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1. 发明申请

US20120015525A1 METHOD OF CLEANING A THIN FILM FORMING APPARATUS, THIN FILM FORMING METHOD, AND THIN FILM FORMING APPARATUS 审中-公开
标题翻译：清洗薄膜形成装置，薄膜成型方法和薄膜成型装置的方法
公开(公告)号：US20120015525A1
公开(公告)日：2012-01-19
申请号：US13183582
申请日：2011-07-15
申请人： Atsushi ENDO , Kazumi KUBO , Satoshi MIZUNAGA
发明人： Atsushi ENDO , Kazumi KUBO , Satoshi MIZUNAGA
IPC分类号： H01L21/31 , B08B5/00 , C23C16/52
CPC分类号： H01L21/67109 , C23C14/3414
摘要： A method of cleaning a thin film forming apparatus, for removing deposits adhering to an inside thereof after supplying a film-forming gas into a reaction chamber to form a amorphous carbon film on a workpiece, includes a heating operation of heating at least one of an inside of the reaction chamber and an inside of an exhaust pipe connected to the reaction chamber to a predetermined temperature; and a removing operation of supplying a cleaning gas containing oxygen gas and hydrogen gas into at least one of the inside of the reaction chamber and the inside of the exhaust pipe heated in the heating operation, heating the cleaning gas to the predetermined temperature to activate the oxygen gas and the hydrogen gas contained in the cleaning gas, and thereafter removing the deposits adhering to the inside of the thin film forming apparatus by the oxygen gas and the hydrogen gas activated.
摘要翻译：一种清洁薄膜形成装置的方法，用于在将成膜气体供应到反应室中以在工件上形成无定形碳膜之后去除附着在其内部的沉积物，包括加热至少一个反应室内部和连接到反应室的排气管内部达预定温度; 以及将含有氧气和氢气的清洁气体供给到在加热操作中被加热的反应室内部和内部的至少一个内部的去除操作，将清洁气体加热至预定温度，以激活氧气和包含在清洁气体中的氢气，然后通过氧气和氢气活化除去附着在薄膜形成装置内部的沉积物。

2. 发明授权

US07696106B2 Film formation method and apparatus for semiconductor process 有权
标题翻译：用于半导体工艺的成膜方法和装置
公开(公告)号：US07696106B2
公开(公告)日：2010-04-13
申请号：US12216703
申请日：2008-07-09
申请人： Mitsuhiro Okada , Kazumi Kubo
发明人： Mitsuhiro Okada , Kazumi Kubo
IPC分类号： H01L21/314
CPC分类号： C23C16/452 , C23C16/26 , C23C16/345 , C23C16/402 , C23C16/45542 , H01L21/02115 , H01L21/02164 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/3141 , H01L21/3146 , H01L21/31612
摘要： A film formation method for a semiconductor process includes placing a plurality of target objects at intervals in a vertical direction inside a process container of a film formation apparatus. Then, the method includes setting the process container to have a first vacuum state therein, and supplying a first film formation gas containing a hydrocarbon gas into the process container, thereby forming a carbon film by CVD on the target objects. Then, the method includes setting the process container to have a second vacuum state therein, while maintaining the process container to have a vacuum state therein from the first vacuum state, and supplying a second film formation gas containing an organic silicon source gas into the process container, thereby forming an Si-containing inorganic film by CVD on the carbon film.
摘要翻译：半导体工艺的成膜方法包括在成膜装置的处理容器内沿垂直方向间隔放置多个目标物体。然后，该方法包括将处理容器设置为具有第一真空状态，并将含有烃气体的第一成膜气体供给到处理容器中，从而通过目标物体上的CVD形成碳膜。然后，该方法包括将处理容器设定为具有第二真空状态，同时将处理容器从第一真空状态保持在其中具有真空状态，并将含有有机硅源气体的第二成膜气体供给到该方法容器，由此在碳膜上通过CVD形成含Si的无机膜。

3. 发明申请

US20060008969A1 Method of forming dielectric film 有权
标题翻译：形成电介质膜的方法
公开(公告)号：US20060008969A1
公开(公告)日：2006-01-12
申请号：US10527683
申请日：2003-10-17
申请人： Tsuyoshi Takahashi , Hiroshi Shinriki , Kazumi Kubo
发明人： Tsuyoshi Takahashi , Hiroshi Shinriki , Kazumi Kubo
IPC分类号： H01L21/8238 , H01L21/31
CPC分类号： H01L21/022 , C23C16/405 , H01L21/02181 , H01L21/02189 , H01L21/02271 , H01L21/28194 , H01L21/28202 , H01L21/31604 , H01L27/10852 , H01L29/513 , H01L29/517
摘要： A method of forming a dielectric film by an organic metal CVD method, comprising the step of supplying an organic metal compound into a treating container having a substrate to be treated held therein to form the dielectric film on the substrate, wherein the dielectric film forming step comprises the first step of depositing, in the treating container, the dielectric film under a first condition so set as to allow the residence time of the organic metal compound to extend to a first value, and the second step of further depositing, after the first step and in the treating container, the dielectric film under a second condition so set as to allow the residence time of the organic metal compound to extend to a second value smaller than the first value.
摘要翻译：一种通过有机金属CVD法形成电介质膜的方法，包括将有机金属化合物供给到具有待处理基板的处理容器中以在基板上形成电介质膜的步骤，其中介电膜形成步骤包括在第一条件下在处理容器中沉积电介质膜的第一步骤，使得有机金属化合物的停留时间延长到第一值，第二步骤在第一步在处理容器中，处于第二条件下的电介质膜，使得有机金属化合物的停留时间延长到小于第一值的第二值。

4. 发明授权

US06907059B1 Optical component fixing method and optical component support 失效
标题翻译：光学部件固定方法和光学部件支撑
公开(公告)号：US06907059B1
公开(公告)日：2005-06-14
申请号：US09534034
申请日：2000-03-24
申请人： Hideo Miura , Kazumi Kubo
发明人： Hideo Miura , Kazumi Kubo
IPC分类号： G02B7/00 , H01S3/02 , H01S3/08 , B32B17/00 , B32B31/00 , C03C27/00
CPC分类号： H01S3/025 , H01S3/0401 , H01S3/0405 , H01S3/042 , H01S3/09415 , Y10T156/1064
摘要： A method of fixing an optical component includes the steps of scoring a surface of a support, bringing an optical component into close contact with the scored surface of the support, and flowing a fluid adhesive along kerfs produced by the scoring. An optical component support has a surface provided with scoring kerts for fixing the optical component. The method and support enable fixing of an optical component by a thin, uniform adhesive layer, without fine polishing of the optical component and the surface of the support.
摘要翻译：固定光学部件的方法包括以下步骤：对支撑体的表面进行刻痕，使光学部件与支撑体的刻痕表面紧密接触，并且使流体粘合剂沿着由刻痕产生的切口流动。光学部件支撑件具有设置有用于固定光学部件的刻痕警报器的表面。该方法和支持使得能够通过薄的均匀的粘合剂层固定光学部件，而不会精细地抛光光学部件和支撑体的表面。

5. 发明授权

US5703900A Laser-diode-pumped solid state laser and method of manufacturing the same 失效
标题翻译：激光二极管泵浦固体激光器及其制造方法
公开(公告)号：US5703900A
公开(公告)日：1997-12-30
申请号：US580183
申请日：1995-12-28
申请人： Nobuharu Nozaki , Shinji Mitsumoto , Kazumi Kubo , Fumio Kobayashi
发明人： Nobuharu Nozaki , Shinji Mitsumoto , Kazumi Kubo , Fumio Kobayashi
IPC分类号： H01S3/094 , H01S3/02 , H01S3/0941 , H01S3/109 , H01S3/16 , H01S3/08
CPC分类号： H01S3/025 , H01S3/0401 , H01S3/0405 , H01S3/042 , H01S3/09415
摘要： A laser-diode-pumped solid state laser includes a Fabry-Perot resonator having a pair of resonator mirrors. A holder provided with a pair of mirror mounting faces spaced from each other in the direction of the optical axis of the resonator is prepared and the resonator mirrors are mounted by bonding the end face thereof, which intersects the optical axis of the resonator, to the mirror mounting faces of the holder by an adhesive layer. The thickness of the adhesive layer is not larger than 5.mu..
摘要翻译：激光二极管泵浦固态激光器包括具有一对谐振镜的法布里 - 珀罗谐振器。准备了在谐振器的光轴方向上彼此间隔开的一对反射镜安装面的保持器，并且通过将与谐振器的光轴相交的端面与其结合而安装谐振镜，通过粘合剂层对支架的镜面安装面。粘合剂层的厚度不大于5微米。

6. 发明申请

US20120164844A1 METHOD AND APPARATUS FOR FORMING OXIDE FILM ON CARBON FILM 有权
标题翻译：在碳膜上形成氧化膜的方法和装置
公开(公告)号：US20120164844A1
公开(公告)日：2012-06-28
申请号：US13337742
申请日：2011-12-27
申请人： Akinobu KAKIMOTO , Atsushi ENDO , Kazumi KUBO
发明人： Akinobu KAKIMOTO , Atsushi ENDO , Kazumi KUBO
IPC分类号： H01L21/316 , C23C16/52
CPC分类号： C23C16/402
摘要： A method for forming an oxide film on a carbon film includes the steps of forming a carbon film on an object to be processed; forming an object-to-be-oxidized layer on the carbon film; and forming an oxide film on the object-to-be-oxidized layer while oxidizing the object-to-be-oxidized layer.
摘要翻译：在碳膜上形成氧化膜的方法包括以下步骤：在被处理物上形成碳膜; 在碳膜上形成被氧化物体层; 在氧化被氧化物层的同时，在被氧化物体上形成氧化膜。

7. 发明申请

US20090029562A1 Film formation method and apparatus for semiconductor process 有权
标题翻译：用于半导体工艺的成膜方法和装置
公开(公告)号：US20090029562A1
公开(公告)日：2009-01-29
申请号：US12216703
申请日：2008-07-09
申请人： Mitsuhiro Okada , Kazumi Kubo
发明人： Mitsuhiro Okada , Kazumi Kubo
IPC分类号： H01L21/31 , C23C16/00
CPC分类号： C23C16/452 , C23C16/26 , C23C16/345 , C23C16/402 , C23C16/45542 , H01L21/02115 , H01L21/02164 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/3141 , H01L21/3146 , H01L21/31612
摘要： A film formation method for a semiconductor process includes placing a plurality of target objects at intervals in a vertical direction inside a process container of a film formation apparatus. Then, the method includes setting the process container to have a first vacuum state therein, and supplying a first film formation gas containing a hydrocarbon gas into the process container, thereby forming a carbon film by CVD on the target objects. Then, the method includes setting the process container to have a second vacuum state therein, while maintaining the process container to have a vacuum state therein from the first vacuum state, and supplying a second film formation gas containing an organic silicon source gas into the process container, thereby forming an Si-containing inorganic film by CVD on the carbon film.
摘要翻译：半导体工艺的成膜方法包括在成膜装置的处理容器内沿垂直方向间隔放置多个目标物体。然后，该方法包括将处理容器设置为具有第一真空状态，并将含有烃气体的第一成膜气体供给到处理容器中，从而通过目标物体上的CVD形成碳膜。然后，该方法包括将处理容器设定为具有第二真空状态，同时将处理容器从第一真空状态保持在其中具有真空状态，并将含有有机硅源气体的第二成膜气体供给到该方法容器，由此在碳膜上通过CVD形成含Si的无机膜。

8. 发明授权

US08518834B2 Method and apparatus for forming oxide film on carbon film 有权
标题翻译：在碳膜上形成氧化膜的方法和装置
公开(公告)号：US08518834B2
公开(公告)日：2013-08-27
申请号：US13337742
申请日：2011-12-27
申请人： Akinobu Kakimoto , Atsushi Endo , Kazumi Kubo
发明人： Akinobu Kakimoto , Atsushi Endo , Kazumi Kubo
IPC分类号： H01L21/31
CPC分类号： C23C16/402
摘要： A method for forming an oxide film on a carbon film includes the steps of forming a carbon film on an object to be processed; forming an object-to-be-oxidized layer on the carbon film; and forming an oxide film on the object-to-be-oxidized layer while oxidizing the object-to-be-oxidized layer.
摘要翻译：在碳膜上形成氧化膜的方法包括以下步骤：在被处理物上形成碳膜; 在碳膜上形成被氧化物体层; 在氧化被氧化物层的同时，在被氧化物体上形成氧化膜。

9. 发明申请

US20080193897A1 Mouthpiece for Flattening Wrinkles 审中-公开
标题翻译：口罩皱纹皱纹
公开(公告)号：US20080193897A1
公开(公告)日：2008-08-14
申请号：US11575110
申请日：2005-09-16
申请人： Kazumi Kubo , Hidesuke Doi , Kazuhiro Ono
发明人： Kazumi Kubo , Hidesuke Doi , Kazuhiro Ono
IPC分类号： A61C5/14
CPC分类号： A61C7/08 , A45D44/22
摘要： A problem to be solved by the present invention is to provide a cheek enhancement piece which can be used casually and low-priced with a cosmetic consciousness similarly to false claws, false eyelashes, and the like, and moreover, adjustable by a person to be fit to own oral vestibule. The present invention provides A cheek enhancement piece, which is characterized by being composed of synthetic resin having flexibility, rubber elasticity, and shape retaining properties at normal temperature, and at the same time, being not deformed by human body temperatures, and capable of being freely formed at heating time, and provided with a length from a person's left molar tooth position reaching to the right molar tooth position and a vertical dimension (width) lower than the height of the gum in the oral vestibule, wherein, in the oral vestibule, at the positional portion opposed by the gum and the cheek mucous membrane and the positional portion opposed by the gum of the front teeth place and the lip mucous membrane, those portions are projected to the cheek mucous membrane side and the lip mucous membrane side, thereby making a lengthwise dimension (thickness) large, and at the same time, at the positional portion opposed by the gum at the canine tooth place and the lip mucous membrane, the lengthwise dimension is reduced, and further, the unevenness and contour in the entirety are made continuous by a smooth curve and formed.
摘要翻译：本发明要解决的问题是提供一种与假爪，假睫毛等类似的随意使用和廉价的化妆品意识使用的面颊增强片，此外，可以由人调节适合自己的口腔前庭。本发明提供一种面颊增强片，其特征在于，由常温下具有柔软性，橡胶弹性，形状保持性的合成树脂构成，同时不会被人体体温变形，能够在加热时自由形成，并且具有从人的左臼齿位置到达正确的臼齿位置的长度，以及比口腔前庭中的牙龈的高度低的垂直尺寸（宽度），其中在口腔前庭在由牙龈和面颊粘膜相对的位置部分和与前牙部分和唇粘膜相对的位置部分，这些部分投射到颊粘膜侧和唇粘膜侧，从而使得长度方向尺寸（厚度）大，同时在与犬齿位置处的口香糖相对的位置处，唇部m uc膜的纵向尺寸减小，并且整体的凹凸和轮廓通过平滑的曲线连续地形成。

10. 发明申请

US20060288935A1 Film formation method and apparatus for semiconductor process 有权
公开(公告)号：US20060288935A1
公开(公告)日：2006-12-28
申请号：US11454939
申请日：2006-06-19
申请人： Hitoshi Kato , Kazumi Kubo , Masahiko Kaminishi
发明人： Hitoshi Kato , Kazumi Kubo , Masahiko Kaminishi
IPC分类号： C23C16/00 , B44C1/22 , C03C25/68 , G06F19/00
CPC分类号： C23C16/0227 , C23C16/24
摘要： In a film formation method for a semiconductor process, a target substrate having a target surface with a natural oxide film is loaded into a reaction chamber, while setting the reaction chamber at a load temperature lower than a threshold temperature at which the natural oxide film starts being stabilized. Then, the natural oxide film is removed by etching, while supplying an etching gas containing chlorine without containing fluorine, and setting the reaction chamber at an etching pressure and an etching temperature lower than the threshold temperature. Then, the reaction chamber is purged. Then, a thin film is formed on the target surface by CVD, while supplying a film formation gas, and setting the reaction chamber at a film formation temperature.

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