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1. 发明申请

US20070026148A1 Vapor phase deposition apparatus and vapor phase deposition method 审中-公开
标题翻译：气相沉积装置和气相沉积方法
公开(公告)号：US20070026148A1
公开(公告)日：2007-02-01
申请号：US11494674
申请日：2006-07-28
申请人： Hideki Arai , Hironobu Hirata , Yoshikazu Moriyama , Shinichi Mitani
发明人： Hideki Arai , Hironobu Hirata , Yoshikazu Moriyama , Shinichi Mitani
IPC分类号： C23C16/00
CPC分类号： C23C16/4584 , C23C16/4585 , C30B25/12 , C30B25/14
摘要： A vapor phase deposition apparatus includes a chamber, a support table which is accommodated in the chamber and supports a substrate in the chamber, a first passage which supplies a gas to form a film and is connected to the chamber, and a second passage which discharges the gas and is connected to the chamber, the support table is provided with a plurality of first projecting portions to constrain a substantially horizontal movement in the same direction as a substrate surface with respect to the substrate, and the substrate is supported on a surface to come in contact with a back face of the substrate.
摘要翻译：气相沉积设备包括：室，容纳在腔室中的支撑台，并且在腔室中支撑衬底;提供气体以形成膜并连接到腔室的第一通道;以及第二通道，气体并连接到腔室，支撑台设置有多个第一突出部分，以相对于衬底在与衬底表面相同的方向上约束基本上水平的运动，并且衬底被支撑在表面上与基板的背面接触。

2. 发明申请

US20090068851A1 SUSCEPTOR, MANUFACTURING APPARATUS FOR SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于半导体器件的半导体器件的制造装置和半导体器件的制造方法
公开(公告)号：US20090068851A1
公开(公告)日：2009-03-12
申请号：US12207754
申请日：2008-09-10
申请人： Hironobu Hirata , Yoshikazu Moriyama , Masayoshi Yajima , Shinichi Mitani
发明人： Hironobu Hirata , Yoshikazu Moriyama , Masayoshi Yajima , Shinichi Mitani
IPC分类号： H01L21/31 , C23C14/50
CPC分类号： C23C16/4584 , C23C16/4585 , C23C16/46 , H01L21/68742 , H01L21/6875 , H01L21/68764
摘要： A susceptor of the present invention includes an inner susceptor having a diameter smaller than a diameter of a wafer w and a protruding part for placing the wafer w on a surface thereof, and an outer susceptor having an opening in the central portion thereof, a first step section for placing the inner susceptor so as to block the opening and a second step section provided above the first step section for placing the wafer.
摘要翻译：本发明的感受体包括直径小于晶片w的直径的内基座和用于将晶片w放置在其表面上的突出部分，以及在其中心部分具有开口的外基座，第一步骤部分，用于放置内部基座以阻挡开口;以及第二台阶部分，设置在第一台阶部分之上用于放置晶片。

3. 发明申请

US20100075509A1 MANUFACTURING METHOD AND MANUFACTURING APPARATUS FOR SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件的制造方法和制造设备
公开(公告)号：US20100075509A1
公开(公告)日：2010-03-25
申请号：US12563602
申请日：2009-09-21
申请人： Hironobu Hirata , Masayoshi Yajima , Yoshikazu Moriyama
发明人： Hironobu Hirata , Masayoshi Yajima , Yoshikazu Moriyama
IPC分类号： H01L21/316 , B05C11/00
CPC分类号： H01L21/02299 , C23C16/46 , H01L21/02164 , H01L21/02236 , H01L21/67109 , H01L21/67751
摘要： A manufacturing method for a semiconductor device, including: loading a wafer into a reaction chamber; placing the wafer on a push-up shaft moved up; preheating the wafer under controlling an in-plane temperature distribution of the wafer to be a recess state under a state of placing the wafer on the push-up shaft moved up; lowering the push-up shaft with the wafer kept in the recess state to hold the wafer on a wafer holding member; heating the wafer to a predetermined temperature; rotating the wafer; and supplying a process gas onto the wafer.
摘要翻译：一种半导体器件的制造方法，包括：将晶片装载到反应室中; 将晶片放置在上推轴上; 在将晶片放置在上推轴上的状态下，将晶片的面内温度分布控制为凹陷状态来预热晶片; 在晶片保持处于凹状状态的同时降低上推轴将晶片保持在晶片保持构件上; 将晶片加热至预定温度; 旋转晶片; 并将工艺气体供应到晶片上。

4. 发明授权

US08632634B2 Coating apparatus and coating method 有权
标题翻译：涂布设备和涂布方法
公开(公告)号：US08632634B2
公开(公告)日：2014-01-21
申请号：US12508012
申请日：2009-07-23
申请人： Yoshikazu Moriyama , Kunihiko Suzuki , Hironobu Hirata
发明人： Yoshikazu Moriyama , Kunihiko Suzuki , Hironobu Hirata
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45572 , C23C16/4412 , C23C16/45565 , C23C16/45574 , C23C16/46 , C30B25/14 , C30B29/06
摘要： In a coating apparatus, a distributor plate 104 is disposed upstream of a silicon wafer 101 relative to the direction of flow of reactive gas. The distributor plate 104 has therein first through-holes 104a and second through-holes 104b arranged so as not to meet the first through-holes 104a. The reactive gas passes through the first through-holes 104a and flows down toward the silicon wafer 101. Further, a cooling gas passes through the second through-holes 104b.
摘要翻译：在涂布装置中，分配器板104相对于反应气体的流动方向设置在硅晶片101的上游。分配板104在其中具有布置成不与第一通孔104a相交的第一通孔104a和第二通孔104b。反应气体通过第一通孔104a并朝向硅晶片101向下流动。此外，冷却气体通过第二通孔104b。

5. 发明授权

US08460470B2 Vapor phase deposition apparatus and support table 有权
标题翻译：气相沉积装置和支撑台
公开(公告)号：US08460470B2
公开(公告)日：2013-06-11
申请号：US13297483
申请日：2011-11-16
申请人： Hironobu Hirata , Akira Jyogo , Yoshikazu Moriyama
发明人： Hironobu Hirata , Akira Jyogo , Yoshikazu Moriyama
IPC分类号： C23C16/00
CPC分类号： C23C16/481 , C23C16/4581 , C23C16/4585 , C30B25/10 , C30B29/06 , C30B35/00
摘要： A vapor phase deposition apparatus includes a chamber, a support table arranged in the chamber, and having a first support unit which is in contact with a back side surface of a substrate and on which the substrate is placed and a second support unit which is connected to the first support unit to support the first support unit, a heat source arranged at a position having a distance from a back side surface of the substrate, the distance being larger than a distance between back side surface of the support table and the heat source, and which heats the substrate, a first flow path configured to supply a gas to form a film into the chamber, and a second flow path configured to exhaust the gas from the chamber.
摘要翻译：气相沉积设备包括一个室，一个布置在室中的支撑台，并具有一个第一支撑单元，该第一支撑单元与一个基板的背面接触并且其上放置该基板，一个第二支撑单元被连接所述第一支撑单元支撑所述第一支撑单元，所述热源布置在距离所述基板的背侧表面的距离的位置处，所述距离大于所述支撑台的背侧表面与所述热源之间的距离并且其加热所述基板，构造成供应气体以在所述室中形成膜的第一流动路径和被配置为从所述室排出气体的第二流动路径。

6. 发明申请

US20120055406A1 Vapor Phase Deposition Apparatus and Support Table 有权
标题翻译：气相沉积装置和支撑台
公开(公告)号：US20120055406A1
公开(公告)日：2012-03-08
申请号：US13297483
申请日：2011-11-16
申请人： Hironobu Hirata , Akira Jyogo , Yoshikazu Moriyama
发明人： Hironobu Hirata , Akira Jyogo , Yoshikazu Moriyama
IPC分类号： C23C16/458
CPC分类号： C23C16/481 , C23C16/4581 , C23C16/4585 , C30B25/10 , C30B29/06 , C30B35/00
摘要： A vapor phase deposition apparatus includes a chamber, a support table arranged in the chamber, and having a first support unit which is in contact with a back side surface of a substrate and on which the substrate is placed and a second support unit which is connected to the first support unit to support the first support unit, a heat source arranged at a position having a distance from a back side surface of the substrate, the distance being larger than a distance between back side surface of the support table and the heat source, and which heats the substrate, a first flow path configured to supply a gas to form a film into the chamber, and a second flow path configured to exhaust the gas from the chamber.
摘要翻译：气相沉积设备包括一个室，一个布置在室中的支撑台，并具有一个第一支撑单元，该第一支撑单元与一个基板的背面接触并且其上放置该基板，一个第二支撑单元被连接所述第一支撑单元支撑所述第一支撑单元，所述热源布置在距离所述基板的背侧表面的距离的位置处，所述距离大于所述支撑台的背侧表面与所述热源之间的距离并且其加热所述基板，构造成供应气体以在所述室中形成膜的第一流动路径和被配置为从所述室排出气体的第二流动路径。

7. 发明申请

US20070204796A1 Vapor phase deposition apparatus and support table 审中-公开
标题翻译：气相沉积装置和支撑台
公开(公告)号：US20070204796A1
公开(公告)日：2007-09-06
申请号：US11706971
申请日：2007-02-16
申请人： Hironobu Hirata , Akira Jyogo , Yoshikazu Moriyama
发明人： Hironobu Hirata , Akira Jyogo , Yoshikazu Moriyama
IPC分类号： C23C16/00
CPC分类号： C23C16/481 , C23C16/4581 , C23C16/4585 , C30B25/10 , C30B29/06 , C30B35/00
摘要： A vapor phase deposition apparatus includes a chamber, a support table arranged in the chamber, and having a first support unit which is in contact with a back side surface of a substrate and on which the substrate is placed and a second support unit which is connected to the first support unit to support the first support unit, a heat source arranged at a position having a distance from a back side surface of the substrate, the distance being larger than a distance between back side surface of the support table and the heat source, and which heats the substrate, a first flow path configured to supply a gas to form a film into the chamber, and a second flow path configured to exhaust the gas from the chamber.
摘要翻译：气相沉积设备包括一个室，一个布置在室中的支撑台，并具有一个第一支撑单元，该第一支撑单元与一个基板的背面接触并且其上放置该基板，一个第二支撑单元被连接所述第一支撑单元支撑所述第一支撑单元，所述热源布置在距离所述基板的背侧表面的距离的位置处，所述距离大于所述支撑台的背侧表面与所述热源之间的距离并且其加热所述基板，构造成供应气体以在所述室中形成膜的第一流动路径和被配置为从所述室排出气体的第二流动路径。

8. 发明申请

US20080308036A1 VAPOR-PHASE GROWTH APPARATUS AND VAPOR-PHASE GROWTH METHOD 审中-公开
标题翻译：蒸汽相生长装置和蒸汽相生长方法
公开(公告)号：US20080308036A1
公开(公告)日：2008-12-18
申请号：US12137843
申请日：2008-06-12
申请人： Hideki ITO , Hironobu Hirata , Shinichi Mitani
发明人： Hideki ITO , Hironobu Hirata , Shinichi Mitani
IPC分类号： C30B35/00 , C30B23/02
CPC分类号： C30B35/00 , C23C16/45504 , C23C16/45565 , C30B25/10
摘要： There is provided a vapor-phase growth apparatus which shortens a temperature decrease time of a wafer substrate after an epitaxial growth step to make it easy to realize a high throughput in film formation of an epitaxial layer. The vapor-phase growth apparatus includes a gas supply port formed in a top portion of a reactor, a gas distribution plate arranged in the reactor, a discharge port formed in a bottom portion of the reactor, an annular holder on which a semiconductor wafer is placed to face the gas distribution plate. A separation distance between the gas distribution plate and the annular holder is set such that a cooling gas which flows downward from the gas supply port through the gas distribution plate to decrease the temperature is in a laminar flow state on a surface of the semiconductor wafer or a surface of the annular holder.
摘要翻译：提供了一种气相生长装置，其在外延生长步骤之后缩短晶片衬底的温度降低时间，以使得容易实现外延层的成膜中的高通量。气相生长装置包括形成在反应器的顶部的气体供给口，设置在反应器中的气体分配板，形成在反应器底部的排出口，半导体晶片放置在面对气体分配板。气体分配板和环形保持器之间的分隔距离被设定为使得从气体供给口向下流动通过气体分配板向下流动以降低温度的冷却气体在半导体晶片的表面上处于层流状态，或环形支架的表面。

9. 发明授权

US07699604B2 Manufacturing apparatus for semiconductor device and manufacturing method for semiconductor device 失效
标题翻译：半导体装置的制造装置及半导体装置的制造方法
公开(公告)号：US07699604B2
公开(公告)日：2010-04-20
申请号：US11828771
申请日：2007-07-26
申请人： Hideki Ito , Shinichi Mitani , Hironobu Hirata
发明人： Hideki Ito , Shinichi Mitani , Hironobu Hirata
IPC分类号： F27B5/16
CPC分类号： C23C16/46 , C23C16/52 , C30B25/105 , C30B25/16 , H01L21/67115
摘要： A manufacturing apparatus for a semiconductor includes a reaction chamber into which a wafer is introduced, gas supply unit for supplying a gas to the reaction chamber, gas exhaust unit for exhausting the gas from the reaction chamber, a holder for holding the wafer at an outer circumferential part of the wafer, a first heater for heating the wafer from below, a reflector provided above the holder, and a drive mechanism for driving the reflector.
摘要翻译：一种用于半导体的制造装置，包括：引入晶片的反应室，向反应室供给气体的气体供给单元，从反应室排出气体的排气单元，将晶片保持在外部的保持体晶片的圆周部分，用于从下方加热晶片的第一加热器，设置在保持器上方的反射器和用于驱动反射器的驱动机构。

10. 发明申请

US20090239362A1 APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的装置及制造半导体器件的方法
公开(公告)号：US20090239362A1
公开(公告)日：2009-09-24
申请号：US12406796
申请日：2009-03-18
申请人： Hironobu Hirata , Shinichi Mitani
发明人： Hironobu Hirata , Shinichi Mitani
IPC分类号： H01L21/20 , B05C11/00 , B05C1/00
CPC分类号： H01L29/7813 , C23C16/45591 , C23C16/4584 , C23C16/46 , C30B25/14 , C30B29/06 , H01L21/67109 , H01L21/67115 , H01L29/0634
摘要： An apparatus for manufacturing a semiconductor device, including in a reaction chamber: a rotor provided with a holding member holding a wafer thereon and a heater heating the wafer therein; a rotation drive mechanism; a gas supply mechanism; a gas exhaust mechanism; and a rectifying plate for rectifying the supplied process gas to supply the rectified gas, and including: an annular rectifying fin mounted on a lower portion of the plate, having a larger lower end inside diameter than an upper end inside diameter thereof and downward rectifying gas exhausted in an outer circumferential direction from above the wafer; and a distance control mechanism controlling a vertical distance between the plate and the wafer and a vertical distance between the fin and the rotor top face to be predetermined distances, respectively, thereby providing higher film formation efficiency.
摘要翻译：一种用于制造半导体器件的装置，包括在反应室中：设置有保持晶片的保持构件的转子和在其中加热晶片的加热器; 旋转驱动机构; 供气机构; 排气机构; 以及整流板，用于对所提供的处理气体进行整流以供应整流气体，并且包括：安装在板的下部的环形整流翅片，其具有比其上端内径更大的下端内径和向下的整流气体从晶片上方沿外周方向排出; 以及控制板和晶片之间的垂直距离和翅片与转子顶面之间的垂直距离的距离控制机构分别为预定距离，从而提供更高的成膜效率。

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