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1. 发明授权

US08721790B2 Film deposition apparatus 有权
标题翻译：膜沉积装置
公开(公告)号：US08721790B2
公开(公告)日：2014-05-13
申请号：US12963673
申请日：2010-12-09
申请人： Hitoshi Kato , Manabu Honma , Kohichi Orito , Yasushi Takeuchi , Hiroyuki Kikuchi
发明人： Hitoshi Kato , Manabu Honma , Kohichi Orito , Yasushi Takeuchi , Hiroyuki Kikuchi
IPC分类号： C23C16/453 , C23C16/455 , C23C16/458 , H01L21/306 , C23F1/00 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45551 , C23C16/4412 , C23C16/45521 , C23C16/45578
摘要： A film deposition apparatus includes a turntable provided in the chamber and having on a first surface a substrate receiving area in which a substrate is placed; first and second reaction gas supplying portions supplying first and second reaction gases to the first surface, respectively; a separation gas supplying portion provided between the first reaction gas supplying portion and the second reaction gas supplying portion and supplying a separation gas that separates the first reaction gas and the second reaction gas; an evacuation port that evacuates the chamber; a space defining member provided for at least one of the first and second reaction gas supplying portions and defining a first space between the at least one of the first and second reaction gas supplying portions and the turntable and a second space so that the separation gas is likely to flow through the second space rather than the first space.
摘要翻译：一种成膜装置，包括设置在所述室中并在第一表面上具有放置基板的基板接收区域的转盘; 分别向第一表面供应第一和第二反应气体的第一和第二反应气体供应部分; 分离气体供给部，设置在第一反应气体供给部和第二反应气体供给部之间，供给分离第一反应气体和第二反应气体的分离气体; 疏散室的疏散口; 设置在所述第一反应气体供给部和所述第二反应气体供给部中的至少一个的空间限定部件，在所述第一反应气体供给部和所述第二反应气体供给部中的至少一个与所述转台之间形成第一空间，可能流经第二空间而不是第一空间。

2. 发明申请

US20110139074A1 FILM DEPOSITION APPARATUS 有权
标题翻译：胶片沉积装置
公开(公告)号：US20110139074A1
公开(公告)日：2011-06-16
申请号：US12963673
申请日：2010-12-09
申请人： HITOSHI KATO , Manabu Honma , Kohichi Orito , Yasushi Takeuchi , Hiroyuki Kikuchi
发明人： HITOSHI KATO , Manabu Honma , Kohichi Orito , Yasushi Takeuchi , Hiroyuki Kikuchi
IPC分类号： C23C16/458 , C23C16/00
CPC分类号： C23C16/45551 , C23C16/4412 , C23C16/45521 , C23C16/45578
摘要： A film deposition apparatus includes a turntable provided in the chamber and having on a first surface a substrate receiving area in which a substrate is placed; first and second reaction gas supplying portions supplying first and second reaction gases to the first surface, respectively; a separation gas supplying portion provided between the first reaction gas supplying portion and the second reaction gas supplying portion and supplying a separation gas that separates the first reaction gas and the second reaction gas; an evacuation port that evacuates the chamber; a space defining member provided for at least one of the first and second reaction gas supplying portions and defining a first space between the at least one of the first and second reaction gas supplying portions and the turntable and a second space so that the separation gas is likely to flow through the second space rather than the first space.
摘要翻译：一种成膜装置，包括设置在所述室中并在第一表面上具有放置基板的基板接收区域的转盘; 分别向第一表面供应第一和第二反应气体的第一和第二反应气体供应部分; 分离气体供给部，设置在第一反应气体供给部和第二反应气体供给部之间，供给分离第一反应气体和第二反应气体的分离气体; 疏散室的疏散口; 设置在所述第一反应气体供给部和所述第二反应气体供给部中的至少一个的空间限定部件，在所述第一反应气体供给部和所述第二反应气体供给部中的至少一个与所述转台之间形成第一空间，可能流经第二空间而不是第一空间。

3. 发明申请

US20100116210A1 GAS INJECTOR AND FILM DEPOSITION APPARATUS 审中-公开
标题翻译：气体注射器和膜沉积装置
公开(公告)号：US20100116210A1
公开(公告)日：2010-05-13
申请号：US12615311
申请日：2009-11-10
申请人： HITOSHI KATO , Yasushi Takeuchi , Manabu Honma , Hiroyuki Kikuchi
发明人： HITOSHI KATO , Yasushi Takeuchi , Manabu Honma , Hiroyuki Kikuchi
IPC分类号： C23C16/00 , B05B1/14
CPC分类号： C23C16/45551 , B05B1/20 , B05B1/267 , B05B13/0242 , C23C16/45523 , C23C16/45578 , C23C16/4584
摘要： An injector body of a gas injector has a gas inlet and a gas passage; plural gas outflow openings disposed on a wall part of the injector body along a longitudinal direction of the injector body; and a guide member that provides a slit-shaped gas discharge opening extending in the longitudinal direction of the injector body on an outer surface of the injector body, and guides gas flowing from the gas outflow openings to the gas discharge opening.
摘要翻译：气体喷射器的喷射器主体具有气体入口和气体通道; 多个气体流出开口，沿着喷射器主体的长度方向设置在喷射器主体的壁部上; 以及引导构件，其在所述喷射器主体的外表面上提供沿所述喷射器主体的纵向方向延伸的狭缝状气体排出口，并且引导从所述气体流出口流到所述气体排出口的气体。

4. 发明申请

US20110159188A1 FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER-READABLE STORAGE MEDIUM 审中-公开
标题翻译：薄膜沉积装置，薄膜沉积方法和计算机可读存储介质
公开(公告)号：US20110159188A1
公开(公告)日：2011-06-30
申请号：US12972599
申请日：2010-12-20
申请人： Hitoshi Kato , Kohichi Orito , Hiroyuki Kikuchi , Muneyuki Otani , Takeshi Kumagai , Kensaku Narushima , Takashi Nishimori
发明人： Hitoshi Kato , Kohichi Orito , Hiroyuki Kikuchi , Muneyuki Otani , Takeshi Kumagai , Kensaku Narushima , Takashi Nishimori
IPC分类号： C23C16/34 , C23C16/00 , C23C16/52
CPC分类号： C23C16/4584 , C23C16/34 , C23C16/4412 , C23C16/45519 , C23C16/45523 , C23C16/45591 , C23C16/4585 , C23C16/50 , C23C16/52 , H01L21/28556 , H01L21/76843
摘要： A film deposition apparatus rotates a turntable and each gas nozzle relatively to each other at a rotational speed of 100 rpm or higher when depositing a titanium nitride film, to speed up a reaction gas supply cycle or a film deposition cycle of a reaction product. A next film of the reaction product is deposited before the grain size of the reaction product already generated on a substrate surface begins to grow due to crystallization of the already generated reaction product.
摘要翻译：当沉积氮化钛膜时，成膜装置以100rpm或更高的旋转速度使转台和每个气体喷嘴彼此相对旋转，以加速反应气体供应循环或反应产物的成膜循环。在已经产生的反应产物的晶粒尺寸由于已经产生的反应产物的结晶开始生长之后，沉积下一个反应产物的膜。

5. 发明申请

US20100260935A1 FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER READABLE STORAGE MEDIUM 有权
标题翻译：薄膜沉积装置，薄膜沉积方法和计算机可读存储介质
公开(公告)号：US20100260935A1
公开(公告)日：2010-10-14
申请号：US12753932
申请日：2010-04-05
申请人： HITOSHI KATO , Manabu Honma , Hiroyuki Kikuchi
发明人： HITOSHI KATO , Manabu Honma , Hiroyuki Kikuchi
IPC分类号： C23C16/52 , C23C16/00 , C23C16/46
CPC分类号： H01L21/67115 , C23C16/402 , C23C16/45519 , C23C16/45536 , C23C16/45551 , C23C16/45578 , C23C16/458 , C23C16/46 , C23C16/463 , C23C16/482 , C23C16/54 , H01L21/6719 , H01L21/67207 , H01L21/68764 , H01L21/68771
摘要： A rotation table on which a wafer is placed is rotated around a vertical axis in order to supply to an upper surface of the wafer a first reaction gas for allowing the first reaction gas to be adsorbed on the upper surface, an auxiliary gas that reacts with the first reaction gas to produce an intermediate product having reflowability, and a second reaction gas that is reacted with the intermediate product to produce a reaction product in this order; and the reaction product is heated by a heating lamp in order to densify the reaction product.
摘要翻译：放置晶片的旋转台围绕垂直轴旋转，以向晶片的上表面提供用于允许第一反应气体吸附在上表面上的第一反应气体，与产生具有回流性的中间产物的第一反应气体和与中间产物反应以产生反应产物的第二反应气体; 并且通过加热灯加热反应产物以使反应产物致密化。

6. 发明授权

US09093490B2 Film deposition apparatus 有权
标题翻译：膜沉积装置
公开(公告)号：US09093490B2
公开(公告)日：2015-07-28
申请号：US12713317
申请日：2010-02-26
申请人： Hitoshi Kato , Manabu Honma , Hiroyuki Kikuchi
发明人： Hitoshi Kato , Manabu Honma , Hiroyuki Kikuchi
IPC分类号： C23C16/455 , C23C16/40 , H01L21/677 , H01L21/687
CPC分类号： H01L21/68764 , C23C16/402 , C23C16/45551 , C23C16/45578 , C23C16/45589 , H01L21/68771
摘要： A disclosed film deposition apparatus for depositing a film on a substrate by supplying a reaction gas to an upper surface of the substrate in a vacuum chamber includes a susceptor provided in the vacuum chamber, wherein substrate receiving areas are formed along a circle whose center lies in a center portion of the susceptor; a main gas supplying portion provided opposing the susceptor in order to supply the reaction gas to the substrate receiving areas of the susceptor; a compensation gas supplying portion configured to supply the reaction gas to an upper surface of the susceptor in order to compensate for concentration of the reaction gas supplied from the main gas supplying portion along a radius direction of the susceptor; and a rotation mechanism configured to rotate the susceptor relative to the main gas supplying portion and the compensation gas supplying portion around the center portion of the susceptor.
摘要翻译：公开的一种用于在真空室中将反应气体提供给基板的上表面的基板上沉积薄膜的薄膜沉积装置包括设置在真空室中的基座，其中基板接收区域沿着中心位于基座的中心部分; 主气体供给部，其与所述基座相对设置，以将所述反应气体供应到所述基座的所述基板接收区域; 补偿气体供给部，其构造成将反应气体供给到所述基座的上表面，以补偿从所述主气体供给部沿着所述基座的半径方向供给的反应气体的浓度; 以及旋转机构，其构造成使所述基座相对于所述主气体供给部和所述补偿气体供给部围绕所述基座的中心部旋转。

7. 发明申请

US20100260936A1 SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND COMPUTER-READABLE STORAGE MEDIUM 有权
标题翻译：基板处理装置，基板处理方法和计算机可读存储介质
公开(公告)号：US20100260936A1
公开(公告)日：2010-10-14
申请号：US12753978
申请日：2010-04-05
申请人： Hitoshi Kato , Manabu Honma , Hiroyuki Kikuchi
发明人： Hitoshi Kato , Manabu Honma , Hiroyuki Kikuchi
IPC分类号： C23C16/52 , C23C16/00 , C23C16/44
CPC分类号： H01L21/67207 , C23C16/52 , C23C16/54 , H01L21/67109 , H01L21/6719 , H01L21/68764 , H01L21/68771
摘要： In a substrate processing apparatus, a film deposition device and a heat processing device to perform an anneal processing are airtightly connected to a vacuum conveying chamber, and a substrate rotating unit to cause a substrate to rotate around a vertical axis is provided in the vacuum conveying chamber. A control unit is arranged to stop a relative rotation of a plurality of reactive gas supplying units, a separating gas supplying unit and a table by a rotation device in the middle of a film deposition process of the substrate, cause a conveying unit to take out the substrate from a vacuum chamber, and output a control signal that causes a substrate rotating unit to change a direction of the substrate.
摘要翻译：在基板处理装置中，进行退火处理的成膜装置和热处理装置气密地连接到真空输送室，并且在真空输送中设置使基板绕垂直轴旋转的基板旋转单元房间。控制单元设置成在基板的成膜过程的中间通过旋转装置停止多个反应气体供给单元，分离气体供给单元和台的相对旋转，使得输送单元取出来自真空室的基板，并输出使基板旋转单元改变基板的方向的控制信号。

8. 发明授权

US08992685B2 Substrate processing apparatus, substrate processing method, and computer-readable storage medium 有权
标题翻译：基板处理装置，基板处理方法和计算机可读存储介质
公开(公告)号：US08992685B2
公开(公告)日：2015-03-31
申请号：US12753978
申请日：2010-04-05
申请人： Hitoshi Kato , Manabu Honma , Hiroyuki Kikuchi , Yu Wamura , Jun Ogawa
发明人： Hitoshi Kato , Manabu Honma , Hiroyuki Kikuchi , Yu Wamura , Jun Ogawa
IPC分类号： C23C16/00 , H01L21/67 , H01L21/687 , C23C16/54 , C23C16/52
CPC分类号： H01L21/67207 , C23C16/52 , C23C16/54 , H01L21/67109 , H01L21/6719 , H01L21/68764 , H01L21/68771
摘要： In a substrate processing apparatus, a film deposition device and a heat processing device to perform an anneal processing are airtightly connected to a vacuum conveying chamber, and a substrate rotating unit to cause a substrate to rotate around a vertical axis is provided in the vacuum conveying chamber. A control unit is arranged to stop a relative rotation of a plurality of reactive gas supplying units, a separating gas supplying unit and a table by a rotation device in the middle of a film deposition process of the substrate, cause a conveying unit to take out the substrate from a vacuum chamber, and output a control signal that causes a substrate rotating unit to change a direction of the substrate.
摘要翻译：在基板处理装置中，进行退火处理的成膜装置和热处理装置气密地连接到真空输送室，并且在真空输送中设置使基板绕垂直轴旋转的基板旋转单元房间。控制单元设置成在基板的成膜过程的中间通过旋转装置停止多个反应气体供给单元，分离气体供给单元和台的相对旋转，使得输送单元取出来自真空室的基板，并且输出使基板旋转单元改变基板的方向的控制信号。

9. 发明授权

US08882915B2 Film deposition apparatus, film deposition method, and computer readable storage medium 有权
标题翻译：薄膜沉积装置，薄膜沉积方法和计算机可读存储介质
公开(公告)号：US08882915B2
公开(公告)日：2014-11-11
申请号：US12753932
申请日：2010-04-05
申请人： Hitoshi Kato , Manabu Honma , Hiroyuki Kikuchi
发明人： Hitoshi Kato , Manabu Honma , Hiroyuki Kikuchi
IPC分类号： C23C16/455 , C23C16/458 , C23C16/46 , H01L21/67 , C23C16/48 , C23C16/40 , C23C16/54 , H01L21/687
CPC分类号： H01L21/67115 , C23C16/402 , C23C16/45519 , C23C16/45536 , C23C16/45551 , C23C16/45578 , C23C16/458 , C23C16/46 , C23C16/463 , C23C16/482 , C23C16/54 , H01L21/6719 , H01L21/67207 , H01L21/68764 , H01L21/68771
摘要： A rotation table on which a wafer is placed is rotated around a vertical axis in order to supply to an upper surface of the wafer a first reaction gas for allowing the first reaction gas to be adsorbed on the upper surface, an auxiliary gas that reacts with the first reaction gas to produce an intermediate product having reflowability, and a second reaction gas that is reacted with the intermediate product to produce a reaction product in this order; and the reaction product is heated by a heating lamp in order to densify the reaction product.
摘要翻译：放置晶片的旋转台围绕垂直轴旋转，以向晶片的上表面提供用于允许第一反应气体吸附在上表面上的第一反应气体，与产生具有回流性的中间产物的第一反应气体和与中间产物反应以产生反应产物的第二反应气体; 并且通过加热灯加热反应产物以使反应产物致密化。

10. 发明申请

US20100229797A1 FILM DEPOSITION APPARATUS 有权
标题翻译：胶片沉积装置
公开(公告)号：US20100229797A1
公开(公告)日：2010-09-16
申请号：US12713317
申请日：2010-02-26
申请人： HITOSHI KATO , Manabu Honma , Hiroyuki Kikuchi
发明人： HITOSHI KATO , Manabu Honma , Hiroyuki Kikuchi
IPC分类号： C23C16/00
CPC分类号： H01L21/68764 , C23C16/402 , C23C16/45551 , C23C16/45578 , C23C16/45589 , H01L21/68771
摘要： A disclosed film deposition apparatus for depositing a film on a substrate by supplying a reaction gas to an upper surface of the substrate in a vacuum chamber includes a susceptor provided in the vacuum chamber, wherein substrate receiving areas are formed along a circle whose center lies in a center portion of the susceptor; a main gas supplying portion provided opposing the susceptor in order to supply the reaction gas to the substrate receiving areas of the susceptor; a compensation gas supplying portion configured to supply the reaction gas to an upper surface of the susceptor in order to compensate for concentration of the reaction gas supplied from the main gas supplying portion along a radius direction of the susceptor; and a rotation mechanism configured to rotate the susceptor relative to the main gas supplying portion and the compensation gas supplying portion around the center portion of the susceptor.
摘要翻译：公开的一种用于在真空室中将反应气体提供给基板的上表面的基板上沉积薄膜的薄膜沉积装置包括设置在真空室中的基座，其中基板接收区域沿着中心位于基座的中心部分; 主气体供给部，其与所述基座相对设置，以将所述反应气体供应到所述基座的所述基板接收区域; 补偿气体供给部，其构造成将反应气体供给到所述基座的上表面，以补偿从所述主气体供给部沿着所述基座的半径方向供给的反应气体的浓度; 以及旋转机构，其构造成使所述基座相对于所述主气体供给部和所述补偿气体供给部围绕所述基座的中心部旋转。

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