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1. 发明申请

US20100132614A1 FILM DEPOSITION APPARATUS 有权
标题翻译：胶片沉积装置
公开(公告)号：US20100132614A1
公开(公告)日：2010-06-03
申请号：US12620750
申请日：2009-11-18
申请人： HITOSHI KATO , Manabu Honma
发明人： HITOSHI KATO , Manabu Honma
IPC分类号： C23C16/50 , C23C16/00
CPC分类号： C23C16/4551 , C23C16/402 , C23C16/45551 , C23C16/45578 , H01L21/6719 , H01L21/67703
摘要： A film deposition apparatus includes a rotary table having a substrate placement area to support a substrate, a vacuum container including a container and a top panel, an open-and-close mechanism configured to open and close the top panel, reactant gas nozzles disposed through and supported by an outer wall of the container to be situated at different angular positions with respect to a rotation center of the rotary table to face areas in which the substrate placement area passes, the reactant gas nozzles having gas discharge ports arranged in radial directions to supply respective reactant gases to the wafer thereby to form respective process areas, a discharge gas supply unit situated at an angular position between the process areas to supply purge gas to form an isolation area that isolates atmospheres of the process areas from each other, and an exhaustion unit configured to exhaust atmosphere inside the vacuum container.
摘要翻译：一种成膜装置，包括具有用于支撑基板的基板放置区域的旋转台，包括容器和顶板的真空容器，构造成打开和关闭顶板的开闭机构，布置成穿过的反应气体喷嘴并且由所述容器的外壁支撑，以相对于所述旋转台的旋转中心位于不同的角度位置，以面对所述基板放置区域通过的区域，所述反应气体喷嘴具有沿径向布置的气体排出口，将相应的反应气体供应到晶片，从而形成相应的处理区域，放电气体供应单元位于处理区域之间的角位置处，以供应净化气体，以形成隔离区域，隔离区域将过程区域的气氛彼此隔离;以及排气单元构造成排出真空容器内的气氛。

2. 发明授权

US06951827B2 Controlling surface chemistry on solid substrates 失效
标题翻译：控制固体基质上的表面化学
公开(公告)号：US06951827B2
公开(公告)日：2005-10-04
申请号：US10221247
申请日：2001-03-15
申请人： Arthur L. Utz , Ludo B. F. Juurlink
发明人： Arthur L. Utz , Ludo B. F. Juurlink
IPC分类号： C23C16/04 , C23C16/26 , C23C16/44 , C23C16/455 , C23C16/48 , C30B25/10 , C30B33/00 , C30B33/04 , H01L21/31 , H01S1/00
CPC分类号： C23C16/4551 , C23C16/04 , C23C16/047 , C23C16/26 , C23C16/483 , C30B25/105 , C30B29/36 , C30B33/00 , C30B33/04
摘要： By exposing precursor molecules traveling in a molecular beam to a narrow bandwidth laser beam (hu) tuned to a vibrational resonance frequency of the molecules and aimed orthogonal to the molecular beam (FIG. 6A), only those molecules having velocity (va) along trajectory (A) orthogonal to the laser beam are excited, becoming several orders of magnitude more reactive, affording a high degree of control over precise locations of reactions of molecules. Controlling a reaction on a surface of a solid substrate, includes; (a) obtaining a precursor molecule that includes (or can be reacted to form) species to be reacted with the substrate; (b) creating a molecular beam (eg., supersonic) that includes the precursor molecule; (c) vibrationally exciting the molecule with the laser beam tuned to a vibrational resonance frequency of the molecule; and (d) causing the exciting molecule to impinge on the substrate, enabling reactions (deposition, etching . . . ) of the species with the substrate.
摘要翻译：通过将在分子束中行进的前体分子暴露于调谐到分子的振动共振频率并且与分子束正交的目标（图6A）的窄带宽激光束（hu），仅具有沿轨迹的速度（va）的分子与激光束正交的（A）被激发，变成几个数量级的反应性，提供了对分子反应精确位置的高度控制。控制固体基材表面上的反应，包括：（a）获得包含（或可以反应形成）待与基底反应的物质的前体分子; （b）产生包括前体分子的分子束（例如超音速）; （c）使激光束调谐到分子的振动共振频率来振动激发分子; 和（d）使激发分子撞击到基底上，使得能够与基底进行物质的反应（沉积，蚀刻...）。

3. 发明授权

US6148764A Multiple micro inlet silane injection system for the jet vapor deposition of silicon nitride with a microwave discharge jet source 失效
标题翻译：用于用微波放电喷射源喷射气相沉积氮化硅的多个微入口硅烷注入系统
公开(公告)号：US6148764A
公开(公告)日：2000-11-21
申请号：US222116
申请日：1998-12-29
申请人： Guang-Ji Cui , Takashi Tamagawa , Bret Halpern
发明人： Guang-Ji Cui , Takashi Tamagawa , Bret Halpern
IPC分类号： C23C16/34 , C23C16/44 , C23C16/452 , C23C16/455 , C23C16/50
CPC分类号： C23C16/4551 , C23C16/345 , C23C16/452 , C23C16/455 , C23C16/45576 , C23C16/45578
摘要： Introducing a silane reactant gas into a Jet Vapor Deposition microwave discharge source for deposition of silicon nitride films at increased rate. An array of regularly spaced micro-inlets in a JVD microwave discharge source delivers the silane reactant gas and act as non-interfering silane injectors to give a rate increase proportional to the number of micro-inlets while preserving deposited film quality.
摘要翻译：将硅烷反应气体引入到喷射气相沉积微波放电源中，用于以增加的速率沉积氮化硅膜。在JVD微波放电源中的规则间隔的微入口阵列提供硅烷反应气体，并作为非干涉硅烷注射器，以提供与微入口数成比例的速率增加，同时保持沉积的膜质量。

4. 发明授权

US5951771A Plasma jet system 失效
标题翻译：等离子喷射系统
公开(公告)号：US5951771A
公开(公告)日：1999-09-14
申请号：US719823
申请日：1996-09-30
申请人： Daniel V. Raney , Michael Scott Heuser , Stephen M. Jaffe , C. B. Shepard, Jr.
发明人： Daniel V. Raney , Michael Scott Heuser , Stephen M. Jaffe , C. B. Shepard, Jr.
IPC分类号： C30B29/04 , C23C16/27 , C23C16/44 , C23C16/455 , C23C16/513 , H05H1/42 , C23C4/00
CPC分类号： C23C16/4551 , C23C16/513 , H05H1/42
摘要： A plasma jet CVD system includes gas injectors and a stand-off ring. The gas injectors have outlet holes preferably flared to approach the expansion angle of the injected jet, thereby keeping the holes substantially free from entrained atomic hydrogen. The injectors are arranged counter-rotational to the swirl of the primary jet, providing a more uniform mixture of hydrocarbons and atomic hydrogen. The stand-off ring provides vents for cooler gases to enter the nozzle, thereby decreasing the overall temperature of the injectors and decreasing the temperature gradient experienced by the injectors, thereby preventing injector cracking. In addition the vents reduce shear, thereby increasing jet velocity and increasing the deposition rate for the coating. In addition, a new method of injector design permits optimal mixing characteristics to be obtained across various recipes whereby the ratio of the mass flux of the primary flow of the jet to the mass flux of the injected flow from the downstream injectors is kept constant.
摘要翻译：等离子体喷射CVD系统包括气体喷射器和支架环。气体喷射器具有出口孔，其优选地扩张以接近喷射射流的膨胀角，从而保持孔基本上不含夹带的原子氢。喷射器被布置成与主射流的漩涡相反旋转，提供烃和原子氢的更均匀的混合物。支座环为较冷气体提供通风口进入喷嘴，从而降低喷射器的总体温度并降低喷射器所经历的温度梯度，从而防止喷油器破裂。此外，通风口减少剪切，从而增加喷射速度并增加涂层的沉积速率。此外，喷射器设计的新方法允许在各种配方中获得最佳的混合特性，由此射流的一次流的质量流量与来自下游喷射器的喷射流的质量通量的比率保持恒定。

5. 发明授权

US5025751A Solid film growth apparatus 失效
标题翻译：固体膜生长装置
公开(公告)号：US5025751A
公开(公告)日：1991-06-25
申请号：US366185
申请日：1989-06-14
申请人： Shinichiro Takatani , Shigeo Goto , Masahiko Kawata , Kenji Hiruma
发明人： Shinichiro Takatani , Shigeo Goto , Masahiko Kawata , Kenji Hiruma
IPC分类号： C23C16/44 , C23C16/455 , C30B25/02 , C30B25/14
CPC分类号： C23C16/4551 , C30B25/02 , C30B25/14 , C30B29/40 , Y10S148/169
摘要： A solid film forming apparatus, e.g., an MO-MBE (Metal-Organic Molecular Beam Epitaxy) apparatus, wherein evacuatable containers isolated from a growth chamber by a switching device and connected to raw material gas introduction pipings are provided between the growth chamber for a solid film, e.g., a compound semiconductor, and raw material gas introduction pipings. Growth of the solid film is controlled by opening and closing the switching device and evacuating the container at least while the switching device is closed during the growth of the solid film. An undesired influence on the growing film due to residual gas in the containers which are not used for growth can be prevented and, hence, interception and introduction of the raw material gas into the growth chamber can be performed with remarkably high controllability, and films of superior abruptness of the interface between films, e.g., the heterojunction of the compound semiconductor, can be obtained.
摘要翻译：一种固体成膜装置，例如MO-MBE（金属有机分子束外延）装置，其中通过开关装置从生长室隔离并连接到原料气体导入管的可排出容器设置在生长室之间用于固体膜，例如化合物半导体和原料气体导入管。至少在固体膜生长期间开关装置关闭时，通过打开和关闭开关装置并抽出容器来控制固体膜的生长。可以防止由于不用于生长的容器中的残留气体对生长的膜产生不期望的影响，因此可以以非常高的可控性进行原料气体截留和引入生长室，并且可以进行膜的可以获得膜之间的界面的优异的突变性，例如化合物半导体的异质结。

6. 发明授权

US4788082A Method and apparatus for the deposition of solid films of a material from a jet stream entraining the gaseous phase of said material 失效
标题翻译：用于从夹带所述材料的气相的喷射流中沉积材料的固体膜的方法和装置
公开(公告)号：US4788082A
公开(公告)日：1988-11-29
申请号：US888590
申请日：1985-12-12
申请人： Jerome J. Schmitt
发明人： Jerome J. Schmitt
IPC分类号： F01D5/28 , B05D3/04 , B05D5/12 , B22F9/12 , B32B9/00 , C23C14/00 , C23C14/24 , C23C16/01 , C23C16/24 , C23C16/44 , C23C16/455 , H01M4/04 , H01M4/38 , H01M6/18 , C23C16/00
CPC分类号： H01M4/0404 , B22F9/12 , C23C14/0005 , C23C14/0021 , C23C14/228 , C23C14/24 , C23C16/01 , C23C16/24 , C23C16/4551 , C23C16/45563 , C23C16/45593 , H01M4/04 , H01M4/0402 , H01M4/0423 , H01M4/0428 , H01M4/0438 , H01M4/0471 , H01M4/049 , H01M4/383 , H01M6/185 , H01M6/188
摘要： Described is a method for depositing from the vapor phase a chemical species into the form of a thin solid film material which overlays a substrate material. The deposition process consists of three steps: (1) synthesis of depositing species, (2) transport of said species from site of synthesis to a prepared substrate material, and (3) condensation and subsequent film growth. The transport step is achieved by admixing small concentrations of the depositing species into the flow of a high speed jet of an inert carrier gas. This jet impinges on the substrate's surface and thereby convects the depositing species to this surface where condensation occurs. Since the gas mixture is at fairly high pressure, the deposition is achieved in a simple flow apparatus rather than in the high vacuum systems required of other methods. Also this transport technique allows the chemical and/or physical phenomena utilized in the depositing species synthesis step to be isolated from the actual condensation reaction. Consequently, the conditions governing each of these reactions can be varied independently to optimize both steps. Such flexibility permits the synthesis and deposition of a wide variety of chemical species, hence many thin film materials are susceptible to formation by this method.
摘要翻译：描述了一种从气相中将化学物质沉积成覆盖衬底材料的薄固体膜材料形式的方法。沉积过程由三个步骤组成：（1）沉积物质的合成，（2）将所述物质从合成位点输送到制备的基底材料，以及（3）冷凝和随后的膜生长。运输步骤通过将小浓度的沉积物质混合到惰性载气的高速喷射流中来实现。这种喷射器冲击在基板的表面上，从而将沉积物质对流到出现冷凝的表面。由于气体混合物处于相当高的压力下，所以沉积在简单的流动装置中而不是其它方法所需的高真空系统中实现。而且，这种运输技术允许在沉积物种合成步骤中使用的化学和/或物理现象与实际的缩合反应隔离。因此，可以独立地改变控制每个这些反应的条件以优化两个步骤。这种灵活性允许各种化学物质的合成和沉积，因此许多薄膜材料易于通过该方法形成。

7. 发明授权

US4468283A Method for etching and controlled chemical vapor deposition 失效
标题翻译：蚀刻和控制化学气相沉积的方法
公开(公告)号：US4468283A
公开(公告)日：1984-08-28
申请号：US451450
申请日：1982-12-17
申请人： Irfan Ahmed
发明人： Irfan Ahmed
IPC分类号： C23C16/44 , C23C16/455 , C23F1/12 , C30B25/14 , H01L21/306 , B05D5/12 , C23C11/00 , H01L7/36
CPC分类号： C23C16/45504 , C23C16/4551 , C23C16/45593 , C23F1/12 , C30B25/14 , Y10S118/90 , Y10S156/917 , Y10S438/935
摘要： A high velocity stream of gas comprising of either the carrier gas or one or more film forming or removing components is shot through a shooting means such as a nozzle or orifice in the form of a high speed stream of gas in a chemical vapor deposition growth chamber or within an attachment receiving reaction gases from such a chamber. This gas or mixture of gases entrains all of the adjacent gases within the vicinity of the shooting nozzle or orifice and is subsequently swept through a diffusion tube. The diffusion tube compresses and exhausts the gas mixture at a pressure sufficient to drive the combined gas mixture through a heat exchanger and finally back into the growth chamber. The gases within the growth chamber are provided for entrainment downstream to a heated base or substrate which is being coated with a thin film or epitaxial layer of film forming components contained in a carrier gas. The entrained temperature adjusted gas mixture together with the high velocity gas mixture is reintroduced upstream of the same heated base or substrates in the growth chamber.
摘要翻译：包括载气或一种或多种成膜或去除组分的高速气流可以通过诸如在化学气相沉积生长室中以高速气流形式的喷嘴或孔口的射击装置或者在接收来自这种室的反应气体的附件内。这种气体或气体混合物将所有相邻的气体夹带在喷嘴或孔口附近，随后被扫过扩散管。扩散管以足以驱动合并的气体混合物通过热交换器并最终回到生长室的压力来压缩和排出气体混合物。生长室内的气体被提供用于夹带在加热的基底或基底的下游，该基底或基底被涂覆有载体气体中包含的成膜组分的薄膜或外延层。夹带温度调节的气体混合物与高速气体混合物再次引入生长室中相同加热的碱或基底的上游。

8. 发明申请

US20110162581A1 ATOMIC LAYER DEPOSITION APPARATUS USING NEUTRAL BEAM AND METHOD OF DEPOSITING ATOMIC LAYER USING THE SAME 审中-公开
标题翻译：使用中性光束的原子层沉积装置和使用其沉积原子层的方法
公开(公告)号：US20110162581A1
公开(公告)日：2011-07-07
申请号：US13050507
申请日：2011-03-17
申请人： Geun-Young Yeom , Do-Haing Lee , Byoung-Jae Park , Kyeong-Joon Ahn
发明人： Geun-Young Yeom , Do-Haing Lee , Byoung-Jae Park , Kyeong-Joon Ahn
IPC分类号： C23C16/48 , C23C16/455
CPC分类号： C23C16/45536 , C23C16/452 , C23C16/4551 , C23C16/45544
摘要： Disclosed are an atomic layer deposition apparatus using a neutral beam and a method of depositing an atomic layer using the apparatus, capable of converting an ion beam into a neutral beam and radiating it onto a substrate to be treated. The method uses an apparatus for supplying a first reaction gas containing a material that cannot be chemisorbed onto a substrate to be treated into a reaction chamber in which the substrate is loaded, and forming a first reactant adsorption layer containing a material that cannot be chemisorbed onto the substrate; and radiating a neutral beam generated by the second reaction gas onto the substrate on which the first reactant adsorption layer is formed, and removing a material not chemisorbed onto the substrate from the first reactant adsorption layer to form a second reactant adsorption layer. It is possible to perform a process without damage due to charging with the apparatus for depositing an atomic layer using a neutral beam and the method of depositing an atomic layer using the apparatus.
摘要翻译：公开了使用中性光束的原子层沉积设备和使用该设备沉积原子层的方法，其能够将离子束转换成中性光束并将其辐射到待处理的衬底上。该方法使用一种装置，用于将含有不能被化学吸附的材料的第一反应气体提供到待处理的基材上，并将其加载到其中装载基材的反应室中，以及形成含有不能被化学吸附的材料的第一反应物吸附层基材; 并且将由所述第二反应气体产生的中性束辐射到形成有所述第一反应物吸附层的基板上，并从所述第一反应物吸附层除去未化学吸附到所述基板上的材料，以形成第二反应物吸附层。可以通过使用中性光束对用于沉积原子层的装置进行充电而进行无损伤的处理以及使用该装置沉积原子层的方法。

9. 发明授权

US07919142B2 Atomic layer deposition apparatus using neutral beam and method of depositing atomic layer using the same 有权
标题翻译：使用中性光束的原子层沉积设备和使用其沉积原子层的方法
公开(公告)号：US07919142B2
公开(公告)日：2011-04-05
申请号：US11348471
申请日：2006-02-07
申请人： Geun-Young Yeom , Do-Haing Lee , Byoung-Jae Park , Kyeong-Joon Ahn
发明人： Geun-Young Yeom , Do-Haing Lee , Byoung-Jae Park , Kyeong-Joon Ahn
IPC分类号： C23C16/00 , C23C14/28 , C23C14/30 , H05B6/00 , H05B7/00
CPC分类号： C23C16/45536 , C23C16/452 , C23C16/4551 , C23C16/45544
摘要： Disclosed are an atomic layer deposition apparatus using a neutral beam and a method of depositing an atomic layer using the apparatus, capable of converting an ion beam into a neutral beam and radiating it onto a substrate to be treated. The method uses an apparatus for supplying a first reaction gas containing a material that cannot be chemisorbed onto a substrate to be treated into a reaction chamber in which the substrate is loaded, and forming a first reactant adsorption layer containing a material that cannot be chemisorbed onto the substrate; and radiating a neutral beam generated by the second reaction gas onto the substrate on which the first reactant adsorption layer is formed, and removing a material not chemisorbed onto the substrate from the first reactant adsorption layer to form a second reactant adsorption layer. It is possible to perform a process without damage due to charging with the apparatus for depositing an atomic layer using a neutral beam and the method of depositing an atomic layer using the apparatus.
摘要翻译：公开了使用中性光束的原子层沉积设备和使用该设备沉积原子层的方法，其能够将离子束转换成中性光束并将其辐射到待处理的衬底上。该方法使用一种装置，用于将含有不能被化学吸附的材料的第一反应气体提供到待处理的基材上，并将其加载到其中装载基材的反应室中，以及形成含有不能被化学吸附的材料的第一反应物吸附层基材; 并且将由所述第二反应气体产生的中性束辐射到形成有所述第一反应物吸附层的基板上，并从所述第一反应物吸附层除去未化学吸附到所述基板上的材料，以形成第二反应物吸附层。可以通过使用中性光束对用于沉积原子层的装置进行充电而进行无损伤的处理以及使用该装置沉积原子层的方法。

10. 发明授权

US6165554A Method for hydrogen atom assisted jet vapor deposition for parylene N and other polymeric thin films 失效
标题翻译：用于聚对二甲苯N和其他聚合物薄膜的氢原子辅助喷气气相沉积的方法
公开(公告)号：US6165554A
公开(公告)日：2000-12-26
申请号：US189927
申请日：1998-11-12
申请人： Bret Halpern , Raymond F. Graves
发明人： Bret Halpern , Raymond F. Graves
IPC分类号： B05D1/02 , B05D7/24 , C23C16/44 , C23C16/448 , C23C16/452 , C23C16/455 , C23C16/00
CPC分类号： C23C16/4551 , B05D1/02 , B05D1/60 , C23C16/4481 , C23C16/452
摘要： A method is presented for the vapor deposition of a material film upon a substrate. The method comprises the use of a Jet Vapor Deposition process with a vaporized polymer gas flowing at supersonic velocity. The vaporized polymer gas consists of a carrier gas and a vaporized polymer, such as Parylene. The vaporized polymer gas impinges upon the substrate through a port and forms the material film.
摘要翻译：提出了一种用于在基材上气相沉积材料膜的方法。该方法包括使用具有以超音速流动的气化聚合物气体的喷射气相沉积方法。蒸发的聚合物气体由载气和蒸发的聚合物如Parylene组成。蒸发的聚合物气体通过端口撞击在基底上并形成材料膜。

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