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1. 发明申请

US20170271210A1 SUBSTRATE DIVIDING METHOD 审中-公开
公开(公告)号：US20170271210A1
公开(公告)日：2017-09-21
申请号：US15617431
申请日：2017-06-08
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Yoshimaro FUJII , Fumitsugu FUKUYO , Kenshi FUKUMITSU , Naoki UCHIYAMA
IPC分类号： H01L21/78 , B28D5/00 , H01L21/768 , B23K26/40 , H01L23/00 , H01L21/306 , B23K26/0622 , B23K26/00 , H01L21/304
CPC分类号： H01L21/78 , B23K26/0057 , B23K26/0622 , B23K26/40 , B23K26/53 , B23K2103/50 , B23K2203/50 , B28D5/00 , B28D5/0011 , H01L21/268 , H01L21/304 , H01L21/30604 , H01L21/6836 , H01L21/76894 , H01L23/544 , H01L23/562 , H01L2221/68327 , H01L2221/68336 , H01L2223/5446 , H01L2924/00 , H01L2924/0002
摘要： A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

2. 发明申请

US20160111333A1 SUBSTRATE DIVIDING METHOD 有权
公开(公告)号：US20160111333A1
公开(公告)日：2016-04-21
申请号：US14984066
申请日：2015-12-30
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Yoshimaro FUJII , Fumitsugu FUKUYO , Kenshi FUKUMITSU , Naoki UCHIYAMA
IPC分类号： H01L21/78 , H01L21/304 , H01L21/268
CPC分类号： H01L21/78 , B23K26/0057 , B23K26/0622 , B23K26/40 , B23K26/53 , B23K2103/50 , B23K2203/50 , B28D5/00 , B28D5/0011 , H01L21/268 , H01L21/304 , H01L21/30604 , H01L21/6836 , H01L21/76894 , H01L23/544 , H01L23/562 , H01L2221/68327 , H01L2221/68336 , H01L2223/5446 , H01L2924/00 , H01L2924/0002
摘要： A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

3. 发明授权

US09142458B2 Substrate dividing method 有权
公开(公告)号：US09142458B2
公开(公告)日：2015-09-22
申请号：US14517552
申请日：2014-10-17
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Yoshimaro Fujii , Fumitsugu Fukuyo , Kenshi Fukumitsu , Naoki Uchiyama
IPC分类号： H01L21/00 , H01L21/78 , H01L21/768 , B23K26/00 , B23K26/06 , B23K26/40 , B28D5/00 , H01L21/304 , H01L23/00
CPC分类号： H01L21/78 , B23K26/0057 , B23K26/0622 , B23K26/40 , B23K26/53 , B23K2103/50 , B23K2203/50 , B28D5/00 , B28D5/0011 , H01L21/268 , H01L21/304 , H01L21/30604 , H01L21/6836 , H01L21/76894 , H01L23/544 , H01L23/562 , H01L2221/68327 , H01L2221/68336 , H01L2223/5446 , H01L2924/00 , H01L2924/0002
摘要： A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

4. 发明申请

US20130316517A1 SUBSTRATE DIVIDING METHOD 有权
公开(公告)号：US20130316517A1
公开(公告)日：2013-11-28
申请号：US13953443
申请日：2013-07-29
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Yoshimaro FUJII , Fumitsugu FUKUYO , Kenshi FUKUMITSU , Naoki UCHIYAMA
IPC分类号： H01L21/78
CPC分类号： H01L21/78 , B23K26/0057 , B23K26/0622 , B23K26/40 , B23K26/53 , B23K2103/50 , B23K2203/50 , B28D5/00 , B28D5/0011 , H01L21/268 , H01L21/304 , H01L21/30604 , H01L21/6836 , H01L21/76894 , H01L23/544 , H01L23/562 , H01L2221/68327 , H01L2221/68336 , H01L2223/5446 , H01L2924/00 , H01L2924/0002
摘要： A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

5. 发明授权

US07566635B2 Substrate dividing method 有权
标题翻译：基板分割方法
公开(公告)号：US07566635B2
公开(公告)日：2009-07-28
申请号：US11332228
申请日：2006-01-17
申请人： Yoshimaro Fujii , Fumitsugu Fukuyo , Kenshi Fukumitsu , Naoki Uchiyama
发明人： Yoshimaro Fujii , Fumitsugu Fukuyo , Kenshi Fukumitsu , Naoki Uchiyama
IPC分类号： H01L21/00
CPC分类号： H01L21/78 , B23K26/0057 , B23K26/0622 , B23K26/40 , B23K26/53 , B23K2103/50 , B23K2203/50 , B28D5/00 , B28D5/0011 , H01L21/268 , H01L21/304 , H01L21/30604 , H01L21/6836 , H01L21/76894 , H01L23/544 , H01L23/562 , H01L2221/68327 , H01L2221/68336 , H01L2223/5446 , H01L2924/00 , H01L2924/0002
摘要： A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.
摘要翻译：一种衬底分割方法，其可以在防止发生破裂和破裂的同时使衬底细分割。该基板分割方法包括以下步骤：将具有形成有功能元件19的正面3的半导体基板1照射在基板内，同时将聚光点定位在基板内，从而形成包含熔融处理区域的改质区域在半导体衬底1内进行多光子吸收，并且使包含熔融处理区域的改性区域形成切割起点区域; 在形成用于切割的起点区域的步骤之后，研磨半导体衬底1的后表面21，使得半导体衬底1达到预定厚度。

6. 发明授权

US6140603A Micro-cleavage method for specimen preparation 有权
标题翻译：样品制备的微裂解法
公开(公告)号：US6140603A
公开(公告)日：2000-10-31
申请号：US283000
申请日：1999-03-31
申请人： Ruey-Lian Hwang , Yung-Sheng Huang
发明人： Ruey-Lian Hwang , Yung-Sheng Huang
IPC分类号： B23K26/40 , H01L21/304 , B23K26/00
CPC分类号： H01L21/3043 , B23K26/362 , B23K26/40 , B23K2203/50
摘要： A micro-cleavage method for preparing a semiconductor specimen for examination by an optical or electron microscopic is disclosed. The method can be carried out by hand and thus no expensive equipment such as a polishing machine is necessary. In the method, at least two bird's beak marks are cut in a top surface of a silicon wafer that contains a target, i.e., a defect or a circuit to be examined. The bird's beak marks are formed by a wide scribe line and a narrow scribe line overlapped together. The wide scribe line of the bird's beak mark is used for visual alignment with the edge of a rigid substrate, while the fine scribe line is utilized for initiating a crack when a bending stress is applied on the bird's beak mark. The bird's beak mark can be made by using a laser cutter after a wafer slice which contains the target area is first cleaved by mechanical means such as a diamond knife. A first bird's beak mark is formed at the cleaved edge of the slice and a second bird's beak mark is formed with its fine scribe line oriented toward the target. When a bending stress is applied on the top surface of the silicon slice, stress concentrates on the bird's beak marks and creates a fine crack to propagate along a crystallographic plane in the wafer toward the target thus exposing the target in a fractured surface.
摘要翻译：公开了一种通过光学或电子显微镜制备用于检查的半导体样品的微裂纹方法。该方法可以手工进行，因此不需要昂贵的设备如抛光机。在该方法中，在包含目标物，即缺陷或待检查的电路的硅晶片的顶表面中切割至少两个鸟的喙标记。鸟的喙标记由宽的划线和狭窄的划线重叠在一起形成。鸟喙标记的宽划线用于与刚性基底的边缘的视觉对准，而当在鸟的喙标记上施加弯曲应力时，细切割线用于引发裂纹。可以通过使用激光切割机在包含目标区域的晶片切片之后首先用诸如金刚石刀等机械手段切割来制作鸟的喙标记。在切片的切割边缘处形成第一只鸟的喙标记，并且形成第二个鸟的喙标记，其细的划线朝向目标。当在硅片的顶表面上施加弯曲应力时，应力集中在鸟的喙痕上，并产生细小的裂纹，沿着晶片中的晶面朝向靶传播，从而将目标暴露在断裂的表面中。

7. 发明授权

US6130405A Laser drilling holes in a cylindrical workpiece 有权
标题翻译：圆柱形工件中的激光钻孔
公开(公告)号：US6130405A
公开(公告)日：2000-10-10
申请号：US151648
申请日：1998-09-10
申请人： Gary Loringer
发明人： Gary Loringer
IPC分类号： F02C7/00 , B23K26/00 , B23K26/04 , B23K26/06 , B23K26/08 , B23K26/38
CPC分类号： B23K26/046 , B23K26/048 , B23K26/0823 , B23K26/382 , B23K26/384 , B23K26/40 , B23K2203/02 , B23K2203/14 , B23K2203/26 , B23K2203/50
摘要： A process is provided for laser drilling a plurality of holes in a row around the circumference of a cylindrical workpiece by continuously rotating the workpiece, sequentially impacting each hole location with a laser pulse and repetitively and sequentially impacting each hole location with a subsequent laser pulse to drill through the workpiece.
摘要翻译：提供了一种用于通过连续旋转工件来激光钻取围绕圆柱形工件的圆周的多个孔的过程，用激光脉冲顺序地冲击每个孔位置，并且用随后的激光脉冲重复并顺序地影响每个孔位置钻穿工件。

8. 发明授权

US6107181A Method of forming bumps and template used for forming bumps 失效
公开(公告)号：US6107181A
公开(公告)日：2000-08-22
申请号：US015265
申请日：1998-01-29
申请人： Masayuki Kitajima , Yutaka Noda , Yoshitaka Muraoka
发明人： Masayuki Kitajima , Yutaka Noda , Yoshitaka Muraoka
IPC分类号： B23K26/10 , B23K26/38 , C03C15/00 , C03C23/00 , H01L21/60 , H01L21/68 , H05K3/00 , H05K3/34 , H01L21/44
CPC分类号： B23K26/10 , B23K26/382 , B23K26/40 , B23K26/402 , C03C15/00 , C03C23/0025 , H01L21/6835 , H01L24/11 , H05K3/3478 , B23K2203/16 , B23K2203/30 , B23K2203/42 , B23K2203/50 , H01L2224/05568 , H01L2224/05573 , H01L2224/11003 , H01L2224/11334 , H01L2224/13099 , H01L2224/16 , H01L2224/75 , H01L2224/75743 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/0101 , H01L2924/01033 , H01L2924/01047 , H01L2924/014 , H01L2924/07802 , H01L2924/12042 , H01L2924/15311 , H05K2203/0113 , H05K2203/0338 , H05K2203/041 , H05K2203/0525 , H05K2203/082 , H05K2203/107 , H05K3/002 , H05K3/0029 , H05K3/0055 , Y10S438/963 , Y10T29/49144
摘要： A method of manufacturing a template having through-holes for attracting and supporting electrically conductive balls by vacuum suction is disclosed. The through-holes are formed by etching and the side walls of the through-holes are smoothed by irradiation, with laser beams, of the side walls of the through-holes. A template and metallic bumps can be formed using this method. Alternatively, the template can be formed in a two-layered structure.

9. 发明授权

US6090330A Laser processing method 失效
标题翻译：激光加工方法
公开(公告)号：US6090330A
公开(公告)日：2000-07-18
申请号：US5375
申请日：1998-01-09
申请人： Tomohiro Gawa , Akira Wada , Ken Muneyuki , Souji Yamamoto , Masahiro Kawata , Akiko Nakamura , Kenji Kasai
发明人： Tomohiro Gawa , Akira Wada , Ken Muneyuki , Souji Yamamoto , Masahiro Kawata , Akiko Nakamura , Kenji Kasai
IPC分类号： B23K26/08 , B23K26/38 , H05K3/00 , B23K26/00
CPC分类号： B23K26/0853 , B23K26/08 , B23K26/082 , B23K26/382 , B23K26/40 , B23K26/402 , H05K3/0026 , B23K2203/16 , B23K2203/40 , B23K2203/42 , B23K2203/50 , H05K2203/0165
摘要： The two ends of an article to be processed which is in the form of a sheet are held by means of a fixed clamp and a movable clamp, the article being held by applying bias by means of a biasing cylinder to the movable clamp in a direction such as would separate it from the fixed clamp and hole-forming processing being performed by means of a laser beam. Since the sheet-like article is held under tension, flatness of even a thin sheet can be maintained and since the underneath space is open, there is no reflection of laser light after passing through the holes that are formed and any processing waste can easily be removed.
摘要翻译：以片材形式被处理的物品的两端通过固定夹具和可移动夹具保持，所述物品通过偏压缸施加偏压而保持在可动夹具的方向上例如将其与固定夹具分离，并且通过激光束执行孔形成处理。由于片状制品保持张力，所以即使是薄片也能够保持平整度，并且由于下面的空间是开放的，所以在穿过形成的孔之后没有激光的反射，并且任何处理废物可以容易地删除。

10. 发明授权

US6060687A Method of laser cutting metal workpieces 失效
标题翻译：激光切割金属工件的方法
公开(公告)号：US6060687A
公开(公告)日：2000-05-09
申请号：US142953
申请日：1998-09-15
申请人： Mark Faerber
发明人： Mark Faerber
IPC分类号： B23K26/12 , B23K26/40
CPC分类号： B23K26/123 , B23K26/125 , B23K26/40 , B23K2203/50
摘要： The invention concerns a method for laser cutting metal workpieces which contain bound oxygen by using a mixture of ay least one inert gas and hydrogen as the cutting gas. The hydrogen protein of the cutting gas prevents oxygen which is from the metal during the cutting process from causing undesired oxidation in the region of the cutting point. The formation of burrs and furrows is thus prevented.
摘要翻译： PCT No.PCT / EP97 / 01051 Sec。 371日期：1998年9月15日 102（e）1998年9月15日PCT PCT 1997年3月3日PCT公布。公开号WO97 / 34730 日期1997年9月25日本发明涉及一种通过使用至少一种惰性气体和氢气作为切割气体的混合物来激光切割金属工件的方法，该方法含有结合氧。切割气体的氢蛋白防止在切割过程中来自金属的氧在切割点的区域中引起不期望的氧化。因此防止了毛刺和沟的形成。

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