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1. 发明申请

US20050145910A1 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US20050145910A1
公开(公告)日：2005-07-07
申请号：US11001744
申请日：2004-12-01
申请人： Yukio Tamai , Nobuyoshi Awaya , Shinji Kobayashi , Hidechika Kawazoe , Toshimasa Suzuki , Hidetoshi Masuda , Naoto Hagiwara , Yuji Matsushita , Yuji Nishi
发明人： Yukio Tamai , Nobuyoshi Awaya , Shinji Kobayashi , Hidechika Kawazoe , Toshimasa Suzuki , Hidetoshi Masuda , Naoto Hagiwara , Yuji Matsushita , Yuji Nishi
IPC分类号： H01L27/10 , G11C13/00 , H01L21/8234 , H01L29/76 , H01L45/00
CPC分类号： G11C13/0007 , G11C2213/31 , G11C2213/52 , G11C2213/79 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/147 , H01L45/1625
摘要： In a nonvolatile semiconductor memory device including a variable resistive element formed by sequentially stacking a lower electrode, a variable resistor with a perovskite-type crystal structure, and an upper electrode, at least one of the lower electrode and the upper electrode is a particulate electrode configured to include a particulate conductor aggregate, so that the contact area with the variable resistor at an interface is effectively reduced to realize high initial resistance of the variable resistive element. Further, a film of the variable resistor is preferably formed so as to be in a highly crystalline state.
摘要翻译：在包括通过顺序堆叠下电极，具有钙钛矿型晶体结构的可变电阻器和上电极形成的可变电阻元件的非易失性半导体存储器件中，下电极和上电极中的至少一个是颗粒电极被配置为包括颗粒状导体集合体，使得与界面处的可变电阻器的接触面积被有效地减小以实现可变电阻元件的高初始电阻。此外，可变电阻器的膜优选形成为高度结晶的状态。

2. 发明授权

US07045840B2 Nonvolatile semiconductor memory device comprising a variable resistive element containing a perovskite-type crystal structure 有权
标题翻译：包括含有钙钛矿型晶体结构的可变电阻元件的非易失性半导体存储器件
公开(公告)号：US07045840B2
公开(公告)日：2006-05-16
申请号：US11001744
申请日：2004-12-01
申请人： Yukio Tamai , Nobuyoshi Awaya , Shinji Kobayashi , Hidechika Kawazoe , Toshimasa Suzuki , Hidetoshi Masuda , Naoto Hagiwara , Yuji Matsushita , Yuji Nishi
发明人： Yukio Tamai , Nobuyoshi Awaya , Shinji Kobayashi , Hidechika Kawazoe , Toshimasa Suzuki , Hidetoshi Masuda , Naoto Hagiwara , Yuji Matsushita , Yuji Nishi
IPC分类号： H01L29/76
CPC分类号： G11C13/0007 , G11C2213/31 , G11C2213/52 , G11C2213/79 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/147 , H01L45/1625
摘要： In a nonvolatile semiconductor memory device including a variable resistive element formed by sequentially stacking a lower electrode, a variable resistor with a perovskite-type crystal structure, and an upper electrode, at least one of the lower electrode and the upper electrode is a particulate electrode configured to include a particulate conductor aggregate so that the contact area with the variable resistor at an interface is effectively reduced to realize high initial resistance of the variable resistive element. Further, a film of the variable resistor is preferably formed so as to be in a highly crystalline state.
摘要翻译：在包括通过顺序堆叠下电极，具有钙钛矿型晶体结构的可变电阻器和上电极形成的可变电阻元件的非易失性半导体存储器件中，下电极和上电极中的至少一个是颗粒电极被配置为包括颗粒状导体集合体，使得在界面处与可变电阻器的接触面积被有效地减小以实现可变电阻元件的高初始电阻。此外，可变电阻器的膜优选形成为高度结晶的状态。

3. 发明申请

US20050151277A1 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US20050151277A1
公开(公告)日：2005-07-14
申请号：US11035592
申请日：2005-01-13
申请人： Hidechika Kawazoe , Yukio Tamai , Atsushi Shimaoka , Naoto Hagiwara , Hidetoshi Masuda , Toshimasa Suzuki
发明人： Hidechika Kawazoe , Yukio Tamai , Atsushi Shimaoka , Naoto Hagiwara , Hidetoshi Masuda , Toshimasa Suzuki
IPC分类号： H01L27/105 , G11C13/00 , G11C16/02 , H01L27/115 , H01L27/24 , H01L45/00 , H01L27/11
CPC分类号： H01L27/2436 , G11C13/0007 , G11C13/003 , G11C2213/31 , G11C2213/78 , G11C2213/79 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1625 , H01L45/1641
摘要： A nonvolatile memory element is formed by layering a lower electrode, a variable resistor and an upper electrode in sequence. The variable resistor is formed in which crystallinity and amorphism are mixed. Thus, the nonvolatile memory element is formed. More preferably, the variable resistor is a praseodymium-calcium-manganese oxide represented by a general formula, Pr1-xCaxMnO3, that has been formed at a film forming temperature from 350° C. to 500° C. Alternatively, the variable resistor is formed as a film at a film forming temperature that allows the variable resistor to become of an amorphous state or a state where crystallinity and amorphism are mixed and, then, is subjected to an annealing process at a temperature higher than the film forming temperature, in a temperature range where the variable resistor can maintain the state where crystallinity and amorphism are mixed.
摘要翻译：通过依次层叠下电极，可变电阻器和上电极来形成非易失性存储元件。形成结晶性和非晶态混合的可变电阻器。因此，形成非易失性存储元件。更优选地，可变电阻器是由通式为Pr 1-x M x MnO 3 N 3表示的镨 - 钙 - 锰氧化物，在350℃至500℃的成膜温度下形成的可变电阻器。或者，可变电阻器以允许可变电阻器变为非晶态的成膜温度或结晶度的状态形成为膜并且将非晶化混合，然后在可变电阻器可以保持结晶性和非晶态混合的状态的温度范围内，在高于成膜温度的温度下进行退火处理。

4. 发明授权

US07259387B2 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US07259387B2
公开(公告)日：2007-08-21
申请号：US11035592
申请日：2005-01-13
申请人： Hidechika Kawazoe , Yukio Tamai , Atsushi Shimaoka , Naoto Hagiwara , Hidetoshi Masuda , Toshimasa Suzuki
发明人： Hidechika Kawazoe , Yukio Tamai , Atsushi Shimaoka , Naoto Hagiwara , Hidetoshi Masuda , Toshimasa Suzuki
IPC分类号： H01L47/00
CPC分类号： H01L27/2436 , G11C13/0007 , G11C13/003 , G11C2213/31 , G11C2213/78 , G11C2213/79 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1625 , H01L45/1641
摘要： A nonvolatile memory element is formed by layering a lower electrode, a variable resistor and an upper electrode in sequence. The variable resistor is formed in which crystallinity and amorphism are mixed. Thus, the nonvolatile memory element is formed. More preferably, the variable resistor is a praseodymium-calcium-manganese oxide represented by a general formula, Pr1-xCaxMnO3, that has been formed at a film forming temperature from 350° C. to 500° C. Alternatively, the variable resistor is formed as a film at a film forming temperature that allows the variable resistor to become of an amorphous state or a state where crystallinity and amorphism are mixed and, then, is subjected to an annealing process at a temperature higher than the film forming temperature, in a temperature range where the variable resistor can maintain the state where crystallinity and amorphism are mixed.
摘要翻译：通过依次层叠下电极，可变电阻器和上电极来形成非易失性存储元件。形成结晶性和非晶态混合的可变电阻器。因此，形成非易失性存储元件。更优选地，可变电阻器是由通式为Pr 1-x M x MnO 3 N 3表示的镨 - 钙 - 锰氧化物，在350℃至500℃的成膜温度下形成的可变电阻器。或者，可变电阻器以允许可变电阻器变为非晶态的成膜温度或结晶度的状态形成为膜并且将非晶化混合，然后在可变电阻器可以保持结晶性和非晶态混合的状态的温度范围内，在高于成膜温度的温度下进行退火处理。

5. 发明授权

US08769170B2 Electronic device, control method for an electronic device, and recording medium 有权
标题翻译：电子设备，电子设备的控制方法和记录介质
公开(公告)号：US08769170B2
公开(公告)日：2014-07-01
申请号：US13234396
申请日：2011-09-16
申请人： Masayo Miyasaka , Hidetoshi Masuda
发明人： Masayo Miyasaka , Hidetoshi Masuda
IPC分类号： G06F3/00 , G06F5/00
CPC分类号： G06K15/402 , G06K15/1803 , G07G5/00
摘要： Managing commands that have not been executed is simplified while maintaining a state in which real-time commands can be executed. A printer 2 has a write control unit 21A that writes received commands to a receive buffer 31, a command execution unit 21B that executes the written commands, and a real-time command execution unit 21C that executes written commands that are real-time commands. The printer 2 enters a full-buffer mode as needed by the capacity of available storage space in the receive buffer 31, and when in the full-buffer mode the write control unit 21A cyclically writes commands to an auxiliary space created in the receive buffer, and the real-time command execution unit 21C reads and executes real-time commands from the auxiliary space.
摘要翻译：管理尚未执行的命令被简化，同时保持可以执行实时命令的状态。打印机2具有将接收到的命令写入到接收缓冲器31的写入控制单元21A，执行写入的命令的命令执行单元21B以及执行作为实时命令的写入命令的实时命令执行单元21C。打印机2根据需要通过接收缓冲器31中的可用存储空间的容量进入全缓冲器模式，并且当处于全缓冲器模式时，写入控制单元21A将命令循环地写入在接收缓冲器中创建的辅助空间，并且实时命令执行单元21C从辅助空间读取并执行实时命令。

6. 发明授权

US08555474B2 Method of manufacturing capacitor element 有权
标题翻译：制造电容元件的方法
公开(公告)号：US08555474B2
公开(公告)日：2013-10-15
申请号：US13189376
申请日：2011-07-22
申请人： Hidetoshi Masuda , Taisei Irieda , Masaru Kurosawa , Kotaro Mizuno
发明人： Hidetoshi Masuda , Taisei Irieda , Masaru Kurosawa , Kotaro Mizuno
IPC分类号： H01G9/00
CPC分类号： H01G4/302 , H01G4/012 , H01G4/232 , H01G9/048 , H01G9/07
摘要： A method of manufacturing a capacitor includes: anodizing a metal substrate in two stages by applying two different voltage so as to make first and second holes having different pitches, distributed randomly in an oxide substance; filling the first and second holes with an electrode material, respectively, to form first and second electrodes; connecting the first electrodes to a conductive layer formed on one surface of the oxide substance; and connecting the second electrodes to another conductive layer formed on another surface of the oxide substance.
摘要翻译：一种制造电容器的方法包括：通过施加两个不同的电压来对金属基板进行两级阳极氧化，以使得具有不同间距的第一和第二孔随机分布在氧化物质中; 分别用电极材料填充第一和第二孔，以形成第一和第二电极; 将所述第一电极连接到形成在所述氧化物物质的一个表面上的导电层; 以及将所述第二电极连接到形成在所述氧化物物质的另一表面上的另一导电层。

7. 发明授权

US08411190B2 Control apparatus, control method, and computer-readable recording medium 有权
公开(公告)号：US08411190B2
公开(公告)日：2013-04-02
申请号：US12761771
申请日：2010-04-16
申请人： Hidetoshi Masuda , Toshiaki Ueguri
发明人： Hidetoshi Masuda , Toshiaki Ueguri
IPC分类号： H04N5/222 , H04N5/225 , H04N5/232
CPC分类号： H04N5/232 , H04N1/00204 , H04N1/00408 , H04N1/0044 , H04N5/23203 , H04N5/23222 , H04N2101/00
摘要： A control apparatus for controlling an image capture apparatus includes a communication unit and a control unit. The communication unit transmits a first command to the image capture apparatus if a predetermined area in a captured image received from the image capture apparatus and a pointer operated by an operation unit are overlapped. The communication unit transmits a second command to the image capture apparatus if a button of the operation unit is clicked in a state that the predetermined area and the pointer are overlapped.

8. 发明授权

US08027145B2 Capacitor element and method of manufacturing capacitor element 有权
标题翻译：电容元件及制造电容器元件的方法
公开(公告)号：US08027145B2
公开(公告)日：2011-09-27
申请号：US12182110
申请日：2008-07-29
申请人： Kazushi Yawata , Hidetoshi Masuda , Masaru Kurosawa , Kotaro Mizuno
发明人： Kazushi Yawata , Hidetoshi Masuda , Masaru Kurosawa , Kotaro Mizuno
IPC分类号： H01G4/005 , H01G4/06
CPC分类号： H01G9/055 , H01G9/0032 , H01G9/15 , Y10T29/417 , Y10T29/435
摘要： There are provided a porous plate dielectric substance, pillar-shaped electrodes respectively formed in pores belonging to a first group and pores belonging to a second group alternately arranged on the dielectric substance, insulator layers made of an organic insulator formed on tips of pillar-shaped electrodes in the pores of the first and second groups so as to fill the pores and hide electrodes respectively provided on one principal surface and another principal surface of the dielectric substance and connected to base ends of the pillar-shaped electrodes.
摘要翻译：提供了一种多孔板介电物质，分别形成在属于第一组的孔中的柱状电极和交替布置在电介质上的第二组的孔，由形成在柱状的尖端上的有机绝缘体制成的绝缘体层电极在第一和第二组的孔中，以便填充分别设置在电介质的一个主表面和另一个主表面上并连接到柱状电极的基端的孔和隐藏电极。

9. 发明授权

US06381417B1 Data reading apparatus 有权
标题翻译：数据读取装置
公开(公告)号：US06381417B1
公开(公告)日：2002-04-30
申请号：US09426694
申请日：1999-10-25
申请人： Masayuki Yano , Hidetoshi Masuda
发明人： Masayuki Yano , Hidetoshi Masuda
IPC分类号： G03B724
CPC分类号： G06F11/1612 , G11B31/00
摘要： A data reading apparatus adapted for a film cartridge having a data recording part provided on a predetermined moving member includes a first data reading device which reads data from the data recording part moving, a second data reading device which reads data from the data recording part moving and which is disposed at a position different from that of the first data reading device with respect to a moving direction of the data recording part, and a data obtaining circuit which makes a comparison between data read by the first data reading device, and data read by the second data reading device and obtains, on the basis of a result of the comparison, data corresponding to data recorded on the data recording part, if the data read by the first and second data reading devices are identical.
摘要翻译：适用于具有设置在预定移动部件上的数据记录部件的胶片暗盒的数据读取装置包括从数据记录部分移动读取数据的第一数据读取装置，从数据记录部分移动读取数据的第二数据读取装置并且相对于数据记录部的移动方向设置在与第一数据读取装置的位置不同的位置，以及数据获取电路，其对由第一数据读取装置读取的数据和数据读取之间进行比较并且如果由第一和第二数据读取装置读取的数据相同，则基于比较结果，获得与记录在数据记录部分上的数据相对应的数据。

10. 发明授权

US08837111B2 Capacitor element and capacitor device having the same 有权
标题翻译：具有相同的电容元件和电容器器件
公开(公告)号：US08837111B2
公开(公告)日：2014-09-16
申请号：US13422694
申请日：2012-03-16
申请人： Yoshinari Take , Hidetoshi Masuda , Kenichi Ota
发明人： Yoshinari Take , Hidetoshi Masuda , Kenichi Ota
IPC分类号： H01G4/005 , H01G4/228 , H01G4/06 , H01G4/38 , H01G4/30
CPC分类号： H01G4/30
摘要： A capacitor forming unit according to one embodiment includes a dielectric plate with a plurality of through holes; a first conductor film formed on an upper surface of the dielectric plate; a first insulator film formed on the front end portion of the upper surface of the dielectric plate; a second conductor film formed on a lower surface of the dielectric plate; a second insulator film formed on the rear end portion of the lower surface of the dielectric plate; first electrode rods disposed in some of the through holes; and second electrode rods disposed in the remaining through holes where the first electrode rods are not disposed. The first electrodes are electrically connected to the first conductor film and electrically insulated from the second conductor film. The second electrode rods are electrically connected to the second conductor film and are electrically insulated from the first conductor film.
摘要翻译：根据一个实施例的电容器形成单元包括具有多个通孔的电介质板; 形成在电介质板的上表面上的第一导体膜; 形成在电介质板的上表面的前端部的第一绝缘膜; 形成在电介质板的下表面上的第二导体膜; 形成在电介质板的下表面的后端部分上的第二绝缘膜; 设置在一些通孔中的第一电极棒; 以及设置在其中未设置第一电极棒的剩余通孔中的第二电极棒。第一电极电连接到第一导体膜并与第二导体膜电绝缘。第二电极棒电连接到第二导体膜并与第一导体膜电绝缘。

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