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1. 发明授权

US4884120A Semiconductor device and method for making the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US4884120A
公开(公告)日：1989-11-28
申请号：US16787
申请日：1987-02-20
申请人： Hiroshi Mochizuki , Reiji Tamaki , Junichi Arima , Masaaki Ikegami , Eisuke Tanaka , Kenji Saito
发明人： Hiroshi Mochizuki , Reiji Tamaki , Junichi Arima , Masaaki Ikegami , Eisuke Tanaka , Kenji Saito
IPC分类号： H01L23/522 , H01L21/28 , H01L21/316 , H01L21/768 , H01L27/00 , H01L29/49
CPC分类号： H01L21/31683 , H01L21/7684 , H01L21/76877 , H01L21/76888
摘要： An improved interconnection structure and method for forming the interconnection in a semiconductor device having multilayered interconnection structure in which a contact hole for electrically connecting a first layer interconnection to a predetermined region of a semiconductor substrate and a through hole for electrically connecting a second layer interconnection to the first layer interconnection are formed in the regions overlapping with each other in planer layout. In the interconnection structure of the present invention, hillocks effective to compensate for the contact hole step are formed in the first layer interconnection only in the region of the contact hole of the first layer interconnection. In the method for forming the interconnection according to the present invention, a first layer interconnection is formed and a chemical conversion process is selectively performed to form a film which is more rigid than the first layer interconnection film on a predetermined region of the first layer interconnection film, and then a heat process is performed to generate hillocks only at the region of the contact hole of the first layer interconnection film. The second layer interconnection film is formed thereafter.
摘要翻译：一种用于在具有多层互连结构的半导体器件中形成互连的改进的互连结构和方法，其中用于将第一层互连电连接到半导体衬底的预定区域的接触孔和用于将第二层互连电连接到第一层互连形成在以平面布置彼此重叠的区域中。在本发明的互连结构中，仅在第一层互连的接触孔的区域中，在第一层互连中形成有效补偿接触孔台阶的小丘。在根据本发明的形成互连的方法中，形成第一层互连，并且选择性地执行化学转换处理以在第一层互连的预定区域上形成比第一层互连膜更刚性的膜膜，然后进行热处理，仅在第一层互连膜的接触孔的区域产生小丘。此后形成第二层互连膜。

2. 发明授权

US4731516A Laser polishing semiconductor wafer 失效
标题翻译：激光抛光半导体晶圆
公开(公告)号：US4731516A
公开(公告)日：1988-03-15
申请号：US917124
申请日：1986-10-09
申请人： Takeshi Noguchi , Yoshihiro Hirata , Junichi Arima , Eisuke Tanaka , Reiji Tamaki , Masanori Obata
发明人： Takeshi Noguchi , Yoshihiro Hirata , Junichi Arima , Eisuke Tanaka , Reiji Tamaki , Masanori Obata
IPC分类号： B23K26/00 , H01L21/20 , H01L21/268 , H01L21/304
CPC分类号： H01L21/268 , H01L21/2026 , Y10S117/904
摘要： The rough ground rear surface 13b of a semiconductor wafer 11 is mirror-polished by localized irradiation with a focused laser beam 21. The wafer is moved relative to the beam, and the melt puddle formed by the beam thereafter recrystallizes at its trailing edge 24 to leave a mirror smooth rear surface 13c.
摘要翻译：通过用聚焦激光束21的局部照射将半导体晶片11的粗糙的后表面13b镜面抛光。晶片相对于光束移动，并且由光束形成的熔融熔池随后在其后缘24处重结晶至留下镜面光滑的后表面13c。

3. 发明授权

US4896204A Semiconductor device and method of manufacturing thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US4896204A
公开(公告)日：1990-01-23
申请号：US224172
申请日：1988-07-25
申请人： Yoshihiro Hirata , Reiji Tamaki , Takeshi Noguchi , Junichi Arima , Kenji Saitoh , Shigeru Harada
发明人： Yoshihiro Hirata , Reiji Tamaki , Takeshi Noguchi , Junichi Arima , Kenji Saitoh , Shigeru Harada
IPC分类号： H01L23/522 , H01L21/02 , H01L21/3205 , H01L21/60 , H01L21/768 , H01L23/532
CPC分类号： H01L23/53223 , H01L23/5329 , H01L2924/0002
摘要： An Al layer (6) is first formed to cover an opening region (9) for interconnection in a semiconductor device. Then, an Al-Si-Ti layer (7) having a higher degree of hardness than that of the Al layer (6) is formed on the Al layer (6) and subsequently a mixture layer (8) of aluminum hydrate and aluminum oxide is formed on the surface of the Al-Si-Ti layer (7). Thus, a multilayered film of electrode and interconnection (11) is formed.
摘要翻译：首先形成Al层（6）以覆盖用于半导体器件中的互连的开口区域（9）。然后，在Al层（6）上形成硬度比Al层（6）高的Al-Si-Ti层（7），随后形成水合铝和氧化铝的混合层（8）形成在Al-Si-Ti层（7）的表面上。因此，形成电极和互连（11）的多层膜。

4. 发明授权

US4983547A Method of forming a silicide film 失效
标题翻译：形成硅化物膜的方法
公开(公告)号：US4983547A
公开(公告)日：1991-01-08
申请号：US260390
申请日：1988-10-20
申请人： Junichi Arima , Yoshihiro Hirata , Hiroshi Harada , Isao Furuta , Shigeru Harada , Reiji Tamaki
发明人： Junichi Arima , Yoshihiro Hirata , Hiroshi Harada , Isao Furuta , Shigeru Harada , Reiji Tamaki
IPC分类号： H01L23/00 , H01L21/28
CPC分类号： H01L21/28097 , Y10S148/147
摘要： In a method of forming a metallic silicide film on a substrate, a metallic silicide film containing silicon at a concentration higher than stoichiometric, is deposited on a substrate. A film of aluminum or aluminum alloy is then deposited on the metallic silicide film. Subsequently, a heat treatment is conducted to cause precipitation of silicon from the metallic silicide film to the aluminum, thereby to lower the silicon concentration in the silicide film.
摘要翻译：在基板上形成金属硅化物膜的方法中，将含有浓度高于化学计量的硅的金属硅化物膜沉积在基板上。然后将铝或铝合金膜沉积在金属硅化物膜上。随后，进行热处理以使硅从金属硅化物膜析出至铝，从而降低硅化物膜中的硅浓度。

5. 发明授权

US5488014A Interconnection structure of semiconductor integrated circuit device and manufacturing method thererfor 失效
标题翻译：半导体集成电路器件的互连结构及其制造方法
公开(公告)号：US5488014A
公开(公告)日：1996-01-30
申请号：US213417
申请日：1994-03-15
申请人： Shigeru Harada , Junichi Arima , Noriaki Fujiki
发明人： Shigeru Harada , Junichi Arima , Noriaki Fujiki
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/768 , H01L23/522 , H01L23/532 , H01L21/44 , H01L21/48
CPC分类号： H01L23/53223 , H01L23/5226 , H01L2924/0002
摘要： A surface of a first aluminum interconnection layer in a connection hole is exposed to a plasma of oxygen or fluorine-containing gas during the forming step of the connection hole. In order to remove the thin deterioration layer which forms as a result, sputter etching is effected by an argon ion. There are residual particles of the oxide and fluoride of aluminum on the surface of the first aluminum interconnection layer. A titanium layer is formed on the insulating layer to be in contact with the surface of the first aluminum layer through the through hole. A titanium compound layer is formed on the titanium layer. A second aluminum layer is formed on the titanium compound layer. A heat treatment is effected to decompose the residual particles and to form an intermetallic compound (TiAl.sub.3).
摘要翻译：在连接孔的形成步骤期间，连接孔中的第一铝互连层的表面暴露于氧或含氟气体的等离子体。为了除去形成的薄劣化层，通过氩离子进行溅射蚀刻。在第一铝互连层的表面上存在铝的氧化物和氟化物的残留颗粒。在绝缘层上形成钛层，以通过通孔与第一铝层的表面接触。在钛层上形成钛化合物层。在钛化合物层上形成第二铝层。进行热处理以分解残余颗粒并形成金属间化合物（TiAl 3）。

6. 发明授权

US4720620A Method of cutting metal interconnections in a semiconductor device 失效
标题翻译：在半导体器件中切割金属互连的方法
公开(公告)号：US4720620A
公开(公告)日：1988-01-19
申请号：US769768
申请日：1985-08-27
申请人： Junichi Arima
发明人： Junichi Arima
IPC分类号： H01L21/3213 , B23K26/00 , B23K26/12 , H01L21/82
CPC分类号： B23K26/123 , B23K26/12 , B23K26/127 , Y10S438/94
摘要： In a method of cutting metal interconnections in a semiconductor device according to the present invention, a semiconductor wafer (5) which has metal interconnections having a high melting point is placed in an oxygen atmosphere (9) within a chamber (6), and laser beams (4) are irradiated through an optical system (2) and an optical beam positioner (3) on the high melting point metal interconnections while maintaining the interior of the chamber (6) at a vacuum of 1 to 10 mTorr, and introducing oxygen from an oxygen inlet port (7) under a pressure of 1 to 1.5 Torr. to sublimate and cut the high melting point metal interconnections.
摘要翻译：在根据本发明的半导体器件中切割金属互连的方法中，将具有高熔点的金属互连的半导体晶片（5）放置在室（6）内的氧气氛（9）中，并且激光在高熔点金属互连上通过光学系统（2）和光束定位器（3）照射光束（4），同时将室（6）的内部保持在1至10mTorr的真空，并且引入氧从氧气入口（7）在1至1.5托的压力下进行。以升华和切割高熔点金属互连。

7. 发明授权

US5270253A Method of producing semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US5270253A
公开(公告)日：1993-12-14
申请号：US719109
申请日：1991-06-24
申请人： Hajime Arai , Isao Furuta , Hidefumi Kuroki , Junichi Arima , Yoshihiro Hirata , Shigeru Harada
发明人： Hajime Arai , Isao Furuta , Hidefumi Kuroki , Junichi Arima , Yoshihiro Hirata , Shigeru Harada
IPC分类号： H01L21/60 , H01L23/485 , H01L23/532 , H01L21/44
CPC分类号： H01L23/5328 , H01L23/53209 , H01L24/02 , H01L24/11 , H01L2224/0401 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , Y10S148/026
摘要： A semiconductor device which includes an electrode portion formed on a wafer; a passivation film deposited on said wafer except for said electrode portion; an insulating film deposited only on said passivation film so as to have a predetermined thickness and so as to include a concave portion over said electrode portion; and conductive material embedded in said concave portion at least up to the height of said insulating film, wherein the conductive material is intended to be used for bonding to a substrate.
摘要翻译：一种半导体器件，包括形成在晶片上的电极部分; 除了所述电极部分之外沉积在所述晶片上的钝化膜; 仅在所述钝化膜上沉积以便具有预定厚度并且在所述电极部分上包括凹部的绝缘膜; 以及嵌入所述凹部中的导电材料至少高达所述绝缘膜的高度，其中所述导电材料旨在用于与基底结合。

8. 发明授权

US4745258A Apparatus for laser-cutting metal interconnections in a semiconductor device 失效
标题翻译：用于在半导体器件中激光切割金属互连的装置
公开(公告)号：US4745258A
公开(公告)日：1988-05-17
申请号：US2264
申请日：1987-01-12
申请人： Junichi Arima
发明人： Junichi Arima
IPC分类号： B23K26/12 , B23K26/40 , H01L21/768 , H01L23/525 , B23K26/00
CPC分类号： B23K26/123 , B23K26/40 , H01L21/76894 , H01L23/5258 , B23K2201/40 , B23K2203/50 , H01L2924/0002
摘要： In apparatus for cutting metal interconnections in a semiconductor device according to the present invention, a semiconductor wafer (5) which has metal interconnections having a high melting point is placed in an oxygen atmosphere (9) within a chamber (6), and laser beams (4) are irradiated through an optical system (2) and an optical beam positioner (3) on the high melting point metal interconnections while maintaining the interior at the chamber (6) in a vacuum of 1 to 10 mTorr., and introducing oxygen from an oxygen inlet port (7) under a pressure of 1 to 1.5 Torr. to sublimate and cut the high melting point metal interconnections.
摘要翻译：在根据本发明的用于切割半导体器件中的金属互连的设备中，将具有高熔点的金属互连的半导体晶片（5）放置在室（6）内的氧气氛（9）中，并且激光束（4）在高熔点金属互连上通过光学系统（2）和光束定位器（3）照射，同时在1至10mTorr的真空中将腔室（6）内部保持在内部，并引入氧气从氧气入口（7）在1至1.5托的压力下进行。以升华和切割高熔点金属互连。

9. 发明授权

US5313101A Interconnection structure of semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件的互连结构
公开(公告)号：US5313101A
公开(公告)日：1994-05-17
申请号：US104520
申请日：1993-08-10
申请人： Shigeru Harada , Junichi Arima , Noriaki Fujiki
发明人： Shigeru Harada , Junichi Arima , Noriaki Fujiki
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/768 , H01L23/522 , H01L23/532 , H01L23/48 , H01L29/40
CPC分类号： H01L23/53223 , H01L23/5226 , H01L2924/0002
摘要： A semiconductor integrated circuit device has an interconnection structure in which multilayer aluminum interconnection layers are connected through a connection hole. A first aluminum interconnection layer is formed on a main surface of said semiconductor substrate. An insulating layer is formed on the first aluminum interconnection layer and has a through hole extending to a surface of the first aluminum interconnection layer. A second aluminum interconnection layer is formed on the insulating layer and is electrically connected to the first aluminum interconnection layer through the through hole. The second aluminum interconnection layer includes a titanium layer, a titanium nitride layer and an aluminum alloy layer. The titanium layer is formed on the insulating layer to be in contact with the surface of the first aluminum interconnection layer through the through hole. The titanium nitride layer is formed on the titanium layer. The aluminum alloy layer is formed on the titanium nitride layer. An electrical contact resistance between the first and second aluminum interconnection layers is stabilized, and resistance against the electron-migration and stress-migration is improved in the interconnection structure.
摘要翻译：半导体集成电路器件具有通过连接孔连接多层铝互连层的互连结构。第一铝互连层形成在所述半导体衬底的主表面上。绝缘层形成在第一铝互连层上，并且具有延伸到第一铝互连层的表面的通孔。第二铝互连层形成在绝缘层上，并通过通孔与第一铝互连层电连接。第二铝互连层包括钛层，氮化钛层和铝合金层。在绝缘层上形成钛层，以通过贯通孔与第一铝互连层的表面接触。在钛层上形成氮化钛层。在氮化钛层上形成铝合金层。第一和第二铝互连层之间的电接触电阻是稳定的，并且互连结构中电子迁移和应力迁移的抵抗力得到改善。

10. 发明授权

US4922321A Semiconductor device and a method of producing same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US4922321A
公开(公告)日：1990-05-01
申请号：US6922
申请日：1987-01-27
申请人： Hajime Arai , Isao Furuta , Hidefumi Kuroki , Junichi Arima , Yoshihiro Hirata , Shigeru Harada
发明人： Hajime Arai , Isao Furuta , Hidefumi Kuroki , Junichi Arima , Yoshihiro Hirata , Shigeru Harada
IPC分类号： H01L21/60 , H01L23/485 , H01L23/532
CPC分类号： H01L24/11 , H01L23/53209 , H01L23/5328 , H01L24/02 , H01L2224/0401 , H01L2224/1147 , H01L2224/1148 , H01L2224/13099 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/014
摘要： A semiconductor device which includes an electrode portion formed on a wafer; a passivation film deposited on said wafer except for said electrode portion; an insulating film deposited only on said passivation film so as to have a predetermined thickness anad so as to include a concave portion over said electrode portion; and conductive material embedded in said concave portion at least up to the height of said insulating film, wherein the conductive material is intended to be used for bonding to a substrate.
摘要翻译：一种半导体器件，包括形成在晶片上的电极部分; 除了所述电极部分之外沉积在所述晶片上的钝化膜; 仅在所述钝化膜上沉积以便具有预定厚度的绝缘膜，以便在所述电极部分上方包括凹部; 以及嵌入所述凹部中的导电材料至少高达所述绝缘膜的高度，其中所述导电材料旨在用于与基底结合。

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