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1. 发明申请

US20110230628A1 SPOUTED BED DEVICE, POLYOLEFIN PRODUCTION SYSTEM WITH SPOUTED BED DEVICE, AND POLYOLEFIN PRODUCTION PROCESS 有权
标题翻译：发泡床装置，带泡沫床装置的聚烯烃生产系统和聚烯烃生产工艺
公开(公告)号：US20110230628A1
公开(公告)日：2011-09-22
申请号：US13116479
申请日：2011-05-26
申请人： Hiroyuki OGAWA , Hideki SATO , Hiroshi UEDA
发明人： Hiroyuki OGAWA , Hideki SATO , Hiroshi UEDA
IPC分类号： C08F2/01
CPC分类号： C08F10/00 , B01J8/0055 , B01J8/245 , B01J2208/00274 , B01J2208/00283 , B01J2208/00292 , B01J2208/00575 , C08F110/06 , C08F2/01 , C08F2/001 , C08F2/34
摘要： A spouted bed device according to the present invention includes a vertically extending cylinder; a decreasing diameter member which is formed on the cylinder, has an inside diameter that decreases progressively downward, and has a gas inlet orifice at a bottom end thereof; and a tubular portion which extends downward from an edge of the gas inlet orifice. A spouted bed is formed in a treatment zone enclosed by a top surface of the decreasing diameter member and an inner wall of the cylinder above the decreasing diameter member.
摘要翻译：根据本发明的喷射床装置包括垂直延伸的气缸; 形成在气缸上的直径减小的构件具有逐渐向下减小的内径，并且在其底端具有气体入口孔; 以及从气体入口孔的边缘向下延伸的管状部分。在由直径减小的构件的顶面包围的处理区域中形成喷射床，并且在直径减小的构件上方形成圆柱体的内壁。

2. 发明申请

US20090149611A1 POWDER TRANSFER DEVICE AND POLYOLEFIN PRODUCTION PROCESS 有权
标题翻译：粉末转移装置和聚烯烃生产工艺
公开(公告)号：US20090149611A1
公开(公告)日：2009-06-11
申请号：US12332055
申请日：2008-12-10
申请人： Hiroyuki OGAWA , Hideki SATO
发明人： Hiroyuki OGAWA , Hideki SATO
IPC分类号： C07C2/02 , B01J19/00 , C08G79/00
CPC分类号： C08F10/00 , B01J8/0025 , B01J8/003 , B01J8/125 , B01J8/189 , B01J8/245 , B01J2208/00274 , B01J2208/00681 , B01J2208/00725 , B01J2208/00769 , C08F110/06 , Y10S526/92 , C08F2/01 , C08F2/34 , C08F2/001
摘要： The present invention provides a powder transfer device that has a simple construction, yet enables the powder discharge rate to be easily controlled, as well as a polyolefin powder production process using such a powder transfer device. A powder transfer device includes a downcomer which extends downward, and a gas slider situated below the downcomer. The gas slider has, on a side thereof facing an opening at a bottom end of the downcomer, a gas dispersion plate in which a plurality of gas outlets are formed.
摘要翻译：本发明提供了一种粉末转印装置，其结构简单，而且能够容易地控制粉末排出速率，以及使用这种粉末转移装置的聚烯烃粉末生产方法。粉末输送装置包括向下延伸的降液管和位于降液管下方的气体滑块。气体滑块在其面向降液管底端的开口的一侧具有形成多个气体出口的气体分散板。

3. 发明申请

US20120245309A1 OLEFIN POLYMERIZATION REACTOR, POLYOLEFIN PRODUCTION SYSTEM, AND POLYOLEFIN PRODUCTION PROCESS 有权
标题翻译：烯烃聚合反应剂，聚烯烃生产系统和聚烯烃生产工艺
公开(公告)号：US20120245309A1
公开(公告)日：2012-09-27
申请号：US13428642
申请日：2012-03-23
申请人： Hideki SATO , Hiroyuki OGAWA
发明人： Hideki SATO , Hiroyuki OGAWA
IPC分类号： B01J19/00 , C08F2/01 , C08F10/00
CPC分类号： C08F10/00 , B01J8/003 , B01J8/1827 , B01J8/22 , B01J8/28 , B01J2208/00274 , B01J2208/00761 , B01J2208/0084 , B01J2208/0092 , B01J2208/00929 , C08F110/06 , C08F2/34 , C08F2/01
摘要： An olefin polymerization reactor is provided with a first cylinder extending vertically; a first tapered cylindrical member placed in the first cylinder, having the inner diameter decreasing progressively downward, and having a gas inlet orifice at a bottom end thereof; a first liquid supplying part supplying a liquid so that the liquid may come into contact with an outer surface of the first tapered cylindrical member; and a gas supplying part supplying an olefin-containing gas through the gas inlet orifice into a first reaction region surrounded by an inner surface of the first tapered cylindrical member and an inner surface of the first cylinder above the first tapered cylindrical member, to form a spouted bed in the first reaction region.
摘要翻译：烯烃聚合反应器具有垂直延伸的第一气缸; 放置在第一气缸中的第一锥形圆柱形构件，其内径逐渐向下减小，并且在其底端具有气体入口孔; 第一液体供应部分供应液体，使得液体可以与第一锥形圆柱形部件的外表面接触; 以及气体供给部，其通过所述气体入口孔供给含烯烃气体，形成由所述第一锥形筒状部件的内表面包围的第一反应区域和所述第一圆筒状体的上述第一圆筒状体的内表面，在第一反应区域喷出床。

4. 发明申请

US20090148354A1 OLEFIN POLYMERIZATION REACTION UNIT AND POLYOLEFIN PRODUCTION PROCESS 有权
标题翻译： OLEFIN聚合反应单元和聚烯烃生产工艺
公开(公告)号：US20090148354A1
公开(公告)日：2009-06-11
申请号：US12332065
申请日：2008-12-10
申请人： Hiroyuki OGAWA , Hideki Sato
发明人： Hiroyuki OGAWA , Hideki Sato
IPC分类号： B01J19/00
CPC分类号： C08F10/00 , C08F2/34 , C08F2/001
摘要： An olefin polymerization reaction unit includes a multistage gas phase polymerization reactor which is divided into two or more polymerization stages, in which polyolefin particles move from an initial stage to a final stage, and in which an olefin monomer-containing gas is fed from the final stage toward the initial stage. The reaction unit also includes first circulating means for feeding to the final stage a gas that is discharged from the initial stage and then cooled with a first heat exchanger, and second circulating means for feeding to one of the polymerization stages a condensate formed by condensing, with a second heat exchanger different from the first heat exchanger, a gas removed from one of the polymerization stages.
摘要翻译：烯烃聚合反应单元包括多级气相聚合反应器，其分为两个或多个聚合阶段，其中聚烯烃颗粒从初始阶段移动到最终阶段，并且其中含有烯烃单体的气体从最终的阶段到初始阶段。反应单元还包括第一循环装置，用于将从初始阶段排放然后用第一热交换器冷却的气体进料到最终级，以及第二循环装置，用于将通过冷凝形成的冷凝物进料到一个聚合阶段，与不同于第一热交换器的第二热交换器从一个聚合阶段除去气体。

5. 发明申请

US20110233591A1 PHASE MODULATION DEVICE, PHASE MODULATION DEVICE FABRICATION METHOD, CRYSTALLIZATION APPARATUS, AND CRYSTALLIZATION METHOD 审中-公开
标题翻译：相位调制装置，相位调制装置制造方法，结晶装置和结晶方法
公开(公告)号：US20110233591A1
公开(公告)日：2011-09-29
申请号：US13102679
申请日：2011-05-06
申请人： Hiroyuki OGAWA , Masato HIRAMATSU
发明人： Hiroyuki OGAWA , Masato HIRAMATSU
IPC分类号： H01L33/60 , H01L33/58
CPC分类号： G02B26/06 , B23K26/066 , G02B5/1857 , G02B5/1871 , G03F1/34 , H01L21/02422 , H01L21/02532 , H01L21/0268 , H01L21/02686
摘要： A phase shifter which modulates the phase of incident light has a light-transmitting substrate such as a glass substrate, and a phase modulator such as a concavity and convexity pattern which is formed on the laser beam incident surface of the light-transmitting substrate and modules the phase of incident light. A light-shielding portion which shields light in the peripheral portion where the optical intensity distribution decreases of the phase modulator is formed on the laser beam incident surface or exit surface of the phase shifter, thereby shielding the peripheral light in the irradiation surface of the incident laser beam.
摘要翻译：调制入射光的相位的移相器具有诸如玻璃基板的透光基板和形成在透光基板和模块的激光入射表面上的诸如凹凸图案的相位调制器入射光的相位。在移相器的激光入射面或出射面上形成遮光部，该遮光部遮挡相位调制器的光强度分布下降的周边部分的光，从而屏蔽入射的照射面的周围光激光束。

6. 发明申请

US20120208342A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120208342A1
公开(公告)日：2012-08-16
申请号：US13455633
申请日：2012-04-25
申请人： Jusuke OGURA , Hikaru KOKURA , Hideyuki KOJIMA , Toru ANEZAKI , Hiroyuki OGAWA , Junichi ARIYOSHI
发明人： Jusuke OGURA , Hikaru KOKURA , Hideyuki KOJIMA , Toru ANEZAKI , Hiroyuki OGAWA , Junichi ARIYOSHI
IPC分类号： H01L21/76
CPC分类号： H01L21/76224 , H01L21/823481 , H01L27/1052 , H01L27/11521
摘要： A method of manufacturing a semiconductor device includes forming an isolation region defining an active region in a semiconductor substrate, forming a first insulating film over the semiconductor substrate, forming a second insulating film having etching properties different from those of the first insulating film over the first insulating film, selectively removing the second insulating film from a first region over the active region and the isolation region by dry etching using a fluorocarbon-based etching gas, removing a residual film formed by the dry etching over the first insulating film by exposure in an atmosphere containing oxygen, and selectively removing the first insulating film from the first region by wet etching.
摘要翻译：制造半导体器件的方法包括在半导体衬底中形成限定有源区的隔离区，在半导体衬底上形成第一绝缘膜，形成第二绝缘膜，该第二绝缘膜具有与第一绝缘膜相同的蚀刻性能绝缘膜，通过使用基于碳氟化合物的蚀刻气体的干蚀刻从有源区域和隔离区域上的第一区域选择性地去除第二绝缘膜，通过在第一绝缘膜上暴露于第一绝缘膜上形成的残留膜含氧的气氛，通过湿式蚀刻从第一区域选择性地除去第一绝缘膜。

7. 发明申请

US20110212001A1 PHASE MODULATION DEVICE, PHASE MODULATION DEVICE FABRICATION METHOD, CRYSTALLIZATION APPARATUS, AND CRYSTALLIZATION METHOD 审中-公开
公开(公告)号：US20110212001A1
公开(公告)日：2011-09-01
申请号：US13102716
申请日：2011-05-06
申请人： Hiroyuki OGAWA , Masato Hiramatsu
发明人： Hiroyuki OGAWA , Masato Hiramatsu
IPC分类号： B01D9/00
CPC分类号： G02B26/06 , B23K26/066 , G02B5/1857 , G02B5/1871 , G03F1/34 , H01L21/02422 , H01L21/02532 , H01L21/0268 , H01L21/02686
摘要： A phase shifter which modulates the phase of incident light has a light-transmitting substrate such as a glass substrate, and a phase modulator such as a concavity and convexity pattern which is formed on the laser beam incident surface of the light-transmitting substrate and modules the phase of incident light. A light-shielding portion which shields light in the peripheral portion where the optical intensity distribution decreases of the phase modulator is formed on the laser beam incident surface or exit surface of the phase shifter, thereby shielding the peripheral light in the irradiation surface of the incident laser beam.

8. 发明申请

US20110101434A1 SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20110101434A1
公开(公告)日：2011-05-05
申请号：US12914086
申请日：2010-10-28
申请人： Hiroyuki OGAWA , Akihisa YAMAGUCHI
发明人： Hiroyuki OGAWA , Akihisa YAMAGUCHI
IPC分类号： H01L27/108 , H01L21/28
CPC分类号： H01L21/28 , H01L27/0207 , H01L27/10832 , H01L27/10882 , H01L27/10891 , H01L27/10894
摘要： A semiconductor storage device includes: memory cells including a transistor and a capacitor; bit lines; word lines; and sense amplifiers including first and second sense amplifiers, wherein the memory cells includes: a first memory cell group sharing a first auxiliary word line; and a second memory cell group sharing a second auxiliary word line, wherein the word lines includes a first word line coupled to the first auxiliary word line and a second word line coupled to the second auxiliary word line, the first word line is coupled to the first auxiliary word line in a first word line contact region, the second word line is coupled to the second auxiliary word line in a second word line contact region, the bit lines includes first and second bit lines coupled to the first sense amplifier on both sides of the first word line contact region.
摘要翻译：半导体存储装置包括：包括晶体管和电容器的存储单元; 位线字线以及包括第一和第二读出放大器的读出放大器，其中存储单元包括：共享第一辅助字线的第一存储单元组; 以及共享第二辅助字线的第二存储单元组，其中所述字线包括耦合到所述第一辅助字线的第一字线和耦合到所述第二辅助字线的第二字线，所述第一字线耦合到第一字线接触区域中的第一辅助字线，第二字线在第二字线接触区域中耦合到第二辅助字线，位线包括耦合到两侧的第一读出放大器的第一和第二位线的第一个字线接触区域。

9. 发明申请

US20090184351A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20090184351A1
公开(公告)日：2009-07-23
申请号：US12354575
申请日：2009-01-15
申请人： Hiroyuki OGAWA , Jun LIN , Hideyuki KOJIMA
发明人： Hiroyuki OGAWA , Jun LIN , Hideyuki KOJIMA
IPC分类号： H01L27/108 , H01L21/8242
CPC分类号： H01L21/763 , H01L21/823481 , H01L27/0629 , H01L27/10805 , H01L27/1085
摘要： A semiconductor device includes a semiconductor substrate, an active region formed in the semiconductor substrate and extending in a first direction, the active region including a transistor sub-region and a capacitor sub-region, a first trench extending around the transistor sub-region, an isolation layer disposed in the first trench, a second trench extending around the capacitor sub-region, a first transistor including a first insulating layer disposed on the transistor sub-region, the first transistor including a first conductive layer disposed on the first insulating layer, and a first capacitor including a second insulating layer extending over the capacitor sub-region and a sidewall of the second trench, the first capacitor including a second conductive layer disposed on the second insulating layer, the active region having an end portion in the first direction opposite to the transistor sub-region and extending across the first capacitor.
摘要翻译：半导体器件包括半导体衬底，形成在半导体衬底中并沿第一方向延伸的有源区，包括晶体管子区和电容器子区的有源区，围绕晶体管子区延伸的第一沟槽，设置在所述第一沟槽中的隔离层，围绕所述电容器子区域延伸的第二沟槽，包括设置在所述晶体管子区域上的第一绝缘层的第一晶体管，所述第一晶体管包括设置在所述第一绝缘层上的第一导电层以及包括在所述电容器子区域上延伸的第二绝缘层和所述第二沟槽的侧壁的第一电容器，所述第一电容器包括设置在所述第二绝缘层上的第二导电层，所述有源区域具有在所述第一绝缘层方向与晶体管子区域相反并延伸穿过第一电容器。

10. 发明申请

US20130078795A1 ETCH STOP LAYER FOR MEMORY CELL RELIABILITY IMPROVEMENT 有权
标题翻译： ETCH停止层用于存储器单元可靠性改进
公开(公告)号：US20130078795A1
公开(公告)日：2013-03-28
申请号：US13617291
申请日：2012-09-14
申请人： Hiroyuki KINOSHITA , Angela HUI , Hsiao-Han THIO , Kuo-Tung CHANG , Minh VAN NGO , Hiroyuki OGAWA
发明人： Hiroyuki KINOSHITA , Angela HUI , Hsiao-Han THIO , Kuo-Tung CHANG , Minh VAN NGO , Hiroyuki OGAWA
IPC分类号： H01L21/02
CPC分类号： H01L21/0217 , H01L21/28273 , H01L29/66825 , H01L29/7881
摘要： A memory device and a method of making the memory device are provided. A first dielectric layer is formed on a substrate, a floating gate is formed on the first dielectric layer, a second dielectric layer is formed on the floating gate, a control gate is formed on the second dielectric layer, and at least one film, including a conformal film, is formed over a surface of the memory device.
摘要翻译：提供存储器件和制造存储器件的方法。在基板上形成第一电介质层，在第一电介质层上形成浮栅，在浮栅上形成第二电介质层，在第二电介质层上形成控制栅，还包括至少一层，保形膜形成在存储器件的表面上。

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