日：2012-05-10
申请号：US13142266
申请日：2009-12-24
申请人： Kyu Jin Park , Jae Hoon Chung , Han Kyu Cho , Yeong Hyeon Kwon , Sung Ho Moon
发明人： Kyu Jin Park , Jae Hoon Chung , Han Kyu Cho , Yeong Hyeon Kwon , Sung Ho Moon
IPC分类号： H04B7/14 , H04W4/06 , H04W72/04
CPC分类号： H04L1/0003 , H04B7/00 , H04B7/14 , H04B7/15542 , H04L1/0009 , H04L1/1861 , H04L5/0032 , H04L5/0053 , H04L5/0087 , H04L5/0094 , H04L2001/0097
摘要： A method for wireless backhaul communication between a base station and a relay is disclosed. The base station enables a physical control channel to be set up, separately from the terminal that is used to transmit control information to each relay and the physical downlink control channel that has been set up. The base station can transmit data to the relay based on this control information. In a special embodiment, physical downlink control channel transmissions can be minimized by prescribing in advance the transmission of control information between the base station and the relay.
摘要翻译：公开了一种基站与继电器之间无线回程通信的方法。基站能够与用于向已经建立的每个中继和物理下行链路控制信道发送控制信息的终端分开设置物理控制信道。基站可以基于该控制信息向中继站发送数据。在特殊实施例中，可以通过预先规定基站和中继站之间的控制信息的传输来最小化物理下行链路控制信道传输。

10. 发明授权

US08053347B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08053347B2
公开(公告)日：2011-11-08
申请号：US12379190
申请日：2009-02-13
申请人： Hee-Soo Kang , Byung-Kyu Cho , Choong-Ho Lee , Dong-Uk Choi
发明人： Hee-Soo Kang , Byung-Kyu Cho , Choong-Ho Lee , Dong-Uk Choi
IPC分类号： H01L21/3205
CPC分类号： H01L21/28052 , H01L27/11521 , H01L27/11524 , H01L29/66545
摘要： A method of manufacturing a semiconductor device, including forming a plurality of gate structures on a substrate, the gate structures each including a hard mask pattern stacked on a gate conductive pattern, forming an insulating layer pattern between the gate structures at least partially exposing a top surface of the hard mask pattern, forming a trench that exposes at least a top surface of the gate conductive pattern by selectively removing the hard mask pattern, and forming a silicide layer on the exposed gate conductive pattern.
摘要翻译：一种制造半导体器件的方法，包括在衬底上形成多个栅极结构，所述栅极结构各自包括堆叠在栅极导电图案上的硬掩模图案，在栅极结构之间形成至少部分地暴露顶部的绝缘层图案形成通过选择性地去除硬掩模图案而暴露出栅极导电图案的至少顶表面的沟槽，以及在暴露的栅极导电图案上形成硅化物层的沟槽。

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