专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08721790B2 Film deposition apparatus 有权
标题翻译：膜沉积装置
公开(公告)号：US08721790B2
公开(公告)日：2014-05-13
申请号：US12963673
申请日：2010-12-09
申请人： Hitoshi Kato , Manabu Honma , Kohichi Orito , Yasushi Takeuchi , Hiroyuki Kikuchi
发明人： Hitoshi Kato , Manabu Honma , Kohichi Orito , Yasushi Takeuchi , Hiroyuki Kikuchi
IPC分类号： C23C16/453 , C23C16/455 , C23C16/458 , H01L21/306 , C23F1/00 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45551 , C23C16/4412 , C23C16/45521 , C23C16/45578
摘要： A film deposition apparatus includes a turntable provided in the chamber and having on a first surface a substrate receiving area in which a substrate is placed; first and second reaction gas supplying portions supplying first and second reaction gases to the first surface, respectively; a separation gas supplying portion provided between the first reaction gas supplying portion and the second reaction gas supplying portion and supplying a separation gas that separates the first reaction gas and the second reaction gas; an evacuation port that evacuates the chamber; a space defining member provided for at least one of the first and second reaction gas supplying portions and defining a first space between the at least one of the first and second reaction gas supplying portions and the turntable and a second space so that the separation gas is likely to flow through the second space rather than the first space.
摘要翻译：一种成膜装置，包括设置在所述室中并在第一表面上具有放置基板的基板接收区域的转盘; 分别向第一表面供应第一和第二反应气体的第一和第二反应气体供应部分; 分离气体供给部，设置在第一反应气体供给部和第二反应气体供给部之间，供给分离第一反应气体和第二反应气体的分离气体; 疏散室的疏散口; 设置在所述第一反应气体供给部和所述第二反应气体供给部中的至少一个的空间限定部件，在所述第一反应气体供给部和所述第二反应气体供给部中的至少一个与所述转台之间形成第一空间，可能流经第二空间而不是第一空间。

2. 发明申请

US20110139074A1 FILM DEPOSITION APPARATUS 有权
标题翻译：胶片沉积装置
公开(公告)号：US20110139074A1
公开(公告)日：2011-06-16
申请号：US12963673
申请日：2010-12-09
申请人： HITOSHI KATO , Manabu Honma , Kohichi Orito , Yasushi Takeuchi , Hiroyuki Kikuchi
发明人： HITOSHI KATO , Manabu Honma , Kohichi Orito , Yasushi Takeuchi , Hiroyuki Kikuchi
IPC分类号： C23C16/458 , C23C16/00
CPC分类号： C23C16/45551 , C23C16/4412 , C23C16/45521 , C23C16/45578
摘要： A film deposition apparatus includes a turntable provided in the chamber and having on a first surface a substrate receiving area in which a substrate is placed; first and second reaction gas supplying portions supplying first and second reaction gases to the first surface, respectively; a separation gas supplying portion provided between the first reaction gas supplying portion and the second reaction gas supplying portion and supplying a separation gas that separates the first reaction gas and the second reaction gas; an evacuation port that evacuates the chamber; a space defining member provided for at least one of the first and second reaction gas supplying portions and defining a first space between the at least one of the first and second reaction gas supplying portions and the turntable and a second space so that the separation gas is likely to flow through the second space rather than the first space.
摘要翻译：一种成膜装置，包括设置在所述室中并在第一表面上具有放置基板的基板接收区域的转盘; 分别向第一表面供应第一和第二反应气体的第一和第二反应气体供应部分; 分离气体供给部，设置在第一反应气体供给部和第二反应气体供给部之间，供给分离第一反应气体和第二反应气体的分离气体; 疏散室的疏散口; 设置在所述第一反应气体供给部和所述第二反应气体供给部中的至少一个的空间限定部件，在所述第一反应气体供给部和所述第二反应气体供给部中的至少一个与所述转台之间形成第一空间，可能流经第二空间而不是第一空间。

3. 发明申请

US20100116210A1 GAS INJECTOR AND FILM DEPOSITION APPARATUS 审中-公开
标题翻译：气体注射器和膜沉积装置
公开(公告)号：US20100116210A1
公开(公告)日：2010-05-13
申请号：US12615311
申请日：2009-11-10
申请人： HITOSHI KATO , Yasushi Takeuchi , Manabu Honma , Hiroyuki Kikuchi
发明人： HITOSHI KATO , Yasushi Takeuchi , Manabu Honma , Hiroyuki Kikuchi
IPC分类号： C23C16/00 , B05B1/14
CPC分类号： C23C16/45551 , B05B1/20 , B05B1/267 , B05B13/0242 , C23C16/45523 , C23C16/45578 , C23C16/4584
摘要： An injector body of a gas injector has a gas inlet and a gas passage; plural gas outflow openings disposed on a wall part of the injector body along a longitudinal direction of the injector body; and a guide member that provides a slit-shaped gas discharge opening extending in the longitudinal direction of the injector body on an outer surface of the injector body, and guides gas flowing from the gas outflow openings to the gas discharge opening.
摘要翻译：气体喷射器的喷射器主体具有气体入口和气体通道; 多个气体流出开口，沿着喷射器主体的长度方向设置在喷射器主体的壁部上; 以及引导构件，其在所述喷射器主体的外表面上提供沿所述喷射器主体的纵向方向延伸的狭缝状气体排出口，并且引导从所述气体流出口流到所述气体排出口的气体。

4. 发明申请

US20100055297A1 FILM DEPOSITION APPARATUS, SUBSTRATE PROCESSING APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER-READABLE STORAGE MEDIUM FOR FILM DEPOSITION METHOD 有权
标题翻译：薄膜沉积装置，基板处理装置，薄膜沉积方法和用于薄膜沉积方法的计算机可读存储介质
公开(公告)号：US20100055297A1
公开(公告)日：2010-03-04
申请号：US12547545
申请日：2009-08-26
申请人： HITOSHI KATO , Manabu Honma , Kohichi Orito
发明人： HITOSHI KATO , Manabu Honma , Kohichi Orito
IPC分类号： C23C16/52 , B05C11/10
CPC分类号： C23C16/45551 , C23C16/45557 , C23C16/4584 , C23C16/52
摘要： There is disclosed a film deposition apparatus and a film deposition method for depositing a film on a substrate by carrying out cycles of supplying in turn at least two source gases to the substrate in order to form a layer of a reaction product, and a computer readable storage medium storing a computer program for causing the film deposition apparatus to carry out the film deposition method.
摘要翻译：公开了一种膜沉积设备和薄膜沉积方法，用于通过进行向基板提供至少两种源气体以便形成反应产物层的循环，从而在基板上沉积膜，并且计算机可读存储用于使成膜装置进行成膜方法的计算机程序的存储介质。

5. 发明授权

US09416448B2 Film deposition apparatus, substrate processing apparatus, film deposition method, and computer-readable storage medium for film deposition method 有权
标题翻译：薄膜沉积装置，基板处理装置，薄膜沉积方法和用于薄膜沉积方法的计算机可读存储介质
公开(公告)号：US09416448B2
公开(公告)日：2016-08-16
申请号：US12547545
申请日：2009-08-26
申请人： Hitoshi Kato , Manabu Honma , Kohichi Orito
发明人： Hitoshi Kato , Manabu Honma , Kohichi Orito
IPC分类号： C23C16/455 , C23C16/458 , C23C16/52
CPC分类号： C23C16/45551 , C23C16/45557 , C23C16/4584 , C23C16/52
摘要： There is disclosed a film deposition apparatus and a film deposition method for depositing a film on a substrate by carrying out cycles of supplying in turn at least two source gases to the substrate in order to form a layer of a reaction product, and a computer readable storage medium storing a computer program for causing the film deposition apparatus to carry out the film deposition method.
摘要翻译：公开了一种膜沉积设备和薄膜沉积方法，用于通过进行向基板提供至少两种源气体以便形成反应产物层的循环，从而在基板上沉积膜，并且计算机可读存储用于使成膜装置进行成膜方法的计算机程序的存储介质。

6. 发明申请

US20120222615A1 FILM DEPOSITION APPARATUS 审中-公开
标题翻译：胶片沉积装置
公开(公告)号：US20120222615A1
公开(公告)日：2012-09-06
申请号：US13221188
申请日：2011-08-30
申请人： Hitoshi KATO , Tsuneyuki Okabe , Manabu Honma , Takeshi Kumagai , Yasushi Takeuchi
发明人： Hitoshi KATO , Tsuneyuki Okabe , Manabu Honma , Takeshi Kumagai , Yasushi Takeuchi
IPC分类号： C23C16/455
CPC分类号： H01L21/68764 , C23C16/45551 , H01L21/68771
摘要： A film deposition apparatus includes a first turntable including at least ten substrate receiving areas that receive corresponding 300 mm substrates; a first reaction gas supplying portion arranged in a first area inside the chamber to supply a first reaction gas; a second reaction gas supplying portion arranged in a second area away from the first reaction gas supplying portion along the rotation direction of the first turntable to supply a second reaction gas; and a separation area arranged between the first and the second areas. The separation area includes a separation gas supplying portion that supplies a separation gas that separates the first reaction and the second reaction gases, and a ceiling surface having a height so that a pressure in a space between the ceiling surface and the first turntable is higher with the separation gas than pressures in the first and the second areas.
摘要翻译：一种成膜装置包括：第一转盘，其包括至少十个接收对应的300mm基板的基板接收区域; 第一反应气体供给部，其布置在所述室内的第一区域中，以供应第一反应气体; 第二反应气体供给部，其沿着第一转台的旋转方向配置在远离第一反应气体供给部的第二区域，供给第二反应气体; 以及布置在第一和第二区域之间的分离区域。分离区域包括供给分离第一反应和第二反应气体的分离气体的分离气体供给部以及具有使顶棚面与第一转台之间的空间内的压力较高的高度的顶面，分离气体而不是第一和第二区域中的压力。

7. 发明申请

US20110159187A1 FILM DEPOSITION APPARATUS AND FILM DEPOSITION METHOD 审中-公开
标题翻译：膜沉积装置和膜沉积方法
公开(公告)号：US20110159187A1
公开(公告)日：2011-06-30
申请号：US12969757
申请日：2010-12-16
申请人： Hitoshi KATO , Manabu Honma , Yasushi Takeuchi
发明人： Hitoshi KATO , Manabu Honma , Yasushi Takeuchi
IPC分类号： C23C16/448 , C23C16/455 , C23C16/458 , C23C16/52
CPC分类号： H01L21/0228 , C23C16/45544 , C23C16/45548 , C23C16/45557 , C23C16/45563 , C23C16/45591 , C23C16/4585 , H01L21/67706
摘要： A film deposition apparatus includes a separation member that extends to cover a rotation center of the turntable and two different points on a circumference of the turntable above the turntable, thereby separating the inside of the chamber into a first area and a second area; a first reaction gas supplying portion that supplies a first reaction gas toward the turntable in the first area; a second reaction gas supplying portion that supplies a second reaction gas toward the turntable in the second area; a first evacuation port that evacuates the first reaction gas and the first separation gas that converges with the first reaction gas; and a second evacuation port that evacuates the second reaction gas and the first separation gas that converges with the second reaction gas.
摘要翻译：一种成膜装置，包括：分离部件，该分离部件延伸以覆盖转台的旋转中心，并且在转盘上方的转盘的圆周上的两个不同点，从而将腔室的内部分离成第一区域和第二区域; 第一反应气体供给部，其向第一区域内的转台供给第一反应气体; 第二反应气体供给部，其向第二区域的转台供给第二反应气体; 排出第一反应气体和与第一反应气体会聚的第一分离气体的第一排气口; 以及抽出第二反应气体和与第二反应气体会聚的第一分离气体的第二排气口。

8. 发明申请

US20100229797A1 FILM DEPOSITION APPARATUS 有权
标题翻译：胶片沉积装置
公开(公告)号：US20100229797A1
公开(公告)日：2010-09-16
申请号：US12713317
申请日：2010-02-26
申请人： HITOSHI KATO , Manabu Honma , Hiroyuki Kikuchi
发明人： HITOSHI KATO , Manabu Honma , Hiroyuki Kikuchi
IPC分类号： C23C16/00
CPC分类号： H01L21/68764 , C23C16/402 , C23C16/45551 , C23C16/45578 , C23C16/45589 , H01L21/68771
摘要： A disclosed film deposition apparatus for depositing a film on a substrate by supplying a reaction gas to an upper surface of the substrate in a vacuum chamber includes a susceptor provided in the vacuum chamber, wherein substrate receiving areas are formed along a circle whose center lies in a center portion of the susceptor; a main gas supplying portion provided opposing the susceptor in order to supply the reaction gas to the substrate receiving areas of the susceptor; a compensation gas supplying portion configured to supply the reaction gas to an upper surface of the susceptor in order to compensate for concentration of the reaction gas supplied from the main gas supplying portion along a radius direction of the susceptor; and a rotation mechanism configured to rotate the susceptor relative to the main gas supplying portion and the compensation gas supplying portion around the center portion of the susceptor.
摘要翻译：公开的一种用于在真空室中将反应气体提供给基板的上表面的基板上沉积薄膜的薄膜沉积装置包括设置在真空室中的基座，其中基板接收区域沿着中心位于基座的中心部分; 主气体供给部，其与所述基座相对设置，以将所述反应气体供应到所述基座的所述基板接收区域; 补偿气体供给部，其构造成将反应气体供给到所述基座的上表面，以补偿从所述主气体供给部沿着所述基座的半径方向供给的反应气体的浓度; 以及旋转机构，其构造成使所述基座相对于所述主气体供给部和所述补偿气体供给部围绕所述基座的中心部旋转。

9. 发明申请

US20100227059A1 FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER READABLE STORAGE MEDIUM 审中-公开
标题翻译：薄膜沉积装置，薄膜沉积方法和计算机可读存储介质
公开(公告)号：US20100227059A1
公开(公告)日：2010-09-09
申请号：US12713225
申请日：2010-02-26
申请人： Hitoshi Kato , Manabu Honma , Hiroyuki Kikuchi
发明人： Hitoshi Kato , Manabu Honma , Hiroyuki Kikuchi
IPC分类号： C23C16/458 , C23C16/00 , C23C16/52
CPC分类号： C23C16/45551
摘要： A film is deposited to a predetermined thickness on a wafer by allowing the wafer placed on a susceptor to alternately move through plural process areas where corresponding plural reaction gases are supplied from corresponding plural reaction gas supplying portions and a separation area where a separation gas is supplied from a separation gas supplying portion in order to separate the plural reaction gases. Such movement is achieved by rotating the susceptor relative to the plural reaction gas supplying portions and the separation gas supplying portion, or rotating the plural reaction gas supplying portions and the separation gas supplying portion relative to the susceptor. Then, when the film is deposited in the above manner to a predetermined thickness, the film deposition is temporarily stopped; the wafer is rotated around its center; and the film is deposited to another predetermined thickness in the same manner.
摘要翻译：通过允许放置在基座上的晶片交替地移动通过从相应的多个反应气体供应部分供应相应的多个反应气体的多个处理区域和分离气体供应的分离区域，将薄膜沉积到晶片上的预定厚度从分离气体供给部分分离多个反应气体。通过使基座相对于多个反应气体供给部和分离气体供给部旋转，或者使多个反应气体供给部和分离气体供给部相对于基座旋转而实现。然后，当以上述方式将膜沉积到预定厚度时，膜沉积暂时停止; 晶片绕其中心旋转; 并且以相同的方式将膜沉积到另一预定厚度。

10. 发明申请

US20100260935A1 FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER READABLE STORAGE MEDIUM 有权
标题翻译：薄膜沉积装置，薄膜沉积方法和计算机可读存储介质
公开(公告)号：US20100260935A1
公开(公告)日：2010-10-14
申请号：US12753932
申请日：2010-04-05
申请人： HITOSHI KATO , Manabu Honma , Hiroyuki Kikuchi
发明人： HITOSHI KATO , Manabu Honma , Hiroyuki Kikuchi
IPC分类号： C23C16/52 , C23C16/00 , C23C16/46
CPC分类号： H01L21/67115 , C23C16/402 , C23C16/45519 , C23C16/45536 , C23C16/45551 , C23C16/45578 , C23C16/458 , C23C16/46 , C23C16/463 , C23C16/482 , C23C16/54 , H01L21/6719 , H01L21/67207 , H01L21/68764 , H01L21/68771
摘要： A rotation table on which a wafer is placed is rotated around a vertical axis in order to supply to an upper surface of the wafer a first reaction gas for allowing the first reaction gas to be adsorbed on the upper surface, an auxiliary gas that reacts with the first reaction gas to produce an intermediate product having reflowability, and a second reaction gas that is reacted with the intermediate product to produce a reaction product in this order; and the reaction product is heated by a heating lamp in order to densify the reaction product.
摘要翻译：放置晶片的旋转台围绕垂直轴旋转，以向晶片的上表面提供用于允许第一反应气体吸附在上表面上的第一反应气体，与产生具有回流性的中间产物的第一反应气体和与中间产物反应以产生反应产物的第二反应气体; 并且通过加热灯加热反应产物以使反应产物致密化。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式