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    • 2. 发明申请
    • Solar cell module edge face sealing member and solar cell module employing same
    • 太阳能电池模块边缘密封件和采用其的太阳能电池模块
    • US20050115603A1
    • 2005-06-02
    • US10998087
    • 2004-11-29
    • Hiroyuki YoshidaYukio FukudaYuji SuzukiAkimasa Umemoto
    • Hiroyuki YoshidaYukio FukudaYuji SuzukiAkimasa Umemoto
    • H01L25/00H01L31/042H01L31/048
    • H01L31/048H02S30/10Y02E10/50
    • Edge face sealing member(s) may be roughly c-shaped in cross-section, may be frame-like in shape and formed in more or less parallel fashion with respect to outer shape(s) of solar cell module body or bodies, may comprise upper sealing region(s) abutting front surface(s) of solar cell module body or bodies, may further comprise lower sealing region(s) abutting back surface(s) of solar cell module body or bodies, and may further comprise side sealing region(s) abutting edge face(s) of solar cell module body or bodies. Furthermore, sealing region(s) may be roughly c-shaped in cross-section; may comprise upper sealing region(s) abutting front surface(s) of solar cell module body or bodies, lower sealing region(s) abutting back surface(s) of solar cell module body or bodies, and side sealing region(s) abutting edge face(s) of solar cell module body or bodies; may be of two-layer construction; and outer layer(s) may be hard, hardness(es) of inner layer(s) being less than that of outer layer(s); as a result of which there may be intimate contact even with nonflat and/or nonsmooth glass surface(s), permitting sealing.
    • 边缘密封构件的横截面可以是大致c形,可以是框架状的形状,并且相对于太阳能电池模块主体或主体的外部形状或多或少地平行地形成,可以 包括邻接太阳能电池模块主体或主体的前表面的上密封区域可以进一步包括邻接太阳能电池模块主体或主体的背面的下密封区域,并且还可以包括侧密封 太阳能电池组件主体或主体的邻接边缘区域。 此外,密封区域的横截面可以大致c形; 可以包括邻接太阳能电池模块主体或主体的前表面的上密封区域,与太阳能电池模块主体或主体的后表面相邻的下密封区域以及邻接的太阳能电池模块主体或主体的侧密封区域 太阳能电池组件主体或主体的边缘面; 可以是两层结构; 并且外层可以是硬的,内层的硬度小于外层的硬度; 其结果是即使具有非平坦和/或非光滑的玻璃表面也可能紧密接触,允许密封。
    • 5. 发明授权
    • Method for forming a silicide region
    • 硅化物区域的形成方法
    • US6054387A
    • 2000-04-25
    • US927696
    • 1997-09-11
    • Yukio Fukuda
    • Yukio Fukuda
    • H01L21/28H01L21/285H01L21/3205H01L21/336
    • H01L29/665H01L21/28052H01L21/28518H01L21/32053
    • A method of forming a suicide layer 12 is disclosed herein. In one embodiment, a refractory metal (e.g., titanium) layer 20 is formed over a silicon (e.g., polysilicon) layer 10. The silicon layer 10 and the titanium layer 20 are then heated to a first temperature so that the silicon 10 and titanium 20 react to form a titanium silicide region 12. While applying an external force to warp the device, the titanium silicide region 12 is heated to a second temperature. This second temperature is higher than the first temperature. In one embodiment, this two-step heating process helps facilitate the transition from C49 phase TiSi.sub.2 to C54 phase TiSi.sub.2.
    • 本文公开了形成硅化物层12的方法。 在一个实施例中,在硅(例如,多晶硅)层10上形成难熔金属(例如,钛)层20.然后将硅层10和钛层20加热至第一温度,使得硅10和钛 20反应以形成硅化钛区域12.当施加外力来扭曲器件时,硅化钛区域12被加热到第二温度。 该第二温度高于第一温度。 在一个实施方案中,该两步加热方法有助于促进从C49相TiSi 2向C 54相TiSi 2的转变。