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1. 发明授权

US07637268B2 Film formation method and apparatus for semiconductor process 有权
标题翻译：用于半导体工艺的成膜方法和装置
公开(公告)号：US07637268B2
公开(公告)日：2009-12-29
申请号：US11454939
申请日：2006-06-19
申请人： Hitoshi Kato , Kazumi Kubo , Masahiko Kaminishi
发明人： Hitoshi Kato , Kazumi Kubo , Masahiko Kaminishi
IPC分类号： C25F1/00 , C25F3/00 , C25F5/00
CPC分类号： C23C16/0227 , C23C16/24
摘要： In a film formation method for a semiconductor process, a target substrate having a target surface with a natural oxide film is loaded into a reaction chamber, while setting the reaction chamber at a load temperature lower than a threshold temperature at which the natural oxide film starts being stabilized. Then, the natural oxide film is removed by etching, while supplying an etching gas containing chlorine without containing fluorine, and setting the reaction chamber at an etching pressure and an etching temperature lower than the threshold temperature. Then, the reaction chamber is purged. Then, a thin film is formed on the target surface by CVD, while supplying a film formation gas, and setting the reaction chamber at a film formation temperature.
摘要翻译：在半导体工艺的成膜方法中，将具有自然氧化膜的目标表面的目标基板装载到反应室中，同时将反应室设定在低于自然氧化膜起始的阈值温度的负载温度稳定下来然后，通过蚀刻除去自然氧化物膜，同时在不含氟的情况下提供含氯的蚀刻气体，并将反应室设定在低于阈值温度的蚀刻压力和蚀刻温度。然后，反应室被清除。然后，通过CVD在目标表面上形成薄膜，同时供给成膜气体，并将反应室设定在成膜温度。

2. 发明申请

US20060288935A1 Film formation method and apparatus for semiconductor process 有权
公开(公告)号：US20060288935A1
公开(公告)日：2006-12-28
申请号：US11454939
申请日：2006-06-19
申请人： Hitoshi Kato , Kazumi Kubo , Masahiko Kaminishi
发明人： Hitoshi Kato , Kazumi Kubo , Masahiko Kaminishi
IPC分类号： C23C16/00 , B44C1/22 , C03C25/68 , G06F19/00
CPC分类号： C23C16/0227 , C23C16/24
摘要： In a film formation method for a semiconductor process, a target substrate having a target surface with a natural oxide film is loaded into a reaction chamber, while setting the reaction chamber at a load temperature lower than a threshold temperature at which the natural oxide film starts being stabilized. Then, the natural oxide film is removed by etching, while supplying an etching gas containing chlorine without containing fluorine, and setting the reaction chamber at an etching pressure and an etching temperature lower than the threshold temperature. Then, the reaction chamber is purged. Then, a thin film is formed on the target surface by CVD, while supplying a film formation gas, and setting the reaction chamber at a film formation temperature.

3. 发明授权

US09297072B2 Film deposition apparatus 有权
标题翻译：膜沉积装置
公开(公告)号：US09297072B2
公开(公告)日：2016-03-29
申请号：US12620750
申请日：2009-11-18
申请人： Hitoshi Kato , Manabu Honma
发明人： Hitoshi Kato , Manabu Honma
IPC分类号： C23C16/455 , H01L21/677 , H01L21/67 , C23C16/40
CPC分类号： C23C16/4551 , C23C16/402 , C23C16/45551 , C23C16/45578 , H01L21/6719 , H01L21/67703
摘要： A film deposition apparatus includes a rotary table having a substrate placement area to support a substrate, a vacuum container including a container and a top panel, an open-and-close mechanism configured to open and close the top panel, reactant gas nozzles disposed through and supported by an outer wall of the container to be situated at different angular positions with respect to a rotation center of the rotary table to face areas in which the substrate placement area passes, the reactant gas nozzles having gas discharge ports arranged in radial directions to supply respective reactant gases to the wafer thereby to form respective process areas, a discharge gas supply unit situated at an angular position between the process areas to supply purge gas to form an isolation area that isolates atmospheres of the process areas from each other, and an exhaustion unit configured to exhaust atmosphere inside the vacuum container.
摘要翻译：一种成膜装置，包括具有用于支撑基板的基板放置区域的旋转台，包括容器和顶板的真空容器，构造成打开和关闭顶板的开闭机构，布置成穿过的反应气体喷嘴并且由所述容器的外壁支撑，以相对于所述旋转台的旋转中心位于不同的角度位置，以面对所述基板放置区域通过的区域，所述反应气体喷嘴具有沿径向布置的气体排出口，将相应的反应气体供应到晶片，从而形成相应的处理区域，放电气体供应单元位于处理区域之间的角位置处，以供应净化气体，以形成隔离区域，隔离区域将过程区域的气氛彼此隔离;以及排气单元构造成排出真空容器内的气氛。

4. 发明授权

US09103030B2 Film deposition apparatus 有权
标题翻译：膜沉积装置
公开(公告)号：US09103030B2
公开(公告)日：2015-08-11
申请号：US12627144
申请日：2009-11-30
申请人： Hitoshi Kato , Manabu Honma
发明人： Hitoshi Kato , Manabu Honma
IPC分类号： C23C16/00 , C23C16/455 , C23C16/44 , C23C16/40
CPC分类号： C23C16/45551 , C23C16/402 , C23C16/4412 , C23C16/45578
摘要： In a film deposition apparatus, a first separation gas is discharged from a separation gas supplying portion to a separation area between a first process area to which a first reaction gas is supplied and a second process area to which a second reaction gas is supplied. A heater is provided to heat the turntable by radiation heat. An outer sidewall member is provided in a bottom part of a vacuum chamber to surround the turntable in an area where the heater is provided. A space forming member is provided between the separation areas adjacent to each other in a rotating direction of the turntable and extending from the outer sidewall member to form a narrow space between the turntable. A purge gas flows from a lower side of the turntable to an area outside the turntable in a radial direction through the narrow space.
摘要翻译：在成膜装置中，第一分离气体从分离气体供给部排出到供给第一反应气体的第一处理区域和供给第二反应气体的第二处理区域之间的分离区域。提供加热器以通过辐射热来加热转台。外侧壁构件设置在真空室的底部，以在设置加热器的区域中围绕转台。空间形成构件设置在转台的旋转方向上彼此相邻的分隔区域之间并且从外侧壁构件延伸以在转台之间形成狭窄的空间。吹扫气体从转台的下侧流过转台的外侧，通过狭窄的空间沿径向流动。

5. 发明授权

US09093490B2 Film deposition apparatus 有权
标题翻译：膜沉积装置
公开(公告)号：US09093490B2
公开(公告)日：2015-07-28
申请号：US12713317
申请日：2010-02-26
申请人： Hitoshi Kato , Manabu Honma , Hiroyuki Kikuchi
发明人： Hitoshi Kato , Manabu Honma , Hiroyuki Kikuchi
IPC分类号： C23C16/455 , C23C16/40 , H01L21/677 , H01L21/687
CPC分类号： H01L21/68764 , C23C16/402 , C23C16/45551 , C23C16/45578 , C23C16/45589 , H01L21/68771
摘要： A disclosed film deposition apparatus for depositing a film on a substrate by supplying a reaction gas to an upper surface of the substrate in a vacuum chamber includes a susceptor provided in the vacuum chamber, wherein substrate receiving areas are formed along a circle whose center lies in a center portion of the susceptor; a main gas supplying portion provided opposing the susceptor in order to supply the reaction gas to the substrate receiving areas of the susceptor; a compensation gas supplying portion configured to supply the reaction gas to an upper surface of the susceptor in order to compensate for concentration of the reaction gas supplied from the main gas supplying portion along a radius direction of the susceptor; and a rotation mechanism configured to rotate the susceptor relative to the main gas supplying portion and the compensation gas supplying portion around the center portion of the susceptor.
摘要翻译：公开的一种用于在真空室中将反应气体提供给基板的上表面的基板上沉积薄膜的薄膜沉积装置包括设置在真空室中的基座，其中基板接收区域沿着中心位于基座的中心部分; 主气体供给部，其与所述基座相对设置，以将所述反应气体供应到所述基座的所述基板接收区域; 补偿气体供给部，其构造成将反应气体供给到所述基座的上表面，以补偿从所述主气体供给部沿着所述基座的半径方向供给的反应气体的浓度; 以及旋转机构，其构造成使所述基座相对于所述主气体供给部和所述补偿气体供给部围绕所述基座的中心部旋转。

6. 发明授权

US08951347B2 Film deposition apparatus 有权
标题翻译：膜沉积装置
公开(公告)号：US08951347B2
公开(公告)日：2015-02-10
申请号：US13128908
申请日：2009-11-13
申请人： Hitoshi Kato , Yasushi Takeuchi
发明人： Hitoshi Kato , Yasushi Takeuchi
IPC分类号： C23C16/455 , C23C16/458 , H01L21/306 , C23F1/00 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45551 , C23C16/45519 , C23C16/45578 , C23C16/45591
摘要： A film deposition apparatus is provided with a gas nozzle in which ejection holes that eject a reaction gas are formed along a longitudinal direction of the gas nozzle, and a flow regulation member that protrudes from the gas nozzle in either one of upstream and downstream directions of a rotation direction of a turntable. In such a configuration, a separation gas flowing from an upstream side of the rotation direction to the gas nozzle is restricted from flowing between the gas nozzle and the turntable on which a substrate is placed, and the reaction gas flowing upward from the turntable is restricted by the separation gas, thereby impeding a reaction gas concentration in a process area from being lowered.
摘要翻译：一种成膜装置设置有气体喷嘴，其中沿着气体喷嘴的纵向方向形成喷射反应气体的喷射孔，以及流量调节构件，其从上游和下游方向中的任一个中的气体喷嘴突出转台的旋转方向。在这种构造中，从旋转方向的上游侧流向气体喷嘴的分离气体被限制在气体喷嘴与放置基板的转盘之间的流动，并且从转台向上流动的反应气体受到限制通过分离气体，从而阻止处理区域中的反应气体浓度降低。

7. 发明授权

US08808456B2 Film deposition apparatus and substrate process apparatus 有权
标题翻译：薄膜沉积装置和基板处理装置
公开(公告)号：US08808456B2
公开(公告)日：2014-08-19
申请号：US12539642
申请日：2009-08-12
申请人： Hitoshi Kato , Manabu Honma
发明人： Hitoshi Kato , Manabu Honma
IPC分类号： C23C16/455 , H01L21/677 , C23C16/40 , H01L21/67
CPC分类号： C23C16/401 , C23C16/45502 , C23C16/45508 , C23C16/45551 , H01L21/67161 , H01L21/67703
摘要： A disclosed film deposition apparatus has a separation gas supplying nozzle between reaction gas nozzles arranged away from each other in a rotation direction of a turntable on which a substrate is placed, and a ceiling member providing a lower ceiling surface on both sides of the separation gas supplying nozzle. In this film deposition apparatus, the separation gas supplying nozzle and the reaction gas nozzles are removably arranged along a circumferential direction of a chamber, and the ceiling member is removably attached on a ceiling plate of the chamber.
摘要翻译：所公开的薄膜沉积装置具有在其上放置基板的转台的旋转方向上彼此远离配置的反应气体喷嘴之间的分离气体供给喷嘴，以及在分离气体的两侧设置有下部顶面的顶板部件供应喷嘴。在该成膜装置中，分离气体供给喷嘴和反应气体喷嘴沿着室的圆周方向可拆卸地配置，顶棚部件可移除地安装在室的顶板上。

8. 发明授权

US08673079B2 Film deposition apparatus and substrate processing apparatus 有权
标题翻译：薄膜沉积装置和基板处理装置
公开(公告)号：US08673079B2
公开(公告)日：2014-03-18
申请号：US12550453
申请日：2009-08-31
申请人： Hitoshi Kato , Manabu Honma , Tomoki Haneishi
发明人： Hitoshi Kato , Manabu Honma , Tomoki Haneishi
IPC分类号： C23C16/455 , C23C16/00
CPC分类号： C23C16/45551 , C23C16/401 , C23C16/45502 , C23C16/45508 , C23C16/4583
摘要： A film deposition apparatus includes: a turntable; a first reaction gas supply part and a second reaction gas supply part extending from a circumferential edge toward a rotation center of the turntable; and a first separation gas supply part provided between the first and second reaction gas supply parts. A first space contains the first reaction gas supply part and has a first height. A second space contains the second reaction gas supply part and has a second height. A third space contains a first separation gas supply part and has a height lower than the first and second heights. A motor provided under the rotation center of the turntable rotates the turntable. A rotation shaft of the turntable and a drive shaft of the motor are coupled without generation of slip.
摘要翻译：成膜装置包括：转台; 第一反应气体供给部和第二反应气体供给部，其从周缘朝向转台的旋转中心延伸; 以及设置在第一和第二反应气体供给部之间的第一分离气体供给部。第一空间包含第一反应气体供应部分并且具有第一高度。第二空间包含第二反应气体供应部分并且具有第二高度。第三空间包含第一分离气体供应部分，并且具有低于第一和第二高度的高度。设置在转台的旋转中心下方的电动机使转台旋转。转盘的旋转轴和电动机的驱动轴联接而不产生滑移。

9. 发明授权

US08657286B2 Sheet stacking apparatus and method of controlling the sheet stacking apparatus 有权
标题翻译：片材堆垛装置及其控制方法
公开(公告)号：US08657286B2
公开(公告)日：2014-02-25
申请号：US12145644
申请日：2008-06-25
申请人： Naoki Ishikawa , Tsuyoshi Moriyama , Yasuo Fukatsu , Hitoshi Kato
发明人： Naoki Ishikawa , Tsuyoshi Moriyama , Yasuo Fukatsu , Hitoshi Kato
IPC分类号： B65H39/10
CPC分类号： B65H31/24 , B65H2511/10 , B65H2511/414 , B65H2511/515 , B65H2551/20 , B65H2801/06 , B65H2220/01 , B65H2220/02 , B65H2220/11
摘要： A sheet stacking apparatus which is capable of efficiently stacking sheets of various sizes while efficiently using space therein to thereby realize compactness thereof, and maintaining a high availability. Stacker trays for stacking sheets discharged from an image forming apparatus can be separately removed. It is detected whether any of the stacker trays is removed. When large-size sheets are stacked, a stacker control section causes the stacker trays to operate as one tray to stack the sheets in a state extending on the stacker trays, whereas when small-size sheets are stacked, the section causes one of the stacker trays to stack the sheets. Further, when one stacker tray is removed to make it impossible to stack the large-size sheets, the section causes a display section to display a guide message advising setting of the removed stacker tray.
摘要翻译：一种片材堆垛装置，其能够有效地堆叠各种尺寸的片材，同时有效地使用其中的空间，从而实现其紧凑性，并且保持高可用性。可以单独去除用于从成像设备排出的堆叠纸张的堆纸器托盘。检测是否卸下了任何堆垛机托盘。当大尺寸纸张堆叠时，堆垛机控制部分使得堆垛机托盘作为一个托盘操作以将纸张堆叠在在堆垛机托盘上延伸的状态中，而当小尺寸纸张堆叠时，该部分使得一个堆垛机托盘堆放纸张。此外，当拆下一个堆垛机托盘以使得不可能堆叠大尺寸的纸张时，该部分使得显示部分显示建议设置所取出的堆垛机托盘的指导消息。

10. 发明授权

US08371578B2 Sheet processing system, apparatus capable of reducing amount of positional error of conveyed sheet, and method of controlling sheet processing system 有权
标题翻译：片材处理系统，能够减少输送片材的位置误差量的装置以及片材处理系统的控制方法
公开(公告)号：US08371578B2
公开(公告)日：2013-02-12
申请号：US12908431
申请日：2010-10-20
申请人： Naoki Ishikawa , Hitoshi Kato , Yasuo Fukatsu
发明人： Naoki Ishikawa , Hitoshi Kato , Yasuo Fukatsu
IPC分类号： B65H7/02
CPC分类号： B65H7/06 , B65H9/002 , B65H2402/10 , B65H2511/20 , B65H2511/242 , B65H2511/414 , B65H2511/514 , B65H2557/25 , B65H2557/264 , B65H2557/63 , B65H2701/1315 , B65H2220/03 , B65H2220/01 , B65H2220/02
摘要： A sheet processing system capable of performing lateral shift correction of a sheet in an upstream sheet processing apparatus based on an amount of lateral shift to be caused by conveying thereof into a downstream sheet processing apparatus. A side edge sensor of a stacker detects a lateral shift amount of a sheet conveyed into the stacker. A stacker controller corrects lateral shift of the sheet by a shift unit. A side edge sensor of a finisher disposed downstream of the stacker detects a lateral shift amount of a sheet conveyed into the finisher. The finisher sends the detected lateral shift amount to the stacker. The stacker receives the lateral shift amount from the finisher, and the stacker controller corrects lateral shift of subsequent sheets based on both the lateral shift amount detected in the stacker and the lateral shift amount sent from the finisher.
摘要翻译：一种片材处理系统，其能够基于通过将其输送到下游片材处理装置而导致的横向偏移量，对上游片材处理装置中的片材进行横向偏移校正。堆垛机的侧边缘传感器检测输送到堆垛机中的纸张的横向偏移量。堆垛机控制器通过换档单元校正纸张的横向偏移。设置在堆垛机下游的整理机的侧边传感器检测传送到整理机中的纸张的横向偏移量。整理器将检测到的横向偏移量发送到堆垛机。堆垛机从修整机接收横向偏移量，并且堆垛机控制器基于在堆垛机中检测到的横向偏移量和从修整机发送的横向偏移量来校正后续纸张的横向偏移。

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