专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4976206A Mechanism for the removal of slag in incineration plants 失效
标题翻译：焚烧厂除渣机理
公开(公告)号：US4976206A
公开(公告)日：1990-12-11
申请号：US422966
申请日：1989-10-18
申请人： Hansruedi Steiner , Hans Weber
发明人： Hansruedi Steiner , Hans Weber
IPC分类号： F23J1/02
CPC分类号： F23J1/02 , F23J2900/01021
摘要： A mechanism for the removal of incombustible residues from an incineration plant includes a slag shaft, a slag tank positioned under a mouth of the slag shaft and filled with water extending up to the mouth of the shaft. The incombustible residues dropping from the incineration plant furnace grate through the slag shaft collect in the slag tank and are discharged therefrom by a pusher plate via an upwardly sloping discharge path. The pusher plate is in operative connection with two thrust piston drives via two thrust rods and two rocking levers. The joint connecting the thrust rod with the rocking lever is arranged in such a way that it is not immersed in the water bath either in the rear position of the pusher plate or in the discharge position of the pusher plate. Through the direct coupling to the joint, the thrust rod and the rocking lever can operate in the same vertical plane, so that no additional moments are exerted on the rocking shaft. This leads to a longer life for the lint and also to increased operational reliability and easier maintenance.
摘要翻译：用于从焚化厂除去不可燃残余物的机构包括炉渣杆，位于炉渣杆口下方的炉渣罐，并且填充有直到轴的口部延伸的水。从焚烧炉炉排落下的不燃物残渣通过炉渣收集在渣槽中，并通过向上倾斜的排放路径由推动板排出。推动板通过两个推力杆和两个摇杆与两个推力活塞驱动器操作连接。将推杆与摆动杆连接的连接部配置成不会在推动板的后方位置或推动板的排出位置处浸入水浴中。通过与接头的直接连接，推杆和摇杆可以在相同的垂直平面上运行，从而不会在摇摆轴上施加额外的力矩。这样可以延长棉绒的使用寿命，同时提高操作的可靠性和更容易的维护。

2. 发明授权

US08901642B2 Charge compensation semiconductor device 有权
标题翻译：充电补偿半导体器件
公开(公告)号：US08901642B2
公开(公告)日：2014-12-02
申请号：US13414037
申请日：2012-03-07
申请人： Hans Weber , Franz Hirler
发明人： Hans Weber , Franz Hirler
IPC分类号： H01L29/78
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/1095 , H01L29/167 , H01L29/32 , H01L29/407 , H01L29/408 , H01L29/41766 , H01L29/66727
摘要： A semiconductor device includes a semiconductor body having a first surface defining a vertical direction and a source metallization arranged on the first surface. In a vertical cross-section the semiconductor body further includes: a drift region of a first conductivity type; at least two compensation regions of a second conductivity type each of which forms a pn-junction with the drift region and is in low resistive electric connection with the source metallization; a drain region of the first conductivity type having a maximum doping concentration higher than a maximum doping concentration of the drift region, and a third semiconductor layer of the first conductivity type arranged between the drift region and the drain region and includes at least one of a floating field plate and a floating semiconductor region of the second conductivity type forming a pn-junction with the third semiconductor layer.
摘要翻译：半导体器件包括具有限定垂直方向的第一表面和布置在第一表面上的源极金属化的半导体本体。在垂直横截面中，半导体主体还包括：第一导电类型的漂移区; 至少两个第二导电类型的补偿区域，每个补偿区域与漂移区域形成pn结并与源极金属化处于低电阻电连接; 具有高于漂移区的最大掺杂浓度的最大掺杂浓度的第一导电类型的漏极区和布置在漂移区和漏极区之间的第一导电类型的第三半导体层，并且包括以下中的至少一个：浮置场板和第二导电类型的浮置半导体区域形成与第三半导体层的pn结。

3. 发明申请

US20140001552A1 Super Junction Semiconductor Device Comprising a Cell Area and an Edge Area 有权
标题翻译：包括单元区域和边缘区域的超级结半导体器件
公开(公告)号：US20140001552A1
公开(公告)日：2014-01-02
申请号：US13539973
申请日：2012-07-02
申请人： Franz Hirler , Hans Weber , Hans-Joachim Schulze , Uwe Wahl
发明人： Franz Hirler , Hans Weber , Hans-Joachim Schulze , Uwe Wahl
IPC分类号： H01L29/772 , H01L21/20 , H01L29/02
CPC分类号： H01L29/66712 , H01L29/0634 , H01L29/0649 , H01L29/0653 , H01L29/0696 , H01L29/1095 , H01L29/161 , H01L29/167 , H01L29/408 , H01L29/7395 , H01L29/7811 , H01L29/8611
摘要： A drift layer of a super junction semiconductor device includes first portions of a first conductivity type and second portions of a second conductivity type opposite to the first conductivity type. The first and second portions are formed both in a cell area and in an edge area surrounding the cell area, wherein an on-state or forward current through the drift layer flows through the first portions in the cell area. At least one of the first and second portions other than the first portions in the cell area includes an auxiliary structure or contains auxiliary impurities to locally reduce the avalanche rate. Locally reducing the avalanche rate increases the total voltage blocking capability of the super junction semiconductor device.
摘要翻译：超结半导体器件的漂移层包括第一导电类型的第一部分和与第一导电类型相反的第二导电类型的第二部分。第一和第二部分在单元区域和围绕单元区域的边缘区域中形成，其中通过漂移层的导通状态或正向电流流过单元区域中的第一部分。电池区域中除了第一部分之外的第一和第二部分中的至少一个包括辅助结构或包含辅助杂质以局部降低雪崩率。本地降低雪崩率提高了超结半导体器件的总电压阻断能力。

4. 发明申请

US20130193525A1 Semiconductor Arrangement with Active Drift Zone 有权
公开(公告)号：US20130193525A1
公开(公告)日：2013-08-01
申请号：US13362038
申请日：2012-01-31
申请人： Rolf Weis , Gerald Deboy , Michael Treu , Armin Willmeroth , Hans Weber
发明人： Rolf Weis , Gerald Deboy , Michael Treu , Armin Willmeroth , Hans Weber
IPC分类号： H01L27/06
CPC分类号： H01L27/0207 , H01L21/84 , H01L21/845 , H01L27/06 , H01L27/0629 , H01L27/088 , H01L27/0886 , H01L27/1211 , H01L29/4236 , H01L29/78 , H03K17/063 , H03K17/102
摘要： A semiconductor device arrangement includes a first semiconductor device having a load path and a plurality of second semiconductor devices, each having a load path between a first and a second load terminal and a control terminal. The second semiconductor devices have their load paths connected in series and connected in series to the load path of the first semiconductor device. Each of the second semiconductor devices has its control terminal connected to the load terminal of one of the other second semiconductor devices, and one of the second semiconductor devices has its control terminal connected to one of the load terminals of the first semiconductor device. Each of the second semiconductor devices has at least one device characteristic. At least one device characteristic of at least one of the second semiconductor devices is different from the corresponding device characteristic of others of the second semiconductor devices.

5. 发明申请

US20130154030A1 Semiconductor Device with Self-Charging Field Electrodes and Compensation Regions 有权
标题翻译：具有自充电场电极和补偿区域的半导体器件
公开(公告)号：US20130154030A1
公开(公告)日：2013-06-20
申请号：US13331843
申请日：2011-12-20
申请人： Hans Weber
发明人： Hans Weber
IPC分类号： H01L29/06 , H01L29/872 , H01L29/78
CPC分类号： H01L29/872 , H01L29/0623 , H01L29/0634 , H01L29/0653 , H01L29/1095 , H01L29/407 , H01L29/7802 , H01L29/7813 , H01L29/861
摘要： A semiconductor device includes a drift region of a first doping type, a junction between the drift region and a device region, a compensation region of a second doping type, and at least one field electrode structure arranged between the drift region and the compensation region. The at least one field electrode includes a field electrode and a field electrode dielectric adjoining the field electrode. The field electrode dielectric is arranged between the field electrode and the drift region and between the field electrode and the compensation. The field electrode dielectric includes a first opening through which the field electrode is coupled to drift region and a second opening through which the field electrode is coupled to the compensation region.
摘要翻译：半导体器件包括第一掺杂类型的漂移区域，漂移区域和器件区域之间的结，第二掺杂类型的补偿区域以及布置在漂移区域和补偿区域之间的至少一个场电极结构。所述至少一个场电极包括场电极和邻接所述场电极的场电极电介质。场电极介质布置在场电极和漂移区之间以及场电极和补偿之间。场电极电介质包括第一开口，场电极通过该第一开口耦合到漂移区，第二开口通过该场电极耦合到补偿区。

6. 发明申请

US20130082322A1 SEMICONDUCTOR DEVICE WITH SELF-CHARGING FIELD ELECTRODES 有权
标题翻译：具有自充电现场电极的半导体器件
公开(公告)号：US20130082322A1
公开(公告)日：2013-04-04
申请号：US13250013
申请日：2011-09-30
申请人： Hans Weber , Franz Hirler , Stefan Gamerith
发明人： Hans Weber , Franz Hirler , Stefan Gamerith
IPC分类号： H01L21/336 , H01L21/28
CPC分类号： H01L29/872 , H01L29/0653 , H01L29/407 , H01L29/7813 , H01L29/868
摘要： Disclosed is a semiconductor device including a drift region of a first doping type, a junction between the drift region and a device region, and at least one field electrode structure in the drift region. The field electrode structure includes a field electrode, a field electrode dielectric adjoining the field electrode and arranged between the field electrode and the drift region, and having an opening, at least one of a field stop region and a generation region.
摘要翻译：公开了一种半导体器件，其包括第一掺杂类型的漂移区域，漂移区域和器件区域之间的结以及漂移区域中的至少一个场电极结构。场电极结构包括场电极，与场电极相邻并且设置在场电极和漂移区之间的场电极电介质，并且具有开场，场停止区和发生区中的至少一个。

7. 发明申请

US20110147817A1 SEMICONDUCTOR COMPONENT HAVING AN OXIDE LAYER 审中-公开
标题翻译：具有氧化物层的半导体元件
公开(公告)号：US20110147817A1
公开(公告)日：2011-06-23
申请号：US12640974
申请日：2009-12-17
申请人： Hans-Joachim Schulze , Helmut Strack , Hans Weber
发明人： Hans-Joachim Schulze , Helmut Strack , Hans Weber
IPC分类号： H01L29/78 , H01L29/02 , H01L21/336 , H01L21/02
CPC分类号： H01L29/7813 , H01L21/02126 , H01L21/02238 , H01L21/76251 , H01L28/40 , H01L29/0649 , H01L29/0653 , H01L29/407 , H01L29/7803 , H01L29/7804 , H01L29/861 , H01L29/872
摘要： Semiconductor component having an oxide layer. One embodiment includes a first semiconductor region and a second semiconductor region. An oxide layer is arranged between the first and second semiconductor region. The first semiconductor region and the oxide layer form a first semiconductor-oxide interface. The second semiconductor region and the oxide layer form a second semiconductor-oxide interface. The oxide layer has a chlorine concentration, the chlorine concentration having a first maximum in the region of the first semiconductor-oxide interface, and having a second maximum in the region of the second semiconductor-oxide interface.
摘要翻译：具有氧化物层的半导体部件。一个实施例包括第一半导体区域和第二半导体区域。氧化物层布置在第一和第二半导体区域之间。第一半导体区域和氧化物层形成第一半导体 - 氧化物界面。第二半导体区域和氧化物层形成第二半导体 - 氧化物界面。氧化物层具有氯浓度，氯浓度在第一半导体 - 氧化物界面的区域具有第一最大值，并且在第二半导体 - 氧化物界面的区域具有第二最大值。

8. 发明申请

US20110101451A1 SEMICONDUCTOR COMPONENT STRUCTURE WITH VERTICAL DIELECTRIC LAYERS 有权
标题翻译：半导体元件结构与垂直电介质层
公开(公告)号：US20110101451A1
公开(公告)日：2011-05-05
申请号：US12984934
申请日：2011-01-05
申请人： Anton Mauder , Stefan Sedlmaier , Ralf Erichsen , Hans Weber , Oliver Haeberlen , Franz Hirler
发明人： Anton Mauder , Stefan Sedlmaier , Ralf Erichsen , Hans Weber , Oliver Haeberlen , Franz Hirler
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L21/76224 , H01L27/0629 , H01L29/0646 , H01L29/0653 , H01L29/0878 , H01L29/407 , H01L29/66734 , H01L29/7804
摘要： A semiconductor component having a semiconductor body having a first and a second side, an edge and an edge region adjacent to the edge in a lateral direction is described.
摘要翻译：描述了具有半导体本体的半导体部件，该半导体本体具有第一和第二侧面，边缘和与横向方向上的边缘相邻的边缘区域。

9. 发明授权

US07303961B2 Method for producing a junction region between a trench and a semiconductor zone surrounding the trench 有权
标题翻译：用于在沟槽和围绕沟槽的半导体区域之间产生结区的方法
公开(公告)号：US07303961B2
公开(公告)日：2007-12-04
申请号：US11027496
申请日：2004-12-30
申请人： Hans Weber , Gerhard Silvester Neugschwandtner , Martin Poelzl
发明人： Hans Weber , Gerhard Silvester Neugschwandtner , Martin Poelzl
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L29/407 , H01L29/41766 , H01L29/4232 , H01L29/42368 , H01L29/4238
摘要： A method for producing a junction region (2, 5, 6, 7) between a trench (3) and a semiconductor zone (2) surrounding the trench (3) in a trench semiconductor device (1) has the following steps: application of an oxidation barrier layer (15) to an upper part (O) of the inner walls of the trench (3), and production of a first oxide layer (7) on a lower part (U) of the inner walls, said lower part not being covered by the oxidation barrier layer (15), by means of thermal oxidation of the uncovered (U) part of the inner walls.
摘要翻译：在沟槽半导体器件（1）中，在沟槽（3）和围绕沟槽（3）的半导体区域（2）之间产生结区域（2,5,6,7）的方法具有以下步骤：应用氧化阻挡层（15）到所述沟槽（3）的内壁的上部（O），以及在所述内壁的下部（U）上产生第一氧化物层（7），所述下部不被氧化阻挡层（15）覆盖，通过内壁的未覆盖（U）部分的热氧化。

10. 发明申请

US20060164439A1 SYSTEM AND METHOD FOR INSERTING CONTENT INTO AN IMAGE SEQUENCE 审中-公开
标题翻译：将内容插入图像序列的系统和方法
公开(公告)号：US20060164439A1
公开(公告)日：2006-07-27
申请号：US11278722
申请日：2006-04-05
申请人： John Dengler , Erik Garci , Brian Cox , Kenneth Tolman , Hans Weber , Gerard Hall
发明人： John Dengler , Erik Garci , Brian Cox , Kenneth Tolman , Hans Weber , Gerard Hall
IPC分类号： G09G5/00
CPC分类号： G06T15/20 , H04N5/272 , H04N5/2723
摘要： Systems and methods for augmenting an image sequence with content are disclosed. A system may include a character generator, a graphics frame buffer and a graphics insertion system. The character generator may generate pixel block content. The graphics frame buffer may be in communication with the character generator and store the pixel block content. The graphics insertion system may be in communication with the first graphics frame buffer. The graphics insertion system may be used to retrieve the pixel block content from the first graphics frame buffer and modify an image sequence with an insert graphic based on the pixel block content.
摘要翻译：公开了用于增加具有内容的图像序列的系统和方法。系统可以包括字符发生器，图形帧缓冲器和图形插入系统。字符生成器可以生成像素块内容。图形帧缓冲器可以与字符发生器通信并存储像素块内容。图形插入系统可以与第一图形帧缓冲器通信。图形插入系统可以用于从第一图形帧缓冲器检索像素块内容，并且基于像素块内容使用插入图形修改图像序列。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式