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1. 发明授权

US06179911B2 Method for manufacturing single crystal 有权
标题翻译：单晶制造方法
公开(公告)号：US06179911B2
公开(公告)日：2001-01-30
申请号：US09425019
申请日：1999-10-25
申请人： Junsuke Tomioka , Hiroshi Inagaki , Fumitaka Ishikawa
发明人： Junsuke Tomioka , Hiroshi Inagaki , Fumitaka Ishikawa
IPC分类号： C30B1520
CPC分类号： C30B29/06 , C30B15/14 , Y10S117/917 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： This invention provides a method and a apparatus capable of manufacturing single crystals with an oxygen density of less than 12×1017 atoms/cm3 or less than 10×1017 atoms/cm3, and wherein the oxygen density of the single crystal produced is uniformly distributed along its longitudinal axis. The electrical power inputted into the main heater 6 surrounding the quartz crucible 4 and the top heater 9 shaped like a reverse frustrated cone and disposed above the quartz crucible 4, is controlled to keep the temperature of the melt 5 in a preset range during the process of pulling up the single crystal silicon 10. When combining the main heater 6 and the top heater 9, the heat emitted from the main heater 6 can be kept small, and the heat load on the quartz crucible 4 and the amount of oxygen released from the quartz crucible 4 and dissloved into melt 5 can be reduced. Therefore, a single crystal of low oxygen density and with uniformly distributed oxygen density along its longitudinal axis can be obtained. Furthermore, the single-crystal silicon 10 can be assigned a proper thermal history. In the above process, if a magnetic field is applied to the melt, then single crystals of much lower oxygen density can be obtained.
摘要翻译：本发明提供一种能够制造氧密度小于12×10 17原子/ cm 3或小于10×10 17原子/ cm 3的单晶的方法和装置，其中所制造的单晶的氧密度沿其纵向轴线均匀分布。控制输入到围绕石英坩埚4的主加热器6的电力以及设置在石英坩埚4上方的倒塌锥体形状的顶部加热器9，以在熔融过程中将熔体5的温度保持在预设范围内拉起单晶硅10.当组合主加热器6和顶部加热器9时，可以将从主加热器6发射的热量保持较小，并且石英坩埚4上的热负荷和从可以减少石英坩埚4并且被分解成熔体5。因此，可以获得具有低氧密度并沿着其纵轴具有均匀分布的氧密度的单晶。此外，单晶硅10可以被赋予适当的热历史。在上述过程中，如果对熔体施加磁场，则可以获得低得多的氧密度的单晶。

2. 发明授权

US5951759A Apparatus of pulling up single crystals 失效
标题翻译：提取单晶的装置
公开(公告)号：US5951759A
公开(公告)日：1999-09-14
申请号：US950435
申请日：1997-10-15
申请人： Hiroshi Inagaki , Fumitaka Ishikawa
发明人： Hiroshi Inagaki , Fumitaka Ishikawa
IPC分类号： C30B15/30 , C30B29/06 , H01L21/208 , C30B35/00
CPC分类号： C30B15/30 , Y10S117/911 , Y10T117/1032 , Y10T117/1072
摘要： This invention provides a apparatus and a method of pulling up single crystals, which respond to the weight increase of semiconductor single crystal produced by the CZ method. The retaining wire wind-up mechanisms 11, 12; multiple pairs of guide pipes 4a, 4c capable of being moved upward or downward with respect to the seed holder 1; and a plurality of retaining wires 13, 15, each retaining wire passing through one pair of the guide pipes and having its central portion to be bent into a "U" shape are provided in the central portion of the lifting wire 5. The single crystal 17 can be retained by the retaining wire 13, 15, if the guide pipes 4a, 4c are driven to move downward and the "U" shaped portions of the retaining wires 13, 15 are driven to engage with the necked portion 17b so as to lift single crystal 17. The load is determined based on the detected value coming from the weight sensors installed on the means for winding up the retaining wires. Furthermore, when the single crystal 17 has to be re-melted, the retaining wires 13, 15 is loosened and disengaged with the necked portion 17b.
摘要翻译：本发明提供一种拉伸单晶的装置和方法，其响应于通过CZ方法产生的半导体单晶的重量增加。保持线卷绕机构11,12; 能够相对于种子保持器1向上或向下移动的多对导管4a，4c; 并且在提升线5的中央部设置有多条保持线13,15，每条保持线通过一对导管并且具有被弯曲成“U”形的中心部分的保持线。单晶如果引导管4a，4c被驱动向下移动并且保持线13,15的“U”形部分被驱动以与颈部17b接合，则保持线13,15可以被保持线13,15保持，以便提升单晶17.负载基于来自安装在用于卷绕保持线的装置上的重量传感器的检测值来确定。此外，当单晶17必须再熔化时，保持线13,15被松开并与颈部17b分离。

3. 发明授权

US6007625A Apparatus for manufacturing single crystal 失效
标题翻译：单晶制造装置
公开(公告)号：US6007625A
公开(公告)日：1999-12-28
申请号：US941309
申请日：1997-09-30
申请人： Junsuke Tomioka , Hiroshi Inagaki , Fumitaka Ishikawa
发明人： Junsuke Tomioka , Hiroshi Inagaki , Fumitaka Ishikawa
IPC分类号： C30B15/00 , C30B15/14 , C30B29/06 , C30B35/00
CPC分类号： C30B29/06 , C30B15/14 , Y10S117/917 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： This invention provides a method and a apparatus capable of manufacturing single crystals with an oxygen density of less than 12.times.10.sup.17 atoms/cm.sup.3 or less than 10.times.10.sup.17 atoms/cm.sup.3, and wherein the oxygen density of the single crystal produced is uniformly distributed along its longitudinal axis. The electrical power inputted into the main heater 6 surrounding the quartz crucible 4 and the top heater 9 shaped like a reverse frustrated cone and disposed above the quartz crucible 4, is controlled to keep the temperature of the melt 5 in a preset range during the process of pulling up the single crystal silicon 10. When combining the main heater 6 and the top heater 9, the heat emitted from the main heater 6 can be kept small, and the heat load on the quartz crucible 4 and the amount of oxygen released from the quartz crucible 4 and dissloved into melt 5 can be reduced. Therefore, a single crystal of low oxygen density and with uniformly distributed oxygen density along its longitudinal axis can be obtained. Furthermore, the single-crystal silicon 10 can be assigned a proper thermal history. In the above process, if a magnetic field is applied to the melt, then single crystals of much lower oxygen density can be obtained.
摘要翻译：本发明提供能够制造氧密度小于12×10 17原子/ cm 3或小于10×10 17原子/ cm 3的单晶的方法和装置，其中所制造的单晶的氧密度沿其纵向轴线均匀分布。控制输入到围绕石英坩埚4的主加热器6的电力以及设置在石英坩埚4上方的倒塌锥体形状的顶部加热器9，以在熔融过程中将熔体5的温度保持在预设范围内拉起单晶硅10.当组合主加热器6和顶部加热器9时，可以将从主加热器6发射的热量保持较小，并且石英坩埚4上的热负荷和从可以减少石英坩埚4并且被分解成熔体5。因此，可以获得具有低氧密度并沿着其纵轴具有均匀分布的氧密度的单晶。此外，单晶硅10可以被赋予适当的热历史。在上述过程中，如果对熔体施加磁场，则可以获得低得多的氧密度的单晶。

4. 发明授权

US08256590B2 Vibration suppressing device and vibration suppressing method for machine tool 有权
标题翻译：机床振动抑制装置及振动抑制方法
公开(公告)号：US08256590B2
公开(公告)日：2012-09-04
申请号：US12107191
申请日：2008-04-22
申请人： Norikazu Suzuki , Eiji Shamoto , Hiroshi Inagaki
发明人： Norikazu Suzuki , Eiji Shamoto , Hiroshi Inagaki
IPC分类号： F16F7/10
CPC分类号： G05B19/404 , B23Q17/0976 , G05B2219/37435 , Y10T83/086 , Y10T83/474 , Y10T83/773 , Y10T83/849 , Y10T408/172 , Y10T408/23 , Y10T408/76 , Y10T409/30084 , Y10T409/303752 , Y10T409/304312
摘要： A vibration suppressing device and a vibration suppressing method that are capable of obtaining an accurate optimum rotation speed and shortening a time period from generation of chatter vibration to calculation of the optimum rotation speed are provided. The vibration suppressing device includes: vibration sensors for detecting time-domain vibrational accelerations of a rotary shaft in rotation; and a control device for calculating a chatter frequency and a frequency-domain vibrational acceleration of the rotary shaft at the chatter frequency on the basis of the time-domain vibrational accelerations detected by the vibration sensors, and when the calculated frequency-domain vibrational acceleration exceeds a predetermined threshold value, calculating an optimum rotation speed on the basis of a predetermined parameter, and rotating the rotary shaft at the calculated optimum rotation speed.
摘要翻译：提供一种能够获得准确的最佳转速并缩短从产生振动振动到计算最佳转速的时间段的振动抑制装置和振动抑制方法。振动抑制装置包括：用于检测旋转轴的时域振动加速度的振动传感器; 以及控制装置，其基于由振动传感器检测到的时域振动加速度，计算出旋转轴的颤振频率和频域振动加速度，并且当所计算的频域振动加速度超过预定阈值，基于预定参数计算最佳转速，并以所计算的最佳转速旋转旋转轴。

5. 发明申请

US20110166816A1 SENSOR CONTROL APPARATUS 有权
标题翻译：传感器控制装置
公开(公告)号：US20110166816A1
公开(公告)日：2011-07-07
申请号：US12978066
申请日：2010-12-23
申请人： Yasuhiro ISHIGURO , Katsunori Yazawa , Hiroshi Inagaki , Keiji Suzuki , Tetsuma Shimozato
发明人： Yasuhiro ISHIGURO , Katsunori Yazawa , Hiroshi Inagaki , Keiji Suzuki , Tetsuma Shimozato
IPC分类号： G06F19/00
CPC分类号： F02D41/2454 , F02D41/123 , F02D41/1454 , F02D41/2441 , F02D41/2474
摘要： An oxygen sensor control apparatus (10) obtains a correction coefficient for calibrating the relation between oxygen concentration and an output value of an oxygen sensor (20), when a fuel cut operation of an internal combustion engine (100) is performed. The apparatus includes average output value calculation means; inter-fuel-cut average output value calculation means; and correction coefficient calculation means.
摘要翻译：当执行内燃机（100）的燃料切断操作时，氧传感器控制装置（10）获得用于校准氧浓度与氧传感器（20）的输出值之间的关系的校正系数。该装置包括平均输出值计算装置; 燃料间切割平均输出值计算装置; 和校正系数计算装置。

6. 发明授权

US07964073B2 Air fuel ratio detection apparatus 有权
标题翻译：空燃比检测装置
公开(公告)号：US07964073B2
公开(公告)日：2011-06-21
申请号：US11604218
申请日：2006-11-27
申请人： Masamichi Hiraiwa , Takeshi Kawai , Satoshi Teramoto , Shigeki Mori , Hiroshi Inagaki
发明人： Masamichi Hiraiwa , Takeshi Kawai , Satoshi Teramoto , Shigeki Mori , Hiroshi Inagaki
IPC分类号： G01N27/419
CPC分类号： G01N27/419
摘要： Using a gas detection voltage Vs output from a terminal CU, a determination is made at to whether, after startup of an air-fuel ratio detection apparatus (1), a full-range air-fuel ratio sensor (10) has reached a semi-activated state in which a determination can be made as to whether the air-fuel ratio is on the rich or lean side based on a change in a gas detection signal Vic. After determining that the sensor has reached the semi-activated state, the signal Vic is compared with a threshold to determine whether the air-fuel ratio is on the rich or lean side. In the apparatus (1), the potential difference between an outer pump electrode of a pump cell (14) and a reference electrode of an oxygen concentration measurement cell (24) is obtained via a first differential amplification circuit (53) as the gas detection signal Vic, the signal Vic being highly responsive to a change in air-fuel ratio of exhaust gas.
摘要翻译：使用从端子CU输出的气体检测电压Vs，判定在空燃比检测装置（1）启动后，全范围空燃比传感器（10）到达半空基于气体检测信号Vic的变化，能够进行空燃比是富气还是偏侧的判定。在确定传感器已经达到半激活状态之后，将信号Vic与阈值进行比较，以确定空燃比是富有还是偏侧。在装置（1）中，通过作为气体检测器的第一差分放大电路（53）获得泵电池（14）的外泵电极与氧浓度测定电池（24）的参比电极之间的电位差信号Vic，信号Vic对废气的空燃比变化高度响应。

7. 发明授权

US07573275B2 Temperature sensor control apparatus 有权
标题翻译：温度传感器控制装置
公开(公告)号：US07573275B2
公开(公告)日：2009-08-11
申请号：US11509566
申请日：2006-08-25
申请人： Hiroshi Inagaki , Yuji Oi
发明人： Hiroshi Inagaki , Yuji Oi
IPC分类号： G01R27/08
CPC分类号： G01K7/24 , G01K2205/04
摘要： A temperature sensor control apparatus includes a reference potential section, a driving potential section set to a driving electric potential, a temperature sensor configured to vary a resistance in accordance with a temperature, and disposed between the reference potential section and the driving potential section, a conduction path, two reference resistance elements each connected in series with the temperature sensor, a potential controlled point disposed in the conduction path between the reference resistance elements, a potential setting section configured to set an electric potential of the potential controlled point to the driving electric potential; and a resistance switching control section configured to control the potential setting section to switch the electric potential of the potential controlled point, and to switch each of the reference resistance elements to one of an energized state and a deenergized state.
摘要翻译：温度传感器控制装置包括参考电位部分，设置为驱动电位的驱动电位部分，配置为根据温度改变电阻并设置在参考电位部分和驱动电位部分之间的温度传感器，导通路径，与温度传感器串联连接的两个参考电阻元件，设置在参考电阻元件之间的导通路径中的电位受控点，被配置为将电势受控点的电势设定为驱动电潜在; 以及电阻切换控制部，被配置为控制所述电位设定部切换所述电位受控点的电位，并将所述基准电阻元件切换为通电状态和断电状态。

8. 发明申请

US20090084172A1 Diagnostic method and apparatus for gas sensor 有权
公开(公告)号：US20090084172A1
公开(公告)日：2009-04-02
申请号：US12283440
申请日：2008-09-12
申请人： Reina Fukagai , Norikazu Ieda , Masahiro Tanaka , Hiroshi Inagaki , Masaki Hirata , Takahiro Suzuki
发明人： Reina Fukagai , Norikazu Ieda , Masahiro Tanaka , Hiroshi Inagaki , Masaki Hirata , Takahiro Suzuki
IPC分类号： G01M15/04
CPC分类号： F02D41/1474 , F02D41/1456 , F02D41/1494 , F02D41/1495 , F02D2041/1432 , G01N27/4175
摘要： A gas sensor diagnostic method includes the steps of counting the reversal number of times that a target air-fuel ratio for an air-fuel mixture to be supplied to an internal combustion engine reverses from a rich side to a lean side or from the lean side to the rich side through a specific air-fuel ratio defined as a boundary of the rich and lean sides; obtaining a detection signal of gas sensor at constant time intervals during a diagnosis period between a timing when the count for the reversal number is started and a timing when the reversal number reaches a predetermined number; calculating a first moderated signal by applying a first moderation calculation to the detection signal, and a second moderated signal by applying a second moderation calculation to the detection signal; calculating a deviation between the first and second moderated signals; and determining whether the gas sensor is in the abnormal state on the basis of the deviation obtained during the diagnosis period.

9. 发明申请

US20080196702A1 DIAGNOSTIC METHOD AND CONTROL APPARATUS FOR GAS SENSOR 有权
标题翻译：气体传感器诊断方法及控制装置
公开(公告)号：US20080196702A1
公开(公告)日：2008-08-21
申请号：US12033525
申请日：2008-02-19
申请人： Reina Fukagai , Norikazu Ieda , Masahiro Tanaka , Hiroshi Inagaki , Kunihiko Takamatsu , Masaki Hirata , Takahiro Suzuki
发明人： Reina Fukagai , Norikazu Ieda , Masahiro Tanaka , Hiroshi Inagaki , Kunihiko Takamatsu , Masaki Hirata , Takahiro Suzuki
IPC分类号： F02D41/22 , F02D35/00 , F01N11/00
CPC分类号： F02D41/1456 , F02D41/123 , F02D41/126 , F02D41/1495 , F02D2250/14 , G01N27/4175
摘要： A gas sensor diagnostic method includes: a fuel supply detecting step of detecting an interruption of a fuel supply to the internal combustion engine, and a restart of the fuel supply after the interruption of the fuel supply; a response time period accumulating step of determining a response time period by accumulating a first time period that the sensor output value reaches from a first threshold value to a second threshold value after the detection of the interruption of the fuel supply, and a second time period that the sensor output value reaches from a third threshold value to a fourth threshold value after the detection of the restart of the fuel supply after the interruption of the fuel supply; and an abnormal state diagnosing section of determining an abnormal state of the gas sensor when the response time period is greater than a predetermined time period.
摘要翻译：一种气体传感器诊断方法，包括：燃料供给检测步骤，检测对内燃机的燃料供给的中断，以及在燃料供给中断之后重新启动燃料供给; 响应时间累积步骤，通过在检测到燃料供给中断之后，将传感器输出值从第一阈值到达第一阈值的第一时间段确定为响应时间段，以及第二时间段在燃料供应中断之后检测到燃料供应的重新启动之后，传感器输出值从第三阈值到达第四阈值; 以及异常状态诊断部，其在所述响应时间段大于预定时间段时确定所述气体传感器的异常状态。

10. 发明授权

US07235128B2 Process for producing single-crystal semiconductor and apparatus for producing single-crystal semiconductor 有权
标题翻译：单晶半导体的制造方法及单晶半导体的制造装置
公开(公告)号：US07235128B2
公开(公告)日：2007-06-26
申请号：US11005180
申请日：2004-12-06
申请人： Susumu Maeda , Hiroshi Inagaki , Shigeki Kawashima , Shoei Kurosaka , Kozo Nakamura
发明人： Susumu Maeda , Hiroshi Inagaki , Shigeki Kawashima , Shoei Kurosaka , Kozo Nakamura
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B15/20 , C30B15/22 , C30B15/36 , Y10S117/90 , Y10T117/1004
摘要： A process for producing a single-crystal semiconductor and an apparatus therefor. A single-crystal semiconductor of large diameter and large weight can be lifted with the use of existing equipment not having any substantial change thereto while not influencing the oxygen concentration of single-crystal semiconductor and the temperature of melt and while not unduly raising the temperature of seed crystal. In particular, the relationship (L1, L2, L3) between the allowable temperature difference (ΔT) and the diameter (D) of seed crystal (14) is preset so that the temperature difference between the seed crystal (14) at the time the seed crystal (14) is immersed in the melt and the melt (5) falls within the allowable temperature difference (ΔT) at which dislocations are not introduced into the seed crystal (14). In accordance with the relationship (L1, L2, L3), the allowable temperature difference (ΔT) corresponding to the diameter (D) of seed crystal (14) to be immersed in the melt is determined. Temperature control is conducted so that at the time the seed crystal (14) is immersed in the melt (5) the temperature difference between the seed crystal (14) and the melt (5) falls within the determined allowable temperature difference (ΔT).
摘要翻译：一种单晶半导体的制造方法及其装置。可以使用不具有任何显着变化的现有设备来提升大直径和大重量的单晶半导体，同时不影响单晶半导体的氧浓度和熔体的温度，同时不会过度地提高温度晶种。特别地，预设晶种（14）的允许温差（DeltaT）和直径（D）之间的关系（L 1，L 2，L 3），使得晶种（14）在籽晶（14）浸入熔体中的时间和熔体（5）落入未被引入到晶种（14）中的位错的允许温度差（DeltaT）之内。根据关系（L 1，L 2，L 3），确定与浸入熔体中的晶种（14）的直径（D）相对应的容许温度差（DeltaT）。进行温度控制，使晶种（14）浸入熔融物（5）中时晶种（14）和熔体（5）之间的温度差落在确定的允许温差（DeltaT）之内。

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