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1. 发明授权

US4988979A Fault inspection system for rotary machines 失效
标题翻译：旋转机故障检测系统
公开(公告)号：US4988979A
公开(公告)日：1991-01-29
申请号：US404736
申请日：1989-09-08
申请人： Hiroaki Sasaki , Yukio Fukuda , Toshio Shimizu
发明人： Hiroaki Sasaki , Yukio Fukuda , Toshio Shimizu
IPC分类号： G01H17/00 , G01H3/12 , G01M13/04 , G01M99/00 , G08B21/20
CPC分类号： G08B21/187 , G01H3/12
摘要： A fault inspection system for the rotary machine is disclosed in which the rotational speed or a physical quantity related thereto of the rotary machine drive with changing rotational speeds is detected as a first detection signal, and the sound pressure or mechanical vibration from the rotary machine as a second signal. A reference line representing the relationship between the values of the first and second detection signals is determined on the basis of the same values. A fault of the rotary machine is detected on the basis of a third detection signal associated with an area corresponding to the region where the first or second detection signal exceeds the reference line.
摘要翻译：公开了一种用于旋转机械的故障检查系统，其中检测到具有改变转速的旋转机械驱动器相关的转速或物理量作为第一检测信号，并且来自旋转机器的声压或机械振动作为第二个信号。基于相同的值来确定表示第一和第二检测信号的值之间的关系的参考线。基于与第一或第二检测信号超过参考线的区域对应的区域相关联的第三检测信号检测旋转机器的故障。

2. 发明授权

US06747203B2 Photovoltaic module 失效
标题翻译：光伏组件
公开(公告)号：US06747203B2
公开(公告)日：2004-06-08
申请号：US10191800
申请日：2002-07-10
申请人： Yukio Fukuda , Akimasa Umemoto , Noriaki Shibuya
发明人： Yukio Fukuda , Akimasa Umemoto , Noriaki Shibuya
IPC分类号： H01L31048
CPC分类号： H01L31/02013 , H01L31/048 , H01L31/049 , Y02E10/50
摘要： A photovoltaic module including: a light-transmissive substrate; a first sealing polymer layer stacked on the substrate; a photovoltaic cell stacked on the first sealing polymer layer; a second sealing polymer layer stacked on the photovoltaic cell and a weatherproof film stacked on the second sealing polymer layer, wherein the weatherproof film includes a moisture-proof layer provided on the second sealing polymer layer and a gas-proof layer provided on the moisture-proof layer, the gas-proof layer being made of polyphenylene sulfide.
摘要翻译：一种光伏模块，包括：透光基板; 堆叠在所述基板上的第一密封聚合物层; 堆叠在第一密封聚合物层上的光伏电池; 堆叠在所述光伏电池上的第二密封聚合物层和层叠在所述第二密封聚合物层上的防风薄膜，其中所述防水膜包括设置在所述第二密封聚合物层上的防潮层和设置在所述第二密封聚合物层上的防气层，防气层由聚苯硫醚制成。

3. 发明授权

US5840615A Method for forming a ferroelectric material film by the sol-gel method, along with a process for a production of a capacitor and its raw material solution 失效
标题翻译：通过溶胶 - 凝胶法形成铁电体膜的方法以及电容器及其原料溶液的制造方法
公开(公告)号：US5840615A
公开(公告)日：1998-11-24
申请号：US810201
申请日：1997-03-03
申请人： Katsuhiro Aoki , Yukio Fukuda , Akitoshi Nishimura , Tomomi Nagao , Shinichi Hachiya
发明人： Katsuhiro Aoki , Yukio Fukuda , Akitoshi Nishimura , Tomomi Nagao , Shinichi Hachiya
IPC分类号： C01B13/32 , C04B35/49 , C23C18/12 , H01B3/00 , H01G4/12 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/8242
CPC分类号： H01L21/31691 , C23C18/1216 , C23C18/1254 , C23C18/1279 , H01L21/02197 , H01L21/02282 , H01L28/55
摘要： A method for forming a ferroelectric material film, more particularly a lead zirconate titanate (PZT) film by the sol-gel method wherein a lowered oxidative sintering temperature may be adopted in preparing the ferroelectric material film with a perovskite crystalline structure, thereby reducing the risk of oxidation of metal electrodes and other circuits when the ferroelectric material film is employed as a dielectric in semiconductor devices, such as in a capacitor, for example. The method contemplates the preparation of a raw material solution containing an organometallic compound of a metallic element forming the ferroelectric material film, alkanolamine and/or stabilizer comprising a .beta.-diketone, with the concentration of the stabilizer being sufficient to provide a mole ratio to the total metal atoms of (stabilizer/total metal atoms)>3. The method then involves coating the raw material solution, drying the coated raw material solution to form a dried film, and sintering the dried film to form the ferroelectric material film wherein the oxidative sintering is carried out at a relatively low temperature of about 450.degree. C. in forming the ferroelectric material film with a perovskite crystalline structure.
摘要翻译：通过溶胶 - 凝胶法形成铁电材料膜的方法，特别是锆钛酸铅（PZT）薄膜，其中在制备具有钙钛矿晶体结构的铁电材料膜时可以采用降低的氧化烧结温度，从而降低风险当将铁电材料膜用作例如电容器等半导体器件中的电介质时，金属电极和其他电路的氧化。该方法考虑了制备含有形成铁电材料膜的金属元素的有机金属化合物的原料溶液，包含β-二酮的链烷醇胺和/或稳定剂，其稳定剂的浓度足以提供与（稳定剂/总金属原子）的总金属原子> 3。然后，该方法包括涂覆原料溶液，干燥涂覆的原料溶液以形成干燥膜，并烧结干燥的膜以形成铁电材料膜，其中氧化烧结在约450℃的较低温度下进行在形成具有钙钛矿晶体结构的铁电材料膜时。

4. 发明授权

US5654567A Capacitor, electrode or wiring structure, and semi conductor device 失效
标题翻译：电容器，电极或布线结构以及半导体器件
公开(公告)号：US5654567A
公开(公告)日：1997-08-05
申请号：US724159
申请日：1996-10-01
申请人： Ken Numata , Katsuhiro Aoki , Yukio Fukuda , Akitoshi Nishimura
发明人： Ken Numata , Katsuhiro Aoki , Yukio Fukuda , Akitoshi Nishimura
IPC分类号： H01L21/3205 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L23/52 , H01L27/04 , H01L27/10 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/78 , H01L23/48 , H01L27/02 , H01L29/68
CPC分类号： H01L27/11502
摘要： A capacitor, electrode, or wiring structure having an alpha ray emitting source (in particular, a Pt electrode), and an alpha ray shielding layer 18, having at least one type selected from the group of simple metals of nickel, cobalt, copper, and tungsten, their compounds or alloys made of at least two types of these simple metals, and compounds and alloys made of these simple metals and silicon is provided. It is possible to shield off the alpha ray effectively, to suppress generation of soft errors, to enable the use of Pt and other new materials in making the electrodes and wiring, and to reduce the cost of the mold resin.
摘要翻译：具有α射线发射源（特别是Pt电极）的电容器，电极或布线结构以及具有选自镍，钴，铜等的一类金属的至少一种的α射线屏蔽层18，提供了由这些简单金属中的至少两种类型制成的钨，它们的化合物或合金，以及由这些简单金属和硅制成的化合物和合金。可以有效地屏蔽α射线，以抑制软错误的产生，从而能够在制造电极和布线中使用Pt等新材料，并降低模制树脂的成本。

5. 发明授权

US6054387A Method for forming a silicide region 失效
标题翻译：硅化物区域的形成方法
公开(公告)号：US6054387A
公开(公告)日：2000-04-25
申请号：US927696
申请日：1997-09-11
申请人： Yukio Fukuda
发明人： Yukio Fukuda
IPC分类号： H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/336
CPC分类号： H01L29/665 , H01L21/28052 , H01L21/28518 , H01L21/32053
摘要： A method of forming a suicide layer 12 is disclosed herein. In one embodiment, a refractory metal (e.g., titanium) layer 20 is formed over a silicon (e.g., polysilicon) layer 10. The silicon layer 10 and the titanium layer 20 are then heated to a first temperature so that the silicon 10 and titanium 20 react to form a titanium silicide region 12. While applying an external force to warp the device, the titanium silicide region 12 is heated to a second temperature. This second temperature is higher than the first temperature. In one embodiment, this two-step heating process helps facilitate the transition from C49 phase TiSi.sub.2 to C54 phase TiSi.sub.2.
摘要翻译：本文公开了形成硅化物层12的方法。在一个实施例中，在硅（例如，多晶硅）层10上形成难熔金属（例如，钛）层20.然后将硅层10和钛层20加热至第一温度，使得硅10和钛 20反应以形成硅化钛区域12.当施加外力来扭曲器件时，硅化钛区域12被加热到第二温度。该第二温度高于第一温度。在一个实施方案中，该两步加热方法有助于促进从C49相TiSi 2向C 54相TiSi 2的转变。

6. 发明授权

US6033953A Method for manufacturing dielectric capacitor, dielectric memory device 失效
标题翻译：介质电容器的制造方法，介质存储器件
公开(公告)号：US6033953A
公开(公告)日：2000-03-07
申请号：US991132
申请日：1997-12-16
申请人： Katsuhiro Aoki , Yukio Fukuda , Ken Numata , Yasutoshi Okuno , Akitoshi Nishimura
发明人： Katsuhiro Aoki , Yukio Fukuda , Ken Numata , Yasutoshi Okuno , Akitoshi Nishimura
IPC分类号： H01G4/33 , H01L21/02 , H01L21/321 , H01L21/8242 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L27/108
CPC分类号： H01L27/1085 , H01L28/60 , H01L21/32115
摘要： A dielectric capacitor is provided which has a reduced leakage current. The surface of a first electrode (38) of the capacitor is electropolished and a dielectric film (40) and a second electrode (37) are successively laminated on it. The convex parts pointed end (38a) existing on the surface of the first electrode is very finely polished uniformly by dissolving according to electropolishing, a spherical curved surface in which the radius of curvature has been enlarged is formed, and the surface of the first electrode is flattened. Therefore, concentration of electrolysis can be prevented during the operation at the interface of the first electrode and the dielectric film, and the leakage current can be reduced considerably.
摘要翻译：提供了具有减小的漏电流的介质电容器。对电容器的第一电极（38）的表面进行电解抛光，并在其上依次层压电介质膜（40）和第二电极（37）。存在于第一电极表面上的凸部尖端（38a）通过电解抛光溶解而形成非常细微的抛光，形成曲面半径扩大的球面曲面，第一电极的表面扁平化因此，在第一电极和电介质膜的界面的操作期间可以防止电解浓度，并且可以显着降低泄漏电流。

7. 外观设计

USD360615S Small electric motor with mounting flange 失效
公开(公告)号：USD360615S
公开(公告)日：1995-07-25
申请号：US17073
申请日：1994-01-03
申请人： Hiroshi Sakashita , Yukio Fukuda , Jun Yamashita
设计人： Hiroshi Sakashita , Yukio Fukuda , Jun Yamashita

8. 外观设计

USD359476S Circuit board with mounting flange 失效
公开(公告)号：USD359476S
公开(公告)日：1995-06-20
申请号：US17072
申请日：1994-01-03
申请人： Hiroshi Sakashita , Yukio Fukuda , Jun Yamashita
设计人： Hiroshi Sakashita , Yukio Fukuda , Jun Yamashita

9. 发明申请

US20100074820A1 XENON RETRIEVAL SYSTEM AND RETRIEVAL DEVICE 有权
标题翻译： XENON检索系统和检索设备
公开(公告)号：US20100074820A1
公开(公告)日：2010-03-25
申请号：US12516723
申请日：2007-11-30
申请人： Masahiro Kimoto , Terumasa Koura , Yukio Fukuda , Masaki Narazaki , Taiji Hashimoto , Toru Sakai , Kazuo Yokogi
发明人： Masahiro Kimoto , Terumasa Koura , Yukio Fukuda , Masaki Narazaki , Taiji Hashimoto , Toru Sakai , Kazuo Yokogi
IPC分类号： C01B23/00 , B01D53/02
CPC分类号： B01D53/02 , B01D2253/108 , B01D2256/18 , B01D2257/11 , C01B23/0042 , C01B23/0052 , C01B23/0084 , C01B2210/0037 , C01B2210/0068 , F25J3/028 , F25J2205/20 , F25J2205/40 , F25J2205/60 , F25J2215/36
摘要： To provide a simple highly-pure Xe retrieval method and device with high retrieval efficiency by functionally removing such elements as water, CO2 and FCs from waste gases from semiconductor production processes, such as the plasma etching, that contain low-concentration Xe. For samples containing xenon and fluorocarbon, this invention is characterized by having at least first adsorption means (A1) filled with synthetic zeolite with pore size of 4A or smaller and aluminum oxide, arranged serially, gas separation means (A2) composed of silicone or polyethylene hollow fiber gas separation membrane modules 4, second adsorption means (A3) filled with either activated carbon, synthetic zeolite with pore size of 5A or larger, molecular sieving carbon with pore size of 5A or larger, or a combination of these, and reaction means (A4) filled with calcium compounds as reactant.
摘要翻译：通过从包含低浓度Xe的半导体生产工艺（例如等离子体蚀刻）的废气中功能去除水，CO2和FC等元素，提供具有高回收效率的简单的高纯度Xe回收方法和装置。对于含有氙气和碳氟化合物的样品，本发明的特征在于至少具有填充有4A或更小孔径的合成沸石的第一吸附装置（A1）和串联排列的氧化铝，由硅氧烷或聚乙烯组成的气体分离装置（A2）中空纤维气体分离膜组件4，填充有活性碳的第二吸附装置（A3），孔径为5A以上的合成沸石，孔径为5A以上的分子筛碳，或它们的组合，以及反应装置（A4）填充有钙化合物作为反应物。

10. 发明授权

US06847755B2 Optical cross connection switch using voltage-controlled interferometric optical switching elements 有权
标题翻译：光交叉开关采用压控干涉光开关元件
公开(公告)号：US06847755B2
公开(公告)日：2005-01-25
申请号：US10300114
申请日：2002-11-20
申请人： Katsuhiro Aoki , Munenori Oizumi , Susumu Kato , Yukio Fukuda
发明人： Katsuhiro Aoki , Munenori Oizumi , Susumu Kato , Yukio Fukuda
IPC分类号： G02B6/35 , G02F1/21 , H04Q11/00 , G02B6/26
CPC分类号： G02F1/21 , G02B6/3522 , G02B6/3546 , H04Q2011/0035
摘要： An optical switch comprising an array of voltage-controlled interferometric switching elements. Different configurations and modes of operation are possible, but in each configuration the elements are arranged relative to the input and output fibers, such that a beam of light is incident or outgoing at an angle of 45 degrees to the surface of a corresponding element. This permits each element to be electronically controlled to either transmit or reflect light, such that the output beam exits the switch either parallel to or perpendicular to the input beam.
摘要翻译：一种光开关，包括电压控制的干涉式开关元件阵列。不同的配置和操作模式是可能的，但是在每个配置中，元件相对于输入和输出光纤布置，使得光束以相对于元件的表面成45度的角度入射或出射。这允许每个元件被电子控制以发射或反射光，使得输出光束平行于或垂直于输入光束离开开关。

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