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    • 1. 发明授权
    • Signal isolating device
    • 信号隔离装置
    • US5434694A
    • 1995-07-18
    • US8372
    • 1993-01-25
    • Hitoshi SaitoTakao KajitaniKenji YamaguchiAkio Yoshino
    • Hitoshi SaitoTakao KajitaniKenji YamaguchiAkio Yoshino
    • H04B10/00H04B10/04
    • H04B10/802
    • A signal isolating device, such as used in a signal conditioner which converts an output signal from a temperature sensor, or the like, in a process control system, comprising a pulse width signal outputting means, which receives a pulse width modulated signal and produces differentiated pulses at a leading edge and at a trailing edge of the pulse width modulated signal; a first photo-coupler activated by the differentiated pulse produced at the leadinge edge; a second photocoupler activated by the differentiated pulse produced at the trailing edge; a differential pulse reception means comprising a reception resistor for receiving output pulses from the first photocoupler and the second photocoupler and which produces a set pulse or a reset pulse according to the signal generated at the reception resistor; and a flip-flop circuit which is set or reset by the pulse signal produced by the differential pulse reception means. Advantageously, use of electric power is reduced and signal isolation is attained with stability and without being affected by extraneous noise.
    • 一种信号隔离装置,例如在用于将来自温度传感器的输出信号转换的信号调节器中使用的信号隔离装置等,其包括脉冲宽度信号输出装置,其接收脉宽调制信号并产生不同的 脉冲在脉冲宽度调制信号的前沿和后沿; 由在前缘产生的微分脉冲激活的第一光耦合器; 由在后缘产生的微分脉冲激活的第二光电耦合器; 差分脉冲接收装置,包括接收电阻器,用于接收来自第一光电耦合器和第二光电耦合器的输出脉冲,并根据在接收电阻器处产生的信号产生置位脉冲或复位脉冲; 以及由差分脉冲接收装置产生的脉冲信号设置或复位的触发器电路。 有利地,电力的使用减少,并且在稳定的情况下获得信号隔离并且不受外来噪声的影响。
    • 4. 发明授权
    • Semiconductor device and test method
    • 半导体器件及测试方法
    • US08633571B2
    • 2014-01-21
    • US13482146
    • 2012-05-29
    • Akihiko OkutsuHitoshi SaitoYoshiaki Okano
    • Akihiko OkutsuHitoshi SaitoYoshiaki Okano
    • H01L23/544H01L29/66
    • G01R31/275G01R31/2601G01R31/2884H01L22/32H01L23/522H01L23/564H01L23/585H01L2224/05554H01L2924/0002H01L2924/00
    • A semiconductor device includes a semiconductor substrate including an element region, an inner sealing and an outer sealing which are formed on the element region and have a first opening part and a second opening part, respectively, a multilayer interconnection structure which is formed on the substrate and stacks multiple inter-layer insulation films each including a wiring layer, a moisture resistant film formed between a first inter-layer insulation film and a second inter-layer insulation film which are included in the multilayer interconnection structure, a first portion which extended from a first side of the moisture resistant film and passes the first opening part, a second portion which extended from a second side of the moisture resistant film and passes through the second opening part, and a wiring pattern including a via plug which penetrates the moisture resistant film and connects the first portion and the second portion.
    • 半导体器件包括:半导体衬底,包括元件区域,内部密封件和外部密封件,所述元件区域,内部密封件和外部密封件分别形成在所述元件区域上并具有第一开口部分和第二开口部分,所述多层互连结构分别形成在所述衬底上 并且堆叠多个层间绝缘膜,每个层间绝缘膜包括布线层,形成在包括在多层互连结构中的第一层间绝缘膜和第二层间绝缘膜之间的防潮膜,第一部分从 所述防潮膜的第一面通过所述第一开口部,所述第二部分从所述防湿膜的第二侧延伸并穿过所述第二开口部;以及布线图案,其包括穿过所述防潮膜的通孔塞 并且连接第一部分和第二部分。
    • 5. 发明申请
    • MAGNETIC FIELD OBSERVATION DEVICE AND MAGNETIC FIELD OBSERVATION METHOD
    • 磁场观测装置和磁场观测方法
    • US20130174302A1
    • 2013-07-04
    • US13819486
    • 2011-09-05
    • Hitoshi SaitoSatoru Yoshimura
    • Hitoshi SaitoSatoru Yoshimura
    • G01Q60/50
    • G01Q60/38G01Q60/50G01Q60/54G01R33/022G01R33/0385
    • A magnetic-field-observation device and method for measuring magnetic force near a magnetic material specimen's surface with high resolution and detecting the polarity of the magnetic pole of specimen's surface. The device including: a probe; excitation mechanism that excites it; scanning mechanism that relatively moves the probe and specimen; alternating magnetic field generation mechanism to make the probe periodically undergo magnetization reversal and apply thereto an alternating magnetic field having magnitude not making the specimen undergo magnetization reversal; and modulation measurement mechanism for measuring degree of periodical frequency modulation of the probe's oscillation caused by its apparent spring constant periodically changed by force of periodically changed intensity and applied to the probe by alternating force through magnetic interaction between magnetizations of the probe and specimen, by frequency demodulation or by measuring intensity of one sideband wave spectrum among spectrums generated by the frequency modulation. The method performed using the device.
    • 一种用于以高分辨率测量磁性材料试样表面附近的磁力并检测试样表面磁极极性的磁场观测装置和方法。 该装置包括:探头; 激发机制; 相对移动探头和试样的扫描机构; 交变磁场产生机构使探针周期性地进行磁化反转,并向其施加具有不使样本经历磁化反转的量值的交变磁场; 以及用于测量由其由周期性变化的强度周期性地改变的表观弹簧常数引起的探头振荡周期性频率调制程度的调制测量机构,并且通过以探针和样品的磁化之间的磁相互作用的交替力通过频率施加到探针 通过频率调制产生的频谱中的一个边带波谱的强度进行解调或测量。 使用该设备执行的方法。
    • 7. 发明授权
    • Communicating apparatus and program
    • 通讯设备和程序
    • US07903276B2
    • 2011-03-08
    • US12144556
    • 2008-06-23
    • Hitoshi Saito
    • Hitoshi Saito
    • G06F3/12
    • H04N1/3333H04N2201/3335
    • It is an object to provide a communicating apparatus and its program in which in the case where the RTC pattern or the RCP frame cannot be received due to the noises or in the case where a modem diverges and data cannot be normally demodulated, a procedure signal can be certainly detected, the modem can advance to a low-speed mode, and a possibility of a communication error can be remarkably reduced. During the image reception, both a carrier of V.21ch2 modulation and data signal quality (EQM) in a high-speed mode are, in parallel, monitored. When the data signal quality (EQM) deteriorates to a value larger than or equal to a predetermined threshold value and the carrier of the V.21ch2 modulation is detected, the modem advances to the low-speed mode and the procedure signal is received.
    • 本发明的目的是提供一种通信装置及其程序,其中在由于噪声而不能接收到RTC模式或RCP帧的情况下,或者在调制解调器发散并且数据不能正常解调的情况下,过程信号 可以肯定地检测到,调制解调器可以前进到低速模式,并且可以显着降低通信错误的可能性。 在图像接收期间,并行地监视V.21ch2调制的载波和高速模式的数据信号质量(EQM)。 当数据信号质量(EQM)恶化到大于或等于预定阈值的值并且检测到V.21ch2调制的载波时,调制解调器进入低速模式并且接收过程信号。
    • 8. 发明授权
    • Semiconductor device
    • 半导体器件
    • US07221030B2
    • 2007-05-22
    • US11047603
    • 2005-02-02
    • Hitoshi Saito
    • Hitoshi Saito
    • H01L29/94
    • H01L21/76229H01L27/105H01L27/11526H01L27/11543H01L27/11546
    • A pad oxide film and a silicon nitride film are formed on a semiconductor substrate. Next, after the patterning of the silicon nitride film, by etching the pad oxide film and the substrate, a first trench is formed in a first region and a second trench is formed in a second region. After that, by performing side etching of the pad oxide film of the first region while protecting the second region with a resist, a gap is formed between the substrate and the silicon nitride film. Subsequently, the inner surfaces of the first and second trenches are oxidized. At this time, a relatively large volume of oxidizing agent (oxygen) is supplied to a top edge portion of the first trench, and the curvature of the corner of the substrate increases.
    • 在半导体衬底上形成衬垫氧化膜和氮化硅膜。 接下来,在氮化硅膜的图案化之后,通过蚀刻衬垫氧化物膜和衬底,在第一区域中形成第一沟槽,在第二区域中形成第二沟槽。 之后,通过对第一区域的衬垫氧化膜进行侧蚀刻同时用抗蚀剂保护第二区域,在衬底和氮化硅膜之间形成间隙。 随后,第一和第二沟槽的内表面被氧化。 此时,相当大量的氧化剂(氧气)被供给到第一沟槽的顶部边缘部分,并且衬底的角部的曲率增加。