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1. 发明申请

US20050270518A1 Method for determining position of reference point 有权
标题翻译：确定参考点位置的方法
公开(公告)号：US20050270518A1
公开(公告)日：2005-12-08
申请号：US11141393
申请日：2005-06-01
申请人： Hiroyuki Sugawara , Takeshi Goto , Kounosuke Kitamura , Hiroshi Aoyama
发明人： Hiroyuki Sugawara , Takeshi Goto , Kounosuke Kitamura , Hiroshi Aoyama
IPC分类号： H05K1/02 , G03B27/32 , H05K3/00
CPC分类号： G03B27/32 , H05K1/0269 , H05K3/0008 , H05K3/0026 , H05K2201/09781 , H05K2201/09918
摘要： A method for determining a position of a reference point in which there is no influence of aberration of a camera lens or the like, but an error caused by a failure in shape of an alignment mark can be reduced. An alignment mark consisting of a plurality of pattern portions (and background portions) centering at a design reference point is provided in advance. Positions of centers of border lines of the patterns are calculated. Obtained coordinate values of the centers are averaged in each axial direction. The averaged coordinate values are regarded as coordinate values of a machining reference point. Thus, even when a defect occurs in any pattern portion, an error caused by the defect is reduced so that the accuracy in machining can be improved.
摘要翻译：可以减小用于确定在其中没有一个照相机透镜等的像差的影响的参考点的位置的方法，但由在对准标记的形状的失败的错误。预先设置由以设计基准点为中心的多个图案部分（和背景部分）构成的对准标记。计算模式边界线中心的位置。获得的中心坐标值在每个轴向平均。平均坐标值被认为是加工参考点的坐标值。因此，即使当在任何图案部分发生缺陷时，由缺陷引起的误差降低，从而可以提高加工精度。

2. 发明授权

US07522262B2 Method for determining position of reference point 有权
标题翻译：确定参考点位置的方法
公开(公告)号：US07522262B2
公开(公告)日：2009-04-21
申请号：US11141393
申请日：2005-06-01
申请人： Hiroyuki Sugawara , Takeshi Goto , Kounosuke Kitamura , Hiroshi Aoyama
发明人： Hiroyuki Sugawara , Takeshi Goto , Kounosuke Kitamura , Hiroshi Aoyama
IPC分类号： G03B27/42 , G01B11/00
CPC分类号： G03B27/32 , H05K1/0269 , H05K3/0008 , H05K3/0026 , H05K2201/09781 , H05K2201/09918
摘要： A method for determining a position of a reference point in which there is no influence of aberration of a camera lens or the like, but an error caused by a failure in shape of an alignment mark can be reduced. An alignment mark consisting of a plurality of pattern portions (and background portions) centering at a design reference point is provided in advance. Positions of centers of border lines of the patterns are calculated. Obtained coordinate values of the centers are averaged in each axial direction. The averaged coordinate values are regarded as coordinate values of a machining reference point. Thus, even when a defect occurs in any pattern portion, an error caused by the defect is reduced so that the accuracy in machining can be improved.
摘要翻译：用于确定不影响照相机镜头等的像差的参考点的位置的方法，但是可以减少由对准标记的形状的故障引起的误差。预先设置由以设计基准点为中心的多个图案部分（和背景部分）构成的对准标记。计算模式边界线中心的位置。获得的中心坐标值在每个轴向平均。平均坐标值被认为是加工参考点的坐标值。因此，即使当在任何图案部分发生缺陷时，由缺陷引起的误差降低，从而可以提高加工精度。

3. 发明授权

US07629714B2 Rocking actuator and laser machining apparatus 有权
标题翻译：摇摆执行器和激光加工设备
公开(公告)号：US07629714B2
公开(公告)日：2009-12-08
申请号：US11833695
申请日：2007-08-03
申请人： Souichi Toyama , Kounosuke Kitamura , Akira Doi , Hiromu Hirai , Kenta Seki , Yoshiaki Kano
发明人： Souichi Toyama , Kounosuke Kitamura , Akira Doi , Hiromu Hirai , Kenta Seki , Yoshiaki Kano
IPC分类号： H02K33/00
CPC分类号： H02K26/00 , H02K33/16
摘要： A rocking actuator and a laser machining apparatus which can suppress a temperature rise of a permanent magnet in a moving-magnet actuator. Even when a steerable mirror is positioned by rapid and continuous motions, highly reliable machining can be performed without degrading machining throughput or hole position accuracy. A cooling jacket for cooling a casing and heat transfer units brought into contact with a coil and the casing are provided. Heat generated in the coil is introduced to the casing through the heat transfer bypass units. Thus, the temperature rise of the coil is suppressed. Radial grooves are provided in the permanent magnet opposed to the coil so as to prevent an eddy current from appearing therein. Groove depth is made not smaller than skin depth expressed by a function of volume resistivity and permeability of the permanent magnet and a fundamental frequency of a current applied to the coil.
摘要翻译：可以抑制移动磁体致动器中的永磁体的温度升高的摆动致动器和激光加工装置。即使通过快速连续的运动来定位可转向的镜子，也可以在不降低加工吞吐量或孔位置精度的情况下执行高度可靠的加工。提供了用于冷却壳体的冷却套和与线圈和壳体接触的传热单元。在线圈中产生的热量通过传热旁路单元引入壳体。因此，线圈的温度上升被抑制。在与线圈相对的永磁体中设置有径向槽，以防止其中出现涡流。凹槽深度不小于由永磁体的体积电阻率和磁导率函数表示的皮肤深度以及施加到线圈的电流的基频。

4. 发明申请

US20060243192A1 Method of simulation with respect to density distribution and size distribution of void defect within single crystal and oxygen precipitation nucleus within single crystal 有权
标题翻译：用于预测单晶中空隙和氧沉淀核的密度和尺寸分布的模拟方法
公开(公告)号：US20060243192A1
公开(公告)日：2006-11-02
申请号：US10558790
申请日：2003-05-30
申请人： Kounosuke Kitamura , Jun Furukawa , Naoki Ibi
发明人： Kounosuke Kitamura , Jun Furukawa , Naoki Ibi
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B29/06 , C30B15/206 , Y10T117/1008
摘要： To precisely predict the distribution of densities and sizes of void defects comprising voids and inner wall oxide membranes in a single crystal. The computer-based simulation determines, at steps 1 to 7, the distribution of temperatures within a single crystal 14 growing from a melt 12 from the time of its pulling-up to the time of its completing cooling with due consideration paid to convection currents in the melt 12. The computer-based simulation, at steps 8 to 15, determines the density of voids considering the cooling process of the single crystal separated from the melt, that is, the pulling-up speed of the single crystal after the separation from the melt, and reflecting the effect of slow and rapid cooling of the single crystal in the result, and relates the radius of voids with the thickness of inner wall oxide membrane developed around the voids.
摘要翻译：精确预测单晶中空隙和内壁氧化物膜的空隙的密度和尺寸分布。基于计算机的模拟在步骤1至7中确定从熔融物12从其提拉时开始到其完成冷却时间的单晶14内的温度分布，同时适当考虑到对流电流熔体12。在步骤8至15中的基于计算机的模拟，考虑到从熔体分离的单晶的冷却过程，即从熔体分离后的单晶的提升速度，确定空隙的密度，以及反映了单晶缓慢快速冷却的效果，并将空隙半径与空隙周围形成的内壁氧化膜的厚度相关联。

5. 发明申请

US20080036309A1 Rocking Actuator and Laser Machining Apparatus 有权
标题翻译：摇动执行器和激光加工设备
公开(公告)号：US20080036309A1
公开(公告)日：2008-02-14
申请号：US11833695
申请日：2007-08-03
申请人： Souichi Toyama , Kounosuke Kitamura , Akira Doi , Hiromu Hirai , Kenta Seki , Yoshiaki Kano
发明人： Souichi Toyama , Kounosuke Kitamura , Akira Doi , Hiromu Hirai , Kenta Seki , Yoshiaki Kano
IPC分类号： H02K33/00
CPC分类号： H02K26/00 , H02K33/16
摘要： A rocking actuator and a laser machining apparatus which can suppress a temperature rise of a permanent magnet in a moving-magnet actuator. Even when a steerable mirror is positioned by rapid and continuous motions, highly reliable machining can be performed without degrading machining throughput or hole position accuracy. A cooling jacket for cooling a casing and heat transfer units brought into contact with a coil and the casing are provided. Heat generated in the coil is introduced to the casing through the heat transfer bypass units. Thus, the temperature rise of the coil is suppressed. Radial grooves are provided in the permanent magnet opposed to the coil so as to prevent an eddy current from appearing therein. Groove depth is made not smaller than skin depth expressed by a function of volume resistivity and permeability of the permanent magnet and a fundamental frequency of a current applied to the coil.
摘要翻译：可以抑制移动磁体致动器中的永磁体的温度升高的摆动致动器和激光加工装置。即使通过快速连续的运动来定位可转向的镜子，也可以在不降低加工吞吐量或孔位置精度的情况下执行高度可靠的加工。提供了用于冷却壳体的冷却套和与线圈和壳体接触的传热单元。在线圈中产生的热量通过传热旁路单元引入壳体。因此，线圈的温度上升被抑制。在与线圈相对的永磁体中设置有径向槽，以防止其中出现涡流。凹槽深度不小于由永磁体的体积电阻率和磁导率函数表示的皮肤深度以及施加到线圈的电流的基频。

6. 发明申请

US20060130737A1 Method for manufacturing silicon single crystal 有权
标题翻译：硅单晶的制造方法
公开(公告)号：US20060130737A1
公开(公告)日：2006-06-22
申请号：US10521035
申请日：2003-07-07
申请人： Daisuke Wakabayashi , Masao Saito , Satoshi Sato , Jun Furukawa , Kounosuke Kitamura
发明人： Daisuke Wakabayashi , Masao Saito , Satoshi Sato , Jun Furukawa , Kounosuke Kitamura
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B29/06 , C30B15/203 , C30B15/22
摘要： A silicon single crystal rod (24) is pulled from a silicon melt (13) molten by a heater (17), and a change in diameter of the silicon single crystal rod every predetermined time is fed back to a pulling speed of the silicon single crystal rod and a temperature of the heater, thereby controlling a diameter of the silicon single crystal rod. A PID control in which a PID constant is changed on a plurality of stages is applied to a method which controls the pulling speed of the silicon single crystal rod so that the silicon single crystal rod has a target diameter and a method which controls a heater temperature so that the silicon single crystal rod has the target temperature. A set pulling speed for the silicon single crystal rod is set so that V/G becomes constant, and an actual pulling speed is accurately controlled so as to match with the set pulling speed, thereby suppressing a fluctuation in diameter of the single crystal rod.
摘要翻译：从由加热器（17）熔化的硅熔体（13）中拉出硅单晶棒（24），并且每隔预定时间将硅单晶棒的直径变化反馈到硅单晶的拉拔速度晶棒和加热器的温度，从而控制硅单晶棒的直径。将控制多个级上的PID常数的PID控制应用于控制硅单晶棒的拉拔速度的方法，使得硅单晶棒具有目标直径，以及控制加热器温度的方法使硅单晶棒具有目标温度。设定硅单晶棒的设定拉拔速度使得V / G变得恒定，并且实际的拉拔速度被精确地控制以与设定的牵引速度相匹配，从而抑制单晶棒的直径的波动。

7. 发明授权

US06451107B2 Method for simulating the shape of the solid-liquid interface between a single crystal and a molten liquid, and the distribution of point defects of the single crystal 有权
标题翻译：用于模拟单晶和熔液之间的固 - 液界面形状的方法，以及单晶点点缺陷的分布
公开(公告)号：US06451107B2
公开(公告)日：2002-09-17
申请号：US09793862
申请日：2001-02-26
申请人： Kounosuke Kitamura , Naoki Ono
发明人： Kounosuke Kitamura , Naoki Ono
IPC分类号： C30B1328
CPC分类号： C30B29/06 , C30B15/00 , Y10T117/1008
摘要： A first step models a hot zone in a pulling apparatus of a single crystal as a mesh structure, and a second step inputs physical property values of each member corresponding to meshes combined for each member of the hot zone into a computer. A third step obtains the surface temperature distribution of each member on the basis of the calorific power of a heater and the emissivity of each member, and a fourth step obtains the internal temperature distribution of each member on the basis of the surface temperature distribution and the thermal conductivity of each member, and then further obtains the internal temperature distribution of a molten liquid being in consideration of convection. A fifth step obtains the shape of the solid-liquid interface between the single crystal and the molten liquid in accordance with an isothermal line including a tri-junction of the single crystal. A sixth step repeats said third to fifth steps until the tri-junction becomes the melting point of the single crystal. The invention aims at making the computation result and an actual measurement result of the shape of the solid-liquid interface between a single crystal and a molten liquid coincide very well with each other.
摘要翻译：第一步骤是将作为网格结构的单晶体的拉制装置中的热区域进行建模，并且第二步骤将与热区域的每个构件组合的网孔对应的每个构件的物理属性值输入到计算机中。第三步骤基于加热器的发热量和每个部件的发射率获得每个部件的表面温度分布，第四步骤基于表面温度分布获得每个部件的内部温度分布，并且每个构件的导热性，然后进一步获得考虑到对流的熔融液体的内部温度分布。第五步骤根据包括单晶三联的等温线获得单晶和熔液之间的固 - 液界面的形状。第六步骤重复所述第三至第五步骤，直到三联成为单晶的熔点。本发明旨在使计算结果和单晶与熔液之间的固 - 液界面形状的实际测量结果相互重合。

8. 发明授权

US07282094B2 Method of simulation with respect to density distribution and size distribution of void defect within single crystal and oxygen precipitation nucleus within single crystal 有权
标题翻译：用于预测单晶中空隙和氧沉淀核的密度和尺寸分布的模拟方法
公开(公告)号：US07282094B2
公开(公告)日：2007-10-16
申请号：US10558790
申请日：2003-05-30
申请人： Kounosuke Kitamura , Jun Furukawa , Naoki Ono
发明人： Kounosuke Kitamura , Jun Furukawa , Naoki Ono
IPC分类号： C30B13/28
CPC分类号： C30B29/06 , C30B15/206 , Y10T117/1008
摘要： To precisely predict the distribution of densities and sizes of void defects comprising voids and inner wall oxide membranes in a single crystal. The computer-based simulation determines, at steps 1 to 7, the distribution of temperatures within a single crystal 14 growing from a melt 12 from the time of its pulling-up to the time of its completing cooling with due consideration paid to convection currents in the melt 12. The computer-based simulation, at steps 8 to 15, determines the density of voids considering the cooling process of the single crystal separated from the melt, that is, the pulling-up speed of the single crystal after the separation from the melt, and reflecting the effect of slow and rapid cooling of the single crystal in the result, and relates the radius of voids with the thickness of inner wall oxide membrane developed around the voids.
摘要翻译：精确预测单晶中空隙和内壁氧化物膜的空隙的密度和尺寸分布。基于计算机的模拟在步骤1至7中确定从熔融物12从其提拉时开始到其完成冷却时间的单晶14内的温度分布，同时适当考虑到对流电流熔体12。在步骤8至15中的基于计算机的模拟，考虑到从熔体分离的单晶的冷却过程，即从熔体分离后的单晶的提升速度，确定空隙的密度，以及反映了单晶缓慢快速冷却的效果，并将空隙半径与空隙周围形成的内壁氧化膜的厚度相关联。

9. 发明授权

US07195669B2 Method of producing silicon monocrystal 有权
标题翻译：硅单晶的生产方法
公开(公告)号：US07195669B2
公开(公告)日：2007-03-27
申请号：US10521035
申请日：2003-07-07
申请人： Daisuke Wakabayashi , Masao Saito , Satoshi Sato , Jun Furukawa , Kounosuke Kitamura
发明人： Daisuke Wakabayashi , Masao Saito , Satoshi Sato , Jun Furukawa , Kounosuke Kitamura
IPC分类号： C30B25/12
CPC分类号： C30B29/06 , C30B15/203 , C30B15/22
摘要： A silicon single crystal rod (24) is pulled from a silicon melt (13) made molten by a heater (17), and a change in diameter of the silicon single crystal rod every predetermined time is fed back to a pulling speed of the silicon single crystal rod and a temperature of the heater, thereby controlling a diameter of the silicon single crystal rod. A PID control in which a PID constant is changed on a plurality of stages is applied to a method which controls the pulling speed of the silicon single crystal rod so that the silicon single crystal rod has a target diameter and a method which controls a heater temperature so that the silicon single crystal rod has the target temperature. A set pulling speed for the silicon single crystal rod is set so that V/G becomes constant, and an actual pulling speed is accurately controlled so as to match with the set pulling speed, thereby suppressing a fluctuation in diameter of the single crystal rod.
摘要翻译：从由加热器（17）熔化的硅熔体（13）拉出硅单晶棒（24），并且每隔预定时间将硅单晶棒的直径变化反馈到硅的拉伸速度单晶棒和加热器的温度，从而控制硅单晶棒的直径。将控制多个级上的PID常数的PID控制应用于控制硅单晶棒的拉拔速度的方法，使得硅单晶棒具有目标直径，以及控制加热器温度的方法使硅单晶棒具有目标温度。设定硅单晶棒的设定拉拔速度使得V / G变得恒定，并且实际的拉拔速度被精确地控制以与设定的牵引速度相匹配，从而抑制单晶棒的直径的波动。

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