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1. 发明申请

US20060222031A1 Opto-semiconductor devices 有权
标题翻译：光电半导体器件
公开(公告)号：US20060222031A1
公开(公告)日：2006-10-05
申请号：US11387986
申请日：2006-03-24
申请人： Yutaka Inoue , Kazunori Saitoh , Hiroshi Hamada , Masato Hagimoto , Susumu Sorimachi
发明人： Yutaka Inoue , Kazunori Saitoh , Hiroshi Hamada , Masato Hagimoto , Susumu Sorimachi
IPC分类号： H01S5/00 , H01S3/04
CPC分类号： H01S5/0224 , B82Y20/00 , H01S5/02212 , H01S5/02272 , H01S5/02476 , H01S5/0425 , H01S5/16 , H01S5/2081 , H01S5/22 , H01S5/34326 , H01S2301/14
摘要： An opto-semiconductor device. An opto-semiconductor element includes a semiconductor substrate, a multilayered semiconductor layer formed on a first surface of the semiconductor substrate and having a resonator, a first electrode with multiple conductive layers formed on the multilayered semiconductor layer, and a second electrode formed on a second surface of the semiconductor substrate. A support substrate has a first surface formed with a fixing portion having a conductive layer for fixing the first electrode connected thereto through a bonding material. Bonding material and conductive layers forming the first electrode react to form a reaction layer. The difference in thermal expansion coefficient between semiconductor substrate and support substrate is not more than ±50%. A second barrier metal layer not reactive with bonding material is formed inside the first electrode uppermost conductive layer, while uppermost layer reacts with the bonding material to form the reaction layer.
摘要翻译：光电半导体器件。光半导体元件包括半导体衬底，形成在半导体衬底的第一表面上并具有谐振器的多层半导体层，形成在多层半导体层上的多个导电层的第一电极和形成在第二层上的第二电极半导体衬底的表面。支撑基板具有形成有固定部的第一表面，该固定部具有用于通过接合材料固定与其连接的第一电极的导电层。形成第一电极的接合材料和导电层反应形成反应层。半导体衬底和支撑衬底之间的热膨胀系数差不超过±50％。在第一电极最上层的导电层的内部形成与接合材料不反应的第二阻挡金属层，而最上层与接合材料反应形成反应层。

2. 发明授权

US07720127B2 Opto-semiconductor devices 有权
标题翻译：光电半导体器件
公开(公告)号：US07720127B2
公开(公告)日：2010-05-18
申请号：US12232652
申请日：2008-09-22
申请人： Yutaka Inoue , Kazunori Saitoh , Hiroshi Hamada , Masato Hagimoto , Susumu Sorimachi
发明人： Yutaka Inoue , Kazunori Saitoh , Hiroshi Hamada , Masato Hagimoto , Susumu Sorimachi
IPC分类号： H01S3/097
CPC分类号： H01S5/0224 , B82Y20/00 , H01S5/02212 , H01S5/02272 , H01S5/02476 , H01S5/0425 , H01S5/16 , H01S5/2081 , H01S5/22 , H01S5/34326 , H01S2301/14
摘要： An opto-semiconductor device. An opto-semiconductor element includes a semiconductor substrate, a multilayered semiconductor layer formed on a first surface of the semiconductor substrate and having a resonator, a first electrode with multiple conductive layers formed on the multilayered semiconductor layer, and a second electrode formed on a second surface of the semiconductor substrate. A support substrate has a first surface formed with a fixing portion having a conductive layer for fixing the first electrode connected thereto through a bonding material. Bonding material and conductive layers forming the first electrode react to form a reaction layer. The difference in thermal expansion coefficient between semiconductor substrate and support substrate is not more than ±50%. A second barrier metal layer not reactive with bonding material is formed inside the first electrode uppermost conductive layer, while uppermost layer reacts with the bonding material to form the reaction layer.
摘要翻译：光电半导体器件。光半导体元件包括半导体衬底，形成在半导体衬底的第一表面上并具有谐振器的多层半导体层，形成在多层半导体层上的多个导电层的第一电极和形成在第二层上的第二电极半导体衬底的表面。支撑基板具有形成有固定部的第一表面，该固定部具有用于通过接合材料固定与其连接的第一电极的导电层。形成第一电极的接合材料和导电层反应形成反应层。半导体衬底和支撑衬底之间的热膨胀系数差不超过±50％。在第一电极最上层的导电层的内部形成与接合材料不反应的第二阻挡金属层，而最上层与接合材料反应形成反应层。

3. 发明授权

US07443901B2 Opto-semiconductor devices 有权
标题翻译：光电半导体器件
公开(公告)号：US07443901B2
公开(公告)日：2008-10-28
申请号：US11387986
申请日：2006-03-24
申请人： Yutaka Inoue , Kazunori Saitoh , Hiroshi Hamada , Masato Hagimoto , Susumu Sorimachi
发明人： Yutaka Inoue , Kazunori Saitoh , Hiroshi Hamada , Masato Hagimoto , Susumu Sorimachi
IPC分类号： H01S3/097
CPC分类号： H01S5/0224 , B82Y20/00 , H01S5/02212 , H01S5/02272 , H01S5/02476 , H01S5/0425 , H01S5/16 , H01S5/2081 , H01S5/22 , H01S5/34326 , H01S2301/14
摘要： An opto-semiconductor device. An opto-semiconductor element includes a semiconductor substrate, a multilayered semiconductor layer formed on a first surface of the semiconductor substrate and having a resonator, a first electrode with multiple conductive layers formed on the multilayered semiconductor layer, and a second electrode formed on a second surface of the semiconductor substrate. A support substrate has a first surface formed with a fixing portion having a conductive layer for fixing the first electrode connected thereto through a bonding material. Bonding material and conductive layers forming the first electrode react to form a reaction layer. The difference in thermal expansion coefficient between semiconductor substrate and support substrate is not more than ±50%. A second barrier metal layer not reactive with bonding material is formed inside the first electrode uppermost conductive layer, while uppermost layer reacts with the bonding material to form the reaction layer.
摘要翻译：光电半导体器件。光半导体元件包括半导体衬底，形成在半导体衬底的第一表面上并具有谐振器的多层半导体层，形成在多层半导体层上的多个导电层的第一电极和形成在第二层上的第二电极半导体衬底的表面。支撑基板具有形成有固定部的第一表面，该固定部具有用于通过接合材料固定与其连接的第一电极的导电层。形成第一电极的接合材料和导电层反应形成反应层。半导体衬底和支撑衬底之间的热膨胀系数差不超过±50％。在第一电极最上层的导电层的内部形成与接合材料不反应的第二阻挡金属层，而最上层与接合材料反应形成反应层。

4. 发明申请

US20090041076A1 Opto-semiconductor devices 有权
标题翻译：光电半导体器件
公开(公告)号：US20090041076A1
公开(公告)日：2009-02-12
申请号：US12232652
申请日：2008-09-22
申请人： Yutaka Inoue , Kazunori Saitoh , Hiroshi Hamada , Masato Hagimoto , Susumu Sorimachi
发明人： Yutaka Inoue , Kazunori Saitoh , Hiroshi Hamada , Masato Hagimoto , Susumu Sorimachi
IPC分类号： H01S5/00
CPC分类号： H01S5/0224 , B82Y20/00 , H01S5/02212 , H01S5/02272 , H01S5/02476 , H01S5/0425 , H01S5/16 , H01S5/2081 , H01S5/22 , H01S5/34326 , H01S2301/14
摘要： An opto-semiconductor device. An opto-semiconductor element includes a semiconductor substrate, a multilayered semiconductor layer formed on a first surface of the semiconductor substrate and having a resonator, a first electrode with multiple conductive layers formed on the multilayered semiconductor layer, and a second electrode formed on a second surface of the semiconductor substrate. A support substrate has a first surface formed with a fixing portion having a conductive layer for fixing the first electrode connected thereto through a bonding material. Bonding material and conductive layers forming the first electrode react to form a reaction layer. The difference in thermal expansion coefficient between semiconductor substrate and support substrate is not more than 50%. A second barrier metal layer not reactive with bonding material is formed inside the first electrode uppermost conductive layer, while uppermost layer reacts with the bonding material to form the reaction layer.
摘要翻译：光电半导体器件。光半导体元件包括半导体衬底，形成在半导体衬底的第一表面上并具有谐振器的多层半导体层，形成在多层半导体层上的多个导电层的第一电极和形成在第二层上的第二电极半导体衬底的表面。支撑基板具有形成有固定部的第一表面，该固定部具有用于通过接合材料固定与其连接的第一电极的导电层。形成第一电极的接合材料和导电层反应形成反应层。半导体衬底和支撑衬底之间的热膨胀系数差不超过50％。在第一电极最上层的导电层的内部形成与接合材料不反应的第二阻挡金属层，而最上层与接合材料反应形成反应层。

5. 发明授权

US07746910B2 Semiconductor laser diode and its fabrication process 有权
标题翻译：半导体激光二极管及其制造工艺
公开(公告)号：US07746910B2
公开(公告)日：2010-06-29
申请号：US12023168
申请日：2008-01-31
申请人： Satoshi Kawanaka , Atsushi Nakamura , Masato Hagimoto , Hideki Hara , Masakatsu Yamamoto
发明人： Satoshi Kawanaka , Atsushi Nakamura , Masato Hagimoto , Hideki Hara , Masakatsu Yamamoto
IPC分类号： H01S5/00
CPC分类号： H01S5/34326 , B82Y20/00 , H01S5/0202 , H01S5/028 , H01S5/0282 , H01S5/0287 , H01S5/1017 , H01S5/22 , H01S2301/18
摘要： A semiconductor laser diode device with small driving current and no distortion in the projected image. The semiconductor laser diode includes an n-GaAs substrate and, an n-cladding layer on the n-GaAs substrate, an active layer, a p-clad layer, a multilayer formed from sequentially laminated p-contact layers, and a ridge formed by selectively etching from the upper surface of the p-contact active layer to a specified depth on the p-contact layer, and an insulating film deposited on the upper surface side of the n-GaAs substrate, and formed from the side surface of the ridge to the edge periphery of the n-GaAs substrate, and a p-electrode formed on the insulating layer deposited on the ridge of the P-contact layer, and an n-type electrode formed on the lower surface of the n-GaAs substrate; and the n-GaAs substrate structure possesses a side edge serving as an absorption layer to absorb light emitted at the active layer wavelength; and a groove is fabricated at the side edge forming the front facet (forward emission side), to a depth from the p-cladding layer exceeding the active layer, from a p-cladding layer section a specified distance away from the side of the ridge along the edge, to the side of the active layer; and the groove is covered by the insulating layer.
摘要翻译：半导体激光二极管器件，驱动电流小，投影图像无变形。半导体激光二极管包括n-GaAs衬底和在n-GaAs衬底上的n包层，由有序层，p覆层，由顺序层压的p-接触层形成的多层，以及由从p接触有源层的上表面选择性地蚀刻到p接触层上的指定深度，以及沉积在n-GaAs衬底的上表面侧上的绝缘膜，并且从该脊的侧表面形成在p型接触层的隆起部上形成的绝缘层上形成的p电极和形成在n-GaAs衬底的下表面上的n型电极，并且n-GaAs衬底结构具有用作吸收层的侧边缘以吸收以有源层波长发射的光; 并且在距离脊侧的规定距离处的p型包覆层部分形成从形成前面（正向发射侧）的侧边缘到从p型包覆层超过有源层的深度的沟槽沿边缘，到活动层的一侧; 并且沟槽被绝缘层覆盖。

6. 发明申请

US20080181276A1 SEMICONDUCTOR LASER DIODE AND ITS FABRICATION PROCESS 有权
标题翻译：半导体激光二极管及其制造工艺
公开(公告)号：US20080181276A1
公开(公告)日：2008-07-31
申请号：US12023168
申请日：2008-01-31
申请人： Satoshi Kawanaka , Atsushi Nakamura , Masato Hagimoto , Hideki Hara , Masakatsu Yamamoto
发明人： Satoshi Kawanaka , Atsushi Nakamura , Masato Hagimoto , Hideki Hara , Masakatsu Yamamoto
IPC分类号： H01S5/22 , H01L33/00
CPC分类号： H01S5/34326 , B82Y20/00 , H01S5/0202 , H01S5/028 , H01S5/0282 , H01S5/0287 , H01S5/1017 , H01S5/22 , H01S2301/18
摘要： A semiconductor laser diode device with small driving current and no distortion in the projected image. The semiconductor laser diode includes an n-GaAs substrate and, an n-cladding layer on the n-GaAs substrate, an active layer, a p-clad layer, a multilayer formed from sequentially laminated p-contact layers, and a ridge formed by selectively etching from the upper surface of the p-contact active layer to a specified depth on the p-contact layer, and an insulating film deposited on the upper surface side of the n-GaAs substrate, and formed from the side surface of the ridge to the edge periphery of the n-GaAs substrate, and a p-electrode formed on the insulating layer deposited on the ridge of the P-contact layer, and an n-type electrode formed on the lower surface of the n-GaAs substrate; and the n-GaAs substrate structure possesses a side edge serving as an absorption layer to absorb light emitted at the active layer wavelength; and a groove is fabricated at the side edge forming the front facet (forward emission side), to a depth from the p-cladding layer exceeding the active layer, from a p-cladding layer section a specified distance away from the side of the ridge along the edge, to the side of the active layer; and the groove is covered by the insulating layer.
摘要翻译：半导体激光二极管器件，驱动电流小，投影图像无变形。半导体激光二极管包括n-GaAs衬底和在n-GaAs衬底上的n包层，由有序层，p覆层，由顺序层压的p-接触层形成的多层，以及由从p接触有源层的上表面选择性地蚀刻到p接触层上的指定深度，以及沉积在n-GaAs衬底的上表面侧上的绝缘膜，并且从该脊的侧表面形成在p型接触层的隆起部上形成的绝缘层上形成的p电极和形成在n-GaAs衬底的下表面上的n型电极，并且n-GaAs衬底结构具有用作吸收层的侧边缘以吸收以有源层波长发射的光; 并且在距离脊侧的规定距离处的p型包覆层部分形成从形成前面（正向发射侧）的侧边缘到从p型包覆层超过有源层的深度的沟槽沿边缘，到活动层的一侧; 并且沟槽被绝缘层覆盖。

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