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1. 发明授权

US07720127B2 Opto-semiconductor devices 有权
标题翻译：光电半导体器件
公开(公告)号：US07720127B2
公开(公告)日：2010-05-18
申请号：US12232652
申请日：2008-09-22
申请人： Yutaka Inoue , Kazunori Saitoh , Hiroshi Hamada , Masato Hagimoto , Susumu Sorimachi
发明人： Yutaka Inoue , Kazunori Saitoh , Hiroshi Hamada , Masato Hagimoto , Susumu Sorimachi
IPC分类号： H01S3/097
CPC分类号： H01S5/0224 , B82Y20/00 , H01S5/02212 , H01S5/02272 , H01S5/02476 , H01S5/0425 , H01S5/16 , H01S5/2081 , H01S5/22 , H01S5/34326 , H01S2301/14
摘要： An opto-semiconductor device. An opto-semiconductor element includes a semiconductor substrate, a multilayered semiconductor layer formed on a first surface of the semiconductor substrate and having a resonator, a first electrode with multiple conductive layers formed on the multilayered semiconductor layer, and a second electrode formed on a second surface of the semiconductor substrate. A support substrate has a first surface formed with a fixing portion having a conductive layer for fixing the first electrode connected thereto through a bonding material. Bonding material and conductive layers forming the first electrode react to form a reaction layer. The difference in thermal expansion coefficient between semiconductor substrate and support substrate is not more than ±50%. A second barrier metal layer not reactive with bonding material is formed inside the first electrode uppermost conductive layer, while uppermost layer reacts with the bonding material to form the reaction layer.
摘要翻译：光电半导体器件。光半导体元件包括半导体衬底，形成在半导体衬底的第一表面上并具有谐振器的多层半导体层，形成在多层半导体层上的多个导电层的第一电极和形成在第二层上的第二电极半导体衬底的表面。支撑基板具有形成有固定部的第一表面，该固定部具有用于通过接合材料固定与其连接的第一电极的导电层。形成第一电极的接合材料和导电层反应形成反应层。半导体衬底和支撑衬底之间的热膨胀系数差不超过±50％。在第一电极最上层的导电层的内部形成与接合材料不反应的第二阻挡金属层，而最上层与接合材料反应形成反应层。

2. 发明申请

US20060222031A1 Opto-semiconductor devices 有权
标题翻译：光电半导体器件
公开(公告)号：US20060222031A1
公开(公告)日：2006-10-05
申请号：US11387986
申请日：2006-03-24
申请人： Yutaka Inoue , Kazunori Saitoh , Hiroshi Hamada , Masato Hagimoto , Susumu Sorimachi
发明人： Yutaka Inoue , Kazunori Saitoh , Hiroshi Hamada , Masato Hagimoto , Susumu Sorimachi
IPC分类号： H01S5/00 , H01S3/04
CPC分类号： H01S5/0224 , B82Y20/00 , H01S5/02212 , H01S5/02272 , H01S5/02476 , H01S5/0425 , H01S5/16 , H01S5/2081 , H01S5/22 , H01S5/34326 , H01S2301/14
摘要： An opto-semiconductor device. An opto-semiconductor element includes a semiconductor substrate, a multilayered semiconductor layer formed on a first surface of the semiconductor substrate and having a resonator, a first electrode with multiple conductive layers formed on the multilayered semiconductor layer, and a second electrode formed on a second surface of the semiconductor substrate. A support substrate has a first surface formed with a fixing portion having a conductive layer for fixing the first electrode connected thereto through a bonding material. Bonding material and conductive layers forming the first electrode react to form a reaction layer. The difference in thermal expansion coefficient between semiconductor substrate and support substrate is not more than ±50%. A second barrier metal layer not reactive with bonding material is formed inside the first electrode uppermost conductive layer, while uppermost layer reacts with the bonding material to form the reaction layer.
摘要翻译：光电半导体器件。光半导体元件包括半导体衬底，形成在半导体衬底的第一表面上并具有谐振器的多层半导体层，形成在多层半导体层上的多个导电层的第一电极和形成在第二层上的第二电极半导体衬底的表面。支撑基板具有形成有固定部的第一表面，该固定部具有用于通过接合材料固定与其连接的第一电极的导电层。形成第一电极的接合材料和导电层反应形成反应层。半导体衬底和支撑衬底之间的热膨胀系数差不超过±50％。在第一电极最上层的导电层的内部形成与接合材料不反应的第二阻挡金属层，而最上层与接合材料反应形成反应层。

3. 发明授权

US07443901B2 Opto-semiconductor devices 有权
标题翻译：光电半导体器件
公开(公告)号：US07443901B2
公开(公告)日：2008-10-28
申请号：US11387986
申请日：2006-03-24
申请人： Yutaka Inoue , Kazunori Saitoh , Hiroshi Hamada , Masato Hagimoto , Susumu Sorimachi
发明人： Yutaka Inoue , Kazunori Saitoh , Hiroshi Hamada , Masato Hagimoto , Susumu Sorimachi
IPC分类号： H01S3/097
CPC分类号： H01S5/0224 , B82Y20/00 , H01S5/02212 , H01S5/02272 , H01S5/02476 , H01S5/0425 , H01S5/16 , H01S5/2081 , H01S5/22 , H01S5/34326 , H01S2301/14
摘要： An opto-semiconductor device. An opto-semiconductor element includes a semiconductor substrate, a multilayered semiconductor layer formed on a first surface of the semiconductor substrate and having a resonator, a first electrode with multiple conductive layers formed on the multilayered semiconductor layer, and a second electrode formed on a second surface of the semiconductor substrate. A support substrate has a first surface formed with a fixing portion having a conductive layer for fixing the first electrode connected thereto through a bonding material. Bonding material and conductive layers forming the first electrode react to form a reaction layer. The difference in thermal expansion coefficient between semiconductor substrate and support substrate is not more than ±50%. A second barrier metal layer not reactive with bonding material is formed inside the first electrode uppermost conductive layer, while uppermost layer reacts with the bonding material to form the reaction layer.
摘要翻译：光电半导体器件。光半导体元件包括半导体衬底，形成在半导体衬底的第一表面上并具有谐振器的多层半导体层，形成在多层半导体层上的多个导电层的第一电极和形成在第二层上的第二电极半导体衬底的表面。支撑基板具有形成有固定部的第一表面，该固定部具有用于通过接合材料固定与其连接的第一电极的导电层。形成第一电极的接合材料和导电层反应形成反应层。半导体衬底和支撑衬底之间的热膨胀系数差不超过±50％。在第一电极最上层的导电层的内部形成与接合材料不反应的第二阻挡金属层，而最上层与接合材料反应形成反应层。

4. 发明申请

US20090041076A1 Opto-semiconductor devices 有权
标题翻译：光电半导体器件
公开(公告)号：US20090041076A1
公开(公告)日：2009-02-12
申请号：US12232652
申请日：2008-09-22
申请人： Yutaka Inoue , Kazunori Saitoh , Hiroshi Hamada , Masato Hagimoto , Susumu Sorimachi
发明人： Yutaka Inoue , Kazunori Saitoh , Hiroshi Hamada , Masato Hagimoto , Susumu Sorimachi
IPC分类号： H01S5/00
CPC分类号： H01S5/0224 , B82Y20/00 , H01S5/02212 , H01S5/02272 , H01S5/02476 , H01S5/0425 , H01S5/16 , H01S5/2081 , H01S5/22 , H01S5/34326 , H01S2301/14
摘要： An opto-semiconductor device. An opto-semiconductor element includes a semiconductor substrate, a multilayered semiconductor layer formed on a first surface of the semiconductor substrate and having a resonator, a first electrode with multiple conductive layers formed on the multilayered semiconductor layer, and a second electrode formed on a second surface of the semiconductor substrate. A support substrate has a first surface formed with a fixing portion having a conductive layer for fixing the first electrode connected thereto through a bonding material. Bonding material and conductive layers forming the first electrode react to form a reaction layer. The difference in thermal expansion coefficient between semiconductor substrate and support substrate is not more than 50%. A second barrier metal layer not reactive with bonding material is formed inside the first electrode uppermost conductive layer, while uppermost layer reacts with the bonding material to form the reaction layer.
摘要翻译：光电半导体器件。光半导体元件包括半导体衬底，形成在半导体衬底的第一表面上并具有谐振器的多层半导体层，形成在多层半导体层上的多个导电层的第一电极和形成在第二层上的第二电极半导体衬底的表面。支撑基板具有形成有固定部的第一表面，该固定部具有用于通过接合材料固定与其连接的第一电极的导电层。形成第一电极的接合材料和导电层反应形成反应层。半导体衬底和支撑衬底之间的热膨胀系数差不超过50％。在第一电极最上层的导电层的内部形成与接合材料不反应的第二阻挡金属层，而最上层与接合材料反应形成反应层。

5. 发明授权

US07792173B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US07792173B2
公开(公告)日：2010-09-07
申请号：US12328186
申请日：2008-12-04
申请人： Yoshihiko Iga , Yutaka Inoue , Hiroshi Moriya , Yasuhisa Semba , Susumu Sorimachi
发明人： Yoshihiko Iga , Yutaka Inoue , Hiroshi Moriya , Yasuhisa Semba , Susumu Sorimachi
IPC分类号： H01S5/00
CPC分类号： H01S5/0224 , B82Y20/00 , H01S5/02212 , H01S5/02272 , H01S5/02476 , H01S5/0425 , H01S5/0683 , H01S5/22 , H01S5/34326 , H01S5/4031
摘要： In a multi-beam semiconductor laser device, relative difference in shear strain applied to each of light-emitting portions of a laser chip mounted on a submount is suppressed, thereby reducing relative difference in polarization angle. A semiconductor laser element array mounted on a submount has a structure in which a semiconductor layer having two ridge portions is stacked on a substrate, and Au plating layers are formed on the surfaces of p type electrodes formed on the ridge portions. In each of the ridge portions, a central position of the Au plating layer in a width direction is intentionally displaced with respect to a central position of the underlying light-emitting portion in a width direction, so that shear strain is applied to each of the light-emitting portions at a stage before the semiconductor laser element array is mounted on the submount.
摘要翻译：在多光束半导体激光装置中，抑制了施加到安装在基座上的激光芯片的各发光部分的剪切应变的相对差异，从而减小了偏振角的相对差异。安装在基座上的半导体激光元件阵列具有其中在基板上层叠具有两个脊部的半导体层的结构，并且在形成在脊部上的p型电极的表面上形成Au镀层。在每个脊部中，Au镀层在宽度方向上的中心位置相对于下面的发光部分的宽度方向的中心位置有意地移位，使得剪切应变施加到半导体激光元件阵列之前的阶段的发光部分安装在基座上。

6. 发明授权

US08442085B2 Semiconductor optical device 有权
标题翻译：半导体光学器件
公开(公告)号：US08442085B2
公开(公告)日：2013-05-14
申请号：US12948794
申请日：2010-11-18
申请人： Susumu Sorimachi , Yutaka Inoue , Yasuhisa Semba
发明人： Susumu Sorimachi , Yutaka Inoue , Yasuhisa Semba
IPC分类号： H01S5/00
CPC分类号： H01S5/0224 , H01S5/02272 , H01S5/0425 , H01S5/22
摘要： By forming upper-bank patterns made of Au with a thickness of 1.5 μm or larger on bank portions, a solder material on a submount and a surface of a conductive layer in an upper part of a ridge portion of a laser chip are separated so as not to be in contact with each other, thereby preventing the stress generated in a bonding portion when bonding the laser chip and the submount from being applied to the ridge portion.
摘要翻译：通过在堤部形成由厚度为1.5μm或更大的Au制成的上堤图案，将激光芯片的脊部的上部的基座上的焊料材料和导电层的表面分离成如下不会彼此接触，从而防止当将激光芯片和副安装座接合到脊部时在接合部分产生的应力。

7. 发明授权

US07653114B2 Semiconductor laser diode and the manufacturing method thereof 有权
标题翻译：半导体激光二极管及其制造方法
公开(公告)号：US07653114B2
公开(公告)日：2010-01-26
申请号：US12153681
申请日：2008-05-22
申请人： Yutaka Inoue , Yasuhisa Semba , Susumu Sorimachi , Kouichi Kouzu
发明人： Yutaka Inoue , Yasuhisa Semba , Susumu Sorimachi , Kouichi Kouzu
IPC分类号： H01S5/00 , H01S3/097 , H01L21/00
CPC分类号： H01S5/22 , H01L2224/48091 , H01S5/02212 , H01S5/0224 , H01S5/02268 , H01S5/02272 , H01S5/0425 , H01S5/4031 , H01L2924/00014
摘要： A multibeam semiconductor laser diode having: an n-type semiconductor substrate; an n-type clad layer, an active layer, a p-type clad layer and a contact layer; a plurality of partitioning grooves extending from one end to the other end of the substrate and formed from the contact layer to a predetermined depth of the p-type clad layer; a stripe-shaped ridge sandwiched between two separation grooves; an insulating layer covering an area from each side wall of the contact layer of each ridge to an end of the partitioning region via the separation groove; a first electrode formed on a second plane of the substrate; and a second electrode formed in each partitioning region covering an area above the ridge, separation grooves and multilayer semiconductor layers outside the separation grooves, the second electrode being constituted of a lower second electrode layer and an upper second plated layer.
摘要翻译：一种具有n型半导体衬底的多光子半导体激光二极管， n型覆盖层，有源层，p型覆盖层和接触层; 多个分隔槽，从所述基板的一端延伸到另一端，并从所述接触层形成为所述p型覆盖层的预定深度; 夹在两个分离槽之间的条状脊; 绝缘层，其经由分离槽覆盖从每个脊的接触层的每个侧壁到分隔区域的端部的区域; 形成在所述基板的第二平面上的第一电极; 以及形成在覆盖所述脊上方的区域的分隔区域中的第二电极，分离槽和分离槽外侧的多层半导体层，所述第二电极由下部第二电极层和上部第二镀层构成。

8. 发明申请

US20080291960A1 Semiconductor laser diode and the manufacturing method thereof 有权
标题翻译：半导体激光二极管及其制造方法
公开(公告)号：US20080291960A1
公开(公告)日：2008-11-27
申请号：US12153681
申请日：2008-05-22
申请人： Yutaka Inoue , Yasuhisa Semba , Susumu Sorimachi , Kouichi Kouzu
发明人： Yutaka Inoue , Yasuhisa Semba , Susumu Sorimachi , Kouichi Kouzu
IPC分类号： H01S5/22 , H01L33/00
CPC分类号： H01S5/22 , H01L2224/48091 , H01S5/02212 , H01S5/0224 , H01S5/02268 , H01S5/02272 , H01S5/0425 , H01S5/4031 , H01L2924/00014
摘要： A multibeam semiconductor laser diode having: an n-type semiconductor substrate; an n-type clad layer, an active layer, a p-type clad layer and a contact layer; a plurality of partitioning grooves extending from one end to the other end of the substrate and formed from the contact layer to a predetermined depth of the p-type clad layer; a stripe-shaped ridge sandwiched between two separation grooves; an insulating layer covering an area from each side wall of the contact layer of each ridge to an end of the partitioning region via the separation groove; a first electrode formed on a second plane of the substrate; and a second electrode formed in each partitioning region covering an area above the ridge, separation grooves and multilayer semiconductor layers outside the separation grooves, the second electrode being constituted of a lower second electrode layer and an upper second plated layer.
摘要翻译：一种具有n型半导体衬底的多光子半导体激光二极管， n型覆盖层，有源层，p型覆盖层和接触层; 多个分隔槽，从所述基板的一端延伸到另一端，并从所述接触层形成为所述p型覆盖层的预定深度; 夹在两个分离槽之间的条状脊; 绝缘层，其经由分离槽覆盖从每个脊的接触层的每个侧壁到分隔区域的端部的区域; 形成在所述基板的第二平面上的第一电极; 以及形成在覆盖所述脊上方的区域的分隔区域中的第二电极，分离槽和分离槽外侧的多层半导体层，所述第二电极由下部第二电极层和上部第二镀层构成。

9. 发明申请

US20080203404A1 OPTICAL SEMICONDUCTOR DEVICE 有权
标题翻译：光学半导体器件
公开(公告)号：US20080203404A1
公开(公告)日：2008-08-28
申请号：US12023177
申请日：2008-01-31
申请人： Ryu Washino , Susumu Sorimachi , Daisuke Nakai , Kaoru Okamoto , Shigenori Hayakawa
发明人： Ryu Washino , Susumu Sorimachi , Daisuke Nakai , Kaoru Okamoto , Shigenori Hayakawa
IPC分类号： H01L33/00 , H01L31/00
CPC分类号： H01S5/0425 , H01L31/0224 , H01S5/22
摘要： In an optical semiconductor device that emits or receives light substantially perpendicularly to or in parallel to an active surface formed on a semiconductor substrate, the optical semiconductor device, an electrode that is formed on the active surface side and connected to the active surface is stepped or tapered at an end of the electrode. The electrode of the optical semiconductor device is formed of three layers including an adhesive layer, a diffusion prevention layer, and an Au layer, and the stepped configuration or the taped configuration is formed by a difference of the thickness of the Au layer or the thickness of the adhesive layer/diffusion prevention layer/Au layer.
摘要翻译：在发射或接收与形成在半导体衬底上的有源表面基本垂直或平行的光的光学半导体器件中，光学半导体器件，形成在有源表面侧并连接到有源表面的电极是阶梯形或在电极端部呈锥形。光半导体器件的电极由包括粘合剂层，扩散防止层和Au层的三层形成，并且通过Au层的厚度或厚度的差异来形成台阶状或带状构造的粘合层/扩散防止层/ Au层。

10. 发明申请

US20090147816A1 SEMICONDUCTOR LASER DEVICE 有权
标题翻译：半导体激光器件
公开(公告)号：US20090147816A1
公开(公告)日：2009-06-11
申请号：US12328186
申请日：2008-12-04
申请人： Yoshihiko IGA , Yutaka Inouke , Hiroshi Moriya , Yasuhisa Semba , Susumu Sorimachi
发明人： Yoshihiko IGA , Yutaka Inouke , Hiroshi Moriya , Yasuhisa Semba , Susumu Sorimachi
IPC分类号： H01S5/024 , H01S5/022
CPC分类号： H01S5/0224 , B82Y20/00 , H01S5/02212 , H01S5/02272 , H01S5/02476 , H01S5/0425 , H01S5/0683 , H01S5/22 , H01S5/34326 , H01S5/4031
摘要： In a multi-beam semiconductor laser device, relative difference in shear strain applied to each of light-emitting portions of a laser chip mounted on a submount is suppressed, thereby reducing relative difference in polarization angle. A semiconductor laser element array mounted on a submount has a structure in which a semiconductor layer having two ridge portions is stacked on a substrate, and Au plating layers are formed on the surfaces of p type electrodes formed on the ridge portions. In each of the ridge portions, a central position of the Au plating layer in a width direction is intentionally displaced with respect to a central position of the underlying light-emitting portion in a width direction, so that shear strain is applied to each of the light-emitting portions at a stage before the semiconductor laser element array is mounted on the submount.
摘要翻译：在多光束半导体激光装置中，抑制了施加到安装在基座上的激光芯片的各发光部分的剪切应变的相对差异，从而减小了偏振角的相对差异。安装在基座上的半导体激光元件阵列具有其中在基板上层叠具有两个脊部的半导体层的结构，并且在形成在脊部上的p型电极的表面上形成Au镀层。在每个脊部中，Au镀层在宽度方向上的中心位置相对于下面的发光部分的宽度方向的中心位置有意地移位，使得剪切应变施加到半导体激光元件阵列之前的阶段的发光部分安装在基座上。

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