会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • Power semiconductor device
    • 功率半导体器件
    • US20060237786A1
    • 2006-10-26
    • US11384260
    • 2006-03-21
    • Hideaki NinomiyaMasanobu TsuchitaniSatoshi TeramaeMasakazu YamaguchiKoichi SugiyamaSatoshi UranoKeiko Kawamura
    • Hideaki NinomiyaMasanobu TsuchitaniSatoshi TeramaeMasakazu YamaguchiKoichi SugiyamaSatoshi UranoKeiko Kawamura
    • H01L29/76
    • H01L29/7397H01L29/0623H01L29/0653H01L29/407H01L29/4236H01L29/42368H01L29/7393
    • A power semiconductor device according to the present invention comprises: a first conductive type base layer; a second conductive type base layer selectively formed on the first conductive type base layer; an insulation layer formed in the region on the first conductive type base layer on which the second conductive type base layer is not formed; a gate insulation film formed on the inner surface of a trench formed between the second conductive type base layer and the insulation layer so as to separate them from each other and to reach the first conductive type base layer from the surface of the second conductive type base layer; a first conductive type source layer selectively formed on the surface of the second conductive type base layer in contact with the gate insulation film; a gate electrode formed in the trench and insulated from the first conductive type base layer, the second conductive type base layer, and the first conductive type source layer by the gate insulation film; a main electrode electrically connected to the first conductive type base layer and the second conductive type base layer; and a first conductive type or second conductive type floating layer formed on the bottom of the insulation layer.
    • 根据本发明的功率半导体器件包括:第一导电型基极层; 选择性地形成在所述第一导电型基底层上的第二导电型基底层; 形成在不形成第二导电型基底层的第一导电型基底层上的区域中的绝缘层; 形成在形成在第二导电型基极层和绝缘层之间的沟槽的内表面上以便将它们彼此分离并从第二导电类型基底的表面到达第一导电型基极的栅极绝缘膜 层; 选择性地形成在与所述栅极绝缘膜接触的所述第二导电型基底层的表面上的第一导电型源极层; 形成在所述沟槽中的栅电极,通过所述栅极绝缘膜与所述第一导电型基极层,所述第二导电型基极层和所述第一导电型源极绝缘; 电连接到第一导电型基极层和第二导电型基极层的主电极; 以及形成在绝缘层的底部上的第一导电型或第二导电型浮动层。
    • 6. 发明授权
    • Production of isocyanate compounds
    • 异氰酸酯化合物的生产
    • US4925982A
    • 1990-05-15
    • US220887
    • 1988-06-16
    • Satoshi UranoRyuzo Mizuguchi
    • Satoshi UranoRyuzo Mizuguchi
    • C07C263/10C07C263/12C07C265/04C07C265/06
    • C07C263/10C07C263/18
    • Production of an alkenoyl isocyanate of the formula: ##STR1## wherein R is a hydrogen atom or a lower alkyl group by reacting an acrylamide of the formula: ##STR2## wherein R is as defined above with an oxalyl halide of the formula(COX).sub.2wherein X is a halogen atom to give a reaction mixture comprising a haloalkanoyl isocyanate of the formula: ##STR3## wherein R and X are each as defined above with or without the alkenoyl isocyanate, recovering the haloalkanoyl isocyanate and, when present, the alkenoyl isocyanate separately from the reaction mixture and reacting the recovered haloalkanoyl isocyanate with a hydrogen halide-eliminating agent to give the alkenoyl isocyanate.
    • 制备下式的烯酰基异氰酸酯:其中R是氢原子或低级烷基,通过下式的丙烯酰胺与式(COX)的草酰卤反应,其中R如上定义, 2其中X是卤素原子,得到包含下式的卤代烷酰基异氰酸酯的反应混合物:其中R和X各自如上所定义或不与链烯酰基异氰酸酯反应,回收卤代烷酰基异氰酸酯,当存在烯酰基 异氰酸酯与反应混合物分开并使回收的卤代烷酰基异氰酸酯与卤化氢消除剂反应,得到烯酰基异氰酸酯。