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1. 发明授权

US5071510A Process for anisotropic etching of silicon plates 失效
标题翻译：硅板的异相蚀刻工艺
公开(公告)号：US5071510A
公开(公告)日：1991-12-10
申请号：US586803
申请日：1990-09-24
申请人： Guenther Findler , Horst Muenzel
发明人： Guenther Findler , Horst Muenzel
IPC分类号： H01L21/3063 , H01L21/308
CPC分类号： H01L21/3081 , H01L21/3063 , Y10S438/928 , Y10S438/958
摘要： Electrochemical etching of silicon wafers or plates, on the front side of which a monocrystalline epitaxy layer is provided having a doping of a type opposite to the doping of the remainder of the silicon plate, so as to provide a pn or np junction, is performed with an organic photo film material of negative type and polyisoprene base serving as a passivating layer on the previously etched and metallized front (epitaxy) side. The film layer is held in place with the help of an adhesion promoting silane compound and covers the entire front side including the portions previously masked with silicon nitride or oxide. It is dried and hardened before exposure to the etchant which is used to etch the rear side of the plate until the etchant reaches the pn junction, where a small voltage bias applied to the junction from the front side assures an etch-stop. Etchants containing tetraalkylammonium hydroxide in water solution or in water-free form are preferred, with various additives as inhibitors, complexing agents and/or wetting agents.
摘要翻译：在其前侧提供具有与硅板的其余部分的掺杂相反的掺杂类型的单晶外延层以提供pn或np结的硅晶片或板的电化学蚀刻，在预蚀刻和金属化的正面（外延）侧上具有负型有机摄影薄膜材料和用作钝化层的聚异戊二烯基底。借助于增粘硅烷化合物将膜层保持在适当位置，并覆盖包括先前用氮化硅或氧化物掩蔽的部分的整个正面。在暴露于用于蚀刻板的后侧的蚀刻剂之前将其干燥和硬化，直到蚀刻剂到达pn结，其中从前侧施加到接合处的小的电压偏置确保蚀刻停止。含有水溶液中的四烷基氢氧化铵或无水形式的蚀刻剂是优选的，具有各种添加剂作为抑制剂，络合剂和/或润湿剂。

2. 发明授权

US5629538A Semiconductor sensor having a protective layer 失效
标题翻译：具有保护层的半导体传感器
公开(公告)号：US5629538A
公开(公告)日：1997-05-13
申请号：US433576
申请日：1995-05-03
申请人： Uwe Lipphardt , Guenther Findler , Horst Muenzel , Helmut Baumann
发明人： Uwe Lipphardt , Guenther Findler , Horst Muenzel , Helmut Baumann
IPC分类号： G01L9/04 , G01L9/00 , G01L19/06 , H01L29/84 , H01L29/82
CPC分类号： G01L19/147 , G01L19/0627 , G01L9/0042
摘要： A semiconductor chip, which is preferably designed as a pressure sensor, has on its rear side one or more depressions in which the pressure is measured by correspondingly designed diaphragms which are coupled to piezosensitive circuits. The surface of the depressions and, optionally, the rear side of the semiconductor chip are coated with a protective layer which ensures that the semiconductor is protected from aggressive media. The protective layer thereby makes it possible to use the sensor universally in acids, lyes or hot gases.
摘要翻译：优选地设计为压力传感器的半导体芯片在其后侧具有一个或多个凹陷，其中通过相应设计的隔膜耦合压敏电阻来测量压力。凹部的表面和可选地，半导体芯片的后侧涂覆有保护层，其保护半导体免受侵蚀性介质的侵害。因此，保护层使得可以将传感器普遍用于酸，碱液或热气体中。

3. 发明授权

US5421952A Method for the manufacture of silicon injection plates and silicon plates produced thereby 失效
标题翻译：制造硅注射板和硅板的方法
公开(公告)号：US5421952A
公开(公告)日：1995-06-06
申请号：US131512
申请日：1993-10-04
申请人： Juergen Buchholz , Udo Jauernig , Alexandra Boehringer , Guenther Findler , Horst Muenzel
发明人： Juergen Buchholz , Udo Jauernig , Alexandra Boehringer , Guenther Findler , Horst Muenzel
IPC分类号： B05B1/04 , C23F1/00 , F02M61/16 , F02M61/18 , B05B1/00
CPC分类号： F02M61/168 , F02M61/1853
摘要： A method for fabricating silicon injection plates is both highly precise and particularly simple. The silicon injection plate is formed by an upper silicon plate having injection holes and a lower silicon plate having a through opening and channels. The lower silicon plate is fabricated by simultaneous, double-sided etching of silicon.
摘要翻译：制造硅注射板的方法既高精度又特别简单。硅注射板由具有注入孔的上硅板和具有通孔和通道的下硅板形成。下硅板通过硅的同时双面蚀刻制造。

4. 发明授权

US06268232B1 Method for fabricating a micromechanical component 有权
标题翻译：微机械部件的制造方法
公开(公告)号：US06268232B1
公开(公告)日：2001-07-31
申请号：US09302224
申请日：1999-04-29
申请人： Helmut Skapa , Horst Muenzel , Franz Laermer , Michael Offenberg , Heinz-Georg Vossenberg
发明人： Helmut Skapa , Horst Muenzel , Franz Laermer , Michael Offenberg , Heinz-Georg Vossenberg
IPC分类号： H01L2100
CPC分类号： G01P15/0802 , B81B2201/0235 , B81C1/00571 , B81C2201/0109 , B81C2201/014 , B81C2201/056 , B81C2203/0109 , G01P1/023
摘要： A method for fabricating a micromechanical component, in particular a surface-micromechanical acceleration sensor, involves preparing a substrate and providing an insulation layer on the substrate, in which a patterned circuit trace layer is buried. A conductive layer, including a first region and a second region, is provided on the insulation layer, and a movable element is configured in the first region by forming a first plurality of trenches and by using an etching agent to remove at least one portion of the insulation layer from underneath the conductive layer. A contact element is formed and electrically connected to the circuit trace layer in the second region by configuring a second plurality of trenches, and the resultant movable element is encapsulated in the first region. The second plurality of trenches for forming the contact element in the second region is first formed after the encapsulation of the movable element formed in the first region.
摘要翻译：用于制造微机械部件，特别是表面微机械加速度传感器的方法涉及准备衬底并在衬底上提供绝缘层，其中掩埋有图案化的电路迹线层。包括第一区域和第二区域的导电层设置在绝缘层上，并且可移动元件通过形成第一多个沟槽而被构造在第一区域中，并且通过使用蚀刻剂去除至少一部分绝缘层从导电层下面。通过构造第二多个沟槽，形成接触元件并在第二区域中电连接到电路迹线层，并且所得到的可移动元件被封装在第一区域中。在第二区域中形成接触元件的第二多个沟槽首先在形成在第一区域中的可移动元件的封装之后形成。

5. 发明授权

US5721377A Angular velocity sensor with built-in limit stops 失效
标题翻译：角速度传感器，内置限位件
公开(公告)号：US5721377A
公开(公告)日：1998-02-24
申请号：US681243
申请日：1996-07-22
申请人： Juergen Kurle , Kurt Weiblen , Horst Muenzel , Helmut Baumann , Klaus Heyers , Markus Lutz
发明人： Juergen Kurle , Kurt Weiblen , Horst Muenzel , Helmut Baumann , Klaus Heyers , Markus Lutz
IPC分类号： G01C19/56 , G01P9/04
CPC分类号： G01C19/5712 , G01P2015/0814
摘要： In an angular velocity sensor, an acceleration sensor is arranged on a resonator formed of a multilayer substrate and attached to a resonating bar. The multilayer substrate includes a top silicon layer, an insulating sacrificial layer arranged below the top silicon layer, and a bottom silicon layer arranged below the insulating sacrificial layer. An excitor causes the resonator to vibrate while a limit stop, configured out of the multilayer substrate, limits the movement of the resonator.
摘要翻译：在角速度传感器中，加速度传感器布置在由多层基板形成并且附接到谐振杆的谐振器上。多层基板包括顶部硅层，布置在顶部硅层下方的绝缘牺牲层和布置在绝缘牺牲层下方的底部硅层。激励器使谐振器振动，而由多层基板构成的极限停止限制了谐振器的移动。

6. 发明授权

US5705745A Mass flow sensor 失效
标题翻译：质量流量传感器
公开(公告)号：US5705745A
公开(公告)日：1998-01-06
申请号：US700745
申请日：1996-07-29
申请人： Christoph Treutler , Detlef Gruen , Horst Muenzel , Helmut Baumann , Steffen Schmidt , Andreas Lock
发明人： Christoph Treutler , Detlef Gruen , Horst Muenzel , Helmut Baumann , Steffen Schmidt , Andreas Lock
IPC分类号： G01F1/68 , G01F1/684 , G01F1/692
CPC分类号： G01F1/6845
摘要： In a mass flow sensor having a frame of monocrystalline silicon and a membrane fixed therein, a heating element and, if indicated, temperature-measuring elements are provided on the membrane. A heat-conducting element, which extends from the membrane across the frame, is provided in the edge area of the membrane. The heating element, the heat-conducting element and, if indicated, temperature-measuring elements are patterned out of a single metal layer.
摘要翻译：在具有单晶硅框架和固定在其中的膜的质量流量传感器中，加热元件，如果指示，则在膜上提供温度测量元件。在膜的边缘区域设置从膜穿过框架延伸的导热元件。如图所示，加热元件，导热元件和温度测量元件由单个金属层图案化。

7. 发明授权

US08245571B2 Component and production method for a component 有权
标题翻译：组件的组件和生产方法
公开(公告)号：US08245571B2
公开(公告)日：2012-08-21
申请号：US12611634
申请日：2009-11-03
申请人： Thorsten Pannek , Udo-Martin Gomez , Horst Muenzel
发明人： Thorsten Pannek , Udo-Martin Gomez , Horst Muenzel
IPC分类号： B60C23/02 , B60C23/00 , H03B5/04
CPC分类号： G01P15/125 , B60C23/0408 , B60C23/0433 , B81B7/02 , B81B2201/0235 , B81B2201/0264 , B81B2201/0271 , G01P15/0802 , G01P2015/0814 , Y10T29/49002
摘要： A component having an acceleration sensor having at least one freely oscillatory mass, and a resonator having at least one resonating structure, in which the at least one freely oscillatory mass of the acceleration sensor and the at least one resonating structure of the resonator are disposed on and/or in one chip. A corresponding production method for a component is also described.
摘要翻译：具有至少一个自由振荡质量的加速度传感器的分量和具有至少一个谐振结构的谐振器，其中加速度传感器的至少一个自由振荡质量和谐振器的至少一个谐振结构设置在和/或在一个芯片中。还描述了相应的组件的制造方法。

8. 发明申请

US20060016995A1 Microstructured infrared sensor and method for its manufacture 审中-公开
标题翻译：微结构红外传感器及其制造方法
公开(公告)号：US20060016995A1
公开(公告)日：2006-01-26
申请号：US11150762
申请日：2005-06-10
申请人： Nils Kummer , Roland Mueller-Fiedler , Stefan Finkbeiner , Andre Mueller , Horst Muenzel , Dieter Maurer , Stefan Hiemer , Jurgen Perthold
发明人： Nils Kummer , Roland Mueller-Fiedler , Stefan Finkbeiner , Andre Mueller , Horst Muenzel , Dieter Maurer , Stefan Hiemer , Jurgen Perthold
IPC分类号： G01J5/00
CPC分类号： G01J1/04 , G01J1/0411 , G01J5/02 , G01J5/0215 , G01J5/024 , G01J5/04 , G01J5/045 , G01J5/046 , G01J5/08 , G01J5/0806 , G01J5/0853 , G01J5/0881 , G01J5/12 , G01N21/3504 , H01L27/14618 , H01L27/14625 , H01L31/0203 , H01L31/0232 , H01L2924/0002 , H01L2924/00
摘要： A microstructured infrared sensor includes: a sensor chip having a diaphragm; a cavity formed underneath the diaphragm; a thermopile structure formed on the diaphragm and having bonded printed conductors; an absorber layer formed on the thermopile structure for absorbing infrared radiation; and a cap chip attached to the sensor chip. A sensor space is formed between the cap chip and the sensor chip, and the sensor space accommodates the thermopile structure. The infrared sensor also includes a convex lens area for focusing incident infrared radiation onto the absorber layer. The lens area may be formed on the top of the cap chip or on a lens chip attached to the cap chip. The lens area may be formed by drying a dispensed lacquer droplet, or by a softened, structured lacquer cylinder, or by subsequent etching of the dried lacquer droplet and the surrounding substrate material.
摘要翻译：微结构红外传感器包括：具有隔膜的传感器芯片; 形成在隔膜下方的空腔; 形成在隔膜上并具有粘合的印刷导体的热电堆结构; 形成在热电堆结构上用于吸收红外辐射的吸收层; 以及附接到传感器芯片的盖芯片。在盖芯片和传感器芯片之间形成传感器空间，传感器空间容纳热电堆结构。红外传感器还包括用于将入射的红外辐射聚焦到吸收层上的凸透镜区域。透镜区域可以形成在盖芯片的顶部上或附接到盖芯片的透镜芯片上。透镜区域可以通过干燥分配的漆液滴，或通过软化的结构化漆筒，或者通过随后蚀刻干燥的漆液滴和周围的基底材料来形成。

9. 发明授权

US06318175B1 Micromechanical sensor and method for the manufacture thereof 有权
标题翻译：微机械传感器及其制造方法
公开(公告)号：US06318175B1
公开(公告)日：2001-11-20
申请号：US09585141
申请日：2000-06-01
申请人： Joerg Muchow , Horst Muenzel , Michael Offenberg , Winfried Waldvogel
发明人： Joerg Muchow , Horst Muenzel , Michael Offenberg , Winfried Waldvogel
IPC分类号： G01P1500
CPC分类号： G01H11/06 , G01L9/0042 , G01L9/0054 , G01L9/0073 , G01P15/0802 , G01P15/123 , G01P15/125 , G01P2015/0814 , G01P2015/0817 , G01P2015/0828
摘要： A micromechanical sensor includes a support of silicon substrate having an epitaxial layer of silicon applied on the silicon substrate. A part of the epitaxial layer is laid bare to form at least one micromechanical deflection part by an etching process. The bared deflection part is made of polycrystalline silicon which has grown in polycrystalline form during the epitaxial process over a silicon-oxide layer which has been removed by etching. In the support region and/or at the connection to the silicon substrate, the exposed deflection part passes into single crystal silicon. By large layer thicknesses, a large working capacity of the sensor is possible. The sensor structure provides enhanced mechanical stability, processability, and possibilities of shaping, and it can be integrated, in particular, in a bipolar process or mixed process (bipolar-CMOS, bipolar-CMOS-DMOS).
摘要翻译：微机械传感器包括具有施加在硅衬底上的硅的外延层的硅衬底的支撑体。通过蚀刻工艺将外延层的一部分裸露以形成至少一个微机械偏转部分。裸露的偏转部分由多晶硅制成，该多晶硅在外延生长过程中在已通过蚀刻去除的氧化硅层上形成多晶体。在支撑区域和/或与硅衬底的连接处，暴露的偏转部分进入单晶硅。通过大层厚度，传感器的大工作容量是可能的。该传感器结构提供增强的机械稳定性，可加工性和成形的可能性，并且其可以特别集成在双极工艺或混合工艺（双极CMOS，双极CMOS-DMOS）中。

10. 发明授权

US06055858A Acceleration sensor 有权
标题翻译：加速度传感器
公开(公告)号：US06055858A
公开(公告)日：2000-05-02
申请号：US362936
申请日：1999-07-28
申请人： Horst Muenzel , Dietrich Schubert , Alexandra Boehringer , Michael Offenberg , Klaus Heyers , Markus Lutz
发明人： Horst Muenzel , Dietrich Schubert , Alexandra Boehringer , Michael Offenberg , Klaus Heyers , Markus Lutz
IPC分类号： G01P15/02 , G01P3/48 , G01P9/04 , G01P15/08 , G01P15/125 , H01L29/84 , G01P3/00
CPC分类号： G01P3/48 , G01P15/0802 , G01P15/125 , G01P2015/0814 , Y10S148/135 , Y10S148/159
摘要： An acceleration sensor is composed of a three-layer system. The acceleration sensor and conductor tracks are patterned out of the third layer. The conductor tracks are electrically isolated from other regions of the third layer by recesses and electrically insulated from a first layer by a second electrically insulating layer. In this manner, a simple electrical contacting is achieved, which is configured out of a three-layer system. One exemplary application of the acceleration sensor includes mounting the acceleration sensor on a vibrational system of an rpm (rate-of-rotation sensor). This simplifies the manufacturing of an rpm sensor, since the vibrational system and the acceleration sensor are configured out of a three-layer system, wherein the conductor tracks are run into the frame of the rpm sensor in which the vibrational system is suspended, so as to allow excursion.
摘要翻译：加速度传感器由三层系统组成。将加速度传感器和导体轨迹从第三层图案化。导体轨道通过凹部与第三层的其它区域电绝缘，并且通过第二电绝缘层与第一层电绝缘。以这种方式，实现了由三层系统构成的简单的电接触。加速度传感器的一个示例性应用包括将加速度传感器安装在rpm（转速传感器）的振动系统上。这简化了rpm传感器的制造，因为振动系统和加速度传感器是由三层系统构成的，其中导体轨道运行到其中悬挂振动系统的转速传感器的框架中，以便允许游览。

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