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1. 发明申请

US20080308036A1 VAPOR-PHASE GROWTH APPARATUS AND VAPOR-PHASE GROWTH METHOD 审中-公开
标题翻译：蒸汽相生长装置和蒸汽相生长方法
公开(公告)号：US20080308036A1
公开(公告)日：2008-12-18
申请号：US12137843
申请日：2008-06-12
申请人： Hideki ITO , Hironobu Hirata , Shinichi Mitani
发明人： Hideki ITO , Hironobu Hirata , Shinichi Mitani
IPC分类号： C30B35/00 , C30B23/02
CPC分类号： C30B35/00 , C23C16/45504 , C23C16/45565 , C30B25/10
摘要： There is provided a vapor-phase growth apparatus which shortens a temperature decrease time of a wafer substrate after an epitaxial growth step to make it easy to realize a high throughput in film formation of an epitaxial layer. The vapor-phase growth apparatus includes a gas supply port formed in a top portion of a reactor, a gas distribution plate arranged in the reactor, a discharge port formed in a bottom portion of the reactor, an annular holder on which a semiconductor wafer is placed to face the gas distribution plate. A separation distance between the gas distribution plate and the annular holder is set such that a cooling gas which flows downward from the gas supply port through the gas distribution plate to decrease the temperature is in a laminar flow state on a surface of the semiconductor wafer or a surface of the annular holder.
摘要翻译：提供了一种气相生长装置，其在外延生长步骤之后缩短晶片衬底的温度降低时间，以使得容易实现外延层的成膜中的高通量。气相生长装置包括形成在反应器的顶部的气体供给口，设置在反应器中的气体分配板，形成在反应器底部的排出口，半导体晶片放置在面对气体分配板。气体分配板和环形保持器之间的分隔距离被设定为使得从气体供给口向下流动通过气体分配板向下流动以降低温度的冷却气体在半导体晶片的表面上处于层流状态，或环形支架的表面。

2. 发明授权

US07699604B2 Manufacturing apparatus for semiconductor device and manufacturing method for semiconductor device 失效
标题翻译：半导体装置的制造装置及半导体装置的制造方法
公开(公告)号：US07699604B2
公开(公告)日：2010-04-20
申请号：US11828771
申请日：2007-07-26
申请人： Hideki Ito , Shinichi Mitani , Hironobu Hirata
发明人： Hideki Ito , Shinichi Mitani , Hironobu Hirata
IPC分类号： F27B5/16
CPC分类号： C23C16/46 , C23C16/52 , C30B25/105 , C30B25/16 , H01L21/67115
摘要： A manufacturing apparatus for a semiconductor includes a reaction chamber into which a wafer is introduced, gas supply unit for supplying a gas to the reaction chamber, gas exhaust unit for exhausting the gas from the reaction chamber, a holder for holding the wafer at an outer circumferential part of the wafer, a first heater for heating the wafer from below, a reflector provided above the holder, and a drive mechanism for driving the reflector.
摘要翻译：一种用于半导体的制造装置，包括：引入晶片的反应室，向反应室供给气体的气体供给单元，从反应室排出气体的排气单元，将晶片保持在外部的保持体晶片的圆周部分，用于从下方加热晶片的第一加热器，设置在保持器上方的反射器和用于驱动反射器的驱动机构。

3. 发明申请

US20080032036A1 MANUFACTURING APPARATUS FOR SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE 失效
标题翻译：用于半导体器件的制造装置和半导体器件的制造方法
公开(公告)号：US20080032036A1
公开(公告)日：2008-02-07
申请号：US11828771
申请日：2007-07-26
申请人： Hideki ITO , Shinichi Mitani , Hironobu Hirata
发明人： Hideki ITO , Shinichi Mitani , Hironobu Hirata
IPC分类号： C23C16/00 , B05C11/00 , C23C16/52
CPC分类号： C23C16/46 , C23C16/52 , C30B25/105 , C30B25/16 , H01L21/67115
摘要： A manufacturing apparatus for a semiconductor includes a reaction chamber into which a wafer is introduced, gas supply unit for supplying a gas to the reaction chamber, gas exhaust unit for exhausting the gas from the reaction chamber, a holder for holding the wafer at an outer circumferential part of the wafer, a first heater for heating the wafer from below, a reflector provided above the holder, and a drive mechanism for driving the reflector.
摘要翻译：一种用于半导体的制造装置，包括：引入晶片的反应室，向反应室供给气体的气体供给单元，从反应室排出气体的排气单元，将晶片保持在外部的保持体晶片的圆周部分，用于从下方加热晶片的第一加热器，设置在保持器上方的反射器和用于驱动反射器的驱动机构。

4. 发明申请

US20090068851A1 SUSCEPTOR, MANUFACTURING APPARATUS FOR SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于半导体器件的半导体器件的制造装置和半导体器件的制造方法
公开(公告)号：US20090068851A1
公开(公告)日：2009-03-12
申请号：US12207754
申请日：2008-09-10
申请人： Hironobu Hirata , Yoshikazu Moriyama , Masayoshi Yajima , Shinichi Mitani
发明人： Hironobu Hirata , Yoshikazu Moriyama , Masayoshi Yajima , Shinichi Mitani
IPC分类号： H01L21/31 , C23C14/50
CPC分类号： C23C16/4584 , C23C16/4585 , C23C16/46 , H01L21/68742 , H01L21/6875 , H01L21/68764
摘要： A susceptor of the present invention includes an inner susceptor having a diameter smaller than a diameter of a wafer w and a protruding part for placing the wafer w on a surface thereof, and an outer susceptor having an opening in the central portion thereof, a first step section for placing the inner susceptor so as to block the opening and a second step section provided above the first step section for placing the wafer.
摘要翻译：本发明的感受体包括直径小于晶片w的直径的内基座和用于将晶片w放置在其表面上的突出部分，以及在其中心部分具有开口的外基座，第一步骤部分，用于放置内部基座以阻挡开口;以及第二台阶部分，设置在第一台阶部分之上用于放置晶片。

5. 发明申请

US20070026148A1 Vapor phase deposition apparatus and vapor phase deposition method 审中-公开
标题翻译：气相沉积装置和气相沉积方法
公开(公告)号：US20070026148A1
公开(公告)日：2007-02-01
申请号：US11494674
申请日：2006-07-28
申请人： Hideki Arai , Hironobu Hirata , Yoshikazu Moriyama , Shinichi Mitani
发明人： Hideki Arai , Hironobu Hirata , Yoshikazu Moriyama , Shinichi Mitani
IPC分类号： C23C16/00
CPC分类号： C23C16/4584 , C23C16/4585 , C30B25/12 , C30B25/14
摘要： A vapor phase deposition apparatus includes a chamber, a support table which is accommodated in the chamber and supports a substrate in the chamber, a first passage which supplies a gas to form a film and is connected to the chamber, and a second passage which discharges the gas and is connected to the chamber, the support table is provided with a plurality of first projecting portions to constrain a substantially horizontal movement in the same direction as a substrate surface with respect to the substrate, and the substrate is supported on a surface to come in contact with a back face of the substrate.
摘要翻译：气相沉积设备包括：室，容纳在腔室中的支撑台，并且在腔室中支撑衬底;提供气体以形成膜并连接到腔室的第一通道;以及第二通道，气体并连接到腔室，支撑台设置有多个第一突出部分，以相对于衬底在与衬底表面相同的方向上约束基本上水平的运动，并且衬底被支撑在表面上与基板的背面接触。

6. 发明申请

US20090239362A1 APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的装置及制造半导体器件的方法
公开(公告)号：US20090239362A1
公开(公告)日：2009-09-24
申请号：US12406796
申请日：2009-03-18
申请人： Hironobu Hirata , Shinichi Mitani
发明人： Hironobu Hirata , Shinichi Mitani
IPC分类号： H01L21/20 , B05C11/00 , B05C1/00
CPC分类号： H01L29/7813 , C23C16/45591 , C23C16/4584 , C23C16/46 , C30B25/14 , C30B29/06 , H01L21/67109 , H01L21/67115 , H01L29/0634
摘要： An apparatus for manufacturing a semiconductor device, including in a reaction chamber: a rotor provided with a holding member holding a wafer thereon and a heater heating the wafer therein; a rotation drive mechanism; a gas supply mechanism; a gas exhaust mechanism; and a rectifying plate for rectifying the supplied process gas to supply the rectified gas, and including: an annular rectifying fin mounted on a lower portion of the plate, having a larger lower end inside diameter than an upper end inside diameter thereof and downward rectifying gas exhausted in an outer circumferential direction from above the wafer; and a distance control mechanism controlling a vertical distance between the plate and the wafer and a vertical distance between the fin and the rotor top face to be predetermined distances, respectively, thereby providing higher film formation efficiency.
摘要翻译：一种用于制造半导体器件的装置，包括在反应室中：设置有保持晶片的保持构件的转子和在其中加热晶片的加热器; 旋转驱动机构; 供气机构; 排气机构; 以及整流板，用于对所提供的处理气体进行整流以供应整流气体，并且包括：安装在板的下部的环形整流翅片，其具有比其上端内径更大的下端内径和向下的整流气体从晶片上方沿外周方向排出; 以及控制板和晶片之间的垂直距离和翅片与转子顶面之间的垂直距离的距离控制机构分别为预定距离，从而提供更高的成膜效率。

7. 发明授权

US06485573B2 Apparatus for reduced-pressure epitaxial growth and method of controlling the apparatus 有权
标题翻译：减压外延生长装置及其控制方法
公开(公告)号：US06485573B2
公开(公告)日：2002-11-26
申请号：US09855654
申请日：2001-05-16
申请人： Katsuyuki Iwata , Tadashi Ohashi , Shyuji Tobashi , Shinichi Mitani , Hideki Arai , Hideki Ito
发明人： Katsuyuki Iwata , Tadashi Ohashi , Shyuji Tobashi , Shinichi Mitani , Hideki Arai , Hideki Ito
IPC分类号： C23C1600
CPC分类号： C23C16/45521 , C23C16/45557 , C23C16/4584 , C23C16/52 , C30B25/12 , C30B25/14
摘要： An apparatus for reduced-pressure gaseous phase epitaxial growth by suppressing contamination upon the machine parts constituting the rotary mechanical portion and suppressing contamination upon the semiconductor wafer by maintaining the pressure in the rotary mechanical portion to lie within a particular range, and a method of controlling the above apparatus. The apparatus comprises a purging gas introduction pipe 6 for purging the interior of the rotary mechanical portion, a purging gas exhaust pipe 7 for exhausting the gas introduced through the purging gas introduction pipe, a pressure adjusting valve 41 provided in the purging gas exhaust pipe, a pressure gauge 21 for detecting the pressure in the rotary mechanical portion, and an arithmetic/control unit 31 for executing an arithmetic operation based upon the detected pressure and for controlling the opening degree of the pressure adjusting valve 41 provided in the purging gas exhaust pipe, so that the pressure in the rotary mechanical portion assumes a proper value.
摘要翻译：一种通过抑制构成旋转机械部分的机器部件上的污染并通过将旋转机械部分中的压力维持在特定范围内来抑制半导体晶片上的污染物的减压气相外延生长装置，以及控制方法上述装置。该装置包括用于清洗旋转机械部分内部的净化气体引入管6，用于排出通过吹扫气体导入管引入的气体的净化气体排出管7，设置在净化气体排出管中的压力调节阀41，用于检测旋转机械部分中的压力的压力计21以及用于基于检测到的压力执行算术运算并且用于控制设置在净化气体排出管中的压力调节阀41的开度的运算/控制单元31 ，使得旋转机械部分中的压力呈现适当的值。

8. 发明授权

US07837794B2 Vapor phase growth apparatus and vapor phase growth method 有权
标题翻译：气相生长装置和气相生长法
公开(公告)号：US07837794B2
公开(公告)日：2010-11-23
申请号：US12053657
申请日：2008-03-24
申请人： Hideki Ito , Shinichi Mitani
发明人： Hideki Ito , Shinichi Mitani
IPC分类号： C30B21/02
CPC分类号： C30B25/10 , C23C16/4586 , C30B35/00 , Y10S117/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A vapor phase growth apparatus and a vapor phase growth method improve the uniformity of film formed are provided. The vapor phase growth apparatus includes a chamber, a rotatable holder having a susceptor, an internal heater and an external heater which are arranged in the holder and heat the wafer from the bottom surface, an gas-pipe which is arranged to face the internal heater and sprays a cooling gas, and a temperature measuring unit which is arranged outside the chamber and measures the surface temperature of the wafer. In this manner, a position of a singular point of temperature which is an overheated portion generated on the wafer can be recognized. The singular point of temperature is locally cooled to make it possible to improve the uniformity of a temperature distribution in plane of the wafer.
摘要翻译：提供了一种提高膜形成均匀性的气相生长装置和气相生长方法。气相生长装置包括：室，具有基座的可旋转保持器，内部加热器和外部加热器，其布置在保持器中并从底表面加热晶片;气体管，其布置成面对内部加热器并喷射冷却气体，以及温度测量单元，其布置在室外并测量晶片的表面温度。以这种方式，可以识别在晶片上产生的过热部分的单个温度点的位置。温度的单个点被局部冷却，从而可以提高晶片的平面内的温度分布的均匀性。

9. 发明授权

US06461428B2 Method and apparatus for controlling rise and fall of temperature in semiconductor substrates 有权
标题翻译：用于控制半导体衬底温度升高和降低的方法和装置
公开(公告)号：US06461428B2
公开(公告)日：2002-10-08
申请号：US09729669
申请日：2000-12-05
申请人： Shyuji Tobashi , Tadashi Ohashi , Katsuyuki Iwata , Hiroyuki Saito , Shinichi Mitani , Takaaki Honda , Hideki Arai , Yoshitaka Murofushi , Kunihiko Suzuki , Hidenori Takahashi , Hideki Ito , Hirofumi Katsumata
发明人： Shyuji Tobashi , Tadashi Ohashi , Katsuyuki Iwata , Hiroyuki Saito , Shinichi Mitani , Takaaki Honda , Hideki Arai , Yoshitaka Murofushi , Kunihiko Suzuki , Hidenori Takahashi , Hideki Ito , Hirofumi Katsumata
IPC分类号： C30B2514
CPC分类号： C23C16/45587 , C23C16/4584 , C23C16/46 , C23C16/52 , C30B25/12 , C30B25/16 , C30B31/14 , C30B31/18
摘要： A method of controlling the temperature of a semiconductor substrate for prevention of any cracks from being formed in the semiconductor substrate event though semiconductors having different temperature rise/fall characteristics are fed into a reactor in which each semiconductor substrates is subjected to an oxidation, diffusion, or a chemical vapor deposition process. The temperatures are measured at various points in the semiconductor substrates in the heated reactor; the temperature rise/fall characteristic thereof is determined by computing the rate of temperature rise and the in-plane temperature distribution out of the measured values; a temperature control program adaptable for said temperature rise/fall characteristic is automatically selected out of a plurality of temperature control programs written in advance; the semiconductor substrate is controlled on the basis of the selected temperature control program. Also is provided a susceptor to reduce contamination of the semiconductor substrate with the metal impurities containing gas flow at the time of forming a thin film on the semiconductor substrate, and a gas phase thin film growth apparatus using such susceptor. The susceptor is formed with a gas flow deflector jutting downwardly from the peripheral portion of the reverse side of the susceptor to deflect the gas flow moving upon rotation along the reverse side of the susceptor from the center thereof to the peripheral portion thereof.
摘要翻译：控制半导体基板的温度的方法，即使在具有不同温度上升/下降特性的半导体的半导体衬底的事件中，也可以将半导体衬底的各个半导体衬底进行氧化，扩散，或化学气相沉积工艺。在加热的反应器中的半导体衬底中的各个点测量温度; 其温度上升/下降特性通过计算测量值中的温度升高速率和面内温度分布来确定; 可以从预先书写的多个温度控制程序中自动选择适合于所述温度上升/下降特性的温度控制程序; 基于所选择的温度控制程序来控制半导体衬底。还提供了一种感受器，用于在半导体衬底上形成薄膜时减少含有气体流的金属杂质的半导体衬底的污染，以及使用这种感受体的气相薄膜生长装置。基座形成有从基座的相反侧的周边部分向下突出的气流导流器，以使沿基座的相反侧旋转的气流从其中心偏转到其周边部分。

10. 发明授权

US08921212B2 Manufacturing apparatus and method for semiconductor device 有权
标题翻译：半导体器件的制造装置和方法
公开(公告)号：US08921212B2
公开(公告)日：2014-12-30
申请号：US13685870
申请日：2012-11-27
申请人： Kunihiko Suzuki , Shinichi Mitani
发明人： Kunihiko Suzuki , Shinichi Mitani
IPC分类号： H01L21/02 , C23C16/458 , C30B25/10 , H01L21/67 , H01L21/687
CPC分类号： H01L21/02639 , C23C16/4584 , C23C16/4586 , C30B25/10 , H01L21/67109 , H01L21/68792
摘要： A semiconductor device manufacturing apparatus includes a chamber in which a wafer is loaded; a first gas supply unit for supplying a process gas into the chamber; a gas exhaust unit for exhausting a gas from the chamber; a wafer support member on which the wafer is placed; a ring on which the wafer support member is placed; a rotation drive control unit connected to the ring to rotate the wafer; a heater disposed in the ring and comprising a heater element for heating the wafer to a predetermined temperature and including an SiC layer on at least a surface, and a heater electrode portion molded integrally with a heater element and including an SiC layer on at least a surface; and a second gas supply unit for supplying an SiC source gas into the ring.
摘要翻译：半导体器件制造装置包括其中装载晶片的腔室; 用于将处理气体供应到所述室中的第一气体供应单元; 用于从所述室排出气体的排气单元; 其上放置晶片的晶片支撑构件; 其上放置有晶片支撑构件的环; 旋转驱动控制单元，连接到所述环以旋转晶片; 设置在所述环中并且包括用于将晶片加热到预定温度并且在至少一个表面上包括SiC层的加热器元件的加热器和与加热器元件整体模制并且包括至少一个SiC层的SiC层的加热器电极部分表面; 以及用于将SiC源气体供给到所述环中的第二气体供给单元。

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