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1. 发明授权

US5718813A Enhanced reactive DC sputtering system 失效
公开(公告)号：US5718813A
公开(公告)日：1998-02-17
申请号：US42619
申请日：1993-04-02
申请人： Geoffrey N. Drummond , Richard A. Scholl
发明人： Geoffrey N. Drummond , Richard A. Scholl
IPC分类号： C23C16/50 , B01J19/08 , C23C14/34 , C23C14/38 , C23C16/509 , H01J37/34 , H01L21/31 , H05H1/00 , H05H1/24 , H05H1/46 , H05H1/48
CPC分类号： H01J37/34 , H01J2237/0044 , H01J2237/0206
摘要： An enhanced reactive plasma processing method and system useful for deposition of highly insulating films. A variety of alternative embodiments are allowed for varying applications. In one embodiment, a tapped inductor is switched to ground or some common level to achieve substantial voltage reversal of about 10% upon detection of an arc condition. This reversal of voltage is maintained long enough to either afford processing advantages or to allow restoration of uniform charge density within the plasma prior to restoration of the initial driving condition. A technique for preventing arc discharges involving periodically either interrupting the supply of power or reversing voltage is effected through a timer system in the power source.

2. 发明授权

US06633017B1 System for plasma ignition by fast voltage rise 失效
标题翻译：快速升压等离子体点火系统
公开(公告)号：US06633017B1
公开(公告)日：2003-10-14
申请号：US09529431
申请日：2000-04-12
申请人： Geoffrey N. Drummond , George McDonough , Richard A. Scholl , Tim Kerr , John G. Harpold
发明人： Geoffrey N. Drummond , George McDonough , Richard A. Scholl , Tim Kerr , John G. Harpold
IPC分类号： B23K1000
CPC分类号： H01J37/32009 , H05H1/46
摘要： An improved system of igniting a plasma using a rapid voltage rise and thus causing ions that may be pre-existing to create secondary electron emission or the like is provided. In one embodiment, the voltage rise can be timed to be comparable to the transit time of the electrons across the plasma. It can also be arranged to achieve a voltage rise in less than 1000 microseconds, to result in a transition time that is less than one hundred times the transit time, to maximize the emission of secondary electrons, or even to merely result in collision energies ranging from 5 to 500 electron volts. The transition time can be controlled through an ignition control that may be programmable, may involve charging output storage devices, or may involve delayed switching to supply the increased voltage to the plasma after the storage elements have been more fully charged.
摘要翻译：提供了使用快速电压升高点燃等离子体并因此引起可能预先存在以产生二次电子发射等的离子的改进的系统。在一个实施例中，电压上升可以被定时以与电子穿过等离子体的传播时间相当。它还可以被设置为在小于1000微秒内实现电压上升，从而导致小于传输时间的百倍的转换时间，以使二次电子的发射最大化，或者甚至仅导致碰撞能量范围从5到500电子伏特。可以通过可编程的点火控制来控制转换时间，可能涉及对输出存储设备进行充电，或者可能涉及延迟开关，以在存储元件充满电后向等离子体提供增加的电压。

3. 发明授权

US6001224A Enhanced reactive DC sputtering system 失效
标题翻译：增强反应型DC溅射系统
公开(公告)号：US6001224A
公开(公告)日：1999-12-14
申请号：US532559
申请日：1995-09-29
申请人： Geoffrey N. Drummond , Richard A. Scholl
发明人： Geoffrey N. Drummond , Richard A. Scholl
IPC分类号： C23C16/50 , B01J19/08 , C23C14/34 , C23C14/38 , C23C16/509 , H01J37/34 , H01L21/31 , H05H1/00 , H05H1/24 , H05H1/46 , H05H1/48
CPC分类号： H01J37/34 , H01J2237/0044 , H01J2237/0206
摘要： An enhanced reactive plasma processing method and system useful for deposition of highly insulating films. A variety of alternative embodiments are allowed for varying applications. In one embodiment, a tapped inductor (13 and 14) is switched to ground (9) or some common level to achieve substantial voltage reversal of about 10% upon detection of an arc condition. This reversal of voltage is maintained long enough to either afford processing advantages or to allow restoration of uniform charge density within the plasma (5) prior to restoration of the initial driving condition. A technique for preventing arc discharges involving periodically either interrupting the supply of power or reversing voltage is effected through a timer system (22) in the power source (1).
摘要翻译：一种用于沉积高绝缘膜的增强型反应等离子体处理方法和系统。允许各种替代实施例用于不同的应用。在一个实施例中，抽头电感器（13和14）被切换到接地（9）或一些共同的电平，以在检测到电弧状况时实现大约10％的实质电压反转。电压的这种反转保持足够长的时间以提供加工优点，或者允许在恢复初始驾驶条件之前在等离子体（5）内恢复均匀的电荷密度。用于防止电弧放电的技术通过电源（1）中的定时器系统（22）来实现，周期性地中断电力供应或反转电压。

4. 发明授权

US6024844A Enhanced reactive DC sputtering system 失效
标题翻译：增强反应型DC溅射系统
公开(公告)号：US6024844A
公开(公告)日：2000-02-15
申请号：US24247
申请日：1998-02-17
申请人： Geoffrey N. Drummond , Richard A. Scholl
发明人： Geoffrey N. Drummond , Richard A. Scholl
IPC分类号： C23C16/50 , B01J19/08 , C23C14/34 , C23C14/38 , C23C16/509 , H01J37/34 , H01L21/31 , H05H1/00 , H05H1/24 , H05H1/46 , H05H1/48
CPC分类号： H01J37/34 , H01J2237/0044 , H01J2237/0206
摘要： An enhanced reactive plasma processing method and system useful for deposition of highly insulating films. A variety of alternative embodiments are allowed for varying applications. In one embodiment, a tapped inductor is switched to ground or some common level to achieve substantial voltage reversal of about 10% upon detection of an arc condition. This reversal of voltage is maintained long enough to either afford processing advantages or to allow restoration of uniform charge density within the plasma prior to restoration of the initial driving condition. A technique for preventing arc discharges involving periodically either interrupting the supply of power or reversing voltage is effected through a timer system in the power source.
摘要翻译：一种用于沉积高绝缘膜的增强型反应等离子体处理方法和系统。允许各种替代实施例用于不同的应用。在一个实施例中，抽头电感器被切换到接地或一些共同的电平，以在检测到电弧状况时实现大约10％的实质电压反转。电压的这种反转保持足够长的时间以提供加工优点，或者允许在恢复初始驾驶条件之前在等离子体内恢复均匀的电荷密度。用于防止电弧放电的技术通过电源中的定时器系统来实现，周期性地中断电源供应或反转电压。

5. 发明授权

US06217717B1 Periodically clearing thin film plasma processing system 有权
标题翻译：定期清理薄膜等离子体处理系统
公开(公告)号：US06217717B1
公开(公告)日：2001-04-17
申请号：US09245131
申请日：1999-01-22
申请人： Geoffrey N. Drummond , Richard A. Scholl
发明人： Geoffrey N. Drummond , Richard A. Scholl
IPC分类号： C23C1434
CPC分类号： H01J37/34 , H01J37/3444
摘要： An enhanced DC plasma processing system which acts to immediately stop current from flowing through the plasma allows a variety of alternative embodiments for varying applications. In one embodiment, a tapped inductor is switched to ground to achieve substantial voltage reversal of about 10% upon detection of an arc condition through voltage and/or rate of voltage change techniques. This reversal of voltage is maintained long enough to allow restoration of uniform charge density within the plasma prior to restoration of the initial driving condition. A technique for preventing arc discharges involving periodically applying a reverse voltage is effected through a timer system in the power supply.
摘要翻译：用于立即停止电流流过等离子体的增强的DC等离子体处理系统允许用于不同应用的各种替代实施例。在一个实施例中，抽头电感器被切换到地，以通过电压和/或电压变化技术的速率检测到电弧条件时实现大约10％的实质电压反转。电压的这种反转保持足够长以允许在恢复初始驾驶状况之前在等离子体内恢复均匀的电荷密度。用于防止电弧放电的技术包括周期性地施加反向电压通过电源中的定时器系统来实现。

6. 发明授权

US5863392A Periodically clearing thin film plasma processing system 失效
公开(公告)号：US5863392A
公开(公告)日：1999-01-26
申请号：US435810
申请日：1995-05-05
申请人： Geoffrey N. Drummond , Richard A. Scholl
发明人： Geoffrey N. Drummond , Richard A. Scholl
IPC分类号： C23C16/50 , B01J19/08 , C23C14/34 , C23C14/38 , C23C16/509 , H01J37/34 , H01L21/31 , H05H1/00 , H05H1/24 , H05H1/46 , H05H1/48
CPC分类号： H01J37/34 , H01J2237/0044 , H01J2237/0206
摘要： An enhanced DC plasma processing system which acts to immediately stop current from flowing through the plasma allows a variety of alternative embodiments for varying applications. In one embodiment, a tapped inductor is switched to ground to achieve substantial voltage reversal of about 10% upon detection of an arc condition through voltage and/or rate of voltage change techniques. This reversal of voltage is maintained long enough to allow restoration of uniform charge density within the plasma prior to restoration of the initial driving condition. A technique for preventing arc discharges involving periodically applying a reverse voltage is effected through a timer system in the power supply.

7. 发明授权

US07211179B2 Dual anode AC supply for continuous deposition of a cathode material 失效
标题翻译：用于连续沉积阴极材料的双阳极AC电源
公开(公告)号：US07211179B2
公开(公告)日：2007-05-01
申请号：US11016249
申请日：2004-12-17
申请人： Eric Seymour , Richard A. Scholl
发明人： Eric Seymour , Richard A. Scholl
IPC分类号： C23C14/35
CPC分类号： C23C14/3478 , H01J37/34 , H01J37/3438 , H01J37/3444
摘要： There is provided by this invention an apparatus for sputter deposition of an insulating material in a continuous mode of operation that utilizes at least two sputtering anodes and a cathode connected to a center tapped conductor to maintain the target cathode at a negative potential with respect to the plasma wherein an ac power supply drives each anode alternately to an ion collecting state to attract ions in the half cycle that a sputtering anode is at a negative potential relative to the plasma, and an electron collecting state to attract electrons in the half cycle that a sputtering anode is at a small potential relative to the plasma or is near the plasma potential. In an alternate embodiment the center tapped conductor is replaced with a pair of series connected diodes having the cathode of a first diode connected to a first sputtering anode, a cathode of a second diode connected to a second sputtering anode and the junction of the anodes of the first and second diodes connected to the target cathode to maintain the target cathode at a negative potential with respect to said plasma wherein the ac power supply drives each sputtering anode alternately to an ion collecting state to attract ions in the half cycle that an anode is at a negative potential relative to the plasma, and an electron collecting state to attract electrons in the half cycle that an anode is at a potential relative to the plasma small compared to the power supply voltage and providing for plasma current flow during the period either sputtering anode is in an ion collecting state.
摘要翻译：本发明提供一种用于溅射沉积连续工作模式的绝缘材料的装置，其利用至少两个溅射阳极和连接到中心抽头导体的阴极将目标阴极保持在相对于阴极的负电位等离子体，其中交流电源将每个阳极交替驱动到离子收集状态，以在半周期中吸引离子，使得溅射阳极相对于等离子体处于负电位，以及电子收集状态以在半周期内吸引电子，溅射阳极相对于等离子体具有较小的电位或接近等离子体电位。在替代实施例中，中心抽头导体由一对串联连接的二极管代替，该二极管具有连接到第一溅射阳极的第一二极管的阴极，连接到第二溅射阳极的第二二极管的阴极和阳极的阳极连接到目标阴极的第一和第二二极管将目标阴极保持在相对于所述等离子体的负电位，其中交流电源将每个溅射阳极交替地驱动到离子收集状态，以在半周期内吸引离子，阳极是相对于等离子体处于负电位，以及电子收集状态以在半周期内吸引电子，相对于电源电压，阳极相对于等离子体为电位，并且在溅射期间提供等离子体电流流动阳极处于离子收集状态。

8. 发明授权

US06818103B1 Method and apparatus for substrate biasing in multiple electrode sputtering systems 失效
标题翻译：多电极溅射系统中衬底偏置的方法和装置
公开(公告)号：US06818103B1
公开(公告)日：2004-11-16
申请号：US10110496
申请日：2002-04-12
申请人： Richard A. Scholl , Abraham Belkind
发明人： Richard A. Scholl , Abraham Belkind
IPC分类号： C23C1434
CPC分类号： C23C14/345 , C23C14/0036 , C23C14/3464
摘要： A method and an apparatus are disclosed for causing ion bombardment of the substrate during sputter deposition of an insulating or conducting material on a substrate (3) when using dual cathode or dual anode sputtering approaches. A novel electrical circuit including a center-tapped transformer is disclosed to permit a controllable potential to be applied to the substrate relative to the plasma potential, without the necessity of an additional power supply. Also disclosed are approaches which permit the use of an auxiliary biasing supply (8), either dc or high frequency ac, and which can permit continuous discharging of the surface through alternate ion and electron bombardment.
摘要翻译：公开了一种方法和装置，用于在使用双阴极或双阳极溅射方法时在衬底（3）上溅射沉积绝缘或导电材料期间引起衬底的离子轰击。公开了一种包括中心抽头变压器的新型电路，以允许相对于等离子体电势将可控电位施加到衬底，而不需要额外的电源。还公开了允许使用直流或高频ac的辅助偏置电源（8）并且可以允许通过交替的离子和电子轰击来连续地释放表面的方法。

9. 发明授权

US06368477B1 Adjustable energy quantum thin film plasma processing system 失效
标题翻译：可调能量子薄膜等离子体处理系统
公开(公告)号：US06368477B1
公开(公告)日：2002-04-09
申请号：US09438254
申请日：1999-11-10
申请人： Richard A. Scholl
发明人： Richard A. Scholl
IPC分类号： C23C1434
CPC分类号： H01J37/32064 , C23C14/3407 , C23C14/54 , H01J37/32935 , H01J37/3299
摘要： A thin film plasma processing system which includes multiple power environments and circuitry is described so as to encompass a variety of configurations. The environments may establish an energy quantum which may be interactively adjusted such as for conditioning or processing when new targets or materials are inserted. The energy quantum can be increased from the traditionally low energy storage of a switch-mode power supply to a higher energy to allow more intense arc occurrences and, thus, the more rapid conditioning of a target. Switching between environments can be achieved manually or automatically through timing or through arc or plasma electrical characteristics sensing. Energy quantum may be adjusted through the inclusion of energy storage elements, hardwired elements, or through software configurations such as are possible with the utilization of a programmable processor. Applications for DC switch-mode thin film processing systems are specifically shown.
摘要翻译：描述了包括多个电源环境和电路的薄膜等离子体处理系统，以便包含各种配置。环境可以建立可以交互式调整的能量量，例如当插入新的目标或材料时进行调节或处理。能量量可以从开关模式电源的传统低能量存储增加到更高的能量，以允许更强烈的电弧发生，并且因此更加快速地调节目标。环境之间的切换可以通过定时或电弧或等离子体电气特性检测手动或自动实现。能量量可以通过包括能量存储元件，硬连线元件或者通过软件配置来调整，例如可能利用可编程处理器。具体示出了用于DC开关型薄膜处理系统的应用。

10. 发明授权

US5917286A Pulsed direct current power supply configurations for generating plasmas 失效
标题翻译：用于产生等离子体的脉冲直流电源配置
公开(公告)号：US5917286A
公开(公告)日：1999-06-29
申请号：US646616
申请日：1996-05-08
申请人： Richard A. Scholl , David J. Christie
发明人： Richard A. Scholl , David J. Christie
IPC分类号： H01J37/32 , H05H1/46 , H01J7/24
CPC分类号： H01J37/32045 , H05H1/46
摘要： Various embodiments of a power supply are disclosed for generating plasmas. Current controlled power sources are disclosed that are capable of generating currents in low resistance, high temperature plasmas that are regulated to prevent the generation of excessive currents in the plasma. Current reversing switches are provided that control the flow of a direct current in a plasma chamber between various electrodes. A single current controlled power source capable of providing a substantially constant direct current can be utilized with various switch configurations to provide current that is delivered through three or more electrodes in a plasma chamber. Multiple power sources are also provided in association with shunt switches for delivering a plurality of sources of direct current in various directions between electrodes in a plasma chamber. In another embodiment of the present invention, inductive impedance can be provided in switch paths to cause a source of direct current to flow through a plasma chamber in various directions between electrodes. The use of multiple electrodes in association with a single voltage controlled power source is also disclosed.
摘要翻译：公开了用于产生等离子体的电源的各种实施例。公开了能够在低电阻，高温等离子体中产生电流的电流控制电源，其被调节以防止在等离子体中产生过大的电流。提供了电流反转开关，其控制各种电极之间的等离子体室中的直流电流。可以使用能够提供基本上恒定的直流电流的单个电流控制电源，具有各种开关配置，以提供通过等离子体室中的三个或更多个电极传送的电流。与分流开关相关联地提供多个电源，用于在等离子体室中的电极之间的各个方向上传送多个直流电源。在本发明的另一个实施例中，可以在开关路径中提供电感阻抗，以使直流电源在电极之间的各个方向上流过等离子体室。还公开了与单个电压控制电源相关联的多个电极的使用。

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