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1. 发明授权

US07720127B2 Opto-semiconductor devices 有权
标题翻译：光电半导体器件
公开(公告)号：US07720127B2
公开(公告)日：2010-05-18
申请号：US12232652
申请日：2008-09-22
申请人： Yutaka Inoue , Kazunori Saitoh , Hiroshi Hamada , Masato Hagimoto , Susumu Sorimachi
发明人： Yutaka Inoue , Kazunori Saitoh , Hiroshi Hamada , Masato Hagimoto , Susumu Sorimachi
IPC分类号： H01S3/097
CPC分类号： H01S5/0224 , B82Y20/00 , H01S5/02212 , H01S5/02272 , H01S5/02476 , H01S5/0425 , H01S5/16 , H01S5/2081 , H01S5/22 , H01S5/34326 , H01S2301/14
摘要： An opto-semiconductor device. An opto-semiconductor element includes a semiconductor substrate, a multilayered semiconductor layer formed on a first surface of the semiconductor substrate and having a resonator, a first electrode with multiple conductive layers formed on the multilayered semiconductor layer, and a second electrode formed on a second surface of the semiconductor substrate. A support substrate has a first surface formed with a fixing portion having a conductive layer for fixing the first electrode connected thereto through a bonding material. Bonding material and conductive layers forming the first electrode react to form a reaction layer. The difference in thermal expansion coefficient between semiconductor substrate and support substrate is not more than ±50%. A second barrier metal layer not reactive with bonding material is formed inside the first electrode uppermost conductive layer, while uppermost layer reacts with the bonding material to form the reaction layer.
摘要翻译：光电半导体器件。光半导体元件包括半导体衬底，形成在半导体衬底的第一表面上并具有谐振器的多层半导体层，形成在多层半导体层上的多个导电层的第一电极和形成在第二层上的第二电极半导体衬底的表面。支撑基板具有形成有固定部的第一表面，该固定部具有用于通过接合材料固定与其连接的第一电极的导电层。形成第一电极的接合材料和导电层反应形成反应层。半导体衬底和支撑衬底之间的热膨胀系数差不超过±50％。在第一电极最上层的导电层的内部形成与接合材料不反应的第二阻挡金属层，而最上层与接合材料反应形成反应层。

2. 发明申请

US20060222031A1 Opto-semiconductor devices 有权
标题翻译：光电半导体器件
公开(公告)号：US20060222031A1
公开(公告)日：2006-10-05
申请号：US11387986
申请日：2006-03-24
申请人： Yutaka Inoue , Kazunori Saitoh , Hiroshi Hamada , Masato Hagimoto , Susumu Sorimachi
发明人： Yutaka Inoue , Kazunori Saitoh , Hiroshi Hamada , Masato Hagimoto , Susumu Sorimachi
IPC分类号： H01S5/00 , H01S3/04
CPC分类号： H01S5/0224 , B82Y20/00 , H01S5/02212 , H01S5/02272 , H01S5/02476 , H01S5/0425 , H01S5/16 , H01S5/2081 , H01S5/22 , H01S5/34326 , H01S2301/14
摘要： An opto-semiconductor device. An opto-semiconductor element includes a semiconductor substrate, a multilayered semiconductor layer formed on a first surface of the semiconductor substrate and having a resonator, a first electrode with multiple conductive layers formed on the multilayered semiconductor layer, and a second electrode formed on a second surface of the semiconductor substrate. A support substrate has a first surface formed with a fixing portion having a conductive layer for fixing the first electrode connected thereto through a bonding material. Bonding material and conductive layers forming the first electrode react to form a reaction layer. The difference in thermal expansion coefficient between semiconductor substrate and support substrate is not more than ±50%. A second barrier metal layer not reactive with bonding material is formed inside the first electrode uppermost conductive layer, while uppermost layer reacts with the bonding material to form the reaction layer.
摘要翻译：光电半导体器件。光半导体元件包括半导体衬底，形成在半导体衬底的第一表面上并具有谐振器的多层半导体层，形成在多层半导体层上的多个导电层的第一电极和形成在第二层上的第二电极半导体衬底的表面。支撑基板具有形成有固定部的第一表面，该固定部具有用于通过接合材料固定与其连接的第一电极的导电层。形成第一电极的接合材料和导电层反应形成反应层。半导体衬底和支撑衬底之间的热膨胀系数差不超过±50％。在第一电极最上层的导电层的内部形成与接合材料不反应的第二阻挡金属层，而最上层与接合材料反应形成反应层。

3. 发明授权

US07443901B2 Opto-semiconductor devices 有权
标题翻译：光电半导体器件
公开(公告)号：US07443901B2
公开(公告)日：2008-10-28
申请号：US11387986
申请日：2006-03-24
申请人： Yutaka Inoue , Kazunori Saitoh , Hiroshi Hamada , Masato Hagimoto , Susumu Sorimachi
发明人： Yutaka Inoue , Kazunori Saitoh , Hiroshi Hamada , Masato Hagimoto , Susumu Sorimachi
IPC分类号： H01S3/097
CPC分类号： H01S5/0224 , B82Y20/00 , H01S5/02212 , H01S5/02272 , H01S5/02476 , H01S5/0425 , H01S5/16 , H01S5/2081 , H01S5/22 , H01S5/34326 , H01S2301/14
摘要： An opto-semiconductor device. An opto-semiconductor element includes a semiconductor substrate, a multilayered semiconductor layer formed on a first surface of the semiconductor substrate and having a resonator, a first electrode with multiple conductive layers formed on the multilayered semiconductor layer, and a second electrode formed on a second surface of the semiconductor substrate. A support substrate has a first surface formed with a fixing portion having a conductive layer for fixing the first electrode connected thereto through a bonding material. Bonding material and conductive layers forming the first electrode react to form a reaction layer. The difference in thermal expansion coefficient between semiconductor substrate and support substrate is not more than ±50%. A second barrier metal layer not reactive with bonding material is formed inside the first electrode uppermost conductive layer, while uppermost layer reacts with the bonding material to form the reaction layer.
摘要翻译：光电半导体器件。光半导体元件包括半导体衬底，形成在半导体衬底的第一表面上并具有谐振器的多层半导体层，形成在多层半导体层上的多个导电层的第一电极和形成在第二层上的第二电极半导体衬底的表面。支撑基板具有形成有固定部的第一表面，该固定部具有用于通过接合材料固定与其连接的第一电极的导电层。形成第一电极的接合材料和导电层反应形成反应层。半导体衬底和支撑衬底之间的热膨胀系数差不超过±50％。在第一电极最上层的导电层的内部形成与接合材料不反应的第二阻挡金属层，而最上层与接合材料反应形成反应层。

4. 发明申请

US20090041076A1 Opto-semiconductor devices 有权
标题翻译：光电半导体器件
公开(公告)号：US20090041076A1
公开(公告)日：2009-02-12
申请号：US12232652
申请日：2008-09-22
申请人： Yutaka Inoue , Kazunori Saitoh , Hiroshi Hamada , Masato Hagimoto , Susumu Sorimachi
发明人： Yutaka Inoue , Kazunori Saitoh , Hiroshi Hamada , Masato Hagimoto , Susumu Sorimachi
IPC分类号： H01S5/00
CPC分类号： H01S5/0224 , B82Y20/00 , H01S5/02212 , H01S5/02272 , H01S5/02476 , H01S5/0425 , H01S5/16 , H01S5/2081 , H01S5/22 , H01S5/34326 , H01S2301/14
摘要： An opto-semiconductor device. An opto-semiconductor element includes a semiconductor substrate, a multilayered semiconductor layer formed on a first surface of the semiconductor substrate and having a resonator, a first electrode with multiple conductive layers formed on the multilayered semiconductor layer, and a second electrode formed on a second surface of the semiconductor substrate. A support substrate has a first surface formed with a fixing portion having a conductive layer for fixing the first electrode connected thereto through a bonding material. Bonding material and conductive layers forming the first electrode react to form a reaction layer. The difference in thermal expansion coefficient between semiconductor substrate and support substrate is not more than 50%. A second barrier metal layer not reactive with bonding material is formed inside the first electrode uppermost conductive layer, while uppermost layer reacts with the bonding material to form the reaction layer.
摘要翻译：光电半导体器件。光半导体元件包括半导体衬底，形成在半导体衬底的第一表面上并具有谐振器的多层半导体层，形成在多层半导体层上的多个导电层的第一电极和形成在第二层上的第二电极半导体衬底的表面。支撑基板具有形成有固定部的第一表面，该固定部具有用于通过接合材料固定与其连接的第一电极的导电层。形成第一电极的接合材料和导电层反应形成反应层。半导体衬底和支撑衬底之间的热膨胀系数差不超过50％。在第一电极最上层的导电层的内部形成与接合材料不反应的第二阻挡金属层，而最上层与接合材料反应形成反应层。

5. 发明授权

US07674391B2 Manufacturing method of optical semiconductor device 有权
标题翻译：光学半导体器件的制造方法
公开(公告)号：US07674391B2
公开(公告)日：2010-03-09
申请号：US11700215
申请日：2007-01-31
申请人： Hiroshi Hamada , Kazunori Saitoh
发明人： Hiroshi Hamada , Kazunori Saitoh
IPC分类号： B29D11/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/028 , H01S5/209 , H01S5/2201 , H01S5/2214 , H01S5/34326 , H01S2301/185
摘要： It is an objective to control the occurrence of the disorder of a far-field pattern and of an optical axial shift. A manufacturing method of a semiconductor laser device has the step for preparing a semiconductor substrate which has growth of a multi-layer including an active layer, the step for forming a mask over the growth of a multi-layer, and a step for forming a stripe-shaped ridge by dry etching and wet etching. A structure stacking a p-type AlGaInP layer, an etch-stop layer, a p-type Alx=0.7GaInP layer, a p-type Alx=0.6GaInP layer, a p-type GaAs layer, in order, over the active layer is taken in order to make the tailing part created in the dry etching process smaller by wet etching. The tailing part is composed of a p-type Alx=0.7GaInP layer including a high mixed crystal ratio of aluminum. Therefore, the p-type Alx=0.7GaInP layer is etched faster than the p-type Alx=0.6GaInP layer during wet etching, so that the tailing part becomes smaller, the far-field pattern of the semiconductor laser device is not disordered, and the optical axis shift does not occur.
摘要翻译：目的是控制远场图案和光轴向偏移的发生。半导体激光器件的制造方法具有制备半导体衬底的步骤，该半导体衬底具有包括有源层的多层的生长，用于在多层生长上形成掩模的步骤，以及用于形成通过干蚀刻和湿蚀刻形成条形脊。在有源层上依次堆叠p型AlGaInP层，蚀刻停止层，p型Al x = 0.7GaInP层，p型Al x = 0.6 GaInP层，p型GaAs层的结构是为了使通过湿法蚀刻在干式蚀刻工艺中产生的拖尾部分变得更小。尾部由包含铝的高混合比的p型Al x = 0.7GaInP层构成。因此，在湿蚀刻期间，p型Al x = 0.7GaInP层比p型Al x = 0.6GaInP层蚀刻得更快，使得尾部变小，半导体激光器件的远场图案不会紊乱，并且不发生光轴偏移。

6. 发明申请

US20070284336A1 Manufacturing method of optical semiconductor device 有权
标题翻译：光学半导体器件的制造方法
公开(公告)号：US20070284336A1
公开(公告)日：2007-12-13
申请号：US11700215
申请日：2007-01-31
申请人： Hiroshi Hamada , Kazunori Saitoh
发明人： Hiroshi Hamada , Kazunori Saitoh
IPC分类号： C03C15/00 , C03C25/68
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/028 , H01S5/209 , H01S5/2201 , H01S5/2214 , H01S5/34326 , H01S2301/185
摘要： It is an objective to control the occurrence of the disorder of a far-field pattern and of an optical axial shift. A manufacturing method of a semiconductor laser device has the step for preparing a semiconductor substrate which has growth of a multi-layer including an active layer, the step for forming a mask over the growth of a multi-layer, and a step for forming a stripe-shaped ridge by dry etching and wet etching. A structure stacking a p-type AlGaInP layer, an etch-stop layer, a p-type Alx=0.7GaInP layer, a p-type Alx=0.6GaInP layer, a p-type GaAs layer, in order, over the active layer is taken in order to make the tailing part created in the dry etching process smaller by wet etching. The tailing part is composed of a p-type Alx=0.7GaInP layer including a high mixed crystal ratio of aluminum. Therefore, the p-type Alx=0.7GaInP layer is etched faster than the p-type Alx=0.6GaInP layer during wet etching, so that the tailing part becomes smaller, the far-field pattern of the semiconductor laser device is not disordered, and the optical axis shift does not occur.
摘要翻译：目的是控制远场图案和光轴向偏移的发生。半导体激光器件的制造方法具有制备半导体衬底的步骤，该半导体衬底具有包括有源层的多层的生长，用于在多层生长上形成掩模的步骤，以及用于形成通过干蚀刻和湿蚀刻形成条形脊。堆叠p型AlGaInP层，蚀刻停止层，p型Al x = 0.7 GaInP层，p型Al x = 0.6 GaInP的结构层，p型GaAs层，依次在有源层上，以使得在干式蚀刻工艺中产生的拖尾部分通过湿蚀刻较小。尾部由包含铝的高混合比的p型Al x = 0.7 GaInP层构成。因此，在湿蚀刻期间，p型Al x = 0.7 GaInP层比p型Al x = 0.6 GaInP层蚀刻得更快，使得尾部变成较小的半导体激光器件的远场图案不会发生紊乱，并且不发生光轴偏移。

7. 发明申请

US20060222030A1 Optical semiconductor device, manufacturing method therefor, and optical semiconductor apparatus 有权
标题翻译：光半导体装置及其制造方法以及光半导体装置
公开(公告)号：US20060222030A1
公开(公告)日：2006-10-05
申请号：US11349172
申请日：2006-02-08
申请人： Kazunori Saitoh , Hiroshi Hamada
发明人： Kazunori Saitoh , Hiroshi Hamada
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01L2224/48091 , H01L2224/48465 , H01S5/02212 , H01S5/02461 , H01S5/0425 , H01S5/16 , H01S5/2081 , H01S5/34326 , H01L2924/00014 , H01L2924/00
摘要： A highly reliable optical semiconductor device insusceptible to degradation in the characteristics thereof. An n-type buffer layer, n-type first cladding layer, active layer, a p-type first layer of the second cladding layer, p-type etch-stop layer, p-type second layer of the second cladding layer, and p-type contact layer are formed an n-type semiconductor substrate. Two lengths of separation grooves are formed in parallel in such a way as to reach the underside of the p-type second layer of the second cladding layer from the top face of the contact layer, and a ridge is formed between the respective separation grooves. The ridge comprises a lower portion thereof, made up of the second layer of the second cladding layer, and a portion of the contact layer, corresponding to the ridge, made up of the contact layer. Side parts of the top face of the portion of the contact layer, corresponding to the ridge, facing the separation grooves, respectively, are turned to tilted faces, respectively, and a barrier metal layer is formed on top of the tilted faces. Portions extending from side faces of the lower portion of the ridge to run across the respective separation grooves are covered with an insulating film. Since the tilted faces are formed at the respective side parts of the top face of the portion of the contact layer, no stepping occurs to the barrier metal layer. Accordingly, Au of an Au layer formed outside of the barrier metal layer is prevented from being diffused into the portion of the contact layer, corresponding to the ridge, made of GaAs, through steeped parts of the barrier metal layer.
摘要翻译：高度可靠的光学半导体器件，其特性不易降解。 n型缓冲层，n型第一覆层，有源层，第二覆层的p型第一层，p型蚀刻停止层，第二覆层的p型第二层和p 型接触层形成为n型半导体衬底。从接触层的顶面到达第二包覆层的p型第二层的下侧的方式平行地形成两段分隔槽，在各分离槽之间形成有脊。脊包括由第二覆层的第二层构成的下部，以及由接触层构成的与脊相对应的接触层的一部分。接触层的分别对应于脊的部分的顶面的侧面分别转向倾斜面，并且在倾斜面的顶部上形成阻挡金属层。从脊的下部的侧面延伸穿过相应的分隔槽的部分被绝缘膜覆盖。由于倾斜面形成在接触层的部分的顶面的各个侧部，所以不会对阻挡金属层发生阶梯。因此，通过阻挡金属层的浸渍部分，防止形成在阻挡金属层外侧的Au层的Au扩散到对应于由GaAs制成的脊的接触层的部分中。

8. 发明授权

US07463662B2 Optical semiconductor device, manufacturing method therefor, and optical semiconductor apparatus 有权
标题翻译：光半导体装置及其制造方法以及光半导体装置
公开(公告)号：US07463662B2
公开(公告)日：2008-12-09
申请号：US11349172
申请日：2006-02-08
申请人： Kazunori Saitoh , Hiroshi Hamada
发明人： Kazunori Saitoh , Hiroshi Hamada
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01L2224/48091 , H01L2224/48465 , H01S5/02212 , H01S5/02461 , H01S5/0425 , H01S5/16 , H01S5/2081 , H01S5/34326 , H01L2924/00014 , H01L2924/00
摘要： A highly reliable optical semiconductor device insusceptible to degradation in the characteristics thereof. An n-type buffer layer, n-type first cladding layer, active layer, a p-type first layer of the second cladding layer, p-type etch-stop layer, p-type second layer of the second cladding layer, and p-type contact layer are formed an n-type semiconductor substrate. Two lengths of separation grooves are formed in parallel in such a way as to reach the underside of the p-type second layer of the second cladding layer from the top face of the contact layer, and a ridge is formed between the respective separation grooves. The ridge comprises a lower portion thereof, made up of the second layer of the second cladding layer, and a portion of the contact layer, corresponding to the ridge, made up of the contact layer. Side parts of the top face of the portion of the contact layer, corresponding to the ridge, facing the separation grooves, respectively, are turned to tilted faces, respectively, and a barrier metal layer is formed on top of the tilted faces. Portions extending from side faces of the lower portion of the ridge to run across the respective separation grooves are covered with an insulating film. Since the tilted faces are formed at the respective side parts of the top face of the portion of the contact layer, no stepping occurs to the barrier metal layer. Accordingly, Au of an Au layer formed outside of the barrier metal layer is prevented from being diffused into the portion of the contact layer, corresponding to the ridge, made of GaAs, through steeped parts of the barrier metal layer.
摘要翻译：高度可靠的光学半导体器件，其特性不易降解。 n型缓冲层，n型第一覆层，有源层，第二覆层的p型第一层，p型蚀刻停止层，第二覆层的p型第二层和p 型接触层形成为n型半导体衬底。从接触层的顶面到达第二包覆层的p型第二层的下侧的方式平行地形成两段分隔槽，在各分离槽之间形成有脊。脊包括由第二覆层的第二层构成的下部，以及由接触层构成的与脊相对应的接触层的一部分。接触层的分别对应于脊的部分的顶面的侧面分别转向倾斜面，并且在倾斜面的顶部上形成阻挡金属层。从脊的下部的侧面延伸穿过相应的分隔槽的部分被绝缘膜覆盖。由于倾斜面形成在接触层的部分的顶面的各个侧部，所以不会对阻挡金属层发生阶梯。因此，通过阻挡金属层的浸渍部分，防止形成在阻挡金属层外侧的Au层的Au扩散到对应于由GaAs制成的脊的接触层的部分中。

9. 发明申请

US20090027978A1 Semiconductor device and semiconductor signal processing apparatus 失效
标题翻译：半导体装置及半导体信号处理装置
公开(公告)号：US20090027978A1
公开(公告)日：2009-01-29
申请号：US12213131
申请日：2008-06-16
申请人： Hideyuki Noda , Kazunori Saitoh , Kazutami Ariomoto , Katsumi Dosaka
发明人： Hideyuki Noda , Kazunori Saitoh , Kazutami Ariomoto , Katsumi Dosaka
IPC分类号： G11C7/10
CPC分类号： G11C7/1006
摘要： A memory cell mat is divided into a plurality of entries, and an arithmetic logic unit is arranged corresponding to each entry. Between the entries and the corresponding arithmetic logic units, arithmetic/logic operation is executed in bit-serial and entry-parallel manner. Where parallel operation is not very effective, data is transferred in entry-serial and bit-parallel manner to a group of processors provided at a lower portion of the memory mat. In this manner, a large amount of data can be processed at high speed regardless of the contents of operation or data bit width.
摘要翻译：存储单元垫被分成多个条目，并且对应于每个条目布置了算术逻辑单元。在条目和相应的算术逻辑单元之间，以比特串行和并行方式执行算术/逻辑运算。在并行操作不是非常有效的情况下，数据以串行和位并行方式传送到设置在存储器垫的下部的一组处理器。以这种方式，无论操作内容或数据位宽度如何，都可以高速处理大量的数据。

10. 发明授权

US06192011B1 Gain controlling apparatus and method, information reproducing apparatus and method, and information recording apparatus and method 失效
标题翻译：增益控制装置和方法，信息再现装置和方法以及信息记录装置和方法
公开(公告)号：US06192011B1
公开(公告)日：2001-02-20
申请号：US09443137
申请日：1999-11-19
申请人： Kazuhiro Kiyoura , Toshiyuki Suzuki , Takeshi Matsumoto , Hiroshi Kitagawa , Takehiro Takada , Kazunori Saitoh
发明人： Kazuhiro Kiyoura , Toshiyuki Suzuki , Takeshi Matsumoto , Hiroshi Kitagawa , Takehiro Takada , Kazunori Saitoh
IPC分类号： G11B700
CPC分类号： G11B7/005 , G11B7/0945 , G11B20/10009
摘要： A gain controlling apparatus is provided with: an adjusting device (6, 7, 8) for adjusting a gain of a generation signal, which is generated on the basis of a light reception signal obtained by receiving a reflection light of a light beam from an information recording medium (1); and a detecting device (21, 14, 16) for detecting whether or not the generation signal is generated and outputting a detection signal when the generation signal is generated. The gain controlling apparatus is also provided with a controlling device (18) for controlling the adjusting device to increase the gain by a predetermined value set in advance when the detection signal is not outputted by the detecting device.
摘要翻译：一种增益控制装置，具备：调整装置（6,7,8），用于调整发电信号的增益，该调整装置是根据通过接收来自光源的光束的反射光而得到的光接收信号信息记录介质（1）; 和检测装置（21,14,16），用于检测生成信号是否产生，并在生成信号时输出检测信号。增益控制装置还具有控制装置（18），用于当检测装置未输出检测信号时，控制调节装置将增益增加预先设定的预定值。

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