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    • 1. 发明授权
    • Flashover control structure for field emitter displays and method of making thereof
    • 场发射体显示器的闪络控制结构及其制作方法
    • US06255771B1
    • 2001-07-03
    • US08985222
    • 1997-12-04
    • Gary W. JonesSteven M. ZimmermanWebster E. HowardStewart Lloyd
    • Gary W. JonesSteven M. ZimmermanWebster E. HowardStewart Lloyd
    • H01J162
    • H01J3/022
    • A field emitter device including an insulator structure provided on an upper gate line layer of the device. The insulator structure may surround groups of emitters arranged on adjacent gate lines, groups of emitters arranged on the same gate lines, and/or entire regions of a larger array of field emitters. The insulator structure may reduce the occurrence of flashovers to and from the gate lines and emitters when the field emitter device is used in a display. The insulator structure may also enhance the focus of electrons emitted by the field emitter device on the display screen. Focus may be further enhanced by the addition of a resistive coating on the insulator structure. Methods of making the insulator structure and resistive coating are also disclosed.
    • 一种场致发射器件,包括设置在器件的上栅极线层上的绝缘体结构。 绝缘体结构可以围绕布置在相邻栅极线上的发射极组,布置在相同栅极线上的发射极组和/或更大阵列的场致发射体的整个区域。 当场致发射器件用于显示器时,绝缘体结构可以减少与栅极线和发射极之间的闪络的发生。 绝缘体结构还可以增强由场致发射器件在显示屏上发射的电子的焦点。 通过在绝缘体结构上添加电阻涂层可以进一步增强聚焦。 还公开了制造绝缘体结构和电阻涂层的方法。
    • 10. 发明授权
    • Planarizing process for field emitter displays and other electron source
applications
    • 场发射显示器和其他电子源应用的平面化处理
    • US5688158A
    • 1997-11-18
    • US519121
    • 1995-08-24
    • Gary W. JonesSteven M. ZimmermanSusan K. Schwartz JonesMichael J. CostaJeffrey A. Silvernail
    • Gary W. JonesSteven M. ZimmermanSusan K. Schwartz JonesMichael J. CostaJeffrey A. Silvernail
    • B81C1/00H01J9/02
    • B81C1/00611H01J9/025B81C2201/0126
    • A planarization method for use during manufacture of a microelectronic field emitter device, comprising applying a glass frit slurry including glass particles in a removable base, and subsequently baking to liquify the frit. The invention relates in another aspect to a method of making a microelectronic field emitter device, comprising the steps of: applying a patterned layer of liftoff profile resist over a substrate to define emitter conductor locations; employing the patterned resist layer to form trenches in the substrate at the emitter conductor locations; depositing emitter conductor metal in the trenches and over the patterned resist layer; removing the patterned resist layer; depositing a current limiter layer over the conductors and substrate areas between trenches; depositing a layer of emitter material; pattern masking and etching the layer of emitter material to form emitter structures; depositing gate dielectric; applying a patterned layer of liftoff profile resist over the gate dielectric; evaporating gate metal; and removing the patterned resist layer to define gate electrodes.
    • 一种在制造微电子场发射器件期间使用的平面化方法,包括将包括玻璃颗粒的玻璃料浆料涂覆在可移除的基底中,随后烘焙以熔化玻璃料。 本发明在另一方面涉及一种制造微电子场发射器件的方法,包括以下步骤:在衬底上施加图案化的剥离轮廓抗蚀剂层以限定发射体导体位置; 使用图案化的抗蚀剂层在发射极导体位置处在衬底中形成沟槽; 将发射极导体金属沉积在沟槽中和图案化抗蚀剂层上方; 去除图案化的抗蚀剂层; 在沟槽之间的导体和衬底区域上沉积限流器层; 沉积一层发射体材料; 图案掩蔽和蚀刻发射体材料层以形成发射体结构; 沉积栅电介质; 在栅极电介质上施加图案化的剥离轮廓抗蚀剂层; 蒸发栅极金属; 并去除图案化的抗蚀剂层以限定栅电极。