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    • 1. 发明授权
    • Film formation method and apparatus for semiconductor process
    • 用于半导体工艺的成膜方法和装置
    • US07637268B2
    • 2009-12-29
    • US11454939
    • 2006-06-19
    • Hitoshi KatoKazumi KuboMasahiko Kaminishi
    • Hitoshi KatoKazumi KuboMasahiko Kaminishi
    • C25F1/00C25F3/00C25F5/00
    • C23C16/0227C23C16/24
    • In a film formation method for a semiconductor process, a target substrate having a target surface with a natural oxide film is loaded into a reaction chamber, while setting the reaction chamber at a load temperature lower than a threshold temperature at which the natural oxide film starts being stabilized. Then, the natural oxide film is removed by etching, while supplying an etching gas containing chlorine without containing fluorine, and setting the reaction chamber at an etching pressure and an etching temperature lower than the threshold temperature. Then, the reaction chamber is purged. Then, a thin film is formed on the target surface by CVD, while supplying a film formation gas, and setting the reaction chamber at a film formation temperature.
    • 在半导体工艺的成膜方法中,将具有自然氧化膜的目标表面的目标基板装载到反应室中,同时将反应室设定在低于自然氧化膜起始的阈值温度的负载温度 稳定下来 然后,通过蚀刻除去自然氧化物膜,同时在不含氟的情况下提供含氯的蚀刻气体,并将反应室设定在低于阈值温度的蚀刻压力和蚀刻温度。 然后,反应室被清除。 然后,通过CVD在目标表面上形成薄膜,同时供给成膜气体,并将反应室设定在成膜温度。
    • 3. 发明授权
    • Film deposition apparatus
    • 膜沉积装置
    • US09297072B2
    • 2016-03-29
    • US12620750
    • 2009-11-18
    • Hitoshi KatoManabu Honma
    • Hitoshi KatoManabu Honma
    • C23C16/455H01L21/677H01L21/67C23C16/40
    • C23C16/4551C23C16/402C23C16/45551C23C16/45578H01L21/6719H01L21/67703
    • A film deposition apparatus includes a rotary table having a substrate placement area to support a substrate, a vacuum container including a container and a top panel, an open-and-close mechanism configured to open and close the top panel, reactant gas nozzles disposed through and supported by an outer wall of the container to be situated at different angular positions with respect to a rotation center of the rotary table to face areas in which the substrate placement area passes, the reactant gas nozzles having gas discharge ports arranged in radial directions to supply respective reactant gases to the wafer thereby to form respective process areas, a discharge gas supply unit situated at an angular position between the process areas to supply purge gas to form an isolation area that isolates atmospheres of the process areas from each other, and an exhaustion unit configured to exhaust atmosphere inside the vacuum container.
    • 一种成膜装置,包括具有用于支撑基板的基板放置区域的旋转台,包括容器和顶板的真空容器,构造成打开和关闭顶板的开闭机构,布置成穿过的反应气体喷嘴 并且由所述容器的外壁支撑,以相对于所述旋转台的旋转中心位于不同的角度位置,以面对所述基板放置区域通过的区域,所述反应气体喷嘴具有沿径向布置的气体排出口, 将相应的反应气体供应到晶片,从而形成相应的处理区域,放电气体供应单元位于处理区域之间的角位置处,以供应净化气体,以形成隔离区域,隔离区域将过程区域的气氛彼此隔离;以及 排气单元构造成排出真空容器内的气氛。
    • 4. 发明授权
    • Film deposition apparatus
    • 膜沉积装置
    • US09103030B2
    • 2015-08-11
    • US12627144
    • 2009-11-30
    • Hitoshi KatoManabu Honma
    • Hitoshi KatoManabu Honma
    • C23C16/00C23C16/455C23C16/44C23C16/40
    • C23C16/45551C23C16/402C23C16/4412C23C16/45578
    • In a film deposition apparatus, a first separation gas is discharged from a separation gas supplying portion to a separation area between a first process area to which a first reaction gas is supplied and a second process area to which a second reaction gas is supplied. A heater is provided to heat the turntable by radiation heat. An outer sidewall member is provided in a bottom part of a vacuum chamber to surround the turntable in an area where the heater is provided. A space forming member is provided between the separation areas adjacent to each other in a rotating direction of the turntable and extending from the outer sidewall member to form a narrow space between the turntable. A purge gas flows from a lower side of the turntable to an area outside the turntable in a radial direction through the narrow space.
    • 在成膜装置中,第一分离气体从分离气体供给部排出到供给第一反应气体的第一处理区域和供给第二反应气体的第二处理区域之间的分离区域。 提供加热器以通过辐射热来加热转台。 外侧壁构件设置在真空室的底部,以在设置加热器的区域中围绕转台。 空间形成构件设置在转台的旋转方向上彼此相邻的分隔区域之间并且从外侧壁构件延伸以在转台之间形成狭窄的空间。 吹扫气体从转台的下侧流过转台的外侧,通过狭窄的空间沿径向流动。
    • 5. 发明授权
    • Film deposition apparatus
    • 膜沉积装置
    • US09093490B2
    • 2015-07-28
    • US12713317
    • 2010-02-26
    • Hitoshi KatoManabu HonmaHiroyuki Kikuchi
    • Hitoshi KatoManabu HonmaHiroyuki Kikuchi
    • C23C16/455C23C16/40H01L21/677H01L21/687
    • H01L21/68764C23C16/402C23C16/45551C23C16/45578C23C16/45589H01L21/68771
    • A disclosed film deposition apparatus for depositing a film on a substrate by supplying a reaction gas to an upper surface of the substrate in a vacuum chamber includes a susceptor provided in the vacuum chamber, wherein substrate receiving areas are formed along a circle whose center lies in a center portion of the susceptor; a main gas supplying portion provided opposing the susceptor in order to supply the reaction gas to the substrate receiving areas of the susceptor; a compensation gas supplying portion configured to supply the reaction gas to an upper surface of the susceptor in order to compensate for concentration of the reaction gas supplied from the main gas supplying portion along a radius direction of the susceptor; and a rotation mechanism configured to rotate the susceptor relative to the main gas supplying portion and the compensation gas supplying portion around the center portion of the susceptor.
    • 公开的一种用于在真空室中将反应气体提供给基板的上表面的基板上沉积薄膜的薄膜沉积装置包括设置在真空室中的基座,其中基板接收区域沿着中心位于 基座的中心部分; 主气体供给部,其与所述基座相对设置,以将所述反应气体供应到所述基座的所述基板接收区域; 补偿气体供给部,其构造成将反应气体供给到所述基座的上表面,以补偿从所述主气体供给部沿着所述基座的半径方向供给的反应气体的浓度; 以及旋转机构,其构造成使所述基座相对于所述主气体供给部和所述补偿气体供给部围绕所述基座的中心部旋转。
    • 8. 发明授权
    • Film deposition apparatus and substrate processing apparatus
    • 薄膜沉积装置和基板处理装置
    • US08673079B2
    • 2014-03-18
    • US12550453
    • 2009-08-31
    • Hitoshi KatoManabu HonmaTomoki Haneishi
    • Hitoshi KatoManabu HonmaTomoki Haneishi
    • C23C16/455C23C16/00
    • C23C16/45551C23C16/401C23C16/45502C23C16/45508C23C16/4583
    • A film deposition apparatus includes: a turntable; a first reaction gas supply part and a second reaction gas supply part extending from a circumferential edge toward a rotation center of the turntable; and a first separation gas supply part provided between the first and second reaction gas supply parts. A first space contains the first reaction gas supply part and has a first height. A second space contains the second reaction gas supply part and has a second height. A third space contains a first separation gas supply part and has a height lower than the first and second heights. A motor provided under the rotation center of the turntable rotates the turntable. A rotation shaft of the turntable and a drive shaft of the motor are coupled without generation of slip.
    • 成膜装置包括:转台; 第一反应气体供给部和第二反应气体供给部,其从周缘朝向转台的旋转中心延伸; 以及设置在第一和第二反应气体供给部之间的第一分离气体供给部。 第一空间包含第一反应气体供应部分并且具有第一高度。 第二空间包含第二反应气体供应部分并且具有第二高度。 第三空间包含第一分离气体供应部分,并且具有低于第一和第二高度的高度。 设置在转台的旋转中心下方的电动机使转台旋转。 转盘的旋转轴和电动机的驱动轴联接而不产生滑移。