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    • 3. 发明授权
    • Developing device using electrostatic transport and hopping (ETH)
    • 使用静电转移和跳跃的显影装置(ETH)
    • US07672625B2
    • 2010-03-02
    • US11681940
    • 2007-03-05
    • Tomoko TakahashiKatsuhiro AokiHideki Zemba
    • Tomoko TakahashiKatsuhiro AokiHideki Zemba
    • G03G15/08G03G15/06G03G15/09
    • G03G15/065G03G15/0813
    • A developing device, process cartridge, and image forming apparatus that use ETH development, and are capable of forming good multi-color images with a simple construction, and are capable of preventing the dispersal of powder. The developing device is for developing latent images on a latent image carrying member by applying powder to the latent image carrying member, and comprises: a transport member disposed in opposition to the latent image carrying member and having a plurality of transport electrodes that generate a progressive wave electric field to move the powder; a voltage supply device for applying a multi-phase voltage to the transport electrodes; and a transport member surface potential determination device for determining the surface potential of the transport member. The voltage supply device in the developing device according to the present invention applies a multi-phase voltage to the transport electrodes so that the surface potential on the transport member is between the potential of the image portions and the potential of the non-image portions of the latent image carrying member.
    • 使用ETH显影的显影装置,处理盒和成像装置,能够以简单的结构形成良好的多色图像,并且能够防止粉末的分散。 显影装置用于通过将粉末施加到潜像承载构件上而在潜像承载构件上显影潜像,并且包括:与潜像承载构件相对设置的传送构件,并且具有多个传送电极, 波电场移动粉末; 用于向所述输送电极施加多相电压的电压供给装置; 以及传送构件表面电位确定装置,用于确定传送构件的表面电位。 根据本发明的显影装置中的电压供应装置向输送电极施加多相电压,使得输送部件上的表面电位在图像部分的电位和非图像部分的电位之间 潜像携带部件。
    • 8. 发明申请
    • Developing method, developing device, and image forming apparatus including the developing device that minimizes deterioration of developer
    • 显影方法,显影装置和图像形成装置,其包括使显影剂的劣化最小化的显影装置
    • US20050191095A1
    • 2005-09-01
    • US11049885
    • 2005-02-04
    • Katsuhiro AokiHajime OyamaHiromitsu TakagakiHiroshi Ikeguchi
    • Katsuhiro AokiHajime OyamaHiromitsu TakagakiHiroshi Ikeguchi
    • G03G9/08G03G9/087G03G15/08
    • G03G15/0844
    • A developing device includes a carrying roller configured to carry a developer. A storing section is configured to store the developer. A supplying roller is configured to supply the developer to the carrying roller by contacting the developer to the carrying roller, the supplying roller extending substantially parallel to the carrying roller. A conveying unit is configured to convey the developer stored in the storing section to the supplying roller. The conveying unit includes a pump with a stator having a through-hole, and a rotor disposed in the through-hole of the stator and spirally extended such that a cavity to convey the developer is formed between an outer peripheral surface of the rotor and an inner peripheral surface of the through-hole of the stator, the rotor being configured to convey the developer in the cavity in an axial direction of the rotor by eccentrically rotating. An air supplying unit is configured to supply air to the developer conveyed by the pump to scatter and fluidize the developer.
    • 显影装置包括构造成承载显影剂的承载辊。 存储部分被配置为存储显影剂。 供给辊构造成通过使显影剂与承载辊接触而将显影剂供应到承载辊,供给辊基本上平行于承载辊延伸。 输送单元构造成将存储在存储部中的显影剂输送到供给辊。 输送单元包括具有通孔的定子的泵和设置在定子的通孔中并且螺旋地延伸的转子,使得在转子的外周面和 定子的通孔的内周面,转子构造成通过偏心旋转在转子的轴向方向上输送空腔中的显影剂。 空气供给单元构造成将空气供给到由泵输送的显影剂以使显影剂分散和流化。
    • 10. 发明授权
    • Barrier layer for copper metallization in integrated circuit fabrication
    • 集成电路制造中铜金属化的阻挡层
    • US06747353B2
    • 2004-06-08
    • US09982655
    • 2001-10-18
    • Munenori OizumiKatsuhiro AokiYukio Fukuda
    • Munenori OizumiKatsuhiro AokiYukio Fukuda
    • H01L2348
    • H01L21/2855H01L21/76843H01L23/53238H01L28/55H01L28/75H01L2924/0002H01L2924/00
    • A barrier layer (20, 62) for an integrated circuit structure is disclosed. The barrier layer (20, 62) is a refractory metal silicon compound, such as a refractor metal silicon nitride compound, formed in an amorphous state. The barrier layer (20, 62) has a relatively low composition ratio of silicon, and of nitrogen if present, to provide low resistivity in combination with the high diffusion barrier properties provided by the amorphous state of the film. A disclosed example of the barrier layer (20, 62) is a compound of tantalum, silicon, and nitrogen, formed by controlled co-sputtering of tantalum and silicon in a gas atmosphere including nitrogen and argon. The barrier layer (20) may be used to underlie copper metallization (22), or the barrier layer (62) may be part or all of a lower plate in a ferroelectric memory capacitor (70).
    • 公开了一种用于集成电路结构的阻挡层(20,62)。 阻挡层(20,62)是形成为非晶状态的难熔金属硅化合物,例如折光金属氮化硅化合物。 阻挡层(20,62)具有相对较低的硅组成比和氮(如果存在),以提供低电阻率以及由膜的无定形状态提供的高扩散阻挡性能。 阻挡层(20,62)的公开实例是钽,硅和氮的化合物,其通过在包括氮和氩的气体气氛中的钽和硅的受控共溅射而形成。 阻挡层(20)可以用于铜金属化层(22),或阻挡层(62)可以是铁电存储电容器(70)中的下板的一部分或全部。