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1. 发明授权

US07235128B2 Process for producing single-crystal semiconductor and apparatus for producing single-crystal semiconductor 有权
标题翻译：单晶半导体的制造方法及单晶半导体的制造装置
公开(公告)号：US07235128B2
公开(公告)日：2007-06-26
申请号：US11005180
申请日：2004-12-06
申请人： Susumu Maeda , Hiroshi Inagaki , Shigeki Kawashima , Shoei Kurosaka , Kozo Nakamura
发明人： Susumu Maeda , Hiroshi Inagaki , Shigeki Kawashima , Shoei Kurosaka , Kozo Nakamura
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B15/20 , C30B15/22 , C30B15/36 , Y10S117/90 , Y10T117/1004
摘要： A process for producing a single-crystal semiconductor and an apparatus therefor. A single-crystal semiconductor of large diameter and large weight can be lifted with the use of existing equipment not having any substantial change thereto while not influencing the oxygen concentration of single-crystal semiconductor and the temperature of melt and while not unduly raising the temperature of seed crystal. In particular, the relationship (L1, L2, L3) between the allowable temperature difference (ΔT) and the diameter (D) of seed crystal (14) is preset so that the temperature difference between the seed crystal (14) at the time the seed crystal (14) is immersed in the melt and the melt (5) falls within the allowable temperature difference (ΔT) at which dislocations are not introduced into the seed crystal (14). In accordance with the relationship (L1, L2, L3), the allowable temperature difference (ΔT) corresponding to the diameter (D) of seed crystal (14) to be immersed in the melt is determined. Temperature control is conducted so that at the time the seed crystal (14) is immersed in the melt (5) the temperature difference between the seed crystal (14) and the melt (5) falls within the determined allowable temperature difference (ΔT).
摘要翻译：一种单晶半导体的制造方法及其装置。可以使用不具有任何显着变化的现有设备来提升大直径和大重量的单晶半导体，同时不影响单晶半导体的氧浓度和熔体的温度，同时不会过度地提高温度晶种。特别地，预设晶种（14）的允许温差（DeltaT）和直径（D）之间的关系（L 1，L 2，L 3），使得晶种（14）在籽晶（14）浸入熔体中的时间和熔体（5）落入未被引入到晶种（14）中的位错的允许温度差（DeltaT）之内。根据关系（L 1，L 2，L 3），确定与浸入熔体中的晶种（14）的直径（D）相对应的容许温度差（DeltaT）。进行温度控制，使晶种（14）浸入熔融物（5）中时晶种（14）和熔体（5）之间的温度差落在确定的允许温差（DeltaT）之内。

2. 发明授权

US07329317B2 Method for producing silicon wafer 有权
标题翻译：硅晶片的制造方法
公开(公告)号：US07329317B2
公开(公告)日：2008-02-12
申请号：US10533147
申请日：2003-10-31
申请人： Susumu Maeda , Hiroshi Inagaki , Shigeki Kawashima , Shoei Kurosaka , Kozo Nakamura
发明人： Susumu Maeda , Hiroshi Inagaki , Shigeki Kawashima , Shoei Kurosaka , Kozo Nakamura
IPC分类号： C30B15/00 , C30B21/06 , C30B23/00 , C30B30/04 , C30B27/02
CPC分类号： C30B29/06 , C30B15/203
摘要： The present invention is to produce a silicon crystal wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so that the boron concentration in the silicon crystal is no less than 1×1018 atoms/cm3 and the growth condition V/G falls within the epitaxial defect-free region α2 whose lower limit line LN1 is the line indicating that the growth rate V gradually drops as the boron concentration increases. A silicon wafer is also produced wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so as to include at least the epitaxial defect region β1, and both the heat treatment condition and the oxygen concentration of the silicon crystal are controlled so that no OSF nuclei grow to OSFs.
摘要翻译：本发明是为了制造硅晶体，其中硅晶体中的硼浓度和生长条件V / G被控制，使得硅晶体中的硼浓度不低于1×10 18原子/ cm 3，并且生长条件V / G落在外延缺陷区域α2N中，其下限线LN 1是表示生长速率V逐渐下降的线随着硼浓度的增加。还生产硅晶片，其中硅晶体中的硼浓度和生长条件V / G被控制为至少包括外延缺陷区β1，并且热处理条件和控制硅晶体的氧浓度使得OSF核不生长到OSF。

3. 发明申请

US20060005762A1 Method for producing silicon wafer 有权
标题翻译：硅晶片的制造方法
公开(公告)号：US20060005762A1
公开(公告)日：2006-01-12
申请号：US10533147
申请日：2003-10-31
申请人： Susumu Maeda , Hiroshi Inagaki , Shigeki Kawashima , Shoei Kurosaka , Kozo Nakamura
发明人： Susumu Maeda , Hiroshi Inagaki , Shigeki Kawashima , Shoei Kurosaka , Kozo Nakamura
IPC分类号： C30B15/00 , C30B21/06 , C30B23/00 , C30B30/04 , C30B27/02
CPC分类号： C30B29/06 , C30B15/203
摘要： The present invention is to produce a silicon crystal wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so that the boron concentration in the silicon crystal is no less than 1×1018 atoms/cm3 and the growth condition V/G falls within the epitaxial defect-free region α2 whose lower limit line LN1 is the line indicating that the growth rate V gradually drops as the boron concentration increases. Further, the present invention is to produce a silicon wafer wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so as to include at least the epitaxial defect region β1, and the heat treatment condition of the silicon crystal and the oxygen concentration in the silicon crystal are controlled so that no OSF nuclei grow to OSFs. Moreover, the present invention is to produce a silicon crystal wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so that they fall in the vicinity of the lower limit line LN3 within the epitaxial defect-free region α1.
摘要翻译：本发明是为了制造硅晶体，其中硅晶体中的硼浓度和生长条件V / G被控制，使得硅晶体中的硼浓度不低于1×10 18原子/ cm 3，并且生长条件V / G落在外延无缺陷区域α2N中，其下限线LN1是表示生长速率V逐渐下降的线硼浓度增加。此外，本发明是为了制造硅晶片，其中硅晶体中的硼浓度和生长条件V / G被控制为至少包括外延缺陷区β1，并且控制硅晶体的热处理条件和硅晶体中的氧浓度，使得OSF核不生长到OSF。此外，本发明是为了制造硅晶体，其中硅晶体中的硼浓度和生长条件V / G被控制为使得它们落入外延缺陷区域内的下限线LN3附近， SUB> 1 。

4. 发明申请

US20050139149A1 Process for producing single-crystal semiconductor and apparatus for producing single-crystal semiconductor 有权
标题翻译：单晶半导体的制造方法及单晶半导体的制造装置
公开(公告)号：US20050139149A1
公开(公告)日：2005-06-30
申请号：US11005180
申请日：2004-12-06
申请人： Susumu Maeda , Hiroshi Inagaki , Shigeki Kawashima , Shoei Kurosaka , Kozo Nakamura
发明人： Susumu Maeda , Hiroshi Inagaki , Shigeki Kawashima , Shoei Kurosaka , Kozo Nakamura
IPC分类号： C30B15/00 , C30B15/20 , C30B15/22 , C30B15/36 , C30B29/06 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B29/06 , C30B15/20 , C30B15/22 , C30B15/36 , Y10S117/90 , Y10T117/1004
摘要： A process for producing a single-crystal semiconductor and an apparatus therefor. A single-crystal semiconductor of large diameter and large weight can be lifted with the use of existing equipment not having any substantial change thereto while not influencing the oxygen concentration of single-crystal semiconductor and the temperature of melt and while not unduly raising the temperature of seed crystal. In particular, the relationship (L1, L2, L3) between the allowable temperature difference (ΔT) and the diameter (D) of seed crystal (14) is preset so that the temperature difference between the seed crystal (14) at the time the seed crystal (14) is immersed in the melt and the melt (5) falls within the allowable temperature difference (ΔT) at which dislocations are not introduced into the seed crystal (14). In accordance with the relationship (L1, L2, L3), the allowable temperature difference (ΔT) corresponding to the diameter (D) of seed crystal (14) to be immersed in the melt is determined. Temperature control is conducted so that at the time the seed crystal (14) is immersed in the melt (5) the temperature difference between the seed crystal (14) and the melt (5) falls within the determined allowable temperature difference (ΔT).
摘要翻译：一种单晶半导体的制造方法及其装置。可以使用不具有任何显着变化的现有设备来提升大直径和大重量的单晶半导体，同时不影响单晶半导体的氧浓度和熔体的温度，同时不会过度地提高温度晶种。特别地，预设晶种（14）的允许温差（DeltaT）和直径（D）之间的关系（L 1，L 2，L 3），使得晶种（14）在籽晶（14）浸入熔体中的时间和熔体（5）落入未被引入到晶种（14）中的位错的允许温度差（DeltaT）之内。根据关系（L 1，L 2，L 3），确定与浸入熔体中的晶种（14）的直径（D）相对应的允许温度差（DeltaT）。进行温度控制，使晶种（14）浸入熔融物（5）中时晶种（14）和熔体（5）之间的温度差落在确定的允许温差（DeltaT）之内。

5. 发明授权

US06869478B2 Method for producing silicon single crystal having no flaw 有权
标题翻译：无裂纹的硅单晶的制造方法
公开(公告)号：US06869478B2
公开(公告)日：2005-03-22
申请号：US10239593
申请日：2001-03-19
申请人： Kozo Nakamura , Toshiaki Saishoji , Shinji Togawa , Toshirou Kotooka , Susumu Maeda
发明人： Kozo Nakamura , Toshiaki Saishoji , Shinji Togawa , Toshirou Kotooka , Susumu Maeda
IPC分类号： C30B29/06 , C30B15/00 , C30B15/14 , C30B15/22 , H01L21/208 , C30B15/20
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , Y10T117/1004 , Y10T117/1008 , Y10T117/1068
摘要： A method for producing a silicon ingot having no defect over a wide range of region with stability and good reproducibility, wherein when a silicon single crystal (11) is pulled up form a silicon melt (13), the shape of a solid-liquid interface (14) which a boundary between the silicon melt (13) and the silicon single crystal (11) and the temperature distribution on the side face (11b) of a single crystal under being pulled up are appropriately controlled.
摘要翻译：一种在宽范围的区域内产生无缺陷的硅锭的稳定性和再现性的方法，其中当硅单晶（11）由硅熔体（13）拉出时，固液界面的形状（14），其中硅熔体（13）和硅单晶（11）之间的边界以及在被拉起的单晶的侧面（11b）上的温度分布被适当地控制。

6. 发明授权

US09176264B2 Light-diffusing element, polarizing plate having light-diffusing element attached thereto, polarizing element, and liquid crystal display device equipped with those components 有权
标题翻译：光散射元件，安装有光漫射元件的偏振片，偏振元件和配备有这些元件的液晶显示器件
公开(公告)号：US09176264B2
公开(公告)日：2015-11-03
申请号：US13822564
申请日：2011-09-16
申请人： Akinori Nishimura , Kozo Nakamura , Hiroyuki Takemoto , Takehito Fuchida , Kazuto Yamagata , Shunsuke Shutou , Tomohito Takita
发明人： Akinori Nishimura , Kozo Nakamura , Hiroyuki Takemoto , Takehito Fuchida , Kazuto Yamagata , Shunsuke Shutou , Tomohito Takita
IPC分类号： G02F1/1335 , G02B5/02 , G02B13/20 , G09F13/04 , G02F1/1333
CPC分类号： G02B5/0294 , G02B5/0242 , G02B5/0278 , G02F1/13338 , G02F1/133504 , G09F13/0409
摘要： There is provided a light diffusing element made of a thin film capable of realizing low back scattering and a high haze. A light diffusing element according to an embodiment of the invention includes: a first region having a first refractive index n1; a refractive index modulation region having a substantially spherical shell shape and surrounding the first region; and a second region having a second refractive index n2, the second region being positioned on a side of the refractive index modulation region opposite to the first region. The light diffusing element satisfies the following expressions (1) and (2): 0.0006≦Δn/L (1) 10≦(Δn)2×A×B≦100 (2).
摘要翻译：提供了由能够实现低背散射和高雾度的薄膜制成的光漫射元件。根据本发明实施例的光漫射元件包括：具有第一折射率n1的第一区域; 折射率调制区域，其具有大致球形的外壳形状并围绕所述第一区域; 和具有第二折射率n2的第二区域，所述第二区域位于与所述第一区域相反的折射率调制区域的一侧。光漫射元件满足以下表达式（1）和（2）：0.0006＆nlE;＆Dgr; n / L（1）10＆nlE;（＆Dgr; n）2×A×B＆nlE; 100（2）。

7. 发明授权

US09122273B2 Failure cause diagnosis system and method 有权
标题翻译：故障原因诊断系统及方法
公开(公告)号：US09122273B2
公开(公告)日：2015-09-01
申请号：US13578034
申请日：2010-02-26
申请人： Hiroki Uchiyama , Shinya Yuda , Hideaki Suzuki , Kozo Nakamura
发明人： Hiroki Uchiyama , Shinya Yuda , Hideaki Suzuki , Kozo Nakamura
IPC分类号： G06F15/00 , G05B23/02
CPC分类号： G05B23/0221 , G05B23/0278 , G05B2219/24019 , G05B2219/24042
摘要： The invention is related to a system and a method to determine whether a target equipment deviates from a normal state. If it is determined that the target equipment to be diagnosed deviates from the normal state, the degree of deviation of each parameter from the normal state as the reference is calculated as an abnormal contribution ratio. A failure cause is estimated from a similarity ratio between the calculated abnormal contribution ratio and the abnormal contribution ratio of each of the failure causes collected in the past and including failure phenomena and failure parts.
摘要翻译：本发明涉及一种确定目标设备是否偏离正常状态的系统和方法。如果确定要诊断的目标设备偏离正常状态，则将每个参数与作为基准的正常状态的偏差程度计算为异常贡献率。根据计算出的异常贡献率与过去收集的每个故障原因的异常贡献率，包括故障现象和故障部分之间的相似度估计故障原因。

8. 发明授权

US08838324B2 Monitoring and diagnosing device for working machine 有权
标题翻译：工作机监控诊断装置
公开(公告)号：US08838324B2
公开(公告)日：2014-09-16
申请号：US13575668
申请日：2010-01-28
申请人： Hideaki Suzuki , Yoshinori Furuno , Kozo Nakamura , Shinya Yuda , Hiroki Uchiyama
发明人： Hideaki Suzuki , Yoshinori Furuno , Kozo Nakamura , Shinya Yuda , Hiroki Uchiyama
IPC分类号： G06F11/30 , G06F11/00 , G06F7/70 , G06F19/00 , E02F9/26 , B66C13/16 , E02F9/20 , G05B23/02 , G06Q10/06
CPC分类号： E02F9/2025 , B66C13/16 , E02F9/264 , E02F9/267 , G05B23/0278 , G06Q10/06
摘要： Monitoring and diagnosing device including: a classification information storage section; frequency information storage section: a first data classifier section reading out reference classification information from the classification information storage section, comparing operational data, detected by a plurality of sensors and inputted in time sequence, with the reference classification information to classify the operational data, and then generating operational data classification information; a frequency comparator section compiling the operational data classification information, generating operational data frequency information by adding, to the operational data classification information, appearance frequency information for each classification of operational data, reading out reference frequency information from the frequency information storage section, and then generating operational data frequency comparison information by comparing operational data frequency information with the reference frequency information; and an abnormality diagnosing section performing an abnormality diagnosis upon the working machine by use of the operational data classification information and operational data frequency comparison information.
摘要翻译：监测和诊断装置包括：分类信息存储部分; 频率信息存储部分：从分类信息存储部分读取参考分类信息的第一数据分类器部分，将由多个传感器检测并且按时间顺序输入的操作数据与参考分类信息进行比较以对操作数据进行分类;以及然后生成操作数据分类信息; 频率比较器部分，编译操作数据分类信息，通过向操作数据分类信息添加用于操作数据的每个分类的出现频率信息，从频率信息存储部分读出参考频率信息，生成操作数据频率信息，然后通过将操作数据频率信息与参考频率信息进行比较来产生操作数据频率比较信息; 以及异常诊断部，其通过使用所述操作数据分类信息和操作数据频率比较信息对所述作业机进行异常诊断。

9. 发明授权

US08780029B2 Signal conversion circuit, and multiple-primary-color liquid crystal display device provided with same 有权
标题翻译：信号转换电路，以及多原色液晶显示装置
公开(公告)号：US08780029B2
公开(公告)日：2014-07-15
申请号：US13119978
申请日：2009-09-18
申请人： Kozo Nakamura , Shun Ueki , Kazunari Tomizawa , Tomohiko Mori , Yuichi Yoshida
发明人： Kozo Nakamura , Shun Ueki , Kazunari Tomizawa , Tomohiko Mori , Yuichi Yoshida
IPC分类号： G09G3/36 , G06F3/038 , G09G5/00 , G09G5/10 , G09G5/02
CPC分类号： G09G3/3655 , G02F2201/52 , G09G2300/0426 , G09G2300/0443 , G09G2300/0452 , G09G2320/0242 , G09G2320/028 , G09G2340/06
摘要： A multiprimary liquid crystal display device in which deteriorations in display quality caused by the coloration of a gray representation when viewed from an oblique direction are suppressed, and a signal conversion circuit for use in such a multiprimary liquid crystal display device are provided.A signal conversion circuit according to the present invention is for use in a multiprimary liquid crystal display device, the multiprimary liquid crystal display device having a pixel defined by a plurality of subpixels including a red subpixel, a green subpixel, a blue subpixel, and a yellow subpixel, and performing multicolor display by using four or more primary colors to be displayed by the plurality of subpixels, the signal conversion circuit converting an input video signal to a multiprimary signal corresponding to four or more primary colors. When a video signal for the pixel to display a gray color having a normalized luminance of no less than 0.2 and no more than 0.3 is input, the signal conversion circuit according to the present invention performs a conversion of the video signal so that, among the normalized luminances of the plurality of subpixels, the yellow subpixel has the lowest normalized luminance.
摘要翻译：抑制了从倾斜方向观察时由灰色表示着色引起的显示质量恶化的多原色液晶显示装置，并且提供了用于这种多原色液晶显示装置的信号转换电路。根据本发明的信号转换电路用于多原色液晶显示装置中，所述多原色液晶显示装置具有由包括红色子像素，绿色子像素，蓝色子像素和多个子像素的多个子像素所限定的像素黄色子像素，并且通过使用由多个子像素显示的四个或更多个原色进行多色显示，信号转换电路将输入视频信号转换为对应于四个或更多原色的多原色信号。当输入用于显示具有不小于0.2且不大于0.3的归一化亮度的灰度的像素的视频信号时，根据本发明的信号转换电路执行视频信号的转换，使得在多个子像素的归一化亮度，黄色子像素具有最低归一化亮度。

10. 发明申请

US20130300980A1 LIGHT-DIFFUSING ELEMENT, POLARIZER HAVING LIGHT-DIFFUSING ELEMENT, AND LIQUID CRYSTAL DISPLAY DEVICE HAVING SAME 有权
标题翻译：光扩散元件，具有光扩散元件的极化器和具有其的液晶显示器件
公开(公告)号：US20130300980A1
公开(公告)日：2013-11-14
申请号：US13822581
申请日：2011-09-16
申请人： Akinori Nishimura , Kozo Nakamura , Hiroyuki Takemoto , Takehito Fuchida
发明人： Akinori Nishimura , Kozo Nakamura , Hiroyuki Takemoto , Takehito Fuchida
IPC分类号： G02B5/02 , G02F1/1335 , G02B5/30
CPC分类号： G02B5/02 , G02B5/0242 , G02B5/0278 , G02B5/30 , G02F1/133504
摘要： There is provided a light diffusing element made of a thin film capable of realizing low backscattering and a high haze. A light diffusing element according to an embodiment of the present invention includes: a first region having a first refractive index; and a second region having a second refractive index. The first region and the second region form a fine uneven-shaped and spherical shell-shaped boundary.
摘要翻译：提供了能够实现低后向散射和高雾度的薄膜制成的光漫射元件。根据本发明实施例的光漫射元件包括：具有第一折射率的第一区域; 和具有第二折射率的第二区域。第一区域和第二区域形成细小的不规则形状和球形的壳形边界。

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