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1. 发明授权

US08823372B2 Method for homogenizing resolution in magnet resonance tomography measurements using non-linear encoding fields 有权
标题翻译：使用非线性编码区域在磁共振断层摄影测量中使分辨率均匀化的方法
公开(公告)号：US08823372B2
公开(公告)日：2014-09-02
申请号：US13064277
申请日：2011-03-16
申请人： Hans Weber , Maxim Zaitsev , Daniel Gallichan , Gerrit Schultz
发明人： Hans Weber , Maxim Zaitsev , Daniel Gallichan , Gerrit Schultz
IPC分类号： G01R33/48 , G01R33/483
CPC分类号： G01R33/4833
摘要： A method for magnetic resonance (=MR) imaging, wherein non-linear gradient fields are applied for the purpose of spatial encoding to acquire images of an object to be imaged and wherein the magnet resonance signal radiated from the object to be imaged is sampled on grids in time, to thereby obtain sampling points, is characterized in that the object to be imaged is mapped completely in regions of stronger gradient fields by increasing the density of the sampling points in the center of k-space, and additional sampling points are specifically acquired in the outer regions of k-space according to a k-space sampling pattern depending on the desired distribution of the resolution in the measurement, wherein the MR measurement is calculated with the additional sampling points. An MR imaging method is thereby provided by means of which homogenized resolution is achieved in the MR measurements using non-linear gradient fields for spatial encoding.
摘要翻译：一种用于磁共振（= MR）成像的方法，其中应用非线性梯度场用于空间编码以获取待成像对象的图像，并且其中从待成像对象辐射的磁共振信号被采样在时间上的网格，从而获得采样点，其特征在于通过增加k空间中心的采样点的密度，将要成像的对象完全映射在更强的梯度场的区域中，并且附加的采样点是具体的根据k-空间采样模式在k空间的外部区域中取决于测量中的分辨率的期望分布，其中用附加采样点计算MR测量值。由此提供MR成像方法，通过这种方法，使用非线性梯度场用于空间编码的MR测量中实现了均匀分辨率。

2. 发明申请

US20110241678A1 Method for homogenizing resolution in magnet resonance tomography measurements using non-linear encoding fields 有权
标题翻译：使用非线性编码区域在磁共振断层摄影测量中使分辨率均匀化的方法
公开(公告)号：US20110241678A1
公开(公告)日：2011-10-06
申请号：US13064277
申请日：2011-03-16
申请人： Hans Weber , Maxim Zaitsev , Daniel Gallichan , Gerrit Schultz
发明人： Hans Weber , Maxim Zaitsev , Daniel Gallichan , Gerrit Schultz
IPC分类号： G01R33/48
CPC分类号： G01R33/4833
摘要： A method for magnetic resonance (=MR) imaging, wherein non-linear gradient fields are applied for the purpose of spatial encoding to acquire images of an object to be imaged and wherein the magnet resonance signal radiated from the object to be imaged is sampled on grids in time, to thereby obtain sampling points, is characterized in that the object to be imaged is mapped completely in regions of stronger gradient fields by increasing the density of the sampling points in the center of k-space, and additional sampling points are specifically acquired in the outer regions of k-space according to a k-space sampling pattern depending on the desired distribution of the resolution in the measurement, wherein the MR measurement is calculated with the additional sampling points. An MR imaging method is thereby provided by means of which homogenized resolution is achieved in the MR measurements using non-linear gradient fields for spatial encoding.
摘要翻译：一种用于磁共振（= MR）成像的方法，其中应用非线性梯度场用于空间编码以获取待成像对象的图像，并且其中从待成像对象辐射的磁共振信号被采样在时间上的网格，从而获得采样点，其特征在于通过增加k空间中心的采样点的密度，将要成像的对象完全映射在更强的梯度场的区域中，并且附加的采样点是具体的根据k-空间采样模式在k空间的外部区域中取决于测量中的分辨率的期望分布，其中用附加采样点计算MR测量值。由此提供MR成像方法，通过这种方法，使用非线性梯度场用于空间编码的MR测量中实现了均匀分辨率。

3. 发明申请

US20120262171A1 Method of magnetic resonance imaging for the selection and recording of curved slices 有权
标题翻译：用于选择和记录弯曲切片的磁共振成像方法
公开(公告)号：US20120262171A1
公开(公告)日：2012-10-18
申请号：US13443908
申请日：2012-04-11
申请人： Hans Weber , Maxim Zaitsev , Daniel Gallichan , Juergen Hennig
发明人： Hans Weber , Maxim Zaitsev , Daniel Gallichan , Juergen Hennig
IPC分类号： G01R33/54
CPC分类号： G01R33/4833 , G01R33/483 , G01R33/4835 , G01R33/4836
摘要： A method of MR imaging applies a magnetic field Bgrad1 having a spatially non-linear dependence to select a volume of at least one curved slice. The slice is described by its midsurface AM, a volume of the selected slice being made up of nν partial volumes in each of which gradients of at least one pair of remaining superimposed magnetic fields Bgradi (i>1) exhibit an angle dependence of 70° to 110° with respect to one another and with respect to the normal of the midsurface AM. At least one superimposed magnetic field of the respective pair exhibits a spatially non-linear dependence and combinations of these pairs are used for spatial encoding. In this way, curved surfaces can be mapped efficiently in high resolution and the method can be adapted to the slice shape.
摘要翻译： MR成像的方法应用具有空间非线性依赖性的磁场Bgrad1来选择至少一个弯曲切片的体积。切片由其中心面AM描述，所选切片的体积由n＆ngr组成; 至少一对剩余叠加磁场Bgradi（i> 1）的梯度中的每一个的部分体积相对于彼此表现出70°至110°的角度依赖性，并且相对于中空面AM的法线呈现角度依赖性。相应对的至少一个叠加的磁场表现出空间非线性相关性，并且这些对的组合用于空间编码。以这种方式，可以高分辨率地有效地映射曲面，并且该方法可以适应于切片形状。

4. 发明授权

US09097777B2 Method of magnetic resonance imaging for the selection and recording of curved slices 有权
标题翻译：用于选择和记录弯曲切片的磁共振成像方法
公开(公告)号：US09097777B2
公开(公告)日：2015-08-04
申请号：US13443908
申请日：2012-04-11
申请人： Hans Weber , Maxim Zaitsev , Daniel Gallichan , Juergen Hennig
发明人： Hans Weber , Maxim Zaitsev , Daniel Gallichan , Juergen Hennig
IPC分类号： G01R33/483
CPC分类号： G01R33/4833 , G01R33/483 , G01R33/4835 , G01R33/4836
摘要： A method of MR imaging applies a magnetic field Bgrad1 having a spatially non-linear dependence to select a volume of at least one curved slice. The slice is described by its midsurface AM, a volume of the selected slice being made up of nν partial volumes in each of which gradients of at least one pair of remaining superimposed magnetic fields Bgradi (i>1) exhibit an angle dependence of 70° to 110° with respect to one another and with respect to the normal of the midsurface AM. At least one superimposed magnetic field of the respective pair exhibits a spatially non-linear dependence and combinations of these pairs are used for spatial encoding. In this way, curved surfaces can be mapped efficiently in high resolution and the method can be adapted to the slice shape.
摘要翻译： MR成像的方法应用具有空间非线性依赖性的磁场Bgrad1来选择至少一个弯曲切片的体积。切片由其中心面AM描述，所选切片的体积由n＆ngr组成; 至少一对剩余叠加磁场Bgradi（i> 1）的梯度中的每一个的部分体积相对于彼此表现出70°至110°的角度依赖性，并且相对于中空面AM的法线呈现角度依赖性。相应对的至少一个叠加的磁场表现出空间非线性相关性，并且这些对的组合用于空间编码。以这种方式，可以高分辨率地有效地映射曲面，并且该方法可以适应于切片形状。

5. 发明授权

US08901642B2 Charge compensation semiconductor device 有权
标题翻译：充电补偿半导体器件
公开(公告)号：US08901642B2
公开(公告)日：2014-12-02
申请号：US13414037
申请日：2012-03-07
申请人： Hans Weber , Franz Hirler
发明人： Hans Weber , Franz Hirler
IPC分类号： H01L29/78
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/1095 , H01L29/167 , H01L29/32 , H01L29/407 , H01L29/408 , H01L29/41766 , H01L29/66727
摘要： A semiconductor device includes a semiconductor body having a first surface defining a vertical direction and a source metallization arranged on the first surface. In a vertical cross-section the semiconductor body further includes: a drift region of a first conductivity type; at least two compensation regions of a second conductivity type each of which forms a pn-junction with the drift region and is in low resistive electric connection with the source metallization; a drain region of the first conductivity type having a maximum doping concentration higher than a maximum doping concentration of the drift region, and a third semiconductor layer of the first conductivity type arranged between the drift region and the drain region and includes at least one of a floating field plate and a floating semiconductor region of the second conductivity type forming a pn-junction with the third semiconductor layer.
摘要翻译：半导体器件包括具有限定垂直方向的第一表面和布置在第一表面上的源极金属化的半导体本体。在垂直横截面中，半导体主体还包括：第一导电类型的漂移区; 至少两个第二导电类型的补偿区域，每个补偿区域与漂移区域形成pn结并与源极金属化处于低电阻电连接; 具有高于漂移区的最大掺杂浓度的最大掺杂浓度的第一导电类型的漏极区和布置在漂移区和漏极区之间的第一导电类型的第三半导体层，并且包括以下中的至少一个：浮置场板和第二导电类型的浮置半导体区域形成与第三半导体层的pn结。

6. 发明申请

US20140001552A1 Super Junction Semiconductor Device Comprising a Cell Area and an Edge Area 有权
标题翻译：包括单元区域和边缘区域的超级结半导体器件
公开(公告)号：US20140001552A1
公开(公告)日：2014-01-02
申请号：US13539973
申请日：2012-07-02
申请人： Franz Hirler , Hans Weber , Hans-Joachim Schulze , Uwe Wahl
发明人： Franz Hirler , Hans Weber , Hans-Joachim Schulze , Uwe Wahl
IPC分类号： H01L29/772 , H01L21/20 , H01L29/02
CPC分类号： H01L29/66712 , H01L29/0634 , H01L29/0649 , H01L29/0653 , H01L29/0696 , H01L29/1095 , H01L29/161 , H01L29/167 , H01L29/408 , H01L29/7395 , H01L29/7811 , H01L29/8611
摘要： A drift layer of a super junction semiconductor device includes first portions of a first conductivity type and second portions of a second conductivity type opposite to the first conductivity type. The first and second portions are formed both in a cell area and in an edge area surrounding the cell area, wherein an on-state or forward current through the drift layer flows through the first portions in the cell area. At least one of the first and second portions other than the first portions in the cell area includes an auxiliary structure or contains auxiliary impurities to locally reduce the avalanche rate. Locally reducing the avalanche rate increases the total voltage blocking capability of the super junction semiconductor device.
摘要翻译：超结半导体器件的漂移层包括第一导电类型的第一部分和与第一导电类型相反的第二导电类型的第二部分。第一和第二部分在单元区域和围绕单元区域的边缘区域中形成，其中通过漂移层的导通状态或正向电流流过单元区域中的第一部分。电池区域中除了第一部分之外的第一和第二部分中的至少一个包括辅助结构或包含辅助杂质以局部降低雪崩率。本地降低雪崩率提高了超结半导体器件的总电压阻断能力。

7. 发明申请

US20130193525A1 Semiconductor Arrangement with Active Drift Zone 有权
公开(公告)号：US20130193525A1
公开(公告)日：2013-08-01
申请号：US13362038
申请日：2012-01-31
申请人： Rolf Weis , Gerald Deboy , Michael Treu , Armin Willmeroth , Hans Weber
发明人： Rolf Weis , Gerald Deboy , Michael Treu , Armin Willmeroth , Hans Weber
IPC分类号： H01L27/06
CPC分类号： H01L27/0207 , H01L21/84 , H01L21/845 , H01L27/06 , H01L27/0629 , H01L27/088 , H01L27/0886 , H01L27/1211 , H01L29/4236 , H01L29/78 , H03K17/063 , H03K17/102
摘要： A semiconductor device arrangement includes a first semiconductor device having a load path and a plurality of second semiconductor devices, each having a load path between a first and a second load terminal and a control terminal. The second semiconductor devices have their load paths connected in series and connected in series to the load path of the first semiconductor device. Each of the second semiconductor devices has its control terminal connected to the load terminal of one of the other second semiconductor devices, and one of the second semiconductor devices has its control terminal connected to one of the load terminals of the first semiconductor device. Each of the second semiconductor devices has at least one device characteristic. At least one device characteristic of at least one of the second semiconductor devices is different from the corresponding device characteristic of others of the second semiconductor devices.

8. 发明申请

US20130154030A1 Semiconductor Device with Self-Charging Field Electrodes and Compensation Regions 有权
标题翻译：具有自充电场电极和补偿区域的半导体器件
公开(公告)号：US20130154030A1
公开(公告)日：2013-06-20
申请号：US13331843
申请日：2011-12-20
申请人： Hans Weber
发明人： Hans Weber
IPC分类号： H01L29/06 , H01L29/872 , H01L29/78
CPC分类号： H01L29/872 , H01L29/0623 , H01L29/0634 , H01L29/0653 , H01L29/1095 , H01L29/407 , H01L29/7802 , H01L29/7813 , H01L29/861
摘要： A semiconductor device includes a drift region of a first doping type, a junction between the drift region and a device region, a compensation region of a second doping type, and at least one field electrode structure arranged between the drift region and the compensation region. The at least one field electrode includes a field electrode and a field electrode dielectric adjoining the field electrode. The field electrode dielectric is arranged between the field electrode and the drift region and between the field electrode and the compensation. The field electrode dielectric includes a first opening through which the field electrode is coupled to drift region and a second opening through which the field electrode is coupled to the compensation region.
摘要翻译：半导体器件包括第一掺杂类型的漂移区域，漂移区域和器件区域之间的结，第二掺杂类型的补偿区域以及布置在漂移区域和补偿区域之间的至少一个场电极结构。所述至少一个场电极包括场电极和邻接所述场电极的场电极电介质。场电极介质布置在场电极和漂移区之间以及场电极和补偿之间。场电极电介质包括第一开口，场电极通过该第一开口耦合到漂移区，第二开口通过该场电极耦合到补偿区。

9. 发明申请

US20130082322A1 SEMICONDUCTOR DEVICE WITH SELF-CHARGING FIELD ELECTRODES 有权
标题翻译：具有自充电现场电极的半导体器件
公开(公告)号：US20130082322A1
公开(公告)日：2013-04-04
申请号：US13250013
申请日：2011-09-30
申请人： Hans Weber , Franz Hirler , Stefan Gamerith
发明人： Hans Weber , Franz Hirler , Stefan Gamerith
IPC分类号： H01L21/336 , H01L21/28
CPC分类号： H01L29/872 , H01L29/0653 , H01L29/407 , H01L29/7813 , H01L29/868
摘要： Disclosed is a semiconductor device including a drift region of a first doping type, a junction between the drift region and a device region, and at least one field electrode structure in the drift region. The field electrode structure includes a field electrode, a field electrode dielectric adjoining the field electrode and arranged between the field electrode and the drift region, and having an opening, at least one of a field stop region and a generation region.
摘要翻译：公开了一种半导体器件，其包括第一掺杂类型的漂移区域，漂移区域和器件区域之间的结以及漂移区域中的至少一个场电极结构。场电极结构包括场电极，与场电极相邻并且设置在场电极和漂移区之间的场电极电介质，并且具有开场，场停止区和发生区中的至少一个。

10. 发明申请

US20110147817A1 SEMICONDUCTOR COMPONENT HAVING AN OXIDE LAYER 审中-公开
标题翻译：具有氧化物层的半导体元件
公开(公告)号：US20110147817A1
公开(公告)日：2011-06-23
申请号：US12640974
申请日：2009-12-17
申请人： Hans-Joachim Schulze , Helmut Strack , Hans Weber
发明人： Hans-Joachim Schulze , Helmut Strack , Hans Weber
IPC分类号： H01L29/78 , H01L29/02 , H01L21/336 , H01L21/02
CPC分类号： H01L29/7813 , H01L21/02126 , H01L21/02238 , H01L21/76251 , H01L28/40 , H01L29/0649 , H01L29/0653 , H01L29/407 , H01L29/7803 , H01L29/7804 , H01L29/861 , H01L29/872
摘要： Semiconductor component having an oxide layer. One embodiment includes a first semiconductor region and a second semiconductor region. An oxide layer is arranged between the first and second semiconductor region. The first semiconductor region and the oxide layer form a first semiconductor-oxide interface. The second semiconductor region and the oxide layer form a second semiconductor-oxide interface. The oxide layer has a chlorine concentration, the chlorine concentration having a first maximum in the region of the first semiconductor-oxide interface, and having a second maximum in the region of the second semiconductor-oxide interface.
摘要翻译：具有氧化物层的半导体部件。一个实施例包括第一半导体区域和第二半导体区域。氧化物层布置在第一和第二半导体区域之间。第一半导体区域和氧化物层形成第一半导体 - 氧化物界面。第二半导体区域和氧化物层形成第二半导体 - 氧化物界面。氧化物层具有氯浓度，氯浓度在第一半导体 - 氧化物界面的区域具有第一最大值，并且在第二半导体 - 氧化物界面的区域具有第二最大值。

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