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1. 发明授权

US08434394B1 Apparatus for adapting a rocket-assisted projectile for launch from a smooth bore tube 有权
标题翻译：用于使火箭辅助的弹丸用于从光滑的钻孔管发射的装置
公开(公告)号：US08434394B1
公开(公告)日：2013-05-07
申请号：US12580412
申请日：2009-10-16
申请人： Gregory Malejko , Daniel Pascua , Peter Burke , Keith Fulton
发明人： Gregory Malejko , Daniel Pascua , Peter Burke , Keith Fulton
IPC分类号： F41F3/00 , F42B15/00
CPC分类号： F42B14/06 , F42B10/14 , F42B15/105 , F42B15/36
摘要： An apparatus for adapting a rocket-assisted artillery projectile of a first caliber for firing from a smooth bore tube of a second caliber may include an adapter for connecting to an aft end of the rocket-assisted artillery projectile. The adapter may include a main channel for receiving rocket exhaust, a plurality of sub-channels that lead from the main channel to an exterior of the adapter, and an ignition channel that leads from the main channel to an ignition delay disposed in the adapter. A tail boom may be fixed to an aft end of the adapter. The tail boom may include an opening in a fore end that communicates with the ignition delay in the adapter. Lifting surfaces, such as fins, may be attached to the tail boom.
摘要翻译：用于使来自第二口径的光滑钻孔管的第一口径的火箭辅助炮弹的适配装置可以包括用于连接到火箭辅助炮弹的后端的适配器。适配器可以包括用于接收火箭排气的主通道，从主通道引导到适配器的外部的多个子通道以及从主通道引导到设置在适配器中的点火延迟的点火通道。尾杆可以固定到适配器的后端。尾杆可以包括与适配器中的点火延迟相通的前端开口。提升表面，例如翅片，可附接到尾部吊杆。

2. 发明申请

US20070272058A1 Direct Smelting Plant and Process 有权
标题翻译：直接冶炼厂和工艺
公开(公告)号：US20070272058A1
公开(公告)日：2007-11-29
申请号：US10576852
申请日：2004-10-16
申请人： Andreas Orth , David Leigh , Peter Burke
发明人： Andreas Orth , David Leigh , Peter Burke
IPC分类号： C21B15/00 , C22B3/02
CPC分类号： F27B3/18 , C21B5/023 , C21B13/00 , C21B13/0013 , C21B13/143 , C21C5/567 , F27D13/00 , Y02P10/216
摘要： The present invention relates to a direct smelting plant and a direct smelting process for producing molten metal from a metalliferous feed material, such as ores, partly reduced ores, and metal-containing waste streams, the latter of which comprising the steps of (a) pretreating metalliferous feed material in a pretreatment unit and producing pretreated feed material having a temperature of at least 200° C., (b) storing pretreated metalliferous feed material having a temperature of at least 200° C. under pressure in a hot feed material storage means, (c) transferring pretreated metalliferous feed material having a temperature of at least 200° C. under pressure in a hot feed material transfer line to a solids delivery means of a direct smelting vessel, and (d) delivering pretreated metalliferous feed material into the direct smelting vessel and smelting metalliferous feed material to molten metal in the vessel.
摘要翻译：本发明涉及一种直接熔炼设备和用于从含金属的原料如矿石，部分还原的矿石和含金属的废物流中生产熔融金属的直接熔炼方法，后者包括以下步骤：（a）在预处理单元中预处理含金属进料，并生产温度至少为200℃的预处理进料;（b）在热进料材料储存器中储存温度至少为200℃的预处理含金属进料是指（c）在热进料输送管线中将压力为至少200℃的预处理的含金属进料传送到直接熔炼容器的固体输送装置，以及（d）将预处理的含金属进料输送到直接熔炼容器和冶炼含金属进料到容器中的熔融金属。

3. 发明申请

US20070243326A1 Synthesis of single-walled carbon nanotubes 有权
标题翻译：单壁碳纳米管的合成
公开(公告)号：US20070243326A1
公开(公告)日：2007-10-18
申请号：US11198902
申请日：2005-08-04
申请人： Peter Burke , Zhen Yu
发明人： Peter Burke , Zhen Yu
IPC分类号： C23C16/00 , D01F9/12
CPC分类号： D01F9/133 , B01J23/862 , B01J23/8993 , B01J37/0211 , B01J37/0215 , B01J37/024 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/02 , C01B2202/34 , C01B2202/36 , D01F9/127 , Y10S427/102
摘要： Systems and methods for synthesizing ultra long carbon nanotubes comprising one or more metal underlayer platforms that allow the nanotube to grow freely suspended from the substrate. A modified gas-flow injector is used to reduce the gas flow turbulence during nanotube growth. Nanotube electrodes are formed by growing arrays of aligned nanotubes between two metal underlayer platforms.
摘要翻译：用于合成超长碳纳米管的系统和方法，其包含一个或多个金属底层平台，其允许纳米管自由地悬浮在基底上。改进的气流注入器用于减少纳米管生长期间的气流湍流。纳米管电极通过在两个金属底层平台之间生长排列的纳米管阵列而形成。

4. 发明授权

US07179736B2 Method for fabricating planar semiconductor wafers 有权
标题翻译：制造平面半导体晶圆的方法
公开(公告)号：US07179736B2
公开(公告)日：2007-02-20
申请号：US10966074
申请日：2004-10-14
申请人： Byung-Sung Leo Kwak , Peter Burke , Sey-Shing Sun
发明人： Byung-Sung Leo Kwak , Peter Burke , Sey-Shing Sun
IPC分类号： H01L21/4763
CPC分类号： H01L21/76877 , C25D5/18 , C25D7/123 , H01L21/2885 , H01L21/7684
摘要： The present invention relates to a method of fabricating planar semiconductor wafers. The method comprises forming a dielectric layer on a semiconductor wafer surface, the semiconductor wafer surface having vias, trenches and planar regions. A barrier and seed metal layer is then formed on the dielectric layer. The wafer is next place in a plating bath that includes an accelerator, which tends to collect in the vias and trenches to accelerate the rate of plating in these areas relative to the planar regions of the wafer. After the gapfill point is reached, the plating is stopped by removing the plating bias on wafer. An equilibrium period is then introduced into the process, allowing higher concentrations of accelerator additives and other components of the bath)] above the via and trench regions to equilibrate in the plating bath. The bulk plating on the wafer is resumed after equilibration. Over-plating on the wafer in the areas of the vias and trenches is therefore avoided, resulting in a more planar metallization layer on the wafer, without the use of a leveler additive which adversely affects the gapfill capability.
摘要翻译：本发明涉及一种制造平面半导体晶片的方法。该方法包括在半导体晶片表面上形成电介质层，该半导体晶片表面具有通孔，沟槽和平面区域。然后在电介质层上形成阻挡层和种子金属层。晶片是包含加速器的镀液中的下一个位置，该加速器倾向于在通路和沟槽中收集，以加速相对于晶片的平面区域在这些区域中的电镀速率。达到间隙填充点后，通过去除晶片上的电镀偏压来停止电镀。然后在该过程中引入平衡时段，允许较高浓度的促进剂添加剂和浴中的其它组分）]在通孔和沟槽区域上方在电镀浴中平衡。平衡后恢复晶片上的块体电镀。因此避免了在通孔和沟槽区域上的晶片上的过电镀，导致晶片上更平面的金属化层，而不使用不利地影响间隙填充能力的矫直添加剂。

5. 发明申请

US20060281256A1 Self-aligned cell integration scheme 失效
标题翻译：自对准单元集成方案
公开(公告)号：US20060281256A1
公开(公告)日：2006-12-14
申请号：US11312849
申请日：2005-12-20
申请人： Richard Carter , Hemanshu Bhatt , Shiqun Gu , Peter Burke , James Elmer , Sey-Shing Sun , Byung-Sung Kwak , Verne Hornback
发明人： Richard Carter , Hemanshu Bhatt , Shiqun Gu , Peter Burke , James Elmer , Sey-Shing Sun , Byung-Sung Kwak , Verne Hornback
IPC分类号： H01L21/336
CPC分类号： H01L51/0018 , B82Y10/00 , H01L27/283 , H01L51/0048 , H01L51/0545 , Y10S977/742
摘要： A method of forming a self-aligned logic cell. A nanotube layer is formed over the bottom electrode. A clamp layer is formed over the nanotube layer. The clamp layer covers the nanotube layer, thereby protecting the nanotube layer. A dielectric layer is formed over the clamp layer. The dielectric layer is etched. The clamp layer provides an etch stop and protects the nanotube layer. The clamp layer is etched with an isotropic etchant that etches the clamp layer underneath the dielectric layer, creating an overlap of the dielectric layer, and causing a self-alignment between the clamp layer and the dielectric layer. A spacer layer is formed over the nanotube layer. The spacer layer is etched except for a ring portion around the edge of the dielectric layer. The nanotube layer is etched except for portions that are underlying at least one of the clamp layer, the dielectric layer, and the spacer layer, thereby causing a self-alignment between the clamp layer, the overlap to the dielectric layer, the spacer layer, and the nanotube layer.
摘要翻译：一种形成自对准逻辑单元的方法。在底部电极上形成纳米管层。在纳米管层上形成夹层。夹层覆盖纳米管层，从而保护纳米管层。在钳位层上形成电介质层。蚀刻介电层。钳位层提供蚀刻停止并保护纳米管层。用各向同性蚀刻剂蚀刻钳夹层，蚀刻介质层下方的夹层，产生电介质层的重叠，并引起钳位层和电介质层之间的自对准。在纳米管层上形成间隔层。除了围绕电介质层的边缘的环形部分之外，蚀刻间隔层。除了夹持层，电介质层和间隔层中的至少一个的部分以外，蚀刻纳米管层，从而导致夹紧层之间的自对准，与电介质层的重叠，间隔层，和纳米管层。

6. 发明申请

US20050025663A1 Filter assembly for a reprocessor 有权
标题翻译：用于再处理器的过滤组件
公开(公告)号：US20050025663A1
公开(公告)日：2005-02-03
申请号：US10633343
申请日：2003-08-01
申请人： Peter Burke , Karl Ludwig , Jude Kral , Francis Zelina
发明人： Peter Burke , Karl Ludwig , Jude Kral , Francis Zelina
IPC分类号： A61L2/02 , A61L2/16 , A61L2/18 , C02F1/44 , C02F1/50 , C02F1/68 , C02F1/72 , C02F9/00 , A61L2/00
CPC分类号： C02F1/444 , A61L2/022 , A61L2/16 , A61L2/18 , C02F1/001 , C02F1/32 , C02F1/44 , C02F1/50 , C02F1/688 , C02F1/722 , C02F9/00 , C02F2301/08
摘要： A reprocessor having a circulation system for circulating a microbial deactivation fluid through a chamber that forms a part of the circulation system. The reprocessor includes a water filtration system for filtering water used in the reprocessor. The water filtration system includes a fluid feed line connectable to a source of pressurized water. A first filter and second filter elements are disposed in the fluid feed line for filtering fluids flowing therethrough. The second filter element is downstream from the first filter element and has the capacity to filter particles smaller than the first filter element. The fluid feed line forms a fluid path for water entering the reprocessor, and defines a portion of a path for microbial deactivation fluid circulated through the circulation system.
摘要翻译：一种具有循环系统的再处理器，用于使微生物灭活流体循环通过形成循环系统的一部分的室。再处理器包括用于过滤重新处理器中使用的水的过滤系统。水过滤系统包括可连接到加压水源的流体供给管线。第一过滤器和第二过滤器元件设置在流体供给管线中，用于过滤流过其中的流体。第二过滤元件在第一过滤器元件的下游，并且具有过滤小于第一过滤元件的颗粒的能力。流体供给管路形成用于进入再处理器的水的流体路径，并且限定通过循环系统循环的微生物去活化流体的路径的一部分。

7. 发明申请

US20130046040A1 POLYETHYLENE POWDERS AND POROUS ARTICLES PRODUCED THEREFROM 审中-公开
标题翻译：聚乙烯粉末和多余的制品生产
公开(公告)号：US20130046040A1
公开(公告)日：2013-02-21
申请号：US13695760
申请日：2011-05-03
申请人： Ramesh Srinivasan , Julia Hufen , Bernhard Forschler , Bjorn Rinker , Jens Ehlers , Louie Wang , Rajesh Bhor , Peter Burke , Meinhard Gusik , Yu Shen
发明人： Ramesh Srinivasan , Julia Hufen , Bernhard Forschler , Bjorn Rinker , Jens Ehlers , Louie Wang , Rajesh Bhor , Peter Burke , Meinhard Gusik , Yu Shen
IPC分类号： C08F110/02 , C08K3/04 , C08L23/06 , C08F4/76
CPC分类号： B01D39/1661 , B01D2239/10 , B01D2239/1216 , B01D2239/1241 , B43K1/006 , C02F3/20 , C08F10/02 , C08F110/02 , C08J9/24 , C08J2323/06 , C08L2207/068 , C08L2314/02 , Y02W10/15 , Y10T428/2982 , C08F4/022 , C08F4/025 , C08F2500/01 , C08F2500/24 , C08F2500/18
摘要： A polyethylene powder has a molecular weight in the range of about 300,000 g/mol to about 2,000,000 g/mol as determined by ASTM-D 4020, an average particle size, D50, between about 300 and about 1500 μm, and a bulk density between about 0.25 and about 0.5 g/ml. On sintering, the polyethylene powder produces a porous article having a porosity of at least 45% and a pressure drop less than 5 mbar. The porous article is useful in, for example, wastewater aeration and capillary and filtration applications.
摘要翻译：聚乙烯粉末的分子量通过ASTM-D 4020测定为约300,000g / mol至约2,000,000g / mol，平均粒径D50为约300至约1500μm，约0.25和约0.5g / ml。在烧结时，聚乙烯粉末产生孔隙率至少为45％，压降小于5毫巴的多孔制品。多孔制品可用于例如废水曝气和毛细管和过滤应用。

8. 发明申请

US20110162667A1 TOBACCO SMOKE FILTER FOR SMOKING DEVICE WITH POROUS MASS OF ACTIVE PARTICULATE 有权
标题翻译：用于吸烟装置的烟草烟雾过滤器，具有多孔活性颗粒
公开(公告)号：US20110162667A1
公开(公告)日：2011-07-07
申请号：US12981909
申请日：2010-12-30
申请人： Peter Burke , Meinhard Gusik , Julia Hufen , Luis Jimenez , Raymond Robertson , Ramesh Srinivasan
发明人： Peter Burke , Meinhard Gusik , Julia Hufen , Luis Jimenez , Raymond Robertson , Ramesh Srinivasan
IPC分类号： A24D3/12 , A24D3/08 , C08J9/24 , D04H1/54
CPC分类号： A24D3/12 , A24D3/062 , A24D3/066 , A24D3/08 , A24D3/14 , A24D3/163 , D04H1/407
摘要： A tobacco smoking device comprises a porous mass of active particles adapted to enhance a tobacco smoke flowing over said active particles and binder particles. The active particles comprises about 1-99% weight of the porous mass, and the binder particles comprises about 1-99% weight of said porous mass. The active particles and said binder particles are bound together at randomly distributed points throughout the porous mass. The active particles have a greater particle size than the binder particles.
摘要翻译：吸烟装置包括适于增强在所述活性颗粒和粘合剂颗粒上流动的烟草烟雾的多孔质量的活性颗粒。活性颗粒包含约1-99重量％的多孔质量，粘合剂颗粒占所述多孔质量的约1-99重量％。活性颗粒和所述粘合剂颗粒在整个多孔质量块中以随机分布的点结合在一起。活性颗粒具有比粘合剂颗粒更大的颗粒尺寸。

9. 发明申请

US20070259518A1 Method and apparatus for diverting void diffusion in integrated circuit conductors 有权
标题翻译：用于在集成电路导体中转移空穴扩散的方法和装置
公开(公告)号：US20070259518A1
公开(公告)日：2007-11-08
申请号：US11323398
申请日：2005-12-29
申请人： Derryl Allman , Hemanshu Bhatt , Charles May , Peter Burke , Byung-Sung Kwak , Sey-Shing Sun , David Price , David Pritchard
发明人： Derryl Allman , Hemanshu Bhatt , Charles May , Peter Burke , Byung-Sung Kwak , Sey-Shing Sun , David Price , David Pritchard
IPC分类号： H01L29/06 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/7682 , H01L21/76808 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： A method of diverting void diffusion in an integrated circuit includes steps of forming an electrical conductor having a boundary in a first electrically conductive layer of an integrated circuit, forming a via inside the boundary of the electrical conductor in a dielectric layer between the first electrically conductive layer and a second electrically conductive layer of the integrated circuit, and forming a slot between the via and the boundary of the electrical conductor for diverting void diffusion in the electrical conductor away from the via.
摘要翻译：在集成电路中转移空穴扩散的方法包括以下步骤：在集成电路的第一导电层中形成具有边界的电导体，在电介质层的边界内在第一导电层和第二导电层，并且在电导体的通孔和边界之间形成槽，用于将电导体中的空隙扩散转移离开通孔。

10. 发明申请

US20070102812A1 Reduction of macro level stresses in copper/Low-K wafers by altering aluminum pad/passivation stack to reduce or eliminate IMC cracking in post wire bonded dies 有权
标题翻译：通过改变铝焊盘/钝化层来减少或消除后线焊接模具中的IMC裂纹来减少铜/低K晶片中的宏观水平应力
公开(公告)号：US20070102812A1
公开(公告)日：2007-05-10
申请号：US11269275
申请日：2005-11-08
申请人： Sey-Shing Sun , Jayanthi Pallinti , Dilip Vijay , Hemanshu Bhatt , Hong Ying , Chiyi Kao , Peter Burke
发明人： Sey-Shing Sun , Jayanthi Pallinti , Dilip Vijay , Hemanshu Bhatt , Hong Ying , Chiyi Kao , Peter Burke
IPC分类号： H01L23/48
CPC分类号： H01L24/05 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05124 , H01L2224/05147 , H01L2224/05624 , H01L2224/05644 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48453 , H01L2224/48463 , H01L2224/48507 , H01L2224/48624 , H01L2224/48644 , H01L2224/48699 , H01L2224/48724 , H01L2224/48744 , H01L2224/48824 , H01L2224/48844 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01044 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/04953 , H01L2924/14 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2924/00015
摘要： A pad structure and passivation scheme which reduces or eliminates IMC cracking in post wire bonded dies during Cu/Low-K BEOL processing. A thick 120 nm barrier layer can be provided between a 1.2 μm aluminum layer and copper. Another possibility is to effectively split up the barrier layer, where the aluminum layer is disposed between the two barrier layers. The barrier layers may be 60 nm while the aluminum layer which is disposed between the barrier layers may be 0.6 μm. Another possibility is provide an extra 0.6 μm aluminum layer on the top barrier layer. Still another possibility is to provide an extra barrier layer on the top-most aluminum layer, such that a top barrier layer of 60 nm is provided on a 0.6 μm aluminum layer, followed by another barrier layer of 60 nm, another aluminum layer of 0.6 μm and another barrier layer of 60 nm.
摘要翻译：一种衬垫结构和钝化方案，可在Cu / Low-K BEOL处理期间减少或消除后引线键合模具中的IMC裂纹。可以在1.2μm铝层和铜之间提供厚120nm的阻挡层。另一种可能性是有效地分离阻挡层，其中铝层设置在两个阻挡层之间。阻挡层可以是60nm，而设置在阻挡层之间的铝层可以是0.6μm。另一种可能性是在顶部阻挡层上提供额外的0.6μm的铝层。另一种可能性是在最顶层的铝层上提供额外的阻挡层，使得在0.6μm的铝层上提供60nm的顶部阻挡层，接着是60nm的另一阻挡层，另一个为0.6的铝层妈妈和60nm的另一阻挡层。

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