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    • 4. 发明授权
    • Air fuel ratio detection apparatus
    • 空燃比检测装置
    • US07964073B2
    • 2011-06-21
    • US11604218
    • 2006-11-27
    • Masamichi HiraiwaTakeshi KawaiSatoshi TeramotoShigeki MoriHiroshi Inagaki
    • Masamichi HiraiwaTakeshi KawaiSatoshi TeramotoShigeki MoriHiroshi Inagaki
    • G01N27/419
    • G01N27/419
    • Using a gas detection voltage Vs output from a terminal CU, a determination is made at to whether, after startup of an air-fuel ratio detection apparatus (1), a full-range air-fuel ratio sensor (10) has reached a semi-activated state in which a determination can be made as to whether the air-fuel ratio is on the rich or lean side based on a change in a gas detection signal Vic. After determining that the sensor has reached the semi-activated state, the signal Vic is compared with a threshold to determine whether the air-fuel ratio is on the rich or lean side. In the apparatus (1), the potential difference between an outer pump electrode of a pump cell (14) and a reference electrode of an oxygen concentration measurement cell (24) is obtained via a first differential amplification circuit (53) as the gas detection signal Vic, the signal Vic being highly responsive to a change in air-fuel ratio of exhaust gas.
    • 使用从端子CU输出的气体检测电压Vs,判定在空燃比检测装置(1)启动后,全范围空燃比传感器(10)到达半空 基于气体检测信号Vic的变化,能够进行空燃比是富气还是偏侧的判定。 在确定传感器已经达到半激活状态之后,将信号Vic与阈值进行比较,以确定空燃比是富有还是偏侧。 在装置(1)中,通过作为气体检测器的第一差分放大电路(53)获得泵电池(14)的外泵电极与氧浓度测定电池(24)的参比电极之间的电位差 信号Vic,信号Vic对废气的空燃比变化高度响应。
    • 5. 发明授权
    • Temperature sensor control apparatus
    • 温度传感器控制装置
    • US07573275B2
    • 2009-08-11
    • US11509566
    • 2006-08-25
    • Hiroshi InagakiYuji Oi
    • Hiroshi InagakiYuji Oi
    • G01R27/08
    • G01K7/24G01K2205/04
    • A temperature sensor control apparatus includes a reference potential section, a driving potential section set to a driving electric potential, a temperature sensor configured to vary a resistance in accordance with a temperature, and disposed between the reference potential section and the driving potential section, a conduction path, two reference resistance elements each connected in series with the temperature sensor, a potential controlled point disposed in the conduction path between the reference resistance elements, a potential setting section configured to set an electric potential of the potential controlled point to the driving electric potential; and a resistance switching control section configured to control the potential setting section to switch the electric potential of the potential controlled point, and to switch each of the reference resistance elements to one of an energized state and a deenergized state.
    • 温度传感器控制装置包括参考电位部分,设置为驱动电位的驱动电位部分,配置为根据温度改变电阻并设置在参考电位部分和驱动电位部分之间的温度传感器, 导通路径,与温度传感器串联连接的两个参考电阻元件,设置在参考电阻元件之间的导通路径中的电位受控点,被配置为将电势受控点的电势设定为驱动电 潜在; 以及电阻切换控制部,被配置为控制所述电位设定部切换所述电位受控点的电位,并将所述基准电阻元件切换为通电状态和断电状态。
    • 8. 发明授权
    • Process for producing single-crystal semiconductor and apparatus for producing single-crystal semiconductor
    • 单晶半导体的制造方法及单晶半导体的制造装置
    • US07235128B2
    • 2007-06-26
    • US11005180
    • 2004-12-06
    • Susumu MaedaHiroshi InagakiShigeki KawashimaShoei KurosakaKozo Nakamura
    • Susumu MaedaHiroshi InagakiShigeki KawashimaShoei KurosakaKozo Nakamura
    • C30B15/20
    • C30B29/06C30B15/20C30B15/22C30B15/36Y10S117/90Y10T117/1004
    • A process for producing a single-crystal semiconductor and an apparatus therefor. A single-crystal semiconductor of large diameter and large weight can be lifted with the use of existing equipment not having any substantial change thereto while not influencing the oxygen concentration of single-crystal semiconductor and the temperature of melt and while not unduly raising the temperature of seed crystal. In particular, the relationship (L1, L2, L3) between the allowable temperature difference (ΔT) and the diameter (D) of seed crystal (14) is preset so that the temperature difference between the seed crystal (14) at the time the seed crystal (14) is immersed in the melt and the melt (5) falls within the allowable temperature difference (ΔT) at which dislocations are not introduced into the seed crystal (14). In accordance with the relationship (L1, L2, L3), the allowable temperature difference (ΔT) corresponding to the diameter (D) of seed crystal (14) to be immersed in the melt is determined. Temperature control is conducted so that at the time the seed crystal (14) is immersed in the melt (5) the temperature difference between the seed crystal (14) and the melt (5) falls within the determined allowable temperature difference (ΔT).
    • 一种单晶半导体的制造方法及其装置。 可以使用不具有任何显着变化的现有设备来提升大直径和大重量的单晶半导体,同时不影响单晶半导体的氧浓度和熔体的温度,同时不会过度地提高温度 晶种。 特别地,预设晶种(14)的允许温差(DeltaT)和直径(D)之间的关系(L 1,L 2,L 3),使得晶种(14)在 籽晶(14)浸入熔体中的时间和熔体(5)落入未被引入到晶种(14)中的位错的允许温度差(DeltaT)之内。 根据关系(L 1,L 2,L 3),确定与浸入熔体中的晶种(14)的直径(D)相对应的容许温度差(DeltaT)。 进行温度控制,使晶种(14)浸入熔融物(5)中时晶种(14)和熔体(5)之间的温度差落在确定的允许温差(DeltaT)之内。