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1. 发明申请

US20110159188A1 FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER-READABLE STORAGE MEDIUM 审中-公开
标题翻译：薄膜沉积装置，薄膜沉积方法和计算机可读存储介质
公开(公告)号：US20110159188A1
公开(公告)日：2011-06-30
申请号：US12972599
申请日：2010-12-20
申请人： Hitoshi Kato , Kohichi Orito , Hiroyuki Kikuchi , Muneyuki Otani , Takeshi Kumagai , Kensaku Narushima , Takashi Nishimori
发明人： Hitoshi Kato , Kohichi Orito , Hiroyuki Kikuchi , Muneyuki Otani , Takeshi Kumagai , Kensaku Narushima , Takashi Nishimori
IPC分类号： C23C16/34 , C23C16/00 , C23C16/52
CPC分类号： C23C16/4584 , C23C16/34 , C23C16/4412 , C23C16/45519 , C23C16/45523 , C23C16/45591 , C23C16/4585 , C23C16/50 , C23C16/52 , H01L21/28556 , H01L21/76843
摘要： A film deposition apparatus rotates a turntable and each gas nozzle relatively to each other at a rotational speed of 100 rpm or higher when depositing a titanium nitride film, to speed up a reaction gas supply cycle or a film deposition cycle of a reaction product. A next film of the reaction product is deposited before the grain size of the reaction product already generated on a substrate surface begins to grow due to crystallization of the already generated reaction product.
摘要翻译：当沉积氮化钛膜时，成膜装置以100rpm或更高的旋转速度使转台和每个气体喷嘴彼此相对旋转，以加速反应气体供应循环或反应产物的成膜循环。在已经产生的反应产物的晶粒尺寸由于已经产生的反应产物的结晶开始生长之后，沉积下一个反应产物的膜。

2. 发明申请

US20110061432A1 SURFACE TREATMENT METHOD, SHOWER HEAD, PROCESSING CONTAINER, AND PROCESSING APPARATUS USING THEM 审中-公开
标题翻译：表面处理方法，淋浴头，加工容器和使用它们的加工设备
公开(公告)号：US20110061432A1
公开(公告)日：2011-03-17
申请号：US12883833
申请日：2010-09-16
申请人： Takashi KAKEGAWA , Kensaku Narushima
发明人： Takashi KAKEGAWA , Kensaku Narushima
IPC分类号： C21D7/06
CPC分类号： B24C1/00 , B24C1/003 , B24C1/06 , B24C11/00 , C23C16/0254
摘要： The method of the present invention includes: a first blasting step of carrying out blasting of the surface of a metal base material, such as a shower head or a processing container, by using a blasting material composed of a non-sublimable material (e.g. alumina); and a second blasting step of carrying out blasting of the surface of the metal base material, which has undergone the first blasting step, by using a blasting material composed of a sublimable material (e.g. dry ice). The first blasting step properly roughens the surface of the metal base material so that a film, which adheres to the surface during film-forming processing, hardly peels off. In addition, the second blasting step almost fully removes the residual non-sublimable blasting material adhering to the surface of the metal base material, thereby preventing the generation of particles deriving from the residual non-sublimable blasting material falling off the metal base material.
摘要翻译：本发明的方法包括：通过使用由不可升华材料（例如氧化铝）构成的喷砂材料对喷淋头或加工容器等金属基材的表面进行喷砂的第一喷砂工序）; 以及通过使用由可升华材料（例如干冰）构成的喷砂材料对经过第一次喷砂步骤的金属基材的表面进行喷砂的第二喷砂步骤。第一喷砂步骤适当地使金属基材的表面粗糙化，使得在成膜加工过程中附着于表面的膜几乎不剥落。此外，第二喷砂步骤几乎完全除去附着在金属基材表面上的残余的不可升华的喷砂材料，从而防止从残留的非升华性喷砂材料衍生出的颗粒从金属基材上脱落。

3. 发明授权

US08334208B2 Film-forming method and film-forming apparatus 有权
标题翻译：成膜方法和成膜装置
公开(公告)号：US08334208B2
公开(公告)日：2012-12-18
申请号：US13158120
申请日：2011-06-10
申请人： Kensaku Narushima
发明人： Kensaku Narushima
IPC分类号： H01L21/3205
CPC分类号： H01L21/28556 , C23C14/14 , C23C16/04 , C23C16/045 , C23C16/4488 , C23C16/4557 , C23C16/5096 , H01L21/28518 , H01L21/76843 , H01L21/76865
摘要： A film forming method includes arranging a target substrate to be processed in a chamber; supplying a processing gas including a chlorine containing gas through a supply path to the chamber in which the target substrate is arranged; and arranging a Ti containing unit in the supply path of the processing gas and making a reaction between the chlorine containing gas of the processing gas and Ti of the Ti containing unit by bringing the chlorine containing gas into contact with the Ti containing unit, when the processing gas is supplied to the chamber. The method further includes depositing Ti on a surface of the target substrate by a thermal reaction by supplying to the target substrate a Ti precursor gas produced by the reaction between the chlorine containing gas and Ti of the Ti containing unit while heating the target substrate provided in the chamber.
摘要翻译：一种成膜方法，包括将待处理的目标基板布置在室中; 通过供给路径将包含含氯气体的处理气体供给到配置有所述目标基板的室内; 并且在加工气体的供给路径中配置含Ti单元，并且通过使含氯气体与含Ti单元接触，使处理气体的含氯气体与Ti容纳单元的Ti反应，处理气体被供应到室。该方法还包括通过热反应在目标衬底的表面上沉积Ti，通过向目标衬底提供通过含氯气体和含Ti单元的Ti之间的反应产生的Ti前体气体，同时加热设置在其中的目标衬底房间。

4. 发明授权

US08257790B2 Ti-containing film formation method and storage medium 有权
标题翻译：含Ti成膜方法和储存介质
公开(公告)号：US08257790B2
公开(公告)日：2012-09-04
申请号：US12280044
申请日：2007-02-21
申请人： Kensaku Narushima , Satoshi Wakabayashi , Kunihiro Tada
发明人： Kensaku Narushima , Satoshi Wakabayashi , Kunihiro Tada
IPC分类号： C23C16/00 , C23C16/06 , C23C16/08
CPC分类号： C23C16/14 , C23C8/36 , C23C16/4405 , C23C16/56
摘要： A Ti film is formed on a surface of a wafer W placed inside a chamber 31, while injecting a process gas containing TiCl4 gas into the chamber 31 from a showerhead 40 made of an Ni-containing material at least at a surface. The method includes performing formation of a Ti film on a predetermined number of wafers W while setting the showerhead 40 at a temperature of 300° C. or more and less than 450° C., and setting TiCl4 gas at a flow rate of 1 to 12 mL/min (sccm) or setting TiCl4 gas at a partial pressure of 0.1 to 2.5 Pa, and then, performing cleaning inside the chamber 31, while setting the showerhead 40 at a temperature of 200 to 300° C., and supplying ClF3 gas into the chamber 31.
摘要翻译：在设置在室31内的晶片W的表面上形成Ti膜，同时从至少在表面上由含Ni材料制成的喷头40将含有TiCl 4气体的处理气体注入到室31中。该方法包括在将喷头40设定在300℃以上且小于450℃的温度下，在规定数量的晶片W上形成Ti膜，将TiCl 4气体以1〜 12mL / min（sccm）或者在0.1-2.5Pa的分压下设置TiCl 4气体，然后在将喷头40设定在200〜300℃的温度的同时进行室31内的清洗，气体进入腔室31。

5. 发明申请

US20100304561A1 FILM FORMING METHOD AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：薄膜成型方法和基板加工设备
公开(公告)号：US20100304561A1
公开(公告)日：2010-12-02
申请号：US12445813
申请日：2007-08-07
申请人： Kensaku Narushima , Fumitaka Amano , Satoshi Wakabayashi
发明人： Kensaku Narushima , Fumitaka Amano , Satoshi Wakabayashi
IPC分类号： H01L21/285 , H05H1/00
CPC分类号： C23C16/34 , C23C16/14 , C23C16/45512 , C23C16/4554 , C23C16/45542 , H01L21/28518 , H01L21/28562 , H01L21/67207 , H01L21/76814 , H01L21/76843
摘要： A barrier layer including a titanium film is formed at a low temperature, and a TiSix film is self-conformably formed at the interface between the titanium film and the base. In forming the TiSix film 507, the following steps are repeated without introducing argon gas: a first step of introducing a titanium compound gas into the processing chamber to adsorb the titanium compound gas onto the silicon surface of a silicon substrate 502; a second step of stopping introduction of the titanium compound gas into the processing chamber and removing the titanium compound gas remaining in the processing chamber; and a third step of generating plasma in the processing chamber while introducing hydrogen gas into the processing chamber to reduce the titanium compound gas adsorbed on the silicon surface and react it with the silicon in the silicon surface to form the TiSix film 507.
摘要翻译：在低温下形成包含钛膜的阻挡层，并且在钛膜和基底之间的界面处自适应地形成TiSix膜。在形成TiSix膜507时，不引入氩气重复以下步骤：将钛化合物气体引入处理室以将钛化合物气体吸附到硅衬底502的硅表面上的第一步骤; 第二步，停止将钛化合物气体引入处理室并除去残留在处理室中的钛化合物气体; 以及在处理室中产生等离子体同时将氢气引入处理室中以减少吸附在硅表面上的钛化合物气体并与硅表面中的硅反应以形成TiSix膜507的第三步骤。

6. 发明申请

US20100081292A1 GAS TREATMENT METHOD AND COMPUTER READABLE STORAGE MEDIUM 有权
标题翻译：气体处理方法和计算机可读存储介质
公开(公告)号：US20100081292A1
公开(公告)日：2010-04-01
申请号：US11993506
申请日：2006-06-20
申请人： Kensaku Narushima , Satoshi Wakabayashi
发明人： Kensaku Narushima , Satoshi Wakabayashi
IPC分类号： H01L21/3105
CPC分类号： C23C8/24 , C23C8/26 , C23C8/36 , C23C8/38 , C23C14/00 , C23C16/14 , C23C16/4401 , C23C16/4404 , C23C16/56 , G11B5/84
摘要： A gas delivery apparatus comprises: a chamber surrounding a substrate to be processed; a showerhead disposed within the chamber; and gas supply means supplying a gas comprising a mixture of NH3 and H2 to the chamber, in which a coating layer deposited on the interior of the chamber and the showerhead contain nickel (Ni). When the apparatus is utilized to practice a method comprising exposing an object W to a gas comprising a mixture consisting of NH3 and H2, the H2/NH3 gas flow rate ratio and the temperature are controlled so that the reaction of nickel contained in the coating layer deposited on the interior of the chamber and the showerhead is suppressed.
摘要翻译：气体输送装置包括：围绕要处理的基板的室; 设置在室内的淋浴头; 以及气体供应装置，其将包含NH 3和H 2的混合物的气体供应到所述室中，其中沉积在所述室的内部的涂层和所述喷头包含镍（Ni）。当该装置用于实施包括将物体W暴露于包括由NH 3和H 2组成的混合物的气体的方法时，控制H 2 / NH 3气体流速比和温度，使得包含在涂层中的镍的反应沉积在室的内部并且喷头被抑制。

7. 发明申请

US20100227062A1 METHOD FOR FORMING Ti-BASED FILM AND STORAGE MEDIUM 有权
标题翻译：形成Ti基膜和储存介质的方法
公开(公告)号：US20100227062A1
公开(公告)日：2010-09-09
申请号：US12280044
申请日：2007-02-21
申请人： Kensaku Narushima , Satoshi Wakabayashi , Kunihiro Tada
发明人： Kensaku Narushima , Satoshi Wakabayashi , Kunihiro Tada
IPC分类号： C23C16/22
CPC分类号： C23C16/14 , C23C8/36 , C23C16/4405 , C23C16/56
摘要： A Ti film is formed on a surface of a wafer W placed inside a chamber 31, while injecting a process gas containing TiCl4 gas into the chamber 31 from a showerhead 40 made of an Ni-containing material at least at a surface. The method includes performing formation of a Ti film on a predetermined number of wafers W while setting the showerhead 40 at a temperature of 300° C. or more and less than 450° C., and setting TiCl4 gas at a flow rate of 1 to 12 mL/min (sccm) or setting TiCl4 gas at a partial pressure of 0.1 to 2.5 Pa, and then, performing cleaning inside the chamber 31, while setting the showerhead 40 at a temperature of 200 to 300° C., and supplying ClF3 gas into the chamber 31.
摘要翻译：在设置在室31内的晶片W的表面上形成Ti膜，同时从至少在表面上由含Ni材料制成的喷头40将含有TiCl 4气体的处理气体注入到室31中。该方法包括在将喷头40设定在300℃以上且小于450℃的温度下，在规定数量的晶片W上形成Ti膜，将TiCl 4气体以1〜 12mL / min（sccm）或者在0.1-2.5Pa的分压下设置TiCl 4气体，然后在将喷头40设定在200〜300℃的温度的同时进行室31内的清洗，气体进入腔室31。

8. 发明申请

US20070257372A1 Method for Forming Ti Film and Tin Film, Contact Structure, Computer Readable Storing Medium and Computer Program 失效
标题翻译：形成Ti膜和锡膜的方法，接触结构，计算机可读存储介质和计算机程序
公开(公告)号：US20070257372A1
公开(公告)日：2007-11-08
申请号：US11547977
申请日：2005-04-08
申请人： Kunihiro Tada , Kensaku Narushima , Satoshi Wakabayashi
发明人： Kunihiro Tada , Kensaku Narushima , Satoshi Wakabayashi
IPC分类号： H01L23/48 , H01L21/44
CPC分类号： H01L21/76846 , C23C16/0281 , C23C16/34 , H01J37/321 , H01L21/02063 , H01L21/28556 , H01L21/32051 , H01L21/76814 , H01L21/76856 , Y10S438/905 , Y10S438/906 , Y10S438/974
摘要： A cleaning process is performed on the surface of a nickel silicide film serving as an underlayer. Then, a Ti film is formed to have a film thickness of not less than 2 nm but less than 10 nm by CVD using a Ti compound gas. Then, the Ti film is nitrided. Then, a TiN film is formed on the Ti film thus nitrided, by CVD using a Ti compound gas and a gas containing N and H.
摘要翻译：在作为底层的硅化镍膜的表面上进行清洁处理。然后，通过使用Ti化合物气体的CVD，形成具有不小于2nm但小于10nm的膜厚度的Ti膜。然后，将Ti膜氮化。然后，通过使用Ti化合物气体和含有N和H的气体的CVD，在Ti膜上形成TiN膜。

9. 发明申请

US20050233093A1 Film formation method and apparatus utilizing plasma CVD 审中-公开
标题翻译：利用等离子体CVD的成膜方法和装置
公开(公告)号：US20050233093A1
公开(公告)日：2005-10-20
申请号：US11143718
申请日：2005-06-03
申请人： Kunihiro Tada , Hiroaki Yokoi , Satoshi Wakabayashi , Kensaku Narushima
发明人： Kunihiro Tada , Hiroaki Yokoi , Satoshi Wakabayashi , Kensaku Narushima
IPC分类号： C23C16/14 , C23C16/34 , C23C16/44 , C23C16/455 , C23C16/50 , H01L21/28 , H01L21/285 , H05H1/24 , C23C16/00
CPC分类号： C23C16/45523 , C23C16/4408 , C23C16/50 , H01L21/28562
摘要： A film formation method to form a predetermined thin film on a target substrate includes first and second steps alternately performed each at least once. The first step is arranged to generate first plasma within a process chamber that accommodates the substrate while supplying a compound gas containing a component of the thin film and a reducing gas into the process chamber. The second step is arranged to generate second plasma within the process chamber while supplying the reducing gas into the process chamber, subsequently to the first step.
摘要翻译：在目标衬底上形成预定薄膜的成膜方法包括：至少一次交替执行的第一和第二步骤。第一步被布置成在处理室内产生第一等离子体，该等离子体容纳基板，同时将含有薄膜组分的还原气体和还原气体供应到处理室中。第二步骤被布置成在处理室内产生第二等离子体，同时在第一步骤之后将还原气体供应到处理室中。

10. 发明授权

US08263181B2 Ti-based film forming method and storage medium 有权
标题翻译： Ti基成膜方法和存储介质
公开(公告)号：US08263181B2
公开(公告)日：2012-09-11
申请号：US12426047
申请日：2009-04-17
申请人： Kensaku Narushima , Satoshi Wakabayashi , Takamitsu Takayama
发明人： Kensaku Narushima , Satoshi Wakabayashi , Takamitsu Takayama
IPC分类号： C23C16/06
CPC分类号： C23C16/4404 , C23C16/14 , C23C16/4405 , C23C16/45565 , C23C16/56 , H01L21/28556
摘要： A Ti-based film forming method includes a step (step 1) of cleaning inside a chamber by introducing a cleaning gas containing fluorine into the chamber in a state where a wafer W is not provided on a susceptor; a step (step 2) of heating the susceptor in a state where the wafer W is not provided on the susceptor, injecting a processing gas containing Ti from a shower head into the chamber, and forming a pre-coated film at least on the surface of the shower head; and a step (step 3) of mounting the wafer W on the susceptor 2 in a state where the susceptor is heated, supplying a processing gas into the chamber 1 and forming a Ti-based film on the wafer W. The pre-coated film forming step is performed at a temperature lower than that in the film forming step.
摘要翻译： Ti系成膜方法包括：在不在基座上设置晶片W的状态下，通过将含有氟的清洗气体引入到室内的室内进行清洗的工序（工序1）在不在基座上设置晶片W的状态下加热基座的步骤（步骤2），将来自喷淋头的含Ti的处理气体注入到室内，并且至少在表面上形成预涂膜的淋浴头; 以及在加热基座的状态下将晶片W安装在基座2上的步骤（步骤3），将处理气体供给到室1中，并在晶片W上形成Ti基膜。预涂膜在低于成膜步骤的温度下进行形成步骤。

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