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1. 发明授权

US07699604B2 Manufacturing apparatus for semiconductor device and manufacturing method for semiconductor device 失效
标题翻译：半导体装置的制造装置及半导体装置的制造方法
公开(公告)号：US07699604B2
公开(公告)日：2010-04-20
申请号：US11828771
申请日：2007-07-26
申请人： Hideki Ito , Shinichi Mitani , Hironobu Hirata
发明人： Hideki Ito , Shinichi Mitani , Hironobu Hirata
IPC分类号： F27B5/16
CPC分类号： C23C16/46 , C23C16/52 , C30B25/105 , C30B25/16 , H01L21/67115
摘要： A manufacturing apparatus for a semiconductor includes a reaction chamber into which a wafer is introduced, gas supply unit for supplying a gas to the reaction chamber, gas exhaust unit for exhausting the gas from the reaction chamber, a holder for holding the wafer at an outer circumferential part of the wafer, a first heater for heating the wafer from below, a reflector provided above the holder, and a drive mechanism for driving the reflector.
摘要翻译：一种用于半导体的制造装置，包括：引入晶片的反应室，向反应室供给气体的气体供给单元，从反应室排出气体的排气单元，将晶片保持在外部的保持体晶片的圆周部分，用于从下方加热晶片的第一加热器，设置在保持器上方的反射器和用于驱动反射器的驱动机构。

2. 发明授权

US06485573B2 Apparatus for reduced-pressure epitaxial growth and method of controlling the apparatus 有权
标题翻译：减压外延生长装置及其控制方法
公开(公告)号：US06485573B2
公开(公告)日：2002-11-26
申请号：US09855654
申请日：2001-05-16
申请人： Katsuyuki Iwata , Tadashi Ohashi , Shyuji Tobashi , Shinichi Mitani , Hideki Arai , Hideki Ito
发明人： Katsuyuki Iwata , Tadashi Ohashi , Shyuji Tobashi , Shinichi Mitani , Hideki Arai , Hideki Ito
IPC分类号： C23C1600
CPC分类号： C23C16/45521 , C23C16/45557 , C23C16/4584 , C23C16/52 , C30B25/12 , C30B25/14
摘要： An apparatus for reduced-pressure gaseous phase epitaxial growth by suppressing contamination upon the machine parts constituting the rotary mechanical portion and suppressing contamination upon the semiconductor wafer by maintaining the pressure in the rotary mechanical portion to lie within a particular range, and a method of controlling the above apparatus. The apparatus comprises a purging gas introduction pipe 6 for purging the interior of the rotary mechanical portion, a purging gas exhaust pipe 7 for exhausting the gas introduced through the purging gas introduction pipe, a pressure adjusting valve 41 provided in the purging gas exhaust pipe, a pressure gauge 21 for detecting the pressure in the rotary mechanical portion, and an arithmetic/control unit 31 for executing an arithmetic operation based upon the detected pressure and for controlling the opening degree of the pressure adjusting valve 41 provided in the purging gas exhaust pipe, so that the pressure in the rotary mechanical portion assumes a proper value.
摘要翻译：一种通过抑制构成旋转机械部分的机器部件上的污染并通过将旋转机械部分中的压力维持在特定范围内来抑制半导体晶片上的污染物的减压气相外延生长装置，以及控制方法上述装置。该装置包括用于清洗旋转机械部分内部的净化气体引入管6，用于排出通过吹扫气体导入管引入的气体的净化气体排出管7，设置在净化气体排出管中的压力调节阀41，用于检测旋转机械部分中的压力的压力计21以及用于基于检测到的压力执行算术运算并且用于控制设置在净化气体排出管中的压力调节阀41的开度的运算/控制单元31 ，使得旋转机械部分中的压力呈现适当的值。

3. 发明授权

US07837794B2 Vapor phase growth apparatus and vapor phase growth method 有权
标题翻译：气相生长装置和气相生长法
公开(公告)号：US07837794B2
公开(公告)日：2010-11-23
申请号：US12053657
申请日：2008-03-24
申请人： Hideki Ito , Shinichi Mitani
发明人： Hideki Ito , Shinichi Mitani
IPC分类号： C30B21/02
CPC分类号： C30B25/10 , C23C16/4586 , C30B35/00 , Y10S117/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A vapor phase growth apparatus and a vapor phase growth method improve the uniformity of film formed are provided. The vapor phase growth apparatus includes a chamber, a rotatable holder having a susceptor, an internal heater and an external heater which are arranged in the holder and heat the wafer from the bottom surface, an gas-pipe which is arranged to face the internal heater and sprays a cooling gas, and a temperature measuring unit which is arranged outside the chamber and measures the surface temperature of the wafer. In this manner, a position of a singular point of temperature which is an overheated portion generated on the wafer can be recognized. The singular point of temperature is locally cooled to make it possible to improve the uniformity of a temperature distribution in plane of the wafer.
摘要翻译：提供了一种提高膜形成均匀性的气相生长装置和气相生长方法。气相生长装置包括：室，具有基座的可旋转保持器，内部加热器和外部加热器，其布置在保持器中并从底表面加热晶片;气体管，其布置成面对内部加热器并喷射冷却气体，以及温度测量单元，其布置在室外并测量晶片的表面温度。以这种方式，可以识别在晶片上产生的过热部分的单个温度点的位置。温度的单个点被局部冷却，从而可以提高晶片的平面内的温度分布的均匀性。

4. 发明授权

US06461428B2 Method and apparatus for controlling rise and fall of temperature in semiconductor substrates 有权
标题翻译：用于控制半导体衬底温度升高和降低的方法和装置
公开(公告)号：US06461428B2
公开(公告)日：2002-10-08
申请号：US09729669
申请日：2000-12-05
申请人： Shyuji Tobashi , Tadashi Ohashi , Katsuyuki Iwata , Hiroyuki Saito , Shinichi Mitani , Takaaki Honda , Hideki Arai , Yoshitaka Murofushi , Kunihiko Suzuki , Hidenori Takahashi , Hideki Ito , Hirofumi Katsumata
发明人： Shyuji Tobashi , Tadashi Ohashi , Katsuyuki Iwata , Hiroyuki Saito , Shinichi Mitani , Takaaki Honda , Hideki Arai , Yoshitaka Murofushi , Kunihiko Suzuki , Hidenori Takahashi , Hideki Ito , Hirofumi Katsumata
IPC分类号： C30B2514
CPC分类号： C23C16/45587 , C23C16/4584 , C23C16/46 , C23C16/52 , C30B25/12 , C30B25/16 , C30B31/14 , C30B31/18
摘要： A method of controlling the temperature of a semiconductor substrate for prevention of any cracks from being formed in the semiconductor substrate event though semiconductors having different temperature rise/fall characteristics are fed into a reactor in which each semiconductor substrates is subjected to an oxidation, diffusion, or a chemical vapor deposition process. The temperatures are measured at various points in the semiconductor substrates in the heated reactor; the temperature rise/fall characteristic thereof is determined by computing the rate of temperature rise and the in-plane temperature distribution out of the measured values; a temperature control program adaptable for said temperature rise/fall characteristic is automatically selected out of a plurality of temperature control programs written in advance; the semiconductor substrate is controlled on the basis of the selected temperature control program. Also is provided a susceptor to reduce contamination of the semiconductor substrate with the metal impurities containing gas flow at the time of forming a thin film on the semiconductor substrate, and a gas phase thin film growth apparatus using such susceptor. The susceptor is formed with a gas flow deflector jutting downwardly from the peripheral portion of the reverse side of the susceptor to deflect the gas flow moving upon rotation along the reverse side of the susceptor from the center thereof to the peripheral portion thereof.
摘要翻译：控制半导体基板的温度的方法，即使在具有不同温度上升/下降特性的半导体的半导体衬底的事件中，也可以将半导体衬底的各个半导体衬底进行氧化，扩散，或化学气相沉积工艺。在加热的反应器中的半导体衬底中的各个点测量温度; 其温度上升/下降特性通过计算测量值中的温度升高速率和面内温度分布来确定; 可以从预先书写的多个温度控制程序中自动选择适合于所述温度上升/下降特性的温度控制程序; 基于所选择的温度控制程序来控制半导体衬底。还提供了一种感受器，用于在半导体衬底上形成薄膜时减少含有气体流的金属杂质的半导体衬底的污染，以及使用这种感受体的气相薄膜生长装置。基座形成有从基座的相反侧的周边部分向下突出的气流导流器，以使沿基座的相反侧旋转的气流从其中心偏转到其周边部分。

5. 发明授权

US09273412B2 Film-forming apparatus and film-forming method 有权
公开(公告)号：US09273412B2
公开(公告)日：2016-03-01
申请号：US13527198
申请日：2012-06-19
申请人： Kunihiko Suzuki , Hideki Ito , Naohisa Ikeya , Hidekazu Tsuchida , Isaho Kamata , Masahiko Ito , Masami Naito , Hiroaki Fujibayashi , Ayumu Adachi , Koichi Nishikawa
发明人： Kunihiko Suzuki , Hideki Ito , Naohisa Ikeya , Hidekazu Tsuchida , Isaho Kamata , Masahiko Ito , Masami Naito , Hiroaki Fujibayashi , Ayumu Adachi , Koichi Nishikawa
IPC分类号： C30B25/10
摘要： A film-forming apparatus and method comprising a film-forming chamber for supplying a reaction gas into, a cylindrical shaped liner provided between an inner wall of the film-forming chamber and a space for performing a film-forming process, a main-heater for heating a substrate placed inside the liner, from the bottom side, a sub-heater cluster provided between the liner and the inner wall, for heating the substrate from the top side, wherein the main-heater and the sub-heater cluster are resistive heaters, wherein the sub-heater cluster has a first sub-heater provided at the closest position to the substrate, and a second sub-heater provided above the first sub-heater, wherein the first sub-heater heats the substrate in combination with the main-heater, the second sub-heater heats the liner at a lower output than the first sub-heater, wherein each temperature of the main-heater, the first sub-heater, and the second sub-heater is individually controlled.

6. 发明授权

US09091889B2 Liquid crystal display device having columnar spacers 有权
标题翻译：具有柱状间隔物的液晶显示装置
公开(公告)号：US09091889B2
公开(公告)日：2015-07-28
申请号：US13288052
申请日：2011-11-03
申请人： Hideki Ito , Shinichi Nishida , Takahiko Watanabe , Atsushi Yamamoto
发明人： Hideki Ito , Shinichi Nishida , Takahiko Watanabe , Atsushi Yamamoto
IPC分类号： G02F1/1339 , G02F1/1362
CPC分类号： G02F1/13394 , G02F1/136213
摘要： To provide a structure of an electrically stable step film of a columnar spacer, which can be formed in a region of a storage capacitor without increasing the number of steps. A liquid crystal display device of the present invention further includes, in all the pixels, step films of a same area formed with a semiconductor layer within a storage capacitor forming part. The pixels includes a kind in which the columnar spacer is provided at a position abutting against a step film forming part and a kind in which the columnar spacer is provided at a position away from the step film forming part.
摘要翻译：提供可以在不增加步数的情况下形成在存储电容器的区域中的柱状间隔物的电稳定的步进膜的结构。本发明的液晶显示装置在所有像素中还包括在存储电容器形成部分内形成有半导体层的相同区域的步进膜。像素包括一种类型，其中柱状间隔物设置在与台阶膜形成部分抵接的位置处，并且其中柱状间隔物设置在远离阶梯膜形成部分的位置。

7. 发明授权

US08849024B2 Image processing device and medium storing image processing program 有权
标题翻译：图像处理装置和介质存储图像处理程序
公开(公告)号：US08849024B2
公开(公告)日：2014-09-30
申请号：US12566225
申请日：2009-09-24
申请人： Tomotaka Shinoda , Toshihiro Mitaka , Hideki Ito , Satoshi Mori , Sato Tsutomu , Satoshi Iyama
发明人： Tomotaka Shinoda , Toshihiro Mitaka , Hideki Ito , Satoshi Mori , Sato Tsutomu , Satoshi Iyama
IPC分类号： G06K9/00 , G06K9/40 , G06K9/46
CPC分类号： G06K9/0014 , G06K9/4652 , H04N1/6075
摘要： An image processing device can explicitly distinguish cells to be observed from cells other than those to be observed with a simple configuration. To this end, the image processing device includes a color information obtaining part obtaining at least hue from color information of each pixel of a color image, a detecting part detecting a mode value of the hue on a color space, a range setting part setting a predetermined range on the color space including the mode value of the hue detected by the detecting part as a target range, a changing part changing hue of a pixel included in the target range by virtually performing extension on the target range, and an information converting part converting color information of a pixel having hue not included in the target range into color information indicative of an achromatic color.
摘要翻译：图像处理装置可以用简单的配置，将待观察的细胞与要观察的细胞明确区分开。为此，图像处理装置包括从彩色图像的每个像素的颜色信息获得至少色调的颜色信息获取部分，检测颜色空间上的色调的模式值的检测部分，颜色空间上的预定范围，包括由检测部件检测到的色调的模式值作为目标范围，通过在目标范围上虚拟地执行扩展来改变包括在目标范围内的像素的色调的改变部分，以及信息转换部分将不包括在目标范围中的色调的像素的颜色信息转换成指示无彩色的颜色信息。

8. 发明申请

US20120088112A1 BIAXIALLY-ORIENTED POLYESTER FILM FOR USE AS WRAP-AROUND CONTAINER LABEL, AND WRAP-AROUND CONTAINER LABEL 有权
标题翻译：双面封装聚酯薄膜，用于封装容器标签和封装容器标签
公开(公告)号：US20120088112A1
公开(公告)日：2012-04-12
申请号：US13375714
申请日：2010-06-01
申请人： Hideki Ito , Masakazu Iwasaki
发明人： Hideki Ito , Masakazu Iwasaki
IPC分类号： B32B27/36 , C08K5/521
CPC分类号： C08J5/18 , B32B27/08 , B32B27/36 , B32B2250/03 , B32B2250/244 , B32B2250/40 , B32B2255/00 , B32B2255/10 , B32B2255/24 , B32B2305/70 , B32B2307/202 , B32B2307/21 , B32B2307/518 , B32B2519/00 , C08G63/183 , C08J2367/02 , C08K3/22 , C08K5/098 , C08K5/10 , C08K5/51 , C08K5/52 , C08K5/53 , C08K2003/2206 , C08K2003/2217 , C08K2003/2224 , C08K2201/019 , C08L67/03 , G09F2003/0251 , G09F2003/0273 , Y02P20/582 , Y10S428/9033 , Y10S428/91 , Y10T428/31786
摘要： The invention provides a biaxially-oriented polyester film that comprises a biaxially oriented polyethylene terephthalate film and contains 9000 ppm or less of ethylene terephthalate cyclic trimer, has a molten specific resistance of within 1.0×108Ω·cm, and at least one surface of the film has a surface resistivity of 13 log Ω or less under a relative humidity of 65%. The invention also provides a wrap-around label for a container produced from the film.
摘要翻译：本发明提供一种双轴取向聚酯膜，其包含双轴取向聚对苯二甲酸乙二醇酯膜，并含有9000ppm以下的对苯二甲酸乙二醇酯环状三聚体，其熔融电阻率在1.0×10 8Ω·cm·cm以内，膜的表面电阻率为13log＆OHgr; 或相对湿度65％以下。本发明还提供了一种由薄膜制成的容器的环绕标签。

9. 发明申请

US20120048180A1 FILM-FORMING MANUFACTURING APPARATUS AND METHOD 审中-公开
标题翻译：电影制作装置和方法
公开(公告)号：US20120048180A1
公开(公告)日：2012-03-01
申请号：US13196309
申请日：2011-08-02
申请人： Hideki Ito , Toshiro Tsumori , Kunihiko Suzuki
发明人： Hideki Ito , Toshiro Tsumori , Kunihiko Suzuki
IPC分类号： C30B25/10 , C23C16/46
CPC分类号： C23C16/325 , C23C16/455 , C23C16/45519 , C23C16/45557 , C23C16/458 , C23C16/46 , C30B25/10
摘要： It is an object of the present invention to provide a film-forming apparatus and a film-forming method that can prolong the lifetime of heaters used under high temperature conditions in an epitaxial growth technique. An inert gas discharge portion supplies an inert gas into the space containing the heater, gas is then discharged through the gas discharge portion without influence on the semiconductor substrate during film formation. It is therefore possible to prevent the reaction gas entering into the space containing the high-temperature heaters. This makes it possible to prevent a reaction between hydrogen gas contained in the reaction gas and SiC constituting the heaters. Therefore, it is possible to prevent carbon used as a base material of the heaters from being exposed due to the decomposition of SiC and then reacting with hydrogen gas. This makes it possible to prolong the lifetime of the heaters.
摘要翻译：本发明的目的是提供一种能够延长在外延生长技术中在高温条件下使用的加热器的寿命的成膜装置和成膜方法。惰性气体排出部分将惰性气体供入包含加热器的空间中，然后气体在成膜期间通过气体排出部分排出，而不影响半导体基板。因此，可以防止反应气体进入含有高温加热器的空间。这使得可以防止反应气体中所含的氢气与构成加热器的SiC反应。因此，可以防止由于SiC的分解而使用作为加热器的基材的碳然后与氢气反应。这使得可以延长加热器的寿命。

10. 发明授权

US07828891B2 Pigment compositions, colored compositions making use of the pigment compositions, and color filters 有权
标题翻译：颜料组合物，使用颜料组合物的着色组合物和滤色器
公开(公告)号：US07828891B2
公开(公告)日：2010-11-09
申请号：US12592009
申请日：2009-11-18
申请人： Ryo Hoshino , Hideki Ito , Kazuhiko Kaneko , Kazutaka Aoki , Shotoku Takami
发明人： Ryo Hoshino , Hideki Ito , Kazuhiko Kaneko , Kazutaka Aoki , Shotoku Takami
IPC分类号： C09B67/20
CPC分类号： C09B67/0041 , C09B67/006 , C09B67/0086 , G03F7/0007
摘要： Pigment compositions each contain an organic pigment and at least one compound selected from compounds represented by the following formula (II), respectively: A-N═N—CH(COCH3)—CONH-E, B—N═N—CH(COCH3)—CONH-E or C—N═N—CH(COCH3)—CONH-E, wherein A represents a substituted or unsubstituted phenyl group, B represents a substituted or unsubstituted β-naphthyl group, C represents a substituted or unsubstituted α-anthraquinonyl group, D represents a particular substituted aromatic group, and E represents a substituted or unsubstituted phenyl group, with a proviso that the compounds each have at least one substituent represented by —COOM or —SO3M in which M represents a hydrogen atom, metal atom, ammonium group, organic amine group or quaternary ammonium group. Colored compositions making use of the pigment compositions and color filters making use of the colored compositions are also disclosed.
摘要翻译：颜料组合物各自含有有机颜料和选自下式（II）表示的化合物中的至少一种化合物：AN = N-CH（COCH 3）-CONH-E，B-N = N-CH（COCH 3） - CONH-E或C-N = N-CH（COCH 3）-CONH-E，其中A表示取代或未取代的苯基，B表示取代或未取代的芳基 - 萘基，C表示取代或未取代的α-蒽醌基基团，D表示特定取代的芳族基团，E表示取代或未取代的苯基，条件是该化合物各自具有至少一个由-COOM或-SO 3 M表示的取代基，其中M表示氢原子，金属原子，铵基，有机胺基或季铵基。还公开了利用颜料组合物和使用着色组合物的滤色器的有色组合物。

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