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1. 发明申请

US20050151277A1 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US20050151277A1
公开(公告)日：2005-07-14
申请号：US11035592
申请日：2005-01-13
申请人： Hidechika Kawazoe , Yukio Tamai , Atsushi Shimaoka , Naoto Hagiwara , Hidetoshi Masuda , Toshimasa Suzuki
发明人： Hidechika Kawazoe , Yukio Tamai , Atsushi Shimaoka , Naoto Hagiwara , Hidetoshi Masuda , Toshimasa Suzuki
IPC分类号： H01L27/105 , G11C13/00 , G11C16/02 , H01L27/115 , H01L27/24 , H01L45/00 , H01L27/11
CPC分类号： H01L27/2436 , G11C13/0007 , G11C13/003 , G11C2213/31 , G11C2213/78 , G11C2213/79 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1625 , H01L45/1641
摘要： A nonvolatile memory element is formed by layering a lower electrode, a variable resistor and an upper electrode in sequence. The variable resistor is formed in which crystallinity and amorphism are mixed. Thus, the nonvolatile memory element is formed. More preferably, the variable resistor is a praseodymium-calcium-manganese oxide represented by a general formula, Pr1-xCaxMnO3, that has been formed at a film forming temperature from 350° C. to 500° C. Alternatively, the variable resistor is formed as a film at a film forming temperature that allows the variable resistor to become of an amorphous state or a state where crystallinity and amorphism are mixed and, then, is subjected to an annealing process at a temperature higher than the film forming temperature, in a temperature range where the variable resistor can maintain the state where crystallinity and amorphism are mixed.
摘要翻译：通过依次层叠下电极，可变电阻器和上电极来形成非易失性存储元件。形成结晶性和非晶态混合的可变电阻器。因此，形成非易失性存储元件。更优选地，可变电阻器是由通式为Pr 1-x M x MnO 3 N 3表示的镨 - 钙 - 锰氧化物，在350℃至500℃的成膜温度下形成的可变电阻器。或者，可变电阻器以允许可变电阻器变为非晶态的成膜温度或结晶度的状态形成为膜并且将非晶化混合，然后在可变电阻器可以保持结晶性和非晶态混合的状态的温度范围内，在高于成膜温度的温度下进行退火处理。

2. 发明授权

US07259387B2 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US07259387B2
公开(公告)日：2007-08-21
申请号：US11035592
申请日：2005-01-13
申请人： Hidechika Kawazoe , Yukio Tamai , Atsushi Shimaoka , Naoto Hagiwara , Hidetoshi Masuda , Toshimasa Suzuki
发明人： Hidechika Kawazoe , Yukio Tamai , Atsushi Shimaoka , Naoto Hagiwara , Hidetoshi Masuda , Toshimasa Suzuki
IPC分类号： H01L47/00
CPC分类号： H01L27/2436 , G11C13/0007 , G11C13/003 , G11C2213/31 , G11C2213/78 , G11C2213/79 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1625 , H01L45/1641
摘要： A nonvolatile memory element is formed by layering a lower electrode, a variable resistor and an upper electrode in sequence. The variable resistor is formed in which crystallinity and amorphism are mixed. Thus, the nonvolatile memory element is formed. More preferably, the variable resistor is a praseodymium-calcium-manganese oxide represented by a general formula, Pr1-xCaxMnO3, that has been formed at a film forming temperature from 350° C. to 500° C. Alternatively, the variable resistor is formed as a film at a film forming temperature that allows the variable resistor to become of an amorphous state or a state where crystallinity and amorphism are mixed and, then, is subjected to an annealing process at a temperature higher than the film forming temperature, in a temperature range where the variable resistor can maintain the state where crystallinity and amorphism are mixed.
摘要翻译：通过依次层叠下电极，可变电阻器和上电极来形成非易失性存储元件。形成结晶性和非晶态混合的可变电阻器。因此，形成非易失性存储元件。更优选地，可变电阻器是由通式为Pr 1-x M x MnO 3 N 3表示的镨 - 钙 - 锰氧化物，在350℃至500℃的成膜温度下形成的可变电阻器。或者，可变电阻器以允许可变电阻器变为非晶态的成膜温度或结晶度的状态形成为膜并且将非晶化混合，然后在可变电阻器可以保持结晶性和非晶态混合的状态的温度范围内，在高于成膜温度的温度下进行退火处理。

3. 发明授权

US07045840B2 Nonvolatile semiconductor memory device comprising a variable resistive element containing a perovskite-type crystal structure 有权
标题翻译：包括含有钙钛矿型晶体结构的可变电阻元件的非易失性半导体存储器件
公开(公告)号：US07045840B2
公开(公告)日：2006-05-16
申请号：US11001744
申请日：2004-12-01
申请人： Yukio Tamai , Nobuyoshi Awaya , Shinji Kobayashi , Hidechika Kawazoe , Toshimasa Suzuki , Hidetoshi Masuda , Naoto Hagiwara , Yuji Matsushita , Yuji Nishi
发明人： Yukio Tamai , Nobuyoshi Awaya , Shinji Kobayashi , Hidechika Kawazoe , Toshimasa Suzuki , Hidetoshi Masuda , Naoto Hagiwara , Yuji Matsushita , Yuji Nishi
IPC分类号： H01L29/76
CPC分类号： G11C13/0007 , G11C2213/31 , G11C2213/52 , G11C2213/79 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/147 , H01L45/1625
摘要： In a nonvolatile semiconductor memory device including a variable resistive element formed by sequentially stacking a lower electrode, a variable resistor with a perovskite-type crystal structure, and an upper electrode, at least one of the lower electrode and the upper electrode is a particulate electrode configured to include a particulate conductor aggregate so that the contact area with the variable resistor at an interface is effectively reduced to realize high initial resistance of the variable resistive element. Further, a film of the variable resistor is preferably formed so as to be in a highly crystalline state.
摘要翻译：在包括通过顺序堆叠下电极，具有钙钛矿型晶体结构的可变电阻器和上电极形成的可变电阻元件的非易失性半导体存储器件中，下电极和上电极中的至少一个是颗粒电极被配置为包括颗粒状导体集合体，使得在界面处与可变电阻器的接触面积被有效地减小以实现可变电阻元件的高初始电阻。此外，可变电阻器的膜优选形成为高度结晶的状态。

4. 发明申请

US20050145910A1 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US20050145910A1
公开(公告)日：2005-07-07
申请号：US11001744
申请日：2004-12-01
申请人： Yukio Tamai , Nobuyoshi Awaya , Shinji Kobayashi , Hidechika Kawazoe , Toshimasa Suzuki , Hidetoshi Masuda , Naoto Hagiwara , Yuji Matsushita , Yuji Nishi
发明人： Yukio Tamai , Nobuyoshi Awaya , Shinji Kobayashi , Hidechika Kawazoe , Toshimasa Suzuki , Hidetoshi Masuda , Naoto Hagiwara , Yuji Matsushita , Yuji Nishi
IPC分类号： H01L27/10 , G11C13/00 , H01L21/8234 , H01L29/76 , H01L45/00
CPC分类号： G11C13/0007 , G11C2213/31 , G11C2213/52 , G11C2213/79 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/147 , H01L45/1625
摘要： In a nonvolatile semiconductor memory device including a variable resistive element formed by sequentially stacking a lower electrode, a variable resistor with a perovskite-type crystal structure, and an upper electrode, at least one of the lower electrode and the upper electrode is a particulate electrode configured to include a particulate conductor aggregate, so that the contact area with the variable resistor at an interface is effectively reduced to realize high initial resistance of the variable resistive element. Further, a film of the variable resistor is preferably formed so as to be in a highly crystalline state.
摘要翻译：在包括通过顺序堆叠下电极，具有钙钛矿型晶体结构的可变电阻器和上电极形成的可变电阻元件的非易失性半导体存储器件中，下电极和上电极中的至少一个是颗粒电极被配置为包括颗粒状导体集合体，使得与界面处的可变电阻器的接触面积被有效地减小以实现可变电阻元件的高初始电阻。此外，可变电阻器的膜优选形成为高度结晶的状态。

5. 发明申请

US20050153504A1 Method for manufacturing nonvolatile semiconductor memory device 审中-公开
标题翻译：非易失性半导体存储器件的制造方法
公开(公告)号：US20050153504A1
公开(公告)日：2005-07-14
申请号：US11035089
申请日：2005-01-12
申请人： Hidechika Kawazoe , Yukio Tamai , Atsushi Shimaoka , Naoto Hagiwara , Yuji Matsushita , Yuji Nishi
发明人： Hidechika Kawazoe , Yukio Tamai , Atsushi Shimaoka , Naoto Hagiwara , Yuji Matsushita , Yuji Nishi
IPC分类号： H01L27/10 , G11C13/00 , H01L21/02 , H01L21/8246 , H01L21/8247 , H01L27/112 , H01L27/115 , H01L27/24 , H01L29/68 , H01L45/00 , H01L21/8238
CPC分类号： H01L45/1675 , G11C13/0007 , G11C13/003 , G11C2213/31 , G11C2213/78 , G11C2213/79 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1625
摘要： In a manufacturing method of a nonvolatile semiconductor memory device including a variable resistive element having a variable resistor made of a perovskite-type metal oxide film, the variable resistor is formed at a temperature which is lower than the melting point of a metal wire layer that has been formed before formation of the variable resistor. More preferably, the variable resistor is formed by a praseodymium calcium manganese oxide, which is represented by a general formula, Pr1-xCaxMnO3, carried out at a film forming temperature in a range from 350° C. to 500° C. according to a sputtering method.
摘要翻译：在包括具有由钙钛矿型金属氧化物膜制成的可变电阻器的可变电阻元件的非易失性半导体存储器件的制造方法中，可变电阻器形成在低于金属线层的熔点的温度，在形成可变电阻器之前形成。更优选地，可变电阻器由镨钙锰氧化物形成，所述镨钙锰氧化物由通式Ⅺ1-x≡MMn O 3 根据溅射法在350℃至500℃的范围内的成膜温度下进行。

6. 发明授权

US09023510B2 Electrochemical device 有权
标题翻译：电化学装置
公开(公告)号：US09023510B2
公开(公告)日：2015-05-05
申请号：US13635288
申请日：2011-03-11
申请人： Kyotaro Goto , Naoto Hagiwara , Yuki Kawai , Katsuei Ishida
发明人： Kyotaro Goto , Naoto Hagiwara , Yuki Kawai , Katsuei Ishida
IPC分类号： H01M2/02 , H01G11/22 , H01G11/08 , H01G11/78 , H01M2/06 , H01M2/10 , H01M10/04 , H01G11/82 , H01M2/22 , H01M10/0525 , H01M10/0583 , H01M10/42
CPC分类号： H01M2/0277 , H01G11/08 , H01G11/22 , H01G11/78 , H01G11/82 , H01M2/021 , H01M2/0212 , H01M2/06 , H01M2/1094 , H01M2/22 , H01M10/0436 , H01M10/045 , H01M10/0525 , H01M10/0583 , H01M10/425 , Y02E60/13
摘要： [Object] To provide an electrochemical device that permits a thin package, as well as securely prevents an electrolyte or gas in an internal space from leaking outside even when temperature rise occurs in the electrochemical device during the process where the electrochemical device is reflow soldered to a circuit board or encapsulated into an IC card.[Solution] In the electrochemical device RB1, the main body of the package PA includes first cover plate 15, first terminal plate 12, frame plate 14, second terminal plate 13, and second cover plate 16 stacked in this order and bonded at the facing surfaces. The electric storage element SD is encapsulated in internal space IS formed, between the cover plates 15, 16, by the through holes 12a1, 13a1 in the frame sections 12a, 13a of the terminal plates 12, 13 and the through hole 14a in the frame plate 14.
摘要翻译：本发明提供允许薄封装的电化学装置，并且即使在电化学装置回流焊接到电化学装置期间在电化学装置中发生温度上升时，也可以可靠地防止内部空间中的电解质或气体泄漏到外部电路板或封装在IC卡中。 [解决方案]在电化学装置RB1中，封装PA的主体包括依次层叠的第一盖板15，第一端子板12，框架板14，第二端子板13和第二盖板16，表面。蓄电元件SD被封装在通过端子板12,13的框架部分12a，13a中的通孔12a1，13a1和框架中的通孔14a之间形成在盖板15,16之间的内部空间IS中板14。

7. 发明申请

US20110176254A1 ELECTROCHEMICAL DEVICE 失效
标题翻译：电化学装置
公开(公告)号：US20110176254A1
公开(公告)日：2011-07-21
申请号：US13122139
申请日：2009-09-30
申请人： Kazushi Yawata , Naoto Hagiwara , Katsuei Ishida
发明人： Kazushi Yawata , Naoto Hagiwara , Katsuei Ishida
IPC分类号： H01G9/00
CPC分类号： H01G9/0003 , H01G9/016 , H01G9/10 , H01G9/155 , H01G11/18 , H01G11/74 , H01G11/80 , H01M2/0212 , H01M2/06 , H01M2/30 , Y02E60/13
摘要： Provided is an electrochemical device applicable to high-temperature reflow soldering wherein a lead-free solder is used. An electric double layer capacitor (10) is provided with a capacitor element (11), a package (14) having the capacitor element (11) sealed therein, and a positive electrode terminal (12) and a negative electrode terminal (13), each of which is led out from the capacitor element and is provided with a part sealed in the package (14) with the capacitor element and other part led out to the outside the package. On a part of the positive electrode terminal (12) and on a part of the negative electrode terminal (13), increased thermal resistance sections (HR1) for suppressing heat transfer to the capacitor element (11) via the terminals (12, 13) from other parts of the positive electrode terminal (12) and other parts of the negative electrode terminal (13) are arranged, respectively.
摘要翻译：提供了适用于使用无铅焊料的高温回流焊接的电化学装置。双电层电容器（10）具有电容器元件（11），密封有电容器元件（11）的封装（14）和正极端子（12）和负极端子（13），其中的每一个从电容器元件引出并且设置有密封在封装（14）中的部分，电容器元件和其它部分被引出到封装的外部。在正极端子（12）的一部分和负极端子（13）的一部分上，经由端子（12,13）抑制向电容器元件（11）的热传递的增加的热阻部（HR1）从正极端子（12）的其他部分和负极端子（13）的其他部分分别配置。

8. 发明授权

US08802268B2 Electrochemical device and manufacturing method thereof 有权
标题翻译：电化学装置及其制造方法
公开(公告)号：US08802268B2
公开(公告)日：2014-08-12
申请号：US13203663
申请日：2010-03-16
申请人： Naoto Hagiwara , Katsuei Ishida , Kazushi Yawata
发明人： Naoto Hagiwara , Katsuei Ishida , Kazushi Yawata
IPC分类号： H01M2/18 , H01M10/0585 , H01M10/0525 , H01M4/70 , H01G11/76 , H01M10/04 , H01G9/02 , H01M14/00 , H01G9/008 , H01G9/04 , H01G9/00 , H01G11/72 , H01M2/02 , H01G11/52 , H01M10/0583 , H01G11/12 , H01G11/70 , H01G11/86 , H01G11/80
CPC分类号： H01G9/016 , H01G9/02 , H01G9/058 , H01G9/155 , H01G11/12 , H01G11/52 , H01G11/70 , H01G11/72 , H01G11/76 , H01G11/80 , H01G11/86 , H01M2/021 , H01M2/18 , H01M4/70 , H01M10/045 , H01M10/0459 , H01M10/0525 , H01M10/0583 , H01M14/00 , Y02E60/122 , Y02E60/13 , Y10T29/417 , Y10T29/49108 , Y10T29/49114
摘要： Provide an electrochemical device offering a large capacity per current collector and a low internal resistance, which is also easy to assemble. Provided is a laminated sheet body 16S by inserting a negative-electrode continuous body 11BW between an adjacent pair of first current collectors 12a, 12a with their first current collector main units 12a1 connected together, and also between an adjacent pair of first current collectors 12a, 12a with their first tabs 12a2 connected together, with respect to a plurality of positive electrodes 11A arranged in the width direction apart from each other, after which the negative-electrode continuous body of the laminated sheet body is cut to the unit width dimension of an element to obtain a plurality of laminated bodies 16.
摘要翻译：提供每个集电器提供大容量的电化学装置和低内部电阻，这也易于组装。通过在相邻的一对第一集电体12a，12a之间插入负极连接体11BW，其第一集电体主体12a1连接在一起，以及相邻的一对第一集电体12a， 12a，其第一突片12a2相对于彼此沿宽度方向布置的多个正电极11A连接在一起，之后将层压片体的负极连续体切割成单位宽度尺寸以获得多个层压体16。

9. 发明授权

US08619409B2 Electrochemical device 失效
标题翻译：电化学装置
公开(公告)号：US08619409B2
公开(公告)日：2013-12-31
申请号：US13122139
申请日：2009-09-30
申请人： Kazushi Yawata , Naoto Hagiwara , Katsuei Ishida
发明人： Kazushi Yawata , Naoto Hagiwara , Katsuei Ishida
IPC分类号： H01G4/228 , H01G9/00 , H01G5/01 , H01G5/38 , H01G5/06 , H01M8/04 , H01M10/50
CPC分类号： H01G9/0003 , H01G9/016 , H01G9/10 , H01G9/155 , H01G11/18 , H01G11/74 , H01G11/80 , H01M2/0212 , H01M2/06 , H01M2/30 , Y02E60/13
摘要： An electrochemical device, e.g., an electric double layer capacitor, is applicable to high-temperature reflow soldering wherein a lead-free solder is used, and is provided with an electric storage element, a package having the electric storage element sealed therein, and a positive electrode terminal and a negative electrode terminal, each of which is led out from the electric storage element and is provided with a part sealed in the package with the electric storage element and other part led out to the outside the package. On a part of the positive electrode terminal and on a part of the negative electrode terminal, increased thermal resistance sections for suppressing heat transfer to the electric storage element via the terminals from other parts of the positive electrode terminal and other parts of the negative electrode terminal are arranged, respectively.
摘要翻译：诸如双电层电容器的电化学装置适用于使用无铅焊料的高温回流焊接，并且设置有蓄电元件，其中密封有蓄电元件的封装和正极端子和负极端子，每个从蓄电元件引出，并且设置有封装在封装中的部分，其中蓄电元件和其它部分被引出到封装外部。在正极端子的一部分和负极端子的一部分上，增加了用于抑制从正极端子的其他部分和负极端子的其他部分经由端子对蓄电元件的热传递的热阻部分分别布置。

10. 发明申请

US20080081001A1 MEDIUM FOR ANALYSIS HAVING A FLOW CHANNEL FOR A FLUID SPECIMEN AND A METHOD OF FLOWING THE FLUID SPECIMEN 审中-公开
标题翻译：用于流体流动通道的分析介质和流体样本流动方法
公开(公告)号：US20080081001A1
公开(公告)日：2008-04-03
申请号：US11861192
申请日：2007-09-25
申请人： Takashi Ishiguro , Naoto Hagiwara
发明人： Takashi Ishiguro , Naoto Hagiwara
IPC分类号： B01J19/00
CPC分类号： B01L3/50273 , B01F5/0602 , B01F5/0655 , B01F13/0059 , B01F15/0201 , B01F15/0233 , B01L3/502753 , B01L7/525 , B01L2200/0621 , B01L2300/024 , B01L2300/0806 , B01L2300/0861 , B01L2400/0409 , B01L2400/0487 , Y10T137/0318
摘要： A medium for analysis capable of conducting processing such as synthesis reaction, mixing, or centrifugation by a simple structure, and a method of conducting processing such as synthesis reaction, mixing, or centrifugation by using the medium for analysis, are disclosed. In one aspect, the medium for analysis is formed with an analysis part including a liquid storage part for storing and supplying a fluid specimen and a channel extending from the liquid storage part in the centrifugal direction and closed at the final end thereof to a substrate formed rotatably.
摘要翻译：公开了一种能够通过简单结构进行合成反应，混合或离心等处理的分析介质，以及使用分析介质进行合成反应，混合或离心等处理的方法。在一个方面，用于分析的介质由分析部分形成，分析部分包括用于储存和供应流体样本的液体存储部分和从液体存储部分在离心方向上延伸的通道，并在其最终端封闭形成可旋转。

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