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    • 4. 发明授权
    • Substrate support with substrate heater and symmetric RF return
    • 衬底支撑与衬底加热器和对称RF返回
    • US08618446B2
    • 2013-12-31
    • US13173471
    • 2011-06-30
    • Yu ChangGwo-Chuan TzuAnqing CuiWilliam W. KuangOlkan Cuvalci
    • Yu ChangGwo-Chuan TzuAnqing CuiWilliam W. KuangOlkan Cuvalci
    • A21B1/00C23C16/00
    • F27B17/0025H01J37/32091H01J37/32715H01L21/67103H01L21/67248
    • Apparatus for processing a substrate are provided herein. In some embodiments, a substrate support includes a substrate support surface and a shaft; an RF electrode disposed in the substrate support proximate the substrate support surface to receive RF current from an RF source; a heater disposed proximate the substrate support surface to provide heat to a substrate when disposed on the substrate support surface, the heater having one or more conductive lines to provide power to the heater; a thermocouple to measure the temperature of a substrate when disposed on the substrate support surface; and a conductive element having an interior volume with the one or more conductive lines and the thermocouple disposed through the interior volume, the conductive element coupled to the RF electrode and having an electric field of about zero in the interior volume when RF current is flowed through the conductive element.
    • 本文提供了用于处理基板的装置。 在一些实施例中,衬底支撑件包括衬底支撑表面和轴; 设置在所述衬底支撑件中的RF电极,靠近所述衬底支撑表面以从RF源接收RF电流; 设置在所述基板支撑表面附近的加热器,以在设置在所述基板支撑表面上时向所述基板提供热量,所述加热器具有一个或多个导线以向所述加热器提供电力; 当设置在基板支撑表面上时测量基板的温度的热电偶; 以及具有内部体积的导电元件,所述一个或多个导电线和所述热电偶设置穿过所述内部体积,所述导电元件耦合到所述RF电极,并且当RF电流流过所述内部体积时具有约零的电场 导电元件。
    • 6. 发明授权
    • Chemical precursor ampoule for vapor deposition processes
    • 用于气相沉积工艺的化学前体安瓿瓶
    • US08146896B2
    • 2012-04-03
    • US12263022
    • 2008-10-31
    • Olkan CuvalciDien-Yeh WuXiaoxiong Yuan
    • Olkan CuvalciDien-Yeh WuXiaoxiong Yuan
    • B01F3/04
    • C23C16/4482
    • An apparatus for generating a gaseous chemical precursor is provided and contains a canister having a sidewall, a top, and a bottom encompassing an interior volume therein, an inlet port and an outlet port in fluid communication with the interior volume, and an inlet tube extending into the canister and having an inlet end and an outlet end, wherein the inlet end is coupled to the inlet port. The apparatus further contains a gas dispersion plate coupled to the outlet end of the inlet tube, wherein the gas dispersion plate is at an angle within a range from about 3° to about 80°, relative to a horizontal plane which is perpendicular to a vertical axis of the canister.
    • 提供了一种用于产生气态化学前体的设备,并且包括具有侧壁,顶部和底部的罐的罐,其中包含内部容积,与内部空间流体连通的入口端口和出口端口, 进入罐并具有入口端和出口端,其中入口端连接到入口端口。 该装置还包括耦合到入口管的出口端的气体分散板,其中气体分散板相对于垂直于垂直方向的水平面处于约3°至约80°的范围内 罐的轴线。
    • 9. 发明申请
    • SUBSTRATE PROCESSING SYSTEM AND METHODS THEREOF
    • 基板处理系统及其方法
    • US20100304027A1
    • 2010-12-02
    • US12789194
    • 2010-05-27
    • Wei Ti LeeLai TaSrinivas GuggillaKevin MoraesOlkan CuvalciRegan YoungJohn Mazzocco
    • Wei Ti LeeLai TaSrinivas GuggillaKevin MoraesOlkan CuvalciRegan YoungJohn Mazzocco
    • C23C16/44C23C16/00
    • C23C14/568C23C14/564C23C16/4401C23C16/54
    • Embodiments of the invention provide methods for processing substrates within a substrate processing system. In one embodiment, the method provides depositing a material on a substrate within a vapor deposition chamber coupled to a buffer chamber contained within a mainframe while maintaining a pressure of about 1×10−6 Torr or lower within a transfer chamber contained within the mainframe. The method further includes transferring the substrate from the vapor deposition chamber to the buffer chamber by a substrate handling robot while flowing a gas into the buffer chamber, evacuating the vapor deposition chamber, and maintaining a greater internal pressure within the buffer chamber than in the vapor deposition chamber. In some embodiments, the method includes transferring the substrate from the transfer chamber to a PVD chamber coupled to the transfer chamber by another substrate handling robot and depositing another material on the substrate within the PVD chamber.
    • 本发明的实施例提供了在衬底处理系统内处理衬底的方法。 在一个实施例中,该方法提供了在包含在主机内的传送室内保持约1×10 -6 Torr或更低的压力的情况下,在耦合到主机内的缓冲室的气相沉积室内的衬底上沉积材料。 该方法还包括:在将气体流入缓冲室的同时,通过基板处理机器人将基板从气相沉积室转移到缓冲室,抽空蒸镀室,并在缓冲室内保持比在蒸气中更大的内部压力 沉积室。 在一些实施例中,该方法包括将衬底从传送室转移到通过另一衬底处理机器人耦合到传送室的PVD室,并将另一材料沉积在PVD室内的衬底上。