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1. 发明申请

US20060180790A1 Oxygen scavenging compositions and packaging comprising said compositions 失效
标题翻译：含氧清除组合物和包含所述组合物的包装
公开(公告)号：US20060180790A1
公开(公告)日：2006-08-17
申请号：US11354661
申请日：2006-02-15
申请人： Girish Deshpande , Venkat Govindarajan , John Rost , Alan Silverman
发明人： Girish Deshpande , Venkat Govindarajan , John Rost , Alan Silverman
IPC分类号： C01B3/00
CPC分类号： C06B23/00 , A23L3/3436 , B32B27/18 , B32B27/36 , C01B13/0237 , C01B13/0281 , C08J3/223 , C08J2367/02 , C08K5/098 , C08K5/20 , C08K2201/012 , Y02E60/324 , Y10T428/1355 , Y10T428/1379 , Y10T428/26 , Y10T428/31797 , C08L67/02
摘要： The instant invention concerns a composition comprising a base polymer, at least one compound of the formula E-(L-E)x wherein: E is and L is a linking group; and at least one transition metal in a positive oxidation state. The invention also concerns packages containing walls comprising such compositions, methods of forming such packages, and methods of packaging an oxygen-sensitive item within such a package
摘要翻译：本发明涉及一种组合物，其包含基础聚合物，至少一种式E-（L-E）x X的化合物，其中：E为L且为连接基团; 和至少一种正氧化态的过渡金属。本发明还涉及包含这种组合物的壁的包装，形成这种包装的方法，以及在这种包装内包装氧敏感物品的方法

2. 发明授权

US06368665B1 Apparatus and process for controlled atmosphere chemical vapor deposition 失效
标题翻译：用于控制气氛化学气相沉积的装置和方法
公开(公告)号：US06368665B1
公开(公告)日：2002-04-09
申请号：US09067975
申请日：1998-04-29
申请人： Andrew T. Hunt , Subramaniam Shanmugham , William D. Danielson , Henry A. Luten , Tzyy Jiuan Hwang , Girish Deshpande
发明人： Andrew T. Hunt , Subramaniam Shanmugham , William D. Danielson , Henry A. Luten , Tzyy Jiuan Hwang , Girish Deshpande
IPC分类号： C23C1600
CPC分类号： C23C16/45519 , B05D1/08 , C23C16/14 , C23C16/18 , C23C16/30 , C23C16/342 , C23C16/36 , C23C16/406 , C23C16/409 , C23C16/453 , C23C16/45561 , C23C16/45576 , C23C16/45595 , C23C16/50
摘要： An improved chemical vapor deposition apparatus and procedure is disclosed. The technique provides improved shielding of the reaction and deposition zones involved in providing CVD coatings, whereby coatings can be produced, at atmospheric pressure, of materials which are sensitive to components in the atmosphere on substrates which are sensitive to high temperatures and which are too large, or inconvenient, to process in vacuum or similar chambers. The improved technique can be used with various energy sources and is particularly compatible with Combustion Chemical Vapor Deposition (CCVD) techniques.
摘要翻译：公开了一种改进的化学气相沉积设备和方法。该技术提供了提供CVD涂层所涉及的反应和沉积区的改进的屏蔽，由此在大气压下可以在对高温敏感的基底上的大气中对组分敏感并且太大的材料或不方便，以在真空或类似的室中进行处理。改进的技术可以与各种能源一起使用，并且与燃烧化学气相沉积（CCVD）技术特别相容。

3. 发明授权

US07033637B1 Epitaxial thin films 有权
标题翻译：外延薄膜
公开(公告)号：US07033637B1
公开(公告)日：2006-04-25
申请号：US09889237
申请日：2000-01-12
申请人： Andrew Tye Hunt , Girish Deshpande , Wen-Yi Lin , Tzyy-Jiuan Jan
发明人： Andrew Tye Hunt , Girish Deshpande , Wen-Yi Lin , Tzyy-Jiuan Jan
IPC分类号： B05D5/12
CPC分类号： H01M8/124 , B01D53/228 , B01D67/0072 , B01D71/024 , B01D2256/12 , B01D2325/22 , B01D2325/26 , C23C16/453 , H01G4/1209 , H01G4/33 , H01M8/0687 , H01M8/1253 , Y02E60/525 , Y02P70/56 , Y10T29/49115 , Y10T29/5313 , Y10T29/53135 , Y10T29/532 , Y10T29/53204
摘要： Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.
摘要翻译：公开了用作高温超导体的缓冲层的外延薄膜，固体氧化物燃料电池（SOFC）中的电解质，电子装置中的气体分离膜或电介质材料。通过使用CCVD，CACVD或任何其它合适的沉积工艺，可以形成具有无孔，理想晶界和致密结构的外延膜。公开了几种不同类型的材料用作高温超导体中的缓冲层。此外，在SOFC中使用外延薄膜用于电解质和电极形成导致无孔和理想的增益边界/界面微结构的致密化。还公开了用于生产氧气和氢气的气体分离膜。这些半透膜由多孔陶瓷基板上的高质量，致密，气密，无针孔的微小尺度的混合导电氧化物层形成。本文还介绍了作为电容器中的介电材料的外延薄膜。根据电容值的物理结构和介电常数，使用电容器。本发明的外延薄膜形成具有极高介电常数的低损耗介电层。这种高介电常数允许形成可以通过在它们的电极之间施加直流偏压来调整其电容的电容器。

4. 发明授权

US06939576B2 Polymer coatings 有权
标题翻译：聚合物涂料
公开(公告)号：US06939576B2
公开(公告)日：2005-09-06
申请号：US10311785
申请日：2001-06-27
申请人： Girish Deshpande , Andrew Tye Hunt , Subramaniam Shanmugham , Eric J. Yurtkuran , Todd Polley , Miodrag Oljara , Tzyy-Jiuan Jan Hwang , Aimee Poda , George Neuman
发明人： Girish Deshpande , Andrew Tye Hunt , Subramaniam Shanmugham , Eric J. Yurtkuran , Todd Polley , Miodrag Oljara , Tzyy-Jiuan Jan Hwang , Aimee Poda , George Neuman
IPC分类号： B05D1/08 , B05D1/34 , B05D3/02 , B05D3/08 , C03C17/00 , C03C17/32 , C03C17/42 , C09D7/12 , C09D183/04 , C23C4/12 , C23C26/00 , B05D3/00
CPC分类号： C03C17/001 , B05D1/08 , B05D1/34 , B05D3/0254 , B05D3/08 , B05D2518/10 , C03C17/007 , C03C17/009 , C03C17/32 , C03C17/42 , C03C2217/425 , C03C2217/445 , C03C2217/475 , C08K3/22 , C08K3/346 , C09D7/61 , C09D183/04 , C23C4/12 , C23C4/123 , C23C26/00 , Y10T428/12583 , Y10T428/31522
摘要： Coatings, particularly thin films, of polymeric material are produced in accordance with the invention by applying a finely divided aerosol of polymer solution to a substrate and substantially simultaneously applying an energy source to the applied solution to apply the solution. In cases where the polymer is cross-linking, the energy source assists in cross-linking of the polymer. The preferred energy source is a flame that may optionally or desirably deposit material along with the polymer spray. One particular aspect of the invention is directed to production of polyimide films. In accordance with another aspect of the invention, the co-deposition process is used to provide thin polysiloxane coatings on glass and other substrates.
摘要翻译：根据本发明，通过将细分散的聚合物溶液气溶胶施加到基底上并基本上同时向所施加的溶液施加能量来施加溶液来制备聚合材料的涂层，特别是薄膜。在聚合物交联的情况下，能量源有助于聚合物的交联。优选的能源是可以任选地或期望地将材料与聚合物喷雾一起沉积的火焰。本发明的一个特定方面涉及聚酰亚胺膜的制备。根据本发明的另一方面，共沉积方法用于在玻璃和其它基底上提供薄的聚硅氧烷涂层。

5. 发明申请

US20050019594A1 Epitaxial thin films 审中-公开
标题翻译：外延薄膜
公开(公告)号：US20050019594A1
公开(公告)日：2005-01-27
申请号：US10862605
申请日：2004-06-07
申请人： Andrew Hunt , Girish Deshpande , Wen-Yi Lin , Tzyy-Jiuan Hwang
发明人： Andrew Hunt , Girish Deshpande , Wen-Yi Lin , Tzyy-Jiuan Hwang
IPC分类号： B32B9/00 , B32B15/04
CPC分类号： H01M8/124 , B01D53/228 , B01D67/0072 , B01D71/024 , B01D2256/12 , B01D2325/22 , B01D2325/26 , C23C16/453 , H01G4/1209 , H01G4/33 , H01M8/0687 , H01M8/1253 , Y02E60/525 , Y02P70/56 , Y10T29/49115 , Y10T29/5313 , Y10T29/53135 , Y10T29/532 , Y10T29/53204
摘要： Epitaxial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal grain boundary/interface microstructure, Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed of high-quality, dense, gas-tight, pinhole free sub-micron scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.
摘要翻译：公开了用作高温超导体的缓冲层的外延薄膜，固体氧化物燃料电池（SOFC）中的电解质，电子装置中的气体分离膜或电介质材料。通过使用CCVD，CACVD或任何其它合适的沉积工艺，可以形成具有无孔，理想晶界和致密结构的外延膜。公开了几种不同类型的材料用作高温超导体中的缓冲层。此外，在SOFC中使用外延薄膜用于电解质和电极形成导致无孔和理想的晶界/界面微结构的致密化，还公开了用于生产氧和氢的气体分离膜。这些半渗透膜由多孔陶瓷基板上的高质量，致密，气密，无针孔的亚微米级的混合导电氧化物层形成。本文还介绍了作为电容器中的介电材料的外延薄膜。根据电容值的物理结构和介电常数，使用电容器。本发明的外延薄膜形成具有极高介电常数的低损耗介电层。这种高介电常数允许形成可以通过在它们的电极之间施加直流偏压来调整其电容的电容器。

6. 发明授权

US07282238B2 Method of depositing materials 有权
标题翻译：材料沉积方法
公开(公告)号：US07282238B2
公开(公告)日：2007-10-16
申请号：US10111684
申请日：2001-06-27
申请人： Subramaniam Shanmugham , Andrew Tye Hunt , Girish Deshpande , Tzyy-Jiuan Jan Hwang , Erika Moore , Yongdong Jiang
发明人： Subramaniam Shanmugham , Andrew Tye Hunt , Girish Deshpande , Tzyy-Jiuan Jan Hwang , Erika Moore , Yongdong Jiang
IPC分类号： B05D3/08
CPC分类号： C03C17/001 , B05D1/08 , B05D1/34 , B05D3/0254 , B05D3/08 , B05D2518/10 , C03C17/007 , C03C17/009 , C03C17/32 , C03C17/42 , C03C2217/425 , C03C2217/445 , C03C2217/475 , C08K3/22 , C08K3/346 , C09D7/61 , C09D183/04 , C23C4/12 , C23C4/123 , C23C26/00 , Y10T428/12583 , Y10T428/31522
摘要： A coherent material is formed on a substrate (10) by providing a precursor suspension (14) in which particulates are suspended in a carrier fluid, and directing the precursor suspension (14) at the substrate (10) from a first source (12). Generally contemporaneously with application of the deposited precursor suspension (14) to the surface, hot gases, e.g. hot gases produced by a flame (16), are directed at the substrate (10) from a remote second source (18) to fuse the particulates into the coherent material.
摘要翻译：通过提供一种前体悬浮液（14），其中颗粒悬浮在载体流体中，并且将前体悬浮液（14）从第一源（12）引导到基底（10）处，在基底（10）上形成相干材料，。通常同时将沉积的前体悬浮液（14）施加到表面，热气体，例如，由火焰（16）产生的热气体从远程第二源（18）引导到衬底（10），以将微粒熔合成粘结材料。

7. 发明申请

US20070178227A1 Epitaxial thin films 审中-公开
标题翻译：外延薄膜
公开(公告)号：US20070178227A1
公开(公告)日：2007-08-02
申请号：US11452591
申请日：2006-06-15
申请人： Andrew Hunt , Girish Deshpande , Wen-Yi Lin , Tzyy-Jiuan Hwang
发明人： Andrew Hunt , Girish Deshpande , Wen-Yi Lin , Tzyy-Jiuan Hwang
IPC分类号： B05D5/12
CPC分类号： H01M8/124 , B01D53/228 , B01D67/0072 , B01D71/024 , B01D2256/12 , B01D2325/22 , B01D2325/26 , C23C16/453 , H01G4/1209 , H01G4/33 , H01M8/0687 , H01M8/1253 , Y02E60/525 , Y02P70/56 , Y10T29/49115 , Y10T29/5313 , Y10T29/53135 , Y10T29/532 , Y10T29/53204
摘要： Epitaxial thin films are formed on textured substrates. An electrode is formed on the exposed surface of the thin film; the textured substrate removed, and second electrode is formed on the thin film on the side opposite the first electrode. A capacitor is thereby formed.
摘要翻译：在纹理化基底上形成外延薄膜。在薄膜的暴露表面上形成电极; 去除纹理衬底，第二电极在与第一电极相对的一侧的薄膜上形成。由此形成电容器。

8. 发明授权

US07031136B2 Variable capacitors, composite materials 有权
标题翻译：可变电容器，复合材料
公开(公告)号：US07031136B2
公开(公告)日：2006-04-18
申请号：US10474741
申请日：2002-04-09
申请人： Andrew Tye Hunt , Miodrag Oljaca , Scott Flanagan , Girish Deshpande , Stein Lee , Peter W. Faguy
发明人： Andrew Tye Hunt , Miodrag Oljaca , Scott Flanagan , Girish Deshpande , Stein Lee , Peter W. Faguy
IPC分类号： H01G5/00
CPC分类号： H01G7/06
摘要： Tunable capacitors (10, 20, 30, 40) have a dielectric material (16, 26, 36, 42) between electrodes, which dielectric material comprises an insulating material (17, 27, 37, 42) and electrically conductive material, (18, 28, 38, 48) e.g., conductive nanoparticulates, dispersed therein. In certain cases, enhanced tune-ability is achieved when the dielectric material comprises elongated nanoparticulates (38). Further enhanced tune-ability may be achieved by aligning elongated particulates in an electrode-to-electrode direction. Nanoparticulates may be produced by heating passivated nanoparticulates. Passivated nanoparticulates may be covalently bound within a polymeric matrix. High bias potential device structures can be formed with preferential mobilities.
摘要翻译：可调电容器（10,20,30,40）在电极之间具有介电材料（16,26,36,42），该电介质材料包括绝缘材料（17,27,37,42）和导电材料（18 ，28,38,48），例如，分散在其中的导电纳米颗粒。在某些情况下，当介电材料包括细长的纳米颗粒（38）时，可实现增强的调谐能力。可以通过使电极对电极方向上的细长颗粒对准来实现进一步增强的调谐能力。纳米微粒可以通过加热钝化的纳米颗粒来生产。钝化的纳米颗粒可以共价结合在聚合物基质内。可以以优先的迁移率形成高偏置电位器件结构。

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