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    • 7. 发明授权
    • Opto-semiconductor devices
    • 光电半导体器件
    • US07720127B2
    • 2010-05-18
    • US12232652
    • 2008-09-22
    • Yutaka InoueKazunori SaitohHiroshi HamadaMasato HagimotoSusumu Sorimachi
    • Yutaka InoueKazunori SaitohHiroshi HamadaMasato HagimotoSusumu Sorimachi
    • H01S3/097
    • H01S5/0224B82Y20/00H01S5/02212H01S5/02272H01S5/02476H01S5/0425H01S5/16H01S5/2081H01S5/22H01S5/34326H01S2301/14
    • An opto-semiconductor device. An opto-semiconductor element includes a semiconductor substrate, a multilayered semiconductor layer formed on a first surface of the semiconductor substrate and having a resonator, a first electrode with multiple conductive layers formed on the multilayered semiconductor layer, and a second electrode formed on a second surface of the semiconductor substrate. A support substrate has a first surface formed with a fixing portion having a conductive layer for fixing the first electrode connected thereto through a bonding material. Bonding material and conductive layers forming the first electrode react to form a reaction layer. The difference in thermal expansion coefficient between semiconductor substrate and support substrate is not more than ±50%. A second barrier metal layer not reactive with bonding material is formed inside the first electrode uppermost conductive layer, while uppermost layer reacts with the bonding material to form the reaction layer.
    • 光电半导体器件。 光半导体元件包括半导体衬底,形成在半导体衬底的第一表面上并具有谐振器的多层半导体层,形成在多层半导体层上的多个导电层的第一电极和形成在第二层上的第二电极 半导体衬底的表面。 支撑基板具有形成有固定部的第一表面,该固定部具有用于通过接合材料固定与其连接的第一电极的导电层。 形成第一电极的接合材料和导电层反应形成反应层。 半导体衬底和支撑衬底之间的热膨胀系数差不超过±50%。 在第一电极最上层的导电层的内部形成与接合材料不反应的第二阻挡金属层,而最上层与接合材料反应形成反应层。