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1. 发明授权

US08721790B2 Film deposition apparatus 有权
标题翻译：膜沉积装置
公开(公告)号：US08721790B2
公开(公告)日：2014-05-13
申请号：US12963673
申请日：2010-12-09
申请人： Hitoshi Kato , Manabu Honma , Kohichi Orito , Yasushi Takeuchi , Hiroyuki Kikuchi
发明人： Hitoshi Kato , Manabu Honma , Kohichi Orito , Yasushi Takeuchi , Hiroyuki Kikuchi
IPC分类号： C23C16/453 , C23C16/455 , C23C16/458 , H01L21/306 , C23F1/00 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45551 , C23C16/4412 , C23C16/45521 , C23C16/45578
摘要： A film deposition apparatus includes a turntable provided in the chamber and having on a first surface a substrate receiving area in which a substrate is placed; first and second reaction gas supplying portions supplying first and second reaction gases to the first surface, respectively; a separation gas supplying portion provided between the first reaction gas supplying portion and the second reaction gas supplying portion and supplying a separation gas that separates the first reaction gas and the second reaction gas; an evacuation port that evacuates the chamber; a space defining member provided for at least one of the first and second reaction gas supplying portions and defining a first space between the at least one of the first and second reaction gas supplying portions and the turntable and a second space so that the separation gas is likely to flow through the second space rather than the first space.
摘要翻译：一种成膜装置，包括设置在所述室中并在第一表面上具有放置基板的基板接收区域的转盘; 分别向第一表面供应第一和第二反应气体的第一和第二反应气体供应部分; 分离气体供给部，设置在第一反应气体供给部和第二反应气体供给部之间，供给分离第一反应气体和第二反应气体的分离气体; 疏散室的疏散口; 设置在所述第一反应气体供给部和所述第二反应气体供给部中的至少一个的空间限定部件，在所述第一反应气体供给部和所述第二反应气体供给部中的至少一个与所述转台之间形成第一空间，可能流经第二空间而不是第一空间。

2. 发明申请

US20110139074A1 FILM DEPOSITION APPARATUS 有权
标题翻译：胶片沉积装置
公开(公告)号：US20110139074A1
公开(公告)日：2011-06-16
申请号：US12963673
申请日：2010-12-09
申请人： HITOSHI KATO , Manabu Honma , Kohichi Orito , Yasushi Takeuchi , Hiroyuki Kikuchi
发明人： HITOSHI KATO , Manabu Honma , Kohichi Orito , Yasushi Takeuchi , Hiroyuki Kikuchi
IPC分类号： C23C16/458 , C23C16/00
CPC分类号： C23C16/45551 , C23C16/4412 , C23C16/45521 , C23C16/45578
摘要： A film deposition apparatus includes a turntable provided in the chamber and having on a first surface a substrate receiving area in which a substrate is placed; first and second reaction gas supplying portions supplying first and second reaction gases to the first surface, respectively; a separation gas supplying portion provided between the first reaction gas supplying portion and the second reaction gas supplying portion and supplying a separation gas that separates the first reaction gas and the second reaction gas; an evacuation port that evacuates the chamber; a space defining member provided for at least one of the first and second reaction gas supplying portions and defining a first space between the at least one of the first and second reaction gas supplying portions and the turntable and a second space so that the separation gas is likely to flow through the second space rather than the first space.
摘要翻译：一种成膜装置，包括设置在所述室中并在第一表面上具有放置基板的基板接收区域的转盘; 分别向第一表面供应第一和第二反应气体的第一和第二反应气体供应部分; 分离气体供给部，设置在第一反应气体供给部和第二反应气体供给部之间，供给分离第一反应气体和第二反应气体的分离气体; 疏散室的疏散口; 设置在所述第一反应气体供给部和所述第二反应气体供给部中的至少一个的空间限定部件，在所述第一反应气体供给部和所述第二反应气体供给部中的至少一个与所述转台之间形成第一空间，可能流经第二空间而不是第一空间。

3. 发明申请

US20100116210A1 GAS INJECTOR AND FILM DEPOSITION APPARATUS 审中-公开
标题翻译：气体注射器和膜沉积装置
公开(公告)号：US20100116210A1
公开(公告)日：2010-05-13
申请号：US12615311
申请日：2009-11-10
申请人： HITOSHI KATO , Yasushi Takeuchi , Manabu Honma , Hiroyuki Kikuchi
发明人： HITOSHI KATO , Yasushi Takeuchi , Manabu Honma , Hiroyuki Kikuchi
IPC分类号： C23C16/00 , B05B1/14
CPC分类号： C23C16/45551 , B05B1/20 , B05B1/267 , B05B13/0242 , C23C16/45523 , C23C16/45578 , C23C16/4584
摘要： An injector body of a gas injector has a gas inlet and a gas passage; plural gas outflow openings disposed on a wall part of the injector body along a longitudinal direction of the injector body; and a guide member that provides a slit-shaped gas discharge opening extending in the longitudinal direction of the injector body on an outer surface of the injector body, and guides gas flowing from the gas outflow openings to the gas discharge opening.
摘要翻译：气体喷射器的喷射器主体具有气体入口和气体通道; 多个气体流出开口，沿着喷射器主体的长度方向设置在喷射器主体的壁部上; 以及引导构件，其在所述喷射器主体的外表面上提供沿所述喷射器主体的纵向方向延伸的狭缝状气体排出口，并且引导从所述气体流出口流到所述气体排出口的气体。

4. 发明申请

US20120222615A1 FILM DEPOSITION APPARATUS 审中-公开
标题翻译：胶片沉积装置
公开(公告)号：US20120222615A1
公开(公告)日：2012-09-06
申请号：US13221188
申请日：2011-08-30
申请人： Hitoshi KATO , Tsuneyuki Okabe , Manabu Honma , Takeshi Kumagai , Yasushi Takeuchi
发明人： Hitoshi KATO , Tsuneyuki Okabe , Manabu Honma , Takeshi Kumagai , Yasushi Takeuchi
IPC分类号： C23C16/455
CPC分类号： H01L21/68764 , C23C16/45551 , H01L21/68771
摘要： A film deposition apparatus includes a first turntable including at least ten substrate receiving areas that receive corresponding 300 mm substrates; a first reaction gas supplying portion arranged in a first area inside the chamber to supply a first reaction gas; a second reaction gas supplying portion arranged in a second area away from the first reaction gas supplying portion along the rotation direction of the first turntable to supply a second reaction gas; and a separation area arranged between the first and the second areas. The separation area includes a separation gas supplying portion that supplies a separation gas that separates the first reaction and the second reaction gases, and a ceiling surface having a height so that a pressure in a space between the ceiling surface and the first turntable is higher with the separation gas than pressures in the first and the second areas.
摘要翻译：一种成膜装置包括：第一转盘，其包括至少十个接收对应的300mm基板的基板接收区域; 第一反应气体供给部，其布置在所述室内的第一区域中，以供应第一反应气体; 第二反应气体供给部，其沿着第一转台的旋转方向配置在远离第一反应气体供给部的第二区域，供给第二反应气体; 以及布置在第一和第二区域之间的分离区域。分离区域包括供给分离第一反应和第二反应气体的分离气体的分离气体供给部以及具有使顶棚面与第一转台之间的空间内的压力较高的高度的顶面，分离气体而不是第一和第二区域中的压力。

5. 发明申请

US20110159187A1 FILM DEPOSITION APPARATUS AND FILM DEPOSITION METHOD 审中-公开
标题翻译：膜沉积装置和膜沉积方法
公开(公告)号：US20110159187A1
公开(公告)日：2011-06-30
申请号：US12969757
申请日：2010-12-16
申请人： Hitoshi KATO , Manabu Honma , Yasushi Takeuchi
发明人： Hitoshi KATO , Manabu Honma , Yasushi Takeuchi
IPC分类号： C23C16/448 , C23C16/455 , C23C16/458 , C23C16/52
CPC分类号： H01L21/0228 , C23C16/45544 , C23C16/45548 , C23C16/45557 , C23C16/45563 , C23C16/45591 , C23C16/4585 , H01L21/67706
摘要： A film deposition apparatus includes a separation member that extends to cover a rotation center of the turntable and two different points on a circumference of the turntable above the turntable, thereby separating the inside of the chamber into a first area and a second area; a first reaction gas supplying portion that supplies a first reaction gas toward the turntable in the first area; a second reaction gas supplying portion that supplies a second reaction gas toward the turntable in the second area; a first evacuation port that evacuates the first reaction gas and the first separation gas that converges with the first reaction gas; and a second evacuation port that evacuates the second reaction gas and the first separation gas that converges with the second reaction gas.
摘要翻译：一种成膜装置，包括：分离部件，该分离部件延伸以覆盖转台的旋转中心，并且在转盘上方的转盘的圆周上的两个不同点，从而将腔室的内部分离成第一区域和第二区域; 第一反应气体供给部，其向第一区域内的转台供给第一反应气体; 第二反应气体供给部，其向第二区域的转台供给第二反应气体; 排出第一反应气体和与第一反应气体会聚的第一分离气体的第一排气口; 以及抽出第二反应气体和与第二反应气体会聚的第一分离气体的第二排气口。

6. 发明申请

US20100055347A1 ACTIVATED GAS INJECTOR, FILM DEPOSITION APPARATUS, AND FILM DEPOSITION METHOD 有权
标题翻译：活性气体注射器，膜沉积装置和膜沉积方法
公开(公告)号：US20100055347A1
公开(公告)日：2010-03-04
申请号：US12547648
申请日：2009-08-26
申请人： HITOSHI KATO , Yasushi Takeuchi , Shigehiro Ushikubo , Hiroyuki Kikuchi
发明人： HITOSHI KATO , Yasushi Takeuchi , Shigehiro Ushikubo , Hiroyuki Kikuchi
IPC分类号： C23C16/50 , H05H1/24 , C23C16/00
CPC分类号： H01J37/32559 , C23C16/452 , C23C16/45517 , C23C16/45536 , C23C16/45551 , C23C16/45563 , C23C16/45565 , C23C16/45578 , C23C16/4584 , C23C16/50 , C23C16/505 , C23C16/509 , C23C16/5093 , H01J1/00 , H01J37/3244 , H01J37/32449
摘要： An activated gas injector includes a flow passage defining member partitioned into a gas activation passage and a gas introduction passage by a partition wall; a gas introduction port through which a process gas is introduced into the gas introduction passage; a pair of electrodes to be supplied with electrical power to activate the process gas, wherein the electrodes extend along the partition wall in the gas activation passage; through-holes formed in the partition wall and arranged along a longitudinal direction of the electrodes, wherein the through-holes allow the process gas to flow from the gas introduction passage to the gas activation passage; and gas ejection holes provided in the gas activation passage along the longitudinal direction of the electrodes, wherein the gas ejection holes allow the process gas activated in the gas activation passage to be ejected therefrom.
摘要翻译：活性气体喷射器包括分隔成气体激活通道的流动通道限定部件和通过分隔壁的气体引入通道; 气体导入口，通过该气体导入口将工艺气体引入到气体导入通路内; 一对电极被供电以激活处理气体，其中电极沿着气体激活通道中的分隔壁延伸; 所述通孔形成在所述分隔壁上并且沿着所述电极的纵向方向布置，其中所述通孔允许所述工艺气体从所述气体引入通道流到所述气体激活通道; 以及沿着电极的纵向方向设置在气体致动通道中的气体喷射孔，其中气体喷射孔允许从气体激活通道中激活的处理气体从其喷射。

7. 发明授权

US09053909B2 Activated gas injector, film deposition apparatus, and film deposition method 有权
标题翻译：活性气体注入器，成膜装置和成膜方法
公开(公告)号：US09053909B2
公开(公告)日：2015-06-09
申请号：US12547648
申请日：2009-08-26
申请人： Hitoshi Kato , Yasushi Takeuchi , Shigehiro Ushikubo , Hiroyuki Kikuchi
发明人： Hitoshi Kato , Yasushi Takeuchi , Shigehiro Ushikubo , Hiroyuki Kikuchi
IPC分类号： C23C16/50 , C23C16/505 , C23C16/509 , H01J37/32 , C23C16/455 , C23C16/452 , C23C16/458 , C23C16/06 , C23C16/22 , H01J1/00
CPC分类号： H01J37/32559 , C23C16/452 , C23C16/45517 , C23C16/45536 , C23C16/45551 , C23C16/45563 , C23C16/45565 , C23C16/45578 , C23C16/4584 , C23C16/50 , C23C16/505 , C23C16/509 , C23C16/5093 , H01J1/00 , H01J37/3244 , H01J37/32449
摘要： An activated gas injector includes a flow passage defining member partitioned into a gas activation passage and a gas introduction passage by a partition wall; a gas introduction port through which a process gas is introduced into the gas introduction passage; a pair of electrodes to be supplied with electrical power to activate the process gas, wherein the electrodes extend along the partition wall in the gas activation passage; through-holes formed in the partition wall and arranged along a longitudinal direction of the electrodes, wherein the through-holes allow the process gas to flow from the gas introduction passage to the gas activation passage; and gas ejection holes provided in the gas activation passage along the longitudinal direction of the electrodes, wherein the gas ejection holes allow the process gas activated in the gas activation passage to be ejected therefrom.
摘要翻译：活性气体喷射器包括分隔成气体激活通道的流动通道限定部件和通过分隔壁的气体引入通道; 气体导入口，通过该气体导入口将工艺气体引入到气体导入通路内; 一对电极被供电以激活处理气体，其中电极沿着气体激活通道中的分隔壁延伸; 所述通孔形成在所述分隔壁上并且沿着所述电极的纵向方向布置，其中所述通孔允许所述工艺气体从所述气体引入通道流到所述气体激活通道; 以及沿着电极的纵向方向设置在气体致动通道中的气体喷射孔，其中气体喷射孔允许从气体激活通道中激活的处理气体从其喷射。

8. 发明授权

US08951347B2 Film deposition apparatus 有权
标题翻译：膜沉积装置
公开(公告)号：US08951347B2
公开(公告)日：2015-02-10
申请号：US13128908
申请日：2009-11-13
申请人： Hitoshi Kato , Yasushi Takeuchi
发明人： Hitoshi Kato , Yasushi Takeuchi
IPC分类号： C23C16/455 , C23C16/458 , H01L21/306 , C23F1/00 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45551 , C23C16/45519 , C23C16/45578 , C23C16/45591
摘要： A film deposition apparatus is provided with a gas nozzle in which ejection holes that eject a reaction gas are formed along a longitudinal direction of the gas nozzle, and a flow regulation member that protrudes from the gas nozzle in either one of upstream and downstream directions of a rotation direction of a turntable. In such a configuration, a separation gas flowing from an upstream side of the rotation direction to the gas nozzle is restricted from flowing between the gas nozzle and the turntable on which a substrate is placed, and the reaction gas flowing upward from the turntable is restricted by the separation gas, thereby impeding a reaction gas concentration in a process area from being lowered.
摘要翻译：一种成膜装置设置有气体喷嘴，其中沿着气体喷嘴的纵向方向形成喷射反应气体的喷射孔，以及流量调节构件，其从上游和下游方向中的任一个中的气体喷嘴突出转台的旋转方向。在这种构造中，从旋转方向的上游侧流向气体喷嘴的分离气体被限制在气体喷嘴与放置基板的转盘之间的流动，并且从转台向上流动的反应气体受到限制通过分离气体，从而阻止处理区域中的反应气体浓度降低。

9. 发明申请

US20120076937A1 FILM DEPOSITION DEVICE AND FILM DEPOSITION METHOD 审中-公开
标题翻译：薄膜沉积装置和薄膜沉积方法
公开(公告)号：US20120076937A1
公开(公告)日：2012-03-29
申请号：US13237999
申请日：2011-09-21
申请人： Hitoshi KATO , Yasushi Takeuchi
发明人： Hitoshi KATO , Yasushi Takeuchi
IPC分类号： C23C16/455 , C23C16/458
CPC分类号： C23C16/45551 , Y02T50/67
摘要： A film deposition device includes a chamber, a turntable, a first reactive gas supplying portion, a second reactive gas supplying portion, and a separation gas supplying portion. A convex part includes a ceiling surface to cover both sides of the separation gas supplying portion, form a first space between the ceiling surface and the turntable where a separation gas flows, and form a separation area between a first area and a second area, to maintain a pressure in the first space to be higher than pressures in the first area and the second area so that a first reactive gas and a second reactive gas are separated by the separation gas in the separation area. A block member is arranged to form a second space between the turntable and an internal surface of the chamber at an upstream part of the separation area along a rotation direction of the turntable.
摘要翻译：膜沉积装置包括腔室，转台，第一反应气体供应部分，第二反应气体供应部分和分离气体供应部分。凸部包括覆盖分离气体供给部的两侧的顶面，在分离气体流动的顶棚面与转台之间形成第一空间，在第一区域与第二区域之间形成分离区域，保持第一空间中的压力高于第一区域和第二区域中的压力，使得第一反应气体和第二反应气体由分离区域中的分离气体分离。块体构件被布置成沿着转台的旋转方向在分离区域的上游部分处在转台和腔室的内表面之间形成第二空间。

10. 发明申请

US20120088030A1 FILM FORMING APPARATUS, FILM FORMING METHOD, AND RECORDING MEDIUM 审中-公开
标题翻译：胶片成型装置，成膜方法和记录介质
公开(公告)号：US20120088030A1
公开(公告)日：2012-04-12
申请号：US13238366
申请日：2011-09-21
申请人： Hitoshi KATO , Yasushi Takeuchi
发明人： Hitoshi KATO , Yasushi Takeuchi
IPC分类号： C23C16/455 , C23C16/52 , C23C16/458
CPC分类号： C23C16/45551
摘要： A film forming apparatus that produces a thin film by repeating cycles of sequentially supplying reaction gases including a loading table in a vacuum vessel having substrate mounting areas; reaction gas supplying units arranged in a peripheral direction with intervals to supply the reaction gases onto substrates; separating areas separating atmospheres of the processing areas; separation gas supplying units supplying separation gases to render a supply amount to outer peripheral side separation areas greater than a supply amount to center side separation areas; a ceiling face surrounding narrow areas together with the loading table to enable the separation gases flow from the separating areas to the processing areas along the center side separation areas and the outer peripheral side separation areas a vacuum ejecting mechanism; and a rotary mechanism rotating the loading table relative to the reaction gas supplying units and the separating areas.
摘要翻译：一种成膜装置，其通过重复在具有基板安装区域的真空容器中依次供给包括装载台的反应气体的循环来生产薄膜; 反应气体供给单元，其周向排列成间隔，将反应气体供给到基板上; 分离分离处理区域的气氛的区域; 分离气体供给单元，其供给分离气体，使外周侧分离区域的供给量大于中央侧分离区域的供给量; 与收纳台一起围绕狭窄区域的天花板面，使得分离气体能够从分离区域流向沿着中心侧分离区域和外周侧分离区域的处理区域的真空喷射机构; 以及使装载台相对于反应气体供给单元和分离区域旋转的旋转机构。

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