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1. 发明授权

US4465529A Method of producing semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US4465529A
公开(公告)日：1984-08-14
申请号：US385137
申请日：1982-06-04
申请人： Hideaki Arima , Tadashi Nishimura , Masahiro Yoneda , Takaaki Fukumoto , Yoshihiro Hirata
发明人： Hideaki Arima , Tadashi Nishimura , Masahiro Yoneda , Takaaki Fukumoto , Yoshihiro Hirata
IPC分类号： C30B31/18 , H01L21/223 , H01L21/225 , H01L21/263 , H01L21/268
CPC分类号： H01L21/2254 , C30B31/185 , H01L21/223 , H01L21/2636 , H01L21/268
摘要： A method for producing an impurity containing semiconductor substrate includes depositing an impurity on selected portions of the substrate by placing a charge on the substrate and converting a gaseous impurity containing atmosphere into a plasma. The impurity may then be diffused into the substrate to a controlled and shallow depth by employing a laser or the like to selectively irradiate the impurity.
摘要翻译：一种用于制造含杂质的半导体衬底的方法包括通过在衬底上放置电荷并将含气态杂质的气氛转化成等离子体来在衬底的选定部分上沉积杂质。然后可以通过使用激光等来选择性地照射杂质，将杂质扩散到衬底中至受控和浅的深度。

2. 发明授权

US5935314A Inorganic filler, epoxy resin composition, and semiconductor device 失效
标题翻译：无机填料，环氧树脂组合物和半导体器件
公开(公告)号：US5935314A
公开(公告)日：1999-08-10
申请号：US919344
申请日：1997-08-28
申请人： Noriaki Higuchi , Takaaki Fukumoto , Toshio Shiobara , Eiichi Asano , Kazutoshi Tomiyoshi
发明人： Noriaki Higuchi , Takaaki Fukumoto , Toshio Shiobara , Eiichi Asano , Kazutoshi Tomiyoshi
IPC分类号： C08K3/00 , C08K7/16 , C08K7/18 , C08L63/00 , C09C1/30 , C09C3/04 , H01L23/29 , H01L23/31 , C04B14/00
CPC分类号： H01L23/295 , C08K7/18 , C09C1/3009 , C09C3/04 , C01P2004/32 , C01P2004/61 , C01P2006/12 , C01P2006/22 , C01P2006/80 , H01L2924/0002 , Y10T428/12528
摘要： By removing a fraction of fine particles having a particle size of less than 2 .mu.m from starting inorganic filler particles having a mean particle size of 10-50 .mu.m and adding thereto particles having a mean particle size of 0.1-2 .mu.m and a specific surface area of 3-10 m.sup.2 /g (BET), there is obtained a particulate inorganic filler having a mean particle size of 5-40 .mu.m. When a large amount of the inorganic filler is loaded in an epoxy resin composition, the composition maintains a low melt viscosity enough to mold and is effective for encapsulating a semiconductor device without causing die pad deformation and wire deformation. The encapsulated semiconductor device is highly reliable.
摘要翻译：通过从平均粒径为10-50μm的起始无机填料颗粒中除去一小部分粒径小于2μm的细颗粒，并加入平均粒度为0.1-2μm的颗粒和比表面积为3-10m2 / g（BET），得到平均粒径为5-40μm的颗粒状无机填料。当大量的无机填料装载在环氧树脂组合物中时，该组合物保持足够低的熔体粘度以成型，并且对于封装半导体器件而言不会引起芯片焊盘的变形和焊丝变形。封装的半导体器件是高度可靠的。

3. 发明授权

US5336356A Apparatus for treating the surface of a semiconductor substrate 失效
标题翻译：用于处理半导体衬底的表面的设备
公开(公告)号：US5336356A
公开(公告)日：1994-08-09
申请号：US914326
申请日：1992-07-17
申请人： Cozy Ban , Toshiaki Ohmori , Takaaki Fukumoto
发明人： Cozy Ban , Toshiaki Ohmori , Takaaki Fukumoto
IPC分类号： H01L21/302 , H01L21/304 , H01L21/306 , H01L21/00
CPC分类号： H01L21/02049
摘要： In an apparatus for treating the surface of a semiconductor substrate, hydrogen fluoride is dissolved in a nonaqueous solvent, ionizing anhydrous hydrogen fluoride, and the solution is vaporized. The vapor of the solution is introduced onto the surface of the semiconductor in a reaction chamber to treat this surface. The semiconductor substrate can be subjected to treatments, such as cleaning and etching, without producing reactions products on the surface.
摘要翻译：在用于处理半导体衬底的表面的设备中，将氟化氢溶解在非水溶剂中，使无水氟化氢离子化，并使溶液蒸发。将溶液的蒸气引入到反应室中的半导体表面上以处理该表面。可以对半导体衬底进行诸如清洁和蚀刻的处理，而不会在表面上产生反应产物。

4. 发明授权

US5283989A Apparatus for polishing an article with frozen particles 失效
标题翻译：用冷冻颗粒抛光物品的装置
公开(公告)号：US5283989A
公开(公告)日：1994-02-08
申请号：US577536
申请日：1990-09-05
申请人： Akiko Hisasue , Itaru Kanno , Takaaki Fukumoto
发明人： Akiko Hisasue , Itaru Kanno , Takaaki Fukumoto
IPC分类号： B24C1/00 , B24C7/00 , B24C11/00 , H01L21/304 , B24R7/00
CPC分类号： B24C1/003 , B24C11/00 , B24C7/00
摘要： A novel and improved polishing apparatus is disclosed which employs ice particles as an abrasive material, the hardness of which can be changed so as to match that of an article being polished for performing polishing operation in a most efficient manner without impairing or marring the polished surface of the article. To this end, the polishing apparatus includes a freezing vessel defining therein an ice particle producing chamber, a coolant supply nozzle mounted on the freezing vessel and connected with a coolant source through a coolant supply line for spraying a coolant into the ice particle producing chamber to form a freezing atmosphere, a liquid supply nozzle mounted on the freezing vessel and connected with a liquid supply for spraying a liquid into the ice particle producing chamber so that the liquid thus sprayed is cooled and freezed by the freezing atmosphere to produce superfine ice particles, a particle hardness adjuster for adjusting the hardness of the ice particles to be produced so as to match the hardness of an article being polished, and an injection nozzle for injecting the ice particles towards a surface of the article for polishing thereof. Preferably, the particle hardness adjuster comprises a flow control valve which is disposed on the coolant supply line between the coolant supply nozzle and the coolant source for adjusting and changing the amount of coolant sprayed therefrom into the ice particle producing chamber so as to control the temperature therein.
摘要翻译：公开了一种新颖且改进的抛光装置，其使用冰颗粒作为研磨材料，其硬度可以改变，以便与被抛光的制品的硬度相匹配，以最有效的方式进行抛光操作，而不损害或磨损抛光表面的文章。为此，抛光装置包括在其中限定冰颗粒产生室的冷冻机，安装在冷冻容器上的冷却剂供应喷嘴，并通过冷却剂供应管线与冷却剂源连接，用于将冷却剂喷射到冰颗粒产生室中形成冷冻气氛，安装在冷冻容器上的液体供应喷嘴，并与用于将液体喷射到冰粒产生室中的液体供应源连接，使得如此喷射的液体被冷冻气氛冷却并冷冻以产生超细冰颗粒，粒子硬度调节器，用于调节要制造的冰颗粒的硬度以匹配待抛光的制品的硬度;以及喷嘴，用于将冰颗粒注射到制品的表面以进行抛光。优选地，颗粒硬度调节器包括流量控制阀，该流量控制阀设置在冷却剂供应喷嘴和冷却剂源之间的冷却剂供应管线上，用于调节和改变从其喷射到冰颗粒产生室中的冷却剂的量，以便控制温度其中。

5. 发明授权

US5186907A Apparatus for treating organic waste gas 失效
标题翻译：用于处理有机废气的装置
公开(公告)号：US5186907A
公开(公告)日：1993-02-16
申请号：US149155
申请日：1988-01-27
申请人： Motonori Yanagi , Masaharu Hama , Takaaki Fukumoto , Miki Tsukaguchi
发明人： Motonori Yanagi , Masaharu Hama , Takaaki Fukumoto , Miki Tsukaguchi
IPC分类号： B01D53/72 , B01J19/12 , C01B13/10
CPC分类号： C01B13/10 , B01D53/72 , B01J19/123
摘要： An apparatus for treating an organic waste gas has an oxidizing means for contacting the waste gas with an oxidizing agent to effect primary oxidation and form a primary oxidation product. An ultraviolet wave generator inadiates the primary reaction product with UV light in the near UV range to effect secondary oxidation of the primary reaction product.
摘要翻译：一种用于处理有机废气的设备具有用于使废气与氧化剂接触以实现初级氧化并形成初级氧化产物的氧化装置。紫外线发生器在近紫外范围内用紫外线照射初级反应产物，以使初级反应产物二次氧化。

6. 发明授权

US5025597A Processing apparatus for semiconductor wafers 失效
标题翻译：半导体晶圆加工装置
公开(公告)号：US5025597A
公开(公告)日：1991-06-25
申请号：US470226
申请日：1990-01-25
申请人： Masuo Tada , Takeki Hata , Takaaki Fukumoto , Toshiaki Ohmori
发明人： Masuo Tada , Takeki Hata , Takaaki Fukumoto , Toshiaki Ohmori
IPC分类号： B08B7/00 , B24C1/00 , B24C3/32 , F25C1/00 , H01L21/306 , H01L21/322
CPC分类号： H01L21/02043 , B08B7/0092 , B24C1/003 , B24C3/322 , F25C1/00 , H01L21/3221 , Y10S438/906
摘要： A cleaning method and a gettering method for semiconductor wafers comprises blasting frozen particles at the surface of a semiconductor wafer. A processing apparatus for a semiconductor wafer comprises means for forming ultrafine frozen particles and means for blasting the frozen particles at the surface of a semiconductor wafer to perform either the gettering or the cleaning of the semiconductor wafer. In one form of the invention, the frozen particles are formed by spraying a mist of water into a chamber partially filled with liquid nitrogen, which freezes the mist to form ice particles. In another form of the invention, the frozen particles are formed by spraying a mist of water into a chamber containing cold nitrogen gas, which freezes the mist to form ice particles. In another form of the invention, the frozen particles are formed by heating water to form water vapor and introducing the water vapor into a freezing chamber containing a two-phase mixture of a coolant which freezes the vapor into ultrafine particles. The frozen particles are blasted at a semiconductor wafer through a blasting nozzle by a gas such as nitrogen gas. When the frozen particles are used for gettering, they may further include abrasive particles such as silica powder.

7. 发明授权

US4941489A Carrier cleaning and drying apparatus 失效
标题翻译：载体清洗和干燥装置
公开(公告)号：US4941489A
公开(公告)日：1990-07-17
申请号：US402988
申请日：1989-09-05
申请人： Yasuo Kamimura , Toshiaki Ohmori , Motonori Yanagi , Takaaki Fukumoto , Masaharu Hama
发明人： Yasuo Kamimura , Toshiaki Ohmori , Motonori Yanagi , Takaaki Fukumoto , Masaharu Hama
IPC分类号： B08B3/02 , B08B3/10 , H01L21/00
CPC分类号： H01L21/67028 , B08B3/02 , B08B3/10 , Y10S134/902
摘要： A carrier cleaning and drying apparatus for cleaning and drying a wafer processing carrier has a cleaning tank for accommodating the carrier and a high-pressure injection nozzle disposed in an upper portion of the cleaning tank and for injecting a pressurized cleaning solution. This high-pressure injection nozzle is moved within a plane and the cleaning solution is injected at high pressure therefrom, thereby removing dust adhering to the inner and outer surfaces of the carrier by means of the force of injection. A supporting and rotating mechanism portion is also provided which, during cleaning of the carrier, swings the carrier at a predetermined angle, and, after cleaning, effects drying by spinning the carrier at high speed.
摘要翻译：用于清洁和干燥晶片处理载体的载体清洁和干燥装置具有用于容纳载体的清洗槽和设置在清洗槽的上部并用于注入加压清洗溶液的高压喷嘴。该高压注射喷嘴在平面内移动，并且清洗溶液以高压注射，从而通过注射力除去附着在载体的内表面和外表面上的灰尘。还提供支撑和旋转机构部分，其在载体的清洁期间以预定角度摆动载体，并且在清洁之后，通过高速旋转载体来实现干燥。

8. 发明授权

US4719088A Apparatus for removing at least one acidic component from a gas 失效
标题翻译：用于从气体中去除至少一种酸性组分的装置
公开(公告)号：US4719088A
公开(公告)日：1988-01-12
申请号：US828124
申请日：1986-02-11
申请人： Fumio Itoh , Tutomu Sasaki , Ikuhisa Kanoh , Takaaki Fukumoto
发明人： Fumio Itoh , Tutomu Sasaki , Ikuhisa Kanoh , Takaaki Fukumoto
IPC分类号： B01D53/40 , B01D53/14 , B01D53/34 , B01D53/50 , B01D53/52 , B01D53/54 , B01D53/68 , B01D53/74 , B01D53/77 , G05D9/00 , B01D50/00
CPC分类号： B01D53/74 , B01D53/34 , B01D53/526 , B01D53/68
摘要： Apparatus for removing an acidic component from a gas comprising two absorption columns for washing a crude gas by using two concentrations of alkali-containing aqueous solutions. The alkali-containing solution used in the first step has a pH of 6-13 and the solution used in the second step has a 0.3-2.5 N concentration. A specific gravity control device is used to control the concentration of the solution circulated for the second step. A pH control device is used to control the pH of the solution circulated for the first step. The pH control device controls a valve which regulates the addition of the second step solution into the tank of the first step solution as needed.
摘要翻译：用于通过使用两种浓度的含碱水溶液从气体中除去酸性组分的装置，包括用于洗涤粗气体的两个吸收塔。第一工序中使用的含碱溶液的pH为6〜13，第二工序中使用的溶液的浓度为0.3〜2.5N。使用比重控制装置来控制第二步循环的溶液的浓度。 pH控制装置用于控制第一步循环的溶液的pH值。 pH控制装置控制根据需要调节将第二步溶液添加到第一步骤溶液槽中的阀。

9. 发明授权

US06221323B1 Method for producing super clean air 失效
标题翻译：超洁净空气的生产方法
公开(公告)号：US06221323B1
公开(公告)日：2001-04-24
申请号：US09027486
申请日：1998-02-20
申请人： Masashi Mizuno , Masuo Tada , Norio Yamazaki , Takaaki Fukumoto
发明人： Masashi Mizuno , Masuo Tada , Norio Yamazaki , Takaaki Fukumoto
IPC分类号： B01D5300
CPC分类号： F24F3/16 , F24F2003/1621
摘要： Super clean air having therein chemical components—such as hydrocarbons, organic halogens, acidic gases, basic gases, aldehydes, nitrogen oxides, and H2O (that is, all components other than oxygen, nitrogen, and noble gases—the types of chemical components differ depending on the source of the air)—in concentrations no more than 1 ppb and a dew point lower than −40° C., is obtained from the atmosphere by low-temperature adsorption treatment in stages at temperatures ranging from −40° C. to −180° C. Material air collected from the atmosphere is pretreated in a room-temperature adsorption step to remove moisture and carbon dioxide. The pretreated air is then low-temperature adsorption treated by absorbents in a plurality of steps to adsorb the gaseous chemical components, the treatment temperature being lower in each succeeding step. Treatment at −40° C. may remove, for example, HF, SO2, and/or NH3. Treatment at −100° C. may remove, for example, SF6, C2F6, H2S, and/or N2O. Treatment at −150° C. may remove, for example, CF4, NO, CH4, and/or CO. The last treatment step produces super clean air suitable for use in processing semiconductor wafers.
摘要翻译：其中具有化学成分的超净空气，如碳氢化合物，有机卤素，酸性气体，碱性气体，醛类，氮氧化物和H2O（即除氧气，氮气和稀有气体之外的所有组分） - 化学成分的类型不同取决于空气源） - 浓度不超过1ppb，露点低于-40℃，通过在-40℃的温度下分级进行低温吸附处理从大气中获得。至-180℃。从大气中收集的物料空气在室温吸附步骤中预处理以除去水分和二氧化碳。然后将经预处理的空气以多个步骤对吸收剂进行低温吸附处理，以吸附气态化学成分，后续处理温度较低。在-40℃下的处理可以除去例如HF，SO 2和/或NH 3。在-100℃下的处理可以除去例如SF 6，C 2 F 6，H 2 S和/或N 2 O。在-150℃下的处理可以除去例如CF 4，NO，CH 4和/或CO。最后的处理步骤产生适合用于处理半导体晶片的超净空气。

10. 发明授权

US5752985A Clean room having an air conditioning system 失效
标题翻译：洁净室设有空调系统
公开(公告)号：US5752985A
公开(公告)日：1998-05-19
申请号：US833429
申请日：1997-04-07
申请人： Hitoshi Nagafune , Takaaki Fukumoto , Hakushi Shibuya , Koji Ezaki
发明人： Hitoshi Nagafune , Takaaki Fukumoto , Hakushi Shibuya , Koji Ezaki
IPC分类号： E04H5/02 , F24F3/16 , F24F7/06 , H01L21/02 , B01L1/04 , B01D50/00
CPC分类号： F24F3/161 , Y10T29/41
摘要： Apparatus comprising an outside-air conditioner 2, an operation zone 4, a ceiling filter 8 such as an HEPA or ULPA filter, a fan filter unit 9 comprising a chemical filter and a draft fan arranged only on an overhead carrying apparatus 5 and storing apparatus 6 arranged in the operation zone 4 in a clean room 1 chemical mist causing chemical contamination is removed to the carrying apparatus 5 and storing apparatus 6.
摘要翻译：包括外部空气调节器2，操作区域4，诸如HEPA或ULPA过滤器的顶棚过滤器8的装置，包括仅在架空运输装置5上设置的化学过滤器和通风扇的风扇过滤器单元9和存储装置 6，在清洁室内配置在操作区域4中，导致化学污染的化学雾被移除到运送装置5和存储装置6。

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