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    • 1. 发明授权
    • Flashover control structure for field emitter displays and method of making thereof
    • 场发射体显示器的闪络控制结构及其制作方法
    • US06255771B1
    • 2001-07-03
    • US08985222
    • 1997-12-04
    • Gary W. JonesSteven M. ZimmermanWebster E. HowardStewart Lloyd
    • Gary W. JonesSteven M. ZimmermanWebster E. HowardStewart Lloyd
    • H01J162
    • H01J3/022
    • A field emitter device including an insulator structure provided on an upper gate line layer of the device. The insulator structure may surround groups of emitters arranged on adjacent gate lines, groups of emitters arranged on the same gate lines, and/or entire regions of a larger array of field emitters. The insulator structure may reduce the occurrence of flashovers to and from the gate lines and emitters when the field emitter device is used in a display. The insulator structure may also enhance the focus of electrons emitted by the field emitter device on the display screen. Focus may be further enhanced by the addition of a resistive coating on the insulator structure. Methods of making the insulator structure and resistive coating are also disclosed.
    • 一种场致发射器件,包括设置在器件的上栅极线层上的绝缘体结构。 绝缘体结构可以围绕布置在相邻栅极线上的发射极组,布置在相同栅极线上的发射极组和/或更大阵列的场致发射体的整个区域。 当场致发射器件用于显示器时,绝缘体结构可以减少与栅极线和发射极之间的闪络的发生。 绝缘体结构还可以增强由场致发射器件在显示屏上发射的电子的焦点。 通过在绝缘体结构上添加电阻涂层可以进一步增强聚焦。 还公开了制造绝缘体结构和电阻涂层的方法。
    • 10. 发明授权
    • High performance field emitter and method of producing the same
    • 高性能场致发射体及其制造方法
    • US6144145A
    • 2000-11-07
    • US73340
    • 1998-05-06
    • Gary W. JonesSteven M. Zimmerman
    • Gary W. JonesSteven M. Zimmerman
    • H01J1/304H01J1/30
    • H01J1/3042H01J2201/30446H01J2201/319
    • A high performance novel electron emitter material for use in field emission devices is disclosed. The high performance electron emitter material of the invention may comprise a high Cr and SiO mixture. This material may be formed into high aspect ratio, low work function tips which maintain their shape, thus minimizing flash over risks and electron scattering problems, while at the same time permitting a high level of fabrication process flexibility, and minimizing film stresses. One or more impurities which are conductive oxides or will form conductive oxides may be added to the Cr--SiO composition so that a net low work function emitter may be maintained under oxidation. A class of semi-conductive and conductive metal oxides comprises another embodiment of the invention. These materials include oxides of Cr, Mo, Ni, Fe, and Sc, which have current emitting properties desirable for applications where improved electron emission infirmity is desired among emitters within a pixel. Emission from these more resistive emitter tip materials may be optionally enhanced with the addition of low work function impurities such as alkali metals enabling more stable devices while still permitting low turn-on voltages. Methods of making the emitter are also disclosed.
    • 公开了一种用于场致发射器件的高性能新型电子发射体材料。 本发明的高性能电子发射体材料可以包括高Cr和SiO混合物。 该材料可以形成为高纵横比,低功函数尖端,保持其形状,从而使风险和电子散射问题的闪现最小化,同时允许高水平的制造工艺灵活性,并最小化薄膜应力。 可以将一种或多种作为导电氧化物或将形成导电氧化物的杂质添加到Cr-SiO组合物中,使得可以在净氧化下保持净低功函数发射极。 一类半导体和导电金属氧化物包括本发明的另一个实施方案。 这些材料包括Cr,Mo,Ni,Fe和Sc的氧化物,其对于在像素内的发射体中期望改善的电子发射弱化的应用具有期望的电流发射特性。 可以通过添加低功函杂质例如碱金属来增加这些更电阻的发射极尖端材料的发射,从而使得能够实现更稳定的器件同时仍然允许低导通电压。 还公开了制造发射极的方法。