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1. 发明授权

US5242533A Method of structuring a semiconductor chip 失效
标题翻译：结晶半导体芯片的方法
公开(公告)号：US5242533A
公开(公告)日：1993-09-07
申请号：US828033
申请日：1992-01-30
申请人： Hans-Peter Trah , Guenther Findler , Joerg Muchow
发明人： Hans-Peter Trah , Guenther Findler , Joerg Muchow
IPC分类号： H01L21/22 , H01L21/302 , H01L21/306 , H01L21/3063 , H01L21/3065 , H01L21/308 , H01L29/84
CPC分类号： H01L21/30604 , H01L21/3063 , H01L21/3081 , Y10S438/924
摘要： Processes are proposed for structuring monocrystalline semiconductor substrates provided with a basic doping, in particular silicon substrates with a (100) or (110) crystal orientation. In this process, at least one main surface of the semiconductor substrate is passivated by means of a structured masking layer, and in an etching step etching into the semiconductor substrate is done anisotropically through openings in the masking layer. It is proposed that as the masking layer (12), a structured, preferably monocrystalline, layer of the basic material of the semiconductor substrate be used, which is doped such that a pn junction is produced between the masking layer (12) and the semiconductor substrate (10), the junction being polarized in the depletion direction and serving as an etch stop. It is also proposed that the semiconductor substrate (10) be formed of a substrate (11) and at least one layer (13), applied thereon, with buried zones (16), with pn junctions being produced between the zones (16) and the substrate (11). Zones (16) that are electrically insulated from one another and the semiconductor substrate (10) are electrically bonded, so that the pn junctions are polarized in the depletion direction and serve as an etch stop for deep etching.
摘要翻译：提出了用于构造设置有基本掺杂的单晶半导体衬底的工艺，特别是具有（100）或（110）晶体取向的硅衬底。在该工艺中，半导体衬底的至少一个主表面通过结构化掩模层钝化，并且在蚀刻步骤中，通过掩模层中的开口各向异性地进行蚀刻到半导体衬底中。提出，作为掩模层（12），使用半导体衬底的基本材料的结构化的，优选单晶层，其被掺杂以使得在掩模层（12）和半导体层（12）之间产生pn结衬底（10），所述结在耗尽方向上极化并用作蚀刻停止。还提出半导体衬底（10）由衬底（11）和其上施加有至少一个层（13）形成，具有掩埋区域（16），在区域（16）和基板（11）。彼此电绝缘的区域（16）和半导体衬底（10）电连接，使得pn结在耗尽方向上极化，并用作深刻蚀的蚀刻停止。

2. 发明授权

US5282926A Method of anisotropically etching monocrystalline, disk-shaped wafers 失效
标题翻译：各向异性蚀刻单晶圆盘状晶片的方法
公开(公告)号：US5282926A
公开(公告)日：1994-02-01
申请号：US748710
申请日：1991-08-22
申请人： Hans-Peter Trah , Guenther Findler
发明人： Hans-Peter Trah , Guenther Findler
IPC分类号： C23F1/00 , C23F1/24 , C30B33/08 , G03F1/20 , G03F1/22 , H01L21/306 , H01L21/00
CPC分类号： G03F1/20 , G03F1/22
摘要： A method for anisotropically etching recesses in a monocrystalline disk-shaped wafer is proposed, by which structural elements such as membranes or through openings can be made in the wafer. To this end, a mask layer is applied to a first surface of the wafer and subsequently structured by making at least one opening in the mask layer. The dimensioning of the at least one opening, and its orientation with respect to the crystal orientation of the wafer and to the anisotropic properties of the wafer material, are selected such that the desired size and shape of the area of the recess or outlet hole are attained by anisotropic etching into the wafer through the at least one opening in the mask layer and by purposeful underetching of the mask layer.
摘要翻译：提出了一种用于各向异性蚀刻单晶盘状晶片中的凹槽的方法，通过该方法可以在晶片中制造诸如膜或通孔的结构元件。为此，将掩模层施加到晶片的第一表面，并且随后通过在掩模层中形成至少一个开口来构造掩模层。选择至少一个开口的尺寸及其相对于晶片的晶体取向的方向和晶片材料的各向异性特性，使得凹槽或出口孔的所需尺寸和形状为通过通过掩模层中的至少一个开口对晶片进行各向异性蚀刻，并且通过有目的地去除掩模层而获得。

3. 发明授权

US5071510A Process for anisotropic etching of silicon plates 失效
标题翻译：硅板的异相蚀刻工艺
公开(公告)号：US5071510A
公开(公告)日：1991-12-10
申请号：US586803
申请日：1990-09-24
申请人： Guenther Findler , Horst Muenzel
发明人： Guenther Findler , Horst Muenzel
IPC分类号： H01L21/3063 , H01L21/308
CPC分类号： H01L21/3081 , H01L21/3063 , Y10S438/928 , Y10S438/958
摘要： Electrochemical etching of silicon wafers or plates, on the front side of which a monocrystalline epitaxy layer is provided having a doping of a type opposite to the doping of the remainder of the silicon plate, so as to provide a pn or np junction, is performed with an organic photo film material of negative type and polyisoprene base serving as a passivating layer on the previously etched and metallized front (epitaxy) side. The film layer is held in place with the help of an adhesion promoting silane compound and covers the entire front side including the portions previously masked with silicon nitride or oxide. It is dried and hardened before exposure to the etchant which is used to etch the rear side of the plate until the etchant reaches the pn junction, where a small voltage bias applied to the junction from the front side assures an etch-stop. Etchants containing tetraalkylammonium hydroxide in water solution or in water-free form are preferred, with various additives as inhibitors, complexing agents and/or wetting agents.
摘要翻译：在其前侧提供具有与硅板的其余部分的掺杂相反的掺杂类型的单晶外延层以提供pn或np结的硅晶片或板的电化学蚀刻，在预蚀刻和金属化的正面（外延）侧上具有负型有机摄影薄膜材料和用作钝化层的聚异戊二烯基底。借助于增粘硅烷化合物将膜层保持在适当位置，并覆盖包括先前用氮化硅或氧化物掩蔽的部分的整个正面。在暴露于用于蚀刻板的后侧的蚀刻剂之前将其干燥和硬化，直到蚀刻剂到达pn结，其中从前侧施加到接合处的小的电压偏置确保蚀刻停止。含有水溶液中的四烷基氢氧化铵或无水形式的蚀刻剂是优选的，具有各种添加剂作为抑制剂，络合剂和/或润湿剂。

4. 发明授权

US5452610A Mass-flow sensor 失效
标题翻译：质量流量传感器
公开(公告)号：US5452610A
公开(公告)日：1995-09-26
申请号：US202402
申请日：1994-02-25
申请人： Josef Kleinhans , Uwe Konzelmann , Eckart Reihlen , Botho Ziegenbein , Jiri Marek , Frank Bantien , Guenther Findler , Michael Offenberg
发明人： Josef Kleinhans , Uwe Konzelmann , Eckart Reihlen , Botho Ziegenbein , Jiri Marek , Frank Bantien , Guenther Findler , Michael Offenberg
IPC分类号： G01F1/68 , G01F1/684 , G01F1/692 , G01F1/86 , G01P5/12 , H01L29/84
CPC分类号： G01F1/86 , G01F1/6845
摘要： A mass-flow sensor includes a measuring element on a membrane and a media-temperature measuring element on a separate membrane. By configuring the media-temperature measuring element on a membrane, the mass-flow sensor quickly reacts to changes in the temperature of the flowing medium.
摘要翻译：质量流量传感器包括膜上的测量元件和分开的膜上的介质温度测量元件。通过将介质温度测量元件配置在膜上，质量流量传感器可快速响应流动介质的温度变化。

5. 发明授权

US5629538A Semiconductor sensor having a protective layer 失效
标题翻译：具有保护层的半导体传感器
公开(公告)号：US5629538A
公开(公告)日：1997-05-13
申请号：US433576
申请日：1995-05-03
申请人： Uwe Lipphardt , Guenther Findler , Horst Muenzel , Helmut Baumann
发明人： Uwe Lipphardt , Guenther Findler , Horst Muenzel , Helmut Baumann
IPC分类号： G01L9/04 , G01L9/00 , G01L19/06 , H01L29/84 , H01L29/82
CPC分类号： G01L19/147 , G01L19/0627 , G01L9/0042
摘要： A semiconductor chip, which is preferably designed as a pressure sensor, has on its rear side one or more depressions in which the pressure is measured by correspondingly designed diaphragms which are coupled to piezosensitive circuits. The surface of the depressions and, optionally, the rear side of the semiconductor chip are coated with a protective layer which ensures that the semiconductor is protected from aggressive media. The protective layer thereby makes it possible to use the sensor universally in acids, lyes or hot gases.
摘要翻译：优选地设计为压力传感器的半导体芯片在其后侧具有一个或多个凹陷，其中通过相应设计的隔膜耦合压敏电阻来测量压力。凹部的表面和可选地，半导体芯片的后侧涂覆有保护层，其保护半导体免受侵蚀性介质的侵害。因此，保护层使得可以将传感器普遍用于酸，碱液或热气体中。

6. 发明授权

US5553789A Orifice element 失效
标题翻译：开孔元件
公开(公告)号：US5553789A
公开(公告)日：1996-09-10
申请号：US308319
申请日：1994-09-19
申请人： Guenther Findler , Juergen Buchholz , Udo Jauernig
发明人： Guenther Findler , Juergen Buchholz , Udo Jauernig
IPC分类号： B05B1/14 , F02M61/16 , F02M61/18 , F02M69/04 , F15D1/08 , A62C2/08
CPC分类号： F02M61/1853 , F02M61/168 , F02M69/047 , F15D1/08
摘要： A silicon orifice element includes an upper silicon plate and a lower silicon plate. A liquid can be injected through injection orifices of the upper silicon plate. Recesses which form air conduits are present in the lower silicon plate. The atomization and spray angle of the liquid stream passing through the injection orifices can be influenced by certain arrangements of the air conduits.
摘要翻译：硅孔元件包括上硅板和下硅板。可以通过上硅板的注入孔注入液体。形成空气导管的凹部存在于下硅板中。通过喷射孔的液体流的雾化和喷射角度可能受到空气管道的某些布置的影响。

7. 发明授权

US5431052A Capacitive sensor 失效
标题翻译：电容传感器
公开(公告)号：US5431052A
公开(公告)日：1995-07-11
申请号：US6046
申请日：1993-01-19
申请人： Richard Bischof , Guenther Findler
发明人： Richard Bischof , Guenther Findler
IPC分类号： G01C9/06 , G01P15/08 , G01P15/125 , H01L21/00
CPC分类号： G01P15/125 , G01P15/0802 , G01P2015/0828 , H01L2924/0002
摘要： A capacitive sensor has a plurality of mutually insulated metallized silicon wafers or plates, the bond bases of which were treated by etching to create trapezoidally-cross-sectional bonding bases or pads for wire-bonding of the individual silicon plates. The stray capacitance caused by the bond bases is reduced by this step and the value of the stray capacitance becomes exactly reproducible.
摘要翻译：电容传感器具有多个相互绝缘的金属化硅晶片或板，其基底通过蚀刻处理以产生用于各个硅板的引线接合的梯形截面接合基座或焊盘。通过该步骤减少由键合基底引起的杂散电容，并且杂散电容的值变得精确可重现。

8. 发明授权

US5324410A Device for one-sided etching of a semiconductor wafer 失效
标题翻译：用于半导体晶片的单面蚀刻的装置
公开(公告)号：US5324410A
公开(公告)日：1994-06-28
申请号：US969235
申请日：1993-02-01
申请人： Nils Kummer , Jiri Marek , Martin Willmann , Guenther Findler
发明人： Nils Kummer , Jiri Marek , Martin Willmann , Guenther Findler
IPC分类号： H01L21/304 , H01L21/00 , H01L21/306 , H01L21/687 , C25D17/06 , C25F7/00
CPC分类号： H01L21/67126 , H01L21/67075 , H01L21/67086 , H01L21/68721 , H01L21/68735
摘要： A device for one-sided etching of a semiconductor wafer (silicon wafer) is proposed, which consists in the manner of an etching box of a trough-shaped basic body (3, 23) and a lid (2, 22) which matches the latter hermetically. The lid (2, 22) has on the topside an opening (5, 25) for the passage of the etching liquid. The etching box bears at least two O-rings (7, 8, 27, 28), of which one is arranged centrally in the basic body (3, 23) and the other centrally in the lid (2, 22). The wafer (1) is clamped between the O-rings (7, 8, 27, 28). A wire (10) connected to the wafer by means of a plate of a spring contact (11, 41) is guided out of the etching box through a bore (4) extending through the basic body (3, 23).
摘要翻译： PCT No.PCT / DE91 / 00545 Sec。 371日期：1993年2月1日 102（e）1993年2月1日PCT PCT 1991年7月2日PCT公布。出版物WO92 / 02948 日本1992年2月20日提出了一种用于半导体晶片（硅晶片）的单面蚀刻的装置，其包括槽形基体（3,23）和盖（ 2，22）与后者密切相配。盖（2,22）在顶部具有用于蚀刻液体通过的开口（5,25）的上侧。蚀刻盒具有至少两个O形环（7,8,27,28），其中一个设置在基体（3,23）的中心，另一个位于盖（2,22）的中心。晶片（1）夹在O形环（7,8,27,28）之间。通过弹簧触头（11,41）的板连接到晶片的导线（10）通过穿过基体（3,23）的孔（4）从蚀刻箱引出。

9. 发明授权

US5553790A Orifice element and valve with orifice element 失效
标题翻译：开孔元件和带孔元件的阀
公开(公告)号：US5553790A
公开(公告)日：1996-09-10
申请号：US308720
申请日：1994-09-19
申请人： Guenther Findler , Juergen Buchholz , Udo Jauernig
发明人： Guenther Findler , Juergen Buchholz , Udo Jauernig
IPC分类号： B05B1/02 , F02M51/06 , F02M61/18 , F02M69/04 , F16K1/06 , B05B1/30
CPC分类号： F02M61/184 , F02M51/0678 , F02M61/186 , F02M69/047
摘要： Orifice elements for use in valves for injecting fuel or a fuel-gas mixture. The orifice elements include two silicon plates, joined to one another. An upper plate has one or more injection orifices. The lower plate has a through hole introduced in it, through which a fuel jet can emerge. The lower plate follows in the downstream direction and includes a jet splitter. The jet splitter divides the through hole into at least two passthrough openings so that a dual-jet characteristic is produced or maintained for the valve. At least two conduits are formed between the upper plate and the lower plate. Gas is provided via the conduits and is mixed with the fuel discharged through the injection orifice. The injection orifice and the valve are particularly suited for injection systems of mixture-compressing internal-combustion engines having externally supplied ignition.
摘要翻译：用于喷射燃料或燃料 - 气体混合物的阀门的孔口元件。孔元件包括彼此连接的两个硅板。上板具有一个或多个喷射孔。下板具有引入其中的通孔，通过该通孔可以出现燃料喷射。下板沿着下游方向并且包括喷射分离器。喷射分流器将通孔分成至少两个直通开口，从而产生或保持阀的双喷射特性。在上板和下板之间形成至少两个导管。通过导管提供气体，并与通过喷射孔排出的燃料混合。喷射孔和阀特别适合于具有外部供应点火的混合压缩内燃机的喷射系统。

10. 发明授权

US5467649A Mass flow sensor having a measuring element arranged on a membrane retained on a monocrystalline silicon wafer 失效
标题翻译：质量流量传感器具有布置在保留在单晶硅晶片上的膜上的测量元件
公开(公告)号：US5467649A
公开(公告)日：1995-11-21
申请号：US278342
申请日：1994-07-21
申请人： Eckart Reihlen , Jiri Marek , Frank Bantien , Guenther Findler , Michael Offenberg , Josef Kleinhans , Uwe Konzelmann , Botho Ziegenbein
发明人： Eckart Reihlen , Jiri Marek , Frank Bantien , Guenther Findler , Michael Offenberg , Josef Kleinhans , Uwe Konzelmann , Botho Ziegenbein
IPC分类号： G01F1/684 , G01F1/86 , G01F1/68
CPC分类号： G01F1/6845 , G01F1/86
摘要： A mass flow sensor includes a measuring element arranged on a membrane that is clamped in a frame. The sensor is formed by introducing a recess into a silicon wafer. Through the application of a recess having perpendicular walls, the thickness of the frame can be reduced, thus allowing the required surface area of the wafer to also be reduced.
摘要翻译：质量流量传感器包括布置在被夹在框架中的膜上的测量元件。传感器通过将凹槽引入硅晶片而形成。通过施加具有垂直壁的凹部，可以减小框架的厚度，从而允许晶片的所需表面积减小。

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