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    • 3. 发明申请
    • MICROMECHANICAL COMPONENT AND PRODUCTION METHOD FOR A MICROMECHANICAL COMPONENT
    • 微生物组分的微生物组分和生产方法
    • US20120133242A1
    • 2012-05-31
    • US13320712
    • 2010-05-18
    • Frederic Njikam NjimonzieJoerg MuchowZoltan LestyanWolfram Schock
    • Frederic Njikam NjimonzieJoerg MuchowZoltan LestyanWolfram Schock
    • H02N1/00H05K13/00
    • G02B26/0841B81B3/0021B81B2201/033B81B2201/042Y10T29/49002
    • A micromechanical component has an outer stator electrode component and an outer actuator electrode component which is connected to a holder via at least one outer spring, an adjustable element being adjustable about a first rotation axis by application of a first voltage between the outer actuator electrode component and the outer stator electrode component, and having an inner stator electrode component and an inner actuator electrode component having a first web with at least one electrode finger disposed thereon, the adjustable element being adjustable about a second rotation axis by application of a second voltage between the at least one electrode finger of the inner actuator electrode component and the inner stator electrode component, and the inner actuator electrode component being connected to the outer actuator electrode component via an intermediate spring which is oriented along the second rotation axis. Also described is a production method for a micromechanical component.
    • 微机械部件具有外部定子电极部件和外部致动器电极部件,其经由至少一个外部弹簧连接到保持器,可调节元件可围绕第一旋转轴线调节,通过在外部致动器电极部件 和外部定子电极部件,并且具有内部定子电极部件和内部致动器电极部件,所述内部致动器电极部件具有设置在其上的至少一个电极指的第一网状物,所述可调节元件可围绕第二旋转轴线调节, 内部致动器电极部件的至少一个电极指和内部定子电极部件,内部致动器电极部件通过沿着第二旋转轴线取向的中间弹簧连接到外部致动器电极部件。 还描述了一种用于微机械部件的制造方法。
    • 6. 发明申请
    • ELECTROSTATIC DRIVE, METHOD FOR OPERATING A MICROMECHANICAL COMPONENT HAVING AN ELECTROSTATIC DRIVE, AND METHOD FOR MANUFACTURING AN ELECTROSTATIC DRIVE
    • 静电驱动装置,具有静电驱动装置的微型组件的操作方法以及制造静电驱动装置的方法
    • US20100201292A1
    • 2010-08-12
    • US12698806
    • 2010-02-02
    • Michael KruegerFrederic Njikam NjimonzieJoerg Muchow
    • Michael KruegerFrederic Njikam NjimonzieJoerg Muchow
    • H02N11/00H05K13/00
    • H02N1/006Y10T29/49226
    • An electrostatic drive having at least three intermediate frames, each two adjacent intermediate frames being connected to one another via at least one intermediate spring whose longitudinal directions lie on a first axis of rotation, and intermediate electrode fingers being situated on frame girders oriented parallel to the first axis of rotation of the intermediate frames, and having an outer frame that surrounds the intermediate frames and that is connected to the outermost intermediate frame via at least one outer spring whose longitudinal direction lies on a second axis of rotation that is oriented non-parallel to the first axis of rotation, and outer electrode fingers being situated on frame girders oriented parallel to the second axis of rotation of the outer frame and of the outermost intermediate frame of the at least three intermediate frames. In addition, a micromechanical component having this electrostatic drive, a method for operating such a micromechanical component, and methods for manufacturing the electrostatic drive and the micromechanical component are described.
    • 具有至少三个中间框架的静电驱动器,每两个相邻的中间框架经由至少一个中间弹簧彼此连接,所述至少一个中间弹簧的纵向位于第一旋转轴线上,中间电极指位于平行于 中间框架的第一旋转轴线,并且具有环绕中间框架的外框架,并且其经由至少一个外部弹簧连接到最外侧中间框架,该外部弹簧的纵向位于不平行的第二旋转轴线上 并且外电极指位于平行于外框的第二旋转轴线和至少三个中间框架的最外侧中间框架的框架梁上。 此外,描述了具有这种静电驱动的微机械部件,用于操作这种微机械部件的方法,以及用于制造静电驱动器和微机械部件的方法。
    • 9. 发明授权
    • Method of structuring a semiconductor chip
    • 结晶半导体芯片的方法
    • US5242533A
    • 1993-09-07
    • US828033
    • 1992-01-30
    • Hans-Peter TrahGuenther FindlerJoerg Muchow
    • Hans-Peter TrahGuenther FindlerJoerg Muchow
    • H01L21/22H01L21/302H01L21/306H01L21/3063H01L21/3065H01L21/308H01L29/84
    • H01L21/30604H01L21/3063H01L21/3081Y10S438/924
    • Processes are proposed for structuring monocrystalline semiconductor substrates provided with a basic doping, in particular silicon substrates with a (100) or (110) crystal orientation. In this process, at least one main surface of the semiconductor substrate is passivated by means of a structured masking layer, and in an etching step etching into the semiconductor substrate is done anisotropically through openings in the masking layer. It is proposed that as the masking layer (12), a structured, preferably monocrystalline, layer of the basic material of the semiconductor substrate be used, which is doped such that a pn junction is produced between the masking layer (12) and the semiconductor substrate (10), the junction being polarized in the depletion direction and serving as an etch stop. It is also proposed that the semiconductor substrate (10) be formed of a substrate (11) and at least one layer (13), applied thereon, with buried zones (16), with pn junctions being produced between the zones (16) and the substrate (11). Zones (16) that are electrically insulated from one another and the semiconductor substrate (10) are electrically bonded, so that the pn junctions are polarized in the depletion direction and serve as an etch stop for deep etching.
    • 提出了用于构造设置有基本掺杂的单晶半导体衬底的工艺,特别是具有(100)或(110)晶体取向的硅衬底。 在该工艺中,半导体衬底的至少一个主表面通过结构化掩模层钝化,并且在蚀刻步骤中,通过掩模层中的开口各向异性地进行蚀刻到半导体衬底中。 提出,作为掩模层(12),使用半导体衬底的基本材料的结构化的,优选单晶层,其被掺杂以使得在掩模层(12)和半导体层(12)之间产生pn结 衬底(10),所述结在耗尽方向上极化并用作蚀刻停止。 还提出半导体衬底(10)由衬底(11)和其上施加有至少一个层(13)形成,具有掩埋区域(16),在区域(16)和 基板(11)。 彼此电绝缘的区域(16)和半导体衬底(10)电连接,使得pn结在耗尽方向上极化,并用作深刻蚀的蚀刻停止。