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1. 发明授权

US07098455B2 Method of inspecting a circuit pattern and inspecting instrument 有权
公开(公告)号：US07098455B2
公开(公告)日：2006-08-29
申请号：US10404451
申请日：2003-04-02
申请人： Hiroyuki Shinada , Atsuko Takafuji , Takanori Ninomiya , Yuko Sasaki , Mari Nozoe , Hisaya Murakoshi , Taku Ninomiya , Yuji Kasai , Hiroshi Makino , Yutaka Kaneko , Kenji Tanimoto
发明人： Hiroyuki Shinada , Atsuko Takafuji , Takanori Ninomiya , Yuko Sasaki , Mari Nozoe , Hisaya Murakoshi , Taku Ninomiya , Yuji Kasai , Hiroshi Makino , Yutaka Kaneko , Kenji Tanimoto
IPC分类号： H01J37/28
CPC分类号： G01N23/225 , G01R31/307 , H01J37/28 , H01J2237/2817
摘要： A circuit pattern inspecting instrument includes an electron-optical system for irradiating an electron beam on a sample, an electron beam deflector, a detector for detecting secondary charged particles from the sample, and a mode setting unit for switching between a first mode and a second mode. An electron beam current is larger in the first mode than in the second mode, and an electron beam scanning speed is higher in the first mode than in the second mode. The circuit pattern inspecting instrument is configured so that first the sample is observed in the first mode, then a particular position on the sample is selected based on image data produced by an output of the detector in the first mode, and then the particular position on the sample is observed in the second mode.

2. 发明申请

US20060243908A1 Method of inspecting a circuit pattern and inspecting instrument 失效
标题翻译：检查电路图案和检查仪器的方法
公开(公告)号：US20060243908A1
公开(公告)日：2006-11-02
申请号：US11452989
申请日：2006-06-15
申请人： Hiroyuki Shinada , Atsuko Takafuji , Takanori Ninomiya , Yuko Sasaki , Mari Nozoe , Hisaya Murakoshi , Taku Ninomiya , Yuji Kasai , Hiroshi Makino , Yutaka Kaneko , Kenji Tanimoto
发明人： Hiroyuki Shinada , Atsuko Takafuji , Takanori Ninomiya , Yuko Sasaki , Mari Nozoe , Hisaya Murakoshi , Taku Ninomiya , Yuji Kasai , Hiroshi Makino , Yutaka Kaneko , Kenji Tanimoto
IPC分类号： G21K7/00
CPC分类号： G01N23/225 , G01R31/307 , H01J37/28 , H01J2237/2817
摘要： An apparatus for inspecting a sample using a scanning electron microscope includes a sample stage, a first electron-optical system to scan an electron beam of a first beam current on the sample, a second electron-optical system to scan an electron beam of a second beam current smaller than the first beam current on the sample, a mechanism to move the sample stage, a detector provided in each of the first and second electron-optical systems to detect a secondary electron. The first electron-optical system is operable in a first mode and the second electron-optical system is operable in a second mode with higher resolution than that of the first mode. In the first mode, the sample is observed while the sample stage is moved continuously, and in the second mode, the sample is observed by detecting a secondary electron using the detector while the sample stage is held stationary.
摘要翻译：使用扫描电子显微镜检查样品的装置包括样品台，用于扫描样品上的第一束电流的电子束的第一电子 - 光学系统，用于扫描第二电子束的电子束的第二电子 - 光学系统光束电流小于样品上的第一光束电流，移动样品台的机构，设置在每个第一和第二电子光学系统中的检测二次电子的检测器。第一电子 - 光学系统可在第一模式中操作，并且第二电子 - 光学系统可以以比第一模式更高的分辨率在第二模式中操作。在第一模式中，在样品台连续移动时观察样品，在第二模式中，通过在样品台保持静止时使用检测器检测二次电子来观察样品。

3. 发明授权

US07397031B2 Method of inspecting a circuit pattern and inspecting instrument 失效
标题翻译：检查电路图案和检查仪器的方法
公开(公告)号：US07397031B2
公开(公告)日：2008-07-08
申请号：US11452989
申请日：2006-06-15
申请人： Hiroyuki Shinada , Atsuko Takafuji , Takanori Ninomiya , Yuko Sasaki , Mari Nozoe , Hisaya Murakoshi , Taku Ninomiya , Yuji Kasai , Hiroshi Makino , Yutaka Kaneko , Kenji Tanimoto
发明人： Hiroyuki Shinada , Atsuko Takafuji , Takanori Ninomiya , Yuko Sasaki , Mari Nozoe , Hisaya Murakoshi , Taku Ninomiya , Yuji Kasai , Hiroshi Makino , Yutaka Kaneko , Kenji Tanimoto
IPC分类号： H01J37/28
CPC分类号： G01N23/225 , G01R31/307 , H01J37/28 , H01J2237/2817
摘要： An apparatus for inspecting a sample using a scanning electron microscope includes a sample stage, a first electron-optical system to scan an electron beam of a first beam current on the sample, a second electron-optical system to scan an electron beam of a second beam current smaller than the first beam current on the sample, a mechanism to move the sample stage, a detector provided in each of the first and second electron-optical systems to detect a secondary electron. The first electron-optical system is operable in a first mode and the second electron-optical system is operable in a second mode with higher resolution than that of the first mode. In the first mode, the sample is observed while the sample stage is moved continuously, and in the second mode, the sample is observed by detecting a secondary electron using the detector while the sample stage is held stationary.
摘要翻译：使用扫描电子显微镜检查样品的装置包括样品台，用于扫描样品上的第一束电流的电子束的第一电子 - 光学系统，用于扫描第二电子束的电子束的第二电子 - 光学系统光束电流小于样品上的第一光束电流，移动样品台的机构，设置在每个第一和第二电子光学系统中的检测二次电子的检测器。第一电子 - 光学系统可在第一模式中操作，并且第二电子 - 光学系统可以以比第一模式更高的分辨率在第二模式中操作。在第一模式中，在样品台连续移动时观察样品，在第二模式中，通过在样品台保持静止时使用检测器检测二次电子来观察样品。

4. 发明授权

US06583413B1 Method of inspecting a circuit pattern and inspecting instrument 有权
标题翻译：检查电路图案和检查仪器的方法
公开(公告)号：US06583413B1
公开(公告)日：2003-06-24
申请号：US09652606
申请日：2000-08-30
申请人： Hiroyuki Shinada , Atsuko Takafuji , Takanori Ninomiya , Yuko Sasaki , Mari Nozoe , Hisaya Murakoshi , Taku Ninomiya , Yuji Kasai , Hiroshi Makino , Yutaka Kaneko , Kenji Tanimoto
发明人： Hiroyuki Shinada , Atsuko Takafuji , Takanori Ninomiya , Yuko Sasaki , Mari Nozoe , Hisaya Murakoshi , Taku Ninomiya , Yuji Kasai , Hiroshi Makino , Yutaka Kaneko , Kenji Tanimoto
IPC分类号： G01N2300
CPC分类号： G01N23/225 , G01R31/307 , H01J37/28 , H01J2237/2817
摘要： A circuit pattern inspecting instrument includes an electron-optical system for irradiating an electron beam on a sample, an electron beam deflector, a detector for detecting secondary charged particles from the sample, and a mode setting unit for switching between a first mode and a second mode. An electron beam current is larger in the first mode than in the second mode, and an electron beam scanning speed is higher in the first mode than in the second mode. The circuit pattern inspecting instrument is configured so that first the sample is observed in the first mode, then a particular position on the sample is selected based on image data produced by an output of the detector in the first mode, and then the particular position on the sample is observed in the second mode.
摘要翻译：电路图形检查装置包括用于对样品照射电子束的电子光学系统，电子束偏转器，用于从样品检测二次带电粒子的检测器，以及用于在第一模式和第二模式之间切换的模式设置单元模式。在第一模式中电子束电流比第二模式中的电子束电流大，并且在第一模式中电子束扫描速度高于第二模式。电路图形检查装置被配置为使得首先在第一模式中观察样本，然后基于在第一模式中由检测器的输出产生的图像数据来选择样本上的特定位置，然后选择特定位置在第二模式下观察样品。

5. 发明授权

US07728294B2 Semiconductor wafer inspection tool and semiconductor wafer inspection method 失效
标题翻译：半导体晶圆检查工具和半导体晶圆检查方法
公开(公告)号：US07728294B2
公开(公告)日：2010-06-01
申请号：US11808247
申请日：2007-06-07
申请人： Takashi Hiroi , Kenji Tanimoto , Yuko Sasaki , Hiroshi Makino
发明人： Takashi Hiroi , Kenji Tanimoto , Yuko Sasaki , Hiroshi Makino
IPC分类号： H01J37/21 , H01J37/26
CPC分类号： H01J37/20 , G01R31/307 , H01J37/222 , H01J37/244 , H01J37/28 , H01J2237/2008 , H01J2237/20235 , H01J2237/20292 , H01J2237/221 , H01J2237/24564 , H01J2237/24592 , H01J2237/28
摘要： A semiconductor wafer inspection tool and a semiconductor wafer inspection method capable of conducting an inspection under appropriate conditions in any one of an NVC (Negative Voltage Contrast) mode and a PVC (Positive Voltage Contrast) mode is provided. Primary electrons 2 are irradiated onto a wafer to be inspected 6 and the irradiation position thereof is scanned in an XY direction. Secondary electrons (or reflected electrons) 10 from the wafer to be inspected 6 are controlled by a charge control electrode 5 and detected by a sensor 11. An image processor converts a detection signal from the sensor 11 to a detected image, compares the detected image with a predetermined reference image, judges defects, an overall control section 14 selects inspection conditions from recipe information for each wafer to be inspected 6 and sets a voltage to be applied to the charge control electrode 5. A Z stage 8 sets the distance between the wafer to be inspected 6 and the charge control electrode 5 according to this voltage.
摘要翻译：提供能够在适当条件下进行NVC（负电压对比度）模式和PVC（正电压对比度）模式中的任一种的半导体晶片检查工具和半导体晶片检查方法。将一次电子2照射到要检查的晶片6上，并且其XY照射位置被扫描。来自待检查晶片的二次电子（或反射电子）10由充电控制电极5控制并由传感器11检测。图像处理器将来自传感器11的检测信号转换为检测图像，通过预定的参考图像判断缺陷，总体控制部分14从每个要检查的晶片的配方信息中选择检查条件6并设置要施加到充电控制电极5的电压.Za级8设置晶片之间的距离根据该电压检查6和充电控制电极5。

6. 发明申请

US20080067381A1 Semiconductor wafer inspection tool and semiconductor wafer inspection method 失效
标题翻译：半导体晶圆检查工具和半导体晶圆检查方法
公开(公告)号：US20080067381A1
公开(公告)日：2008-03-20
申请号：US11808247
申请日：2007-06-07
申请人： Takashi Hiroi , Kenji Tanimoto , Yuko Sasaki , Hiroshi Makino
发明人： Takashi Hiroi , Kenji Tanimoto , Yuko Sasaki , Hiroshi Makino
IPC分类号： G21K7/00
CPC分类号： H01J37/20 , G01R31/307 , H01J37/222 , H01J37/244 , H01J37/28 , H01J2237/2008 , H01J2237/20235 , H01J2237/20292 , H01J2237/221 , H01J2237/24564 , H01J2237/24592 , H01J2237/28
摘要： A semiconductor wafer inspection tool and a semiconductor wafer inspection method capable of conducting an inspection under appropriate conditions in any one of an NVC (Negative Voltage Contrast) mode and a PVC (Positive Voltage Contrast) mode is provided. Primary electrons 2 are irradiated onto a wafer to be inspected 6 and the irradiation position thereof is scanned in an XY direction. Secondary electrons (or reflected electrons) 10 from the wafer to be inspected 6 are controlled by a charge control electrode 5 and detected by a sensor 11. An image processor converts a detection signal from the sensor 11 to a detected image, compares the detected image with a predetermined reference image, judges defects, an overall control section 14 selects inspection conditions from recipe information for each wafer to be inspected 6 and sets a voltage to be applied to the charge control electrode 5. A Z stage 8 sets the distance between the wafer to be inspected 6 and the charge control electrode 5 according to this voltage.
摘要翻译：提供能够在适当条件下进行NVC（负电压对比度）模式和PVC（正电压对比度）模式中的任一种的半导体晶片检查工具和半导体晶片检查方法。将一次电子2照射到要检查的晶片6上，并且其XY照射位置被扫描。来自待检查晶片的二次电子（或反射电子）10由电荷控制电极5控制，并由传感器11检测。图像处理器将来自传感器11的检测信号转换为检测图像，将检测到的图像与预定参考图像进行比较，判断缺陷，总体控制部14从每个被检查晶片的配方信息中选择检查条件6，施加到充电控制电极5的电压。 Z级8根据该电压设定待检查晶片6与充电控制电极5之间的距离。

7. 发明申请

US20070241278A1 Charged particle beam apparatus 失效
公开(公告)号：US20070241278A1
公开(公告)日：2007-10-18
申请号：US11808376
申请日：2007-06-08
申请人： Makoto Suzuki , Kenji Tanimoto , Yuko Sasaki
发明人： Makoto Suzuki , Kenji Tanimoto , Yuko Sasaki
IPC分类号： G01N23/00
CPC分类号： H01J37/21 , H01J37/265 , H01J37/28 , H01J2237/216 , H01J2237/24592 , H01J2237/2487 , H01J2237/2817 , H01J2237/2826
摘要： A charged particle beam apparatus obtains an image by detecting a generation signal inclusively indicative of secondary electrons generated from a specimen. The apparatus has an input unit for inputting current and voltage values to be applied to a charged particle optical system through which the charged particle beam travels, a memory unit for storing shape, position and physical properties of the charged particle optical system and accuracy of the applied current or voltage, an electromagnetic field calculation unit for calculating an electromagnetic field near a path of the charged particle beam, a charged particle trajectory calculation unit for calculating a trajectory of the charged particle beam in the calculated electromagnetic field, a memory unit for storing a result of the trajectory calculation and a controller for controlling the charged particle optical system on the basis of the result of the trajectory calculation.

8. 发明授权

US07435960B2 Charged particle beam apparatus 失效
标题翻译：带电粒子束装置
公开(公告)号：US07435960B2
公开(公告)日：2008-10-14
申请号：US11808376
申请日：2007-06-08
申请人： Makoto Suzuki , Kenji Tanimoto , Yuko Sasaki
发明人： Makoto Suzuki , Kenji Tanimoto , Yuko Sasaki
IPC分类号： H01J37/28 , H01J37/256
CPC分类号： H01J37/21 , H01J37/265 , H01J37/28 , H01J2237/216 , H01J2237/24592 , H01J2237/2487 , H01J2237/2817 , H01J2237/2826
摘要： A charged particle beam apparatus obtains an image by detecting a generation signal inclusively indicative of secondary electrons generated from a specimen. The apparatus has an input unit for inputting current and voltage values to be applied to a charged particle optical system through which the charged particle beam travels, a memory unit for storing shape, position and physical properties of the charged particle optical system and accuracy of the applied current or voltage, an electromagnetic field calculation unit for calculating an electromagnetic field near a path of the charged particle beam, a charged particle trajectory calculation unit for calculating a trajectory of the charged particle beam in the calculated electromagnetic field, a memory unit for storing a result of the trajectory calculation and a controller for controlling the charged particle optical system on the basis of the result of the trajectory calculation.
摘要翻译：带电粒子束装置通过检测包含从样本产生的二次电子的生成信号来获得图像。该装置具有用于输入要施加到带电粒子光束通过的带电粒子光学系统的电流和电压值的输入单元，用于存储带电粒子光学系统的形状，位置和物理特性的存储单元以及施加电流或电压的电磁场计算单元，用于计算带电粒子束路径附近的电磁场的电磁场计算单元，用于计算计算出的电磁场中的带电粒子束的轨迹的带电粒子轨迹计算单元，存储轨迹计算的结果和基于轨迹计算结果来控制带电粒子光学系统的控制器。

9. 发明授权

US07241996B2 Charged particle beam apparatus 失效
标题翻译：带电粒子束装置
公开(公告)号：US07241996B2
公开(公告)日：2007-07-10
申请号：US11183906
申请日：2005-07-19
申请人： Makoto Suzuki , Kenji Tanimoto , Yuko Sasaki
发明人： Makoto Suzuki , Kenji Tanimoto , Yuko Sasaki
IPC分类号： H01J37/28 , H01J37/256
CPC分类号： H01J37/21 , H01J37/265 , H01J37/28 , H01J2237/216 , H01J2237/24592 , H01J2237/2487 , H01J2237/2817 , H01J2237/2826
摘要： A charged particle beam apparatus obtains an image by detecting a generation signal inclusively indicative of secondary electrons generated from a specimen. The apparatus has an input unit for inputting current and voltage values to be applied to a charged particle optical system through which the charged particle beam travels, a memory unit for storing shape, position and physical properties of the charged particle optical system and accuracy of the applied current or voltage, an electromagnetic field calculation unit for calculating an electromagnetic field near a path of the charged particle beam, a charged particle trajectory calculation unit for calculating a trajectory of the charged particle beam in the calculated electromagnetic field, a memory unit for storing a result of the trajectory calculation and a controller for controlling the charged particle optical system on the basis of the result of the trajectory calculation.
摘要翻译：带电粒子束装置通过检测包含从样本产生的二次电子的生成信号来获得图像。该装置具有用于输入要施加到带电粒子光束通过的带电粒子光学系统的电流和电压值的输入单元，用于存储带电粒子光学系统的形状，位置和物理特性的存储单元以及施加电流或电压的电磁场计算单元，用于计算带电粒子束路径附近的电磁场的电磁场计算单元，用于计算计算出的电磁场中的带电粒子束的轨迹的带电粒子轨迹计算单元，存储轨迹计算的结果和基于轨迹计算结果来控制带电粒子光学系统的控制器。

10. 发明申请

US20060016990A1 Charged particle beam apparatus 失效
标题翻译：带电粒子束装置
公开(公告)号：US20060016990A1
公开(公告)日：2006-01-26
申请号：US11183906
申请日：2005-07-19
申请人： Makoto Suzuki , Kenji Tanimoto , Yuko Sasaki
发明人： Makoto Suzuki , Kenji Tanimoto , Yuko Sasaki
IPC分类号： H01J37/28 , H01J37/256
CPC分类号： H01J37/21 , H01J37/265 , H01J37/28 , H01J2237/216 , H01J2237/24592 , H01J2237/2487 , H01J2237/2817 , H01J2237/2826
摘要： A charged particle beam apparatus obtains an image by detecting a generation signal inclusively indicative of secondary electrons generated from a specimen. The apparatus has an input unit for inputting current and voltage values to be applied to a charged particle optical system through which the charged particle beam travels, a memory unit for storing shape, position and physical properties of the charged particle optical system and accuracy of the applied current or voltage, an electromagnetic field calculation unit for calculating an electromagnetic field near a path of the charged particle beam, a charged particle trajectory calculation unit for calculating a trajectory of the charged particle beam in the calculated electromagnetic field, a memory unit for storing a result of the trajectory calculation and a controller for controlling the charged particle optical system on the basis of the result of the trajectory calculation.
摘要翻译：带电粒子束装置通过检测包含从样本产生的二次电子的生成信号来获得图像。该装置具有用于输入要施加到带电粒子光束通过的带电粒子光学系统的电流和电压值的输入单元，用于存储带电粒子光学系统的形状，位置和物理特性的存储单元以及施加电流或电压的电磁场计算单元，用于计算带电粒子束路径附近的电磁场的电磁场计算单元，用于计算计算出的电磁场中的带电粒子束的轨迹的带电粒子轨迹计算单元，存储轨迹计算的结果和基于轨迹计算结果来控制带电粒子光学系统的控制器。

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